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FHX04LGT FUJITSU Limited ComS.I.T. 1,063 - -

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FHX04LG datasheet (4)

Part Manufacturer Description Type PDF
FHX04LG Eudyna Devices TRANS JFET 3.5V 4LG Original PDF
FHX04LG Fujitsu FET, P Channel, ID 0.06 A Original PDF
FHX04LG Others High Frequency Device Data Book (Japanese) Scan PDF
FHX04LG-E1 Fujitsu FET: P Channel: ID 0.06 A Original PDF

FHX04LG Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - Not Available

Abstract: No abstract text available
Text: FHX04LG , 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB (Typ.)@f=12GHz , Packaging Available DESCRIPTION The FHX04LG , FHX05LG, FHX06LG is a High Electron Mobility Transistor , Gate Source Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG , Unit mA mS V V dB dB dB dB dB dB °C/W FHX04LG , 05LG, 06LG Super Low Noise HEMT POWER , Ambient Temperature (°C) 4 Drain-Source Voltage (V) NF & Gas vs. FREQUENCY FHX04LG NF & Gas


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz
2004 - FHX04LG

Abstract: FHX04 FHX05LG FHX06LG low noise hemt 2-18G 12GAS
Text: FHX04LG , 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , Available DESCRIPTION The FHX04LG , FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT , Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise , dB dB dB dB dB °C/W FHX04LG , 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04LG FHX04 FHX05LG low noise hemt 2-18G 12GAS
2004 - FHX04

Abstract: FHX04LG FHX05LG FHX06LG Eudyna Packaging
Text: FHX04LG , 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , Available DESCRIPTION The FHX04LG , FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT , Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise , dB dB dB dB dB °C/W FHX04LG , 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04 FHX04LG FHX05LG Eudyna Packaging
fujitsu hemt

Abstract: FHX04 FHX04LG 4232 gm CQ 527
Text:  FHX04LG /LP, 05LG/LP, 06LG/LP FEATURES • Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04) â , Available DESCRIPTION The FHX04LG /LP, FHX05LG/LP, FHX06LG/LP is a High Electron Mobility Transistor(HEMT , FHX04LG /LP NF - 0.75 0.85 dB Associated Gain Gas vds = 2V, Ids = 10mA, f = 12GHz 9.5 10.5 - dB Noise , to 10000 315 (1,2) 10001 or over 500 (1,2) Edition 1.1 July 1999 -| FUJITSU FHX04LG /LP, 05LG/LP , €” -0.8V Ambient Temperature (°C) 1 2 3 Drain-Source Voltage (V) NF & Gas vs. FREQUENCY FHX04LG /LP


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PDF FHX04LG/LP, 05LG/LP, 06LG/LP 12GHz FHX04) FHX05LG/LP, FHX06LG/LP 2-18GHz fujitsu hemt FHX04 FHX04LG 4232 gm CQ 527
1998 - FHX04LG

Abstract: FHX04 FHX05LG FHX06LG TVRO 4232 gm fujitsu hemt FHX*LG
Text: FHX04LG , 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , Available DESCRIPTION The FHX04LG , FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT , Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise , dB dB dB dB °C/W FHX04LG , 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FCSI0598M200 FHX04LG FHX04 FHX05LG TVRO 4232 gm fujitsu hemt FHX*LG
1998 - fujitsu hemt

Abstract: No abstract text available
Text: FHX04LG /LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ , Available DESCRIPTION The FHX04LG /LP, FHX05LG/LP, FHX06LG/LP is a High Electron Mobility Transistor(HEMT , Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX04LG /LP Associated Gain Noise Figure FHX05LG , ) 3201 to 10000 315 (1,2) 10001 or over 500 (1,2) Edition 1.1 July 1999 1 FHX04LG /LP, 05LG/LP , ) NF & Gas vs. FREQUENCY FHX04LG /LP 4 VDS=2V IDS=10mA Noise Figure (dB) Gas 2 10 Noise Figure (dB) 3 15


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PDF FHX04LG/LP, 05LG/LP, 06LG/LP 12GHz FHX04) FHX05LG/LP, FHX06LG/LP 2-18GHz fujitsu hemt
Not Available

Abstract: No abstract text available
Text: FHX04LG 05LG, 06LG Low Noise H E M T ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item , Associated Gain Noise Figure Associated Gain Noise Figure Associated Gain FHX06LG FHX05LG FHX04LG Symbol , (V) NF & Gas vs. FREQUENCY FHX04LG NF & Gas vs. Id s 12 11 C Û m m 2, C Û 2, CD Ç , 30 Frequency (GHz) Drain Current (mA) NF & Gas vs. TEMPERATURE FHX04LG 15 E CD OUTPUT , =0.75dB NOISE PARAMETERS FHX04LG v d s =2V, i Ds = io m a Freq. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0


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PDF FHX04LG 4000Q.
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: FLR016FH FLR026FH none Case Style 'FH" FHC40LG FHX04LG FHX05LG FHX06LG FHX13LG FHX14LG FHX35LG , stripes and dots given below. Marking Format Part Number Color FHX13LG FHX04LG FHX35LG FHC40LG


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PDF
FSX52WF

Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
Text: LOW NOISE HEMTs Electrical Characteristics (Ta = 25°C) Part Number NF TYP. (dB) 0.30 0.45 0.60 0.75 0.9 1.1 1.2 1.2 Gas TYP. (dB) 15.5 12.5 12.5 10.5 10.5 10.5 10.0 8.5 f (GHz) 4 12 12 12 12 12 12 18 VDS (V) 2 2 2 2 2 2 3 2 ·os (mA) 10 10 10 10 10 10 10 10 Package Type LG/LP LG/LP LG/LP LG/LP Frequency Band C FHC40LG* FHX13LG* FHX14LG* FHX04LG * FHX05LG* FHX06LG* FHX35LG* FHR02FH * LP also available X/Ku LG/LP LG/LP LG/LP FH K LOW NOISE & GENERAL PURPOSE GaAs FETs


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PDF FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH FSX52WF GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: FHX04LG FHX05LG FHX06LG o c )f= 1 1.7-12.2 GHz NF =0.85 dB Ga= 32dB FHX14LG FHX05LG


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PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FLL101 FMC141401-02 fll171 FMC1414P1-02 FLL55 FLL120MK
MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: Fujitsu FHX04LG NE3210S01 Closest equivalent Super Low Noise Pseudomorphic HJ FET RoHS compliant


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PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
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