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2004 - Eudyna Packaging

Abstract: No abstract text available
Text: FHX13LG , FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , DESCRIPTION The FHX13LG , FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT) intended for general , 1 FHX13LG , FHX14LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW , 0 1 2 4 Drain-Source Voltage (V) 2 FHX13LG , FHX14LG Super Low Noise HEMT NF & , (°K) Input Power (dBm) 3 FHX13LG , FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz Eudyna Packaging
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: FLR016FH FLR026FH none Case Style 'FH" FHC40LG FHX04LG FHX05LG FHX06LG FHX13LG FHX14LG FHX35LG , stripes and dots given below. Marking Format Part Number Color FHX13LG FHX04LG FHX35LG FHC40LG PURPLE RED BROWN BLACK FHX14LG FHX05LG PURPLE RED FHX06LG RED FSX017LG FSU01LG BLACK


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FHX13LP

Abstract: FHX14LP transistor fhx 35 lp FHX13LG fujitsu hemt FHX13 Z150 FHX*LG low noise hemt transistor low noise hemt
Text:  FHX13LG /LP, 14LG/LP -Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB (Typ , and Reel Packaging Available DESCRIPTION The FHX13LG /LP, FHX|t|#_G/LP is a Super High Electron , Dissipation Pf 180 mW Storage Temperature FHX13LG Tstg -65 to +175 °C FHX13LP -65 to +150 °C Channel Temperature FHX14LG TCh 175 °C FHX14LP 150 °C *Note: Mounted on Al203 board (30 x 30 x 0.65mm) Fujitsu , Gate Source Breakdown Voltage VGSO IGS = -10(iA -3.0 - - V Noise Figure FHX13LG /LP NF - 0.45 0.50 dB


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PDF FHX13LG/LP, 14LG/LP 12GHz FHX13) 2-18GHz FCSI0598M200 FHX13LP FHX14LP transistor fhx 35 lp FHX13LG fujitsu hemt FHX13 Z150 FHX*LG low noise hemt transistor low noise hemt
MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: Fujitsu FHX04LG NE3210S01 Closest equivalent Super Low Noise Pseudomorphic HJ FET RoHS compliant , Fujitsu FHX05LG NE4210S01 Closest equivalent Super Low Noise Pseudomorphic HJ FET RoHS compliant , NE321000 Closest equivalent Super Low Noise Pseudomorphic HJ FET Fujitsu FHX13LG NE3210S01 Closest , Super Low Noise Pseudomorphic HJ FET Fujitsu FHX14LG NE4210S01 Closest equivalent Super Low Noise , @ 12 GHz Fujitsu FHX35LG NE4210S01 Closest equivalent Super Low Noise Pseudomorphic HJ FET RoHS


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PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
2004 - Not Available

Abstract: No abstract text available
Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B (Typ.)@f=12GHz • High , DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT NF , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10


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PDF FHX35LG 12GHz FHX35LG 2-18GHz the88
1998 - FHX35LP

Abstract: FHX35LG fujitsu hemt
Text: FHX35LG /LP Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=12GHz , Reliability Cost Effective Ceramic Microstrip (SMT) Package DESCRIPTION The FHX35LG /LP is a High Electron , Drain-Source Voltage Gate-Source Voltage Total Power Dissipation FHX35LG Storage Temperature Channel Temperature Rating 4.0 -3.0 290 -65 to +175 FHX35LP FHX35LG ¡C -65 to +150 ¡C 175 ¡C , FHX35LG /LP Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200


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PDF FHX35LG/LP 12GHz FHX35LG/LP 2-18GHz FCSI0598M200 FHX35LP FHX35LG fujitsu hemt
15A03

Abstract: No abstract text available
Text: FHX13LG , FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB (Typ.)@f=12GHz , Packaging Available DESCRIPTION TM The FHX13LG , FHX14LG is a Super High Electron Mobility , Condition 13.0 - dB - 300 400 °C/W FHX13LG , FHX14LG Super Low Noise HEMT Total , (V) 2 4 FHX13LG , FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gas vs. FREQUENCY FHX13LG FHX13LG , FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz 15A03
1998 - FHX13LP

