The Datasheet Archive

FHR02FH datasheet (3)

Part Manufacturer Description Type PDF
FHR02FH Fujitsu Original PDF
FHR02FH Fujitsu Super Low Noise HEMT Original PDF
FHR02FH Others High Frequency Device Data Book (Japanese) Scan PDF

FHR02FH Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - FHR02FH

Abstract: transistor hemt Low Noise HEMT
Text: FHR02FH Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=18GHz , Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor , Edition 1.1 July 1999 1 FHR02FH Super Low Noise HEMT POWER DERATING CURVE Total Power , 0 -0.6V -0.8V 3 1 2 Drain-Source Voltage (V) 2 4 FHR02FH Super Low Noise , ) NF & Gas vs. FREQUENCY FHR02FH Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100


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PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 transistor hemt Low Noise HEMT
1998 - FHR02FH

Abstract: fujitsu hemt
Text: FHR02FH Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=18GHz , Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor , Edition 1.1 July 1999 1 FHR02FH Super Low Noise HEMT POWER DERATING CURVE Total Power , 0 -0.6V -0.8V 3 1 2 Drain-Source Voltage (V) 2 4 FHR02FH Super Low Noise , ) NF & Gas vs. FREQUENCY FHR02FH Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100


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PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 fujitsu hemt
Not Available

Abstract: No abstract text available
Text: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B (Typ , etallization for High Reliability Herm etically Sealed Package DESCRIPTION The FHR02FH is a High Electron , CASE STYLE: FH FUJITSU FHR02FH Super Low Noise HEMT POWER DERATING CURVE DRAIN CURRENT vs , ) 1 I FHR02FH Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE + j5 0 f=18GHz VDS , 0.09 0.09 4 6 8 1012 1820 Frequency (GHz) Fujrrsu FHR02FH Super Low Noise HEMT


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PDF FHR02FH FHR02FH 4-22G FCSI0598M200
t z 1037 802

Abstract: S2V 97 FHR02FH
Text: FHR02FH L o w Moïse H E M 1 ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Note: Mounted on AI2 O 3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable , + ZJ to (/> 3 > cn -si 00 co o Associated Gain (dB) FHR02FH L o w N o i , 0.12 0.12 0.09 0.09 Frequency (GHz) Fujfrsu 1997 Microwave Databook 70 Data Sheets FHR02FH L o


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PDF FHR02FH 4000Q. t z 1037 802 S2V 97 FHR02FH
FSX52WF

Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
Text: LOW NOISE HEMTs Electrical Characteristics (Ta = 25°C) Part Number NF TYP. (dB) 0.30 0.45 0.60 0.75 0.9 1.1 1.2 1.2 Gas TYP. (dB) 15.5 12.5 12.5 10.5 10.5 10.5 10.0 8.5 f (GHz) 4 12 12 12 12 12 12 18 VDS (V) 2 2 2 2 2 2 3 2 ·os (mA) 10 10 10 10 10 10 10 10 Package Type LG/LP LG/LP LG/LP LG/LP Frequency Band C FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH * LP also available X/Ku LG/LP LG/LP LG/LP FH K LOW NOISE & GENERAL PURPOSE GaAs FETs


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PDF FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH FSX52WF GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: is performed as follows: Package Marking Format Part Number Marking of Part Number FHR02FH


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PDF
MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: Noise Pseudomorphic HJ FET, RoHS compliant Fujitsu FHR02FH NE3210S01 Closest equivalent Super Low


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PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
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