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    FF1200R17KE3_B2 Price and Stock

    Infineon Technologies AG FF1200R17KE3B2NOSA1

    IGBT MODULE 1700V 1200A
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    DigiKey FF1200R17KE3B2NOSA1 Tray
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    Power Integrations 2SB315A-FF1200R17KE3_B2

    IC GATE DRVR HALF-BRIDGE MODULE
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    Power Integrations 2SB315B-FF1200R17KE3_B2

    IC GATE DRVR HALF-BRIDGE MODULE
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    FF1200R17KE3_B2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FF1200R17KE3_B2 Infineon Technologies IGBT Modules up to 1600V / 1700V Dual; Package: A-IHM130-1; IC (max): 1,200.0 A; VCE(sat) (typ): 2.0 V; Configuration: Dual Modules; Technology: IGBT3; Housing: IHM 130 mm; Original PDF
    FF1200R17KE3B2NOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE 1700V 1200A Original PDF