Abstract: FHX14lp FHX13LG
Text: Available DESCRIPTION The FHX13LG /LP, FHX14LG /LP is a Super High Electron Mobility TM Transistor , Voltage Total Power Dissipation Storage Temperature Channel Temperature FHX13LG FHX13LP FHX14LG FHX14LP , FHX13LG /LP, 14LG/LP Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz , ) Symbol IDSS gm Vp VGSO NF Gas NF FHX14LG /LP Gas Rth Condition VDS = 2V, VGS =0V VDS = 2V, IDS =10mA , V dB dB dB dB ¡C/W FHX13LG /LP 1200 1201 3201 10001 less 3200 10000 over Edition 1.1 July


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PDF FHX13LG/LP, 14LG/LP 12GHz FHX13) FHX14LG/LP 2-18GHz FCSI0598M200 FHX13LP FHX14lp FHX13LG
2000 - low noise hemt

Abstract: transistor hemt FHX35LG transistor HEMT GaS rf transistor 3742
Text: FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain , °C/W 1200 1201 3201 10001 less 3200 10000 over Edition 1.1 July 1999 1 FHX35LG Super , FHX35LG Super Low Noise HEMT NF & Gas vs. FREQUENCY 20 VDS=3V IDS=10mA Noise Figure (dB) Noise Figure , Ambient Temperature (°K) Input Power (dBm) 3 FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE


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PDF FHX35LG 12GHz FHX35LG 2-18GHz low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742
2004 - FHX13LG

Abstract: FHX13 FHX14LG
Text: FHX13LG , FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION The FHX13LG , FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT , Condition 13.0 - dB - 300 400 °C/W FHX13LG , FHX14LG Super Low Noise HEMT Total , (V) 2 4 FHX13LG , FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gain (dB) NF & Gas vs. FREQUENCY FHX13LG FHX13LG , FHX14LG Super Low Noise HEMT TYPICAL NOISE


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FHX13LG FHX13
fujitsu hemt

Abstract: FHX35LG low noise hemt transistor LOW HEMT
Text: FHX35X/002 FHX35LG /002 FEATURES · · · · · High Transconductance Low Leakage Current Low Gate , optical receiver in high speed application. DESCRIPTION The FHX35X/002 Chip and FHX35LG /002 packaged , /002 FHX35LG /002 ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Drain-Source Voltage , itiA V q S=-2V V d S=3V FHX35X/002 FHX35LG /002 Min. 15 45 -0.2 Limits Min. 40 60 -1.0 10 0.27 , ts FHX35X/002 FHX35LG /002 Low Noise HEM T Fig. 1 Drain Current vs. Drain-Source Voltage


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PDF FHX35X/002 FHX35LG/002 FHX35LG/002 35LG/002 35X/0 HX35LGI002 fujitsu hemt FHX35LG low noise hemt transistor LOW HEMT
2004 - FHX35

Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
Text: FHX35X/002 FHX35LG /002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG /002 packaged , 20 nA Gate-Source Capacitance CGS FHX35X/002 - 0.27 - FHX35LG /002 - , =10mA VDS=3V, IDS=10mA 1 Unit pF pF FHX35X/002 FHX35LG /002 Low Noise HEMT Fig. 2 , -0.8V 0.5 FHX35LG /002 0.4 0.3 FHX35X/002 -1.0V 0 1 2 0.2 3 Drain-source , FHX35X/002 FHX35LG /002 Low Noise HEMT BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to


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PDF FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 Co4888 FHX35 eudyna FHX35LG hemt low noise die fujitsu gaas fet
2004 - Not Available

Abstract: No abstract text available
Text: Packaging Available DESCRIPTION The FHX04LG , FHX05LG , FHX06LG is a High Electron Mobility Transistor , Gate Source Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise Figure FHX06LG Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG , FHX04LG , 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB (Typ.)@f=12GHz , Unit mA mS V V dB dB dB dB dB dB °C/W FHX04LG , 05LG, 06LG Super Low Noise HEMT POWER


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz
1998 - FHX13LG

Abstract: fujitsu hemt FHX13 FHX14LG
Text: FHX13LG , FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION TM The FHX13LG , FHX14LG is a Super High Electron Mobility Transistor , Condition 13.0 - dB - 300 400 °C/W FHX13LG , FHX14LG Super Low Noise HEMT Total , (V) 2 4 FHX13LG , FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gas vs. FREQUENCY FHX13LG FHX13LG , FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FCSI0598M200 FHX13LG fujitsu hemt FHX13
1998 - FHX35LG

Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
Text: FHX35X/002 FHX35LG /002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG /002 packaged , FHX35LG /002 - 0.47 - - 0.035 - Item Symbol Conditions IDSS , VDS=3V IDS=10mA VDS=3V, IDS=10mA 1 Unit pF pF FHX35X/002 FHX35LG /002 Low Noise , 30 -0.4V 20 -0.6V 10 -0.8V 0.5 FHX35LG /002 0.4 0.3 FHX35X/002 -1.0V 0 1 2 , Gate-Source Voltage (V) 2 FHX35X/002 FHX35LG /002 Low Noise HEMT BONDING PROCEDURE FOR FET CHIPs


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PDF FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 FCSI0598M200 FHX35LG FHX35 fujitsu hemt fujitsu gaas fet hemt low noise die
1998 - FHX04LG

Abstract: FHX04 FHX05LG FHX06LG TVRO 4232 gm fujitsu hemt FHX*LG
Text: Available DESCRIPTION The FHX04LG , FHX05LG , FHX06LG is a High Electron Mobility Transistor(HEMT , Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise Figure FHX06LG Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG Symbol IDSS gm Vp , FHX04LG , 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , dB dB dB dB °C/W FHX04LG , 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FCSI0598M200 FHX04LG FHX04 FHX05LG TVRO 4232 gm fujitsu hemt FHX*LG
Not Available

Abstract: No abstract text available
Text: Associated Gain Noise Figure Associated Gain Noise Figure Associated Gain FHX06LG FHX05LG FHX04LG Symbol , FHX04LG 05LG, 06LG Low Noise H E M T ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item , (V) NF & Gas vs. FREQUENCY FHX04LG NF & Gas vs. Id s 12 11 C Û m m 2, C Û 2, CD Ç , 30 Frequency (GHz) Drain Current (mA) NF & Gas vs. TEMPERATURE FHX04LG 15 E CD OUTPUT , =0.75dB NOISE PARAMETERS FHX04LG v d s =2V, i Ds = io m a Freq. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0


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PDF FHX04LG 4000Q.
FHX13LG

Abstract: No abstract text available
Text: Source Breakdown Voltage Noise Figure Associated Gain Noise Figure Associated Gain FHX14LG FHX13LG Symbol , VOLTAGE FUJITSU 1997 Microwave Databook 60 Data Sheets FHX13LG , FHX14LG Low Noise HEMT NF & Gas vs. FREQUENCY FHX13LG NF & Gas vs. Id s FHX13LG 15 m T3, (D i_ ZJ o> L l C D CO C Q c , Databook F H X 13 L G FHXJ4LG Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE FHX13LG , + j2 5 0 , F H X 13 LG, FHX14LG Low Noise HEMT Item Drain-Source Voltage Gate-Source Voltage Total Power


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PDF FHX14LG FHX13LG
FSX52WF

Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
Text: LOW NOISE HEMTs Electrical Characteristics (Ta = 25°C) Part Number NF TYP. (dB) 0.30 0.45 0.60 0.75 0.9 1.1 1.2 1.2 Gas TYP. (dB) 15.5 12.5 12.5 10.5 10.5 10.5 10.0 8.5 f (GHz) 4 12 12 12 12 12 12 18 VDS (V) 2 2 2 2 2 2 3 2 ·os (mA) 10 10 10 10 10 10 10 10 Package Type LG/LP LG/LP LG/LP LG/LP Frequency Band C FHC40LG* FHX13LG * FHX14LG * FHX04LG * FHX05LG * FHX06LG * FHX35LG * FHR02FH * LP also available X/Ku LG/LP LG/LP LG/LP FH K LOW NOISE & GENERAL PURPOSE GaAs FETs


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PDF FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH FSX52WF GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
FHX35

Abstract: FHX35LG 12GHZ FHX06FA FHX15FA FHX16FA
Text: 11.50 VDS=2V, lDS=10mA, 12GHZ • FHX35LG ®É : SHF «¡Sftií m : mmmmuo ¡stMm. «ig


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PDF FHX06FA 12GHz 10raA. FHX15FA 10IIA 10raA MFGI100 FHX35 FHX35LG 12GHZ FHX06FA FHX16FA
FHX35LG

Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
Text: Effective Ceramic Microstrip (SMT) Package DESCRIPTION The FHX35LG /LP is a High Electron Mobility , performance. FHX35LG /LP Super Low Noise HEMT ABSOLUTE MAXIMUM RATING (Ambienl Temperature Ta , Dissipation Pt* 290 mW Storage Temperature FHX35LG Tstg -65 to+175 °C FHX35LP -65 to+150 °C Channel Temperature FHX35LG TCh 175 °C FHX35LP 150 °C *Note: Mounted on Al203 board (30 x 30 x 0.65mm) Fujitsu , 1999 Sample qty. 125 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) FUJITSU FHX35LG /LP ^^^^^^


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PDF 12GHz FHX35LG/LP 2-18GHz FHX35LG/LP FCSI0598M200 FHX35LG FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
1998 - fujitsu hemt

Abstract: No abstract text available
Text: Available DESCRIPTION The FHX04LG /LP, FHX05LG /LP, FHX06LG /LP is a High Electron Mobility Transistor(HEMT , Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX04LG /LP Associated Gain Noise Figure FHX05LG /LP Associated Gain Noise Figure FHX06LG /LP Associated Gain Thermal Resistance AVAILABLE CASE STYLES , FHX04LG /LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ , ) 3201 to 10000 315 (1,2) 10001 or over 500 (1,2) Edition 1.1 July 1999 1 FHX04LG /LP, 05LG/LP


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PDF FHX04LG/LP, 05LG/LP, 06LG/LP 12GHz FHX04) FHX05LG/LP, FHX06LG/LP 2-18GHz fujitsu hemt
FSX51

Abstract: fld3c2pj FMM362HE FLD5F6CX Fujitsu FLD5F6CX FRM5W231DR FLD148G3NL 382CG FLD150F5CN fld3f
Text: q s =3V lDS=20mA VGS=-2V VDS=3V lDS=20mA VDS=3V lD S = 1 0 m A FHX35LG /002 60 (VDS=2V) 60


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PDF 14-pin 4001EH 4002EH 4004EK 622Mb/s 4005EK FSX51 fld3c2pj FMM362HE FLD5F6CX Fujitsu FLD5F6CX FRM5W231DR FLD148G3NL 382CG FLD150F5CN fld3f
2004 - FHX04LG

Abstract: FHX04 FHX05LG FHX06LG low noise hemt 2-18G 12GAS
Text: Available DESCRIPTION The FHX04LG , FHX05LG , FHX06LG is a High Electron Mobility Transistor(HEMT , Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise Figure FHX06LG Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG Symbol IDSS gm Vp , FHX04LG , 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , dB dB dB dB dB °C/W FHX04LG , 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04LG FHX04 FHX05LG low noise hemt 2-18G 12GAS
2004 - FHX35LP

Abstract: FHX35LG WG 924 FHX35
Text: FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) 1 Unit mA mS V V FHX35LG , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10


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PDF FHX35LG 12GHz FHX35LG 2-18GHz reliabili4888 FHX35LP WG 924 FHX35
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