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Part Manufacturer Description Datasheet Download Buy Part
TC255PA Texas Instruments TC255P 336- X 244-Pixel CCD Image Sensor
MSP430-3P-ELPRO-USB-FPA-FET-PGRT Texas Instruments USB-FPA-FET
ISL6146AFUZ-T7A Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146DFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146AFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146CFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C

FET 336 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MA-336-CP

Abstract: fet amplifier schematic schematic CIRCUIT DIAGRAM 3 phase analog power fa FET Input Amplifiers FET 336 MA-336 ma336cp fet differential amplifier schematic INTEGRATOR circuit low volt to amplifiers
Text: INSTRUMENTATION AMPLIFIERS Functional Diagram General Description MA- 336 is a dual iow-noise FET input , miMPILOCS SYSTEMS 005164 O V s - 336 Low-Noise, Qui-Fet Dual Operational Amplifier , % of standard FET input amplifiers. Lower bias current and offset voltage also results from the QUI-FET process making the MA- 336 an ideal replacement for the low noise 072 and 082 types. The output , Section: + IN -f—O +VS -IN O o OUT «-O -vs ORDER-PART NUMBER MA- 336 -CP EPOXY MOLDED 8


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PDF MA-336 293-4923g MA-336-CP fet amplifier schematic schematic CIRCUIT DIAGRAM 3 phase analog power fa FET Input Amplifiers FET 336 ma336cp fet differential amplifier schematic INTEGRATOR circuit low volt to amplifiers
1998 - Not Available

Abstract: No abstract text available
Text: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , FET that employs a push-pull design that offers ease of matching, greater consistency and a broader , Compression Point Edition 1.3 July 1999 1 FLL400IP-3 L-Band Medium & High Power GaAs FET OUTPUT , GaAs FET S-PARAMETERS VDS = 12V, IDS = 2.0A FREQUENCY (MHZ) 500 600 700 800 900 1000 1100 1200 1300 , 64.6 57.4 50.0 43.8 38.5 34.4 31.2 25.4 21.7 16.4 13.7 10.3 5.8 28.3 27.5 30.8 33.6 31.7 31.1 -8.6


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PDF FLL400IP-3 FLL400IP-3 FCSI0598M200
Not Available

Abstract: No abstract text available
Text: High Power GaAs FET Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 43% (Typ , at 12V DESCRIPTION The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that , - Fujfrsu FLL400IP-3 L-Band Medium & High Power GaAs FET OUTPUT POWER & rjadd vs. INPUT POWER , Power GaAs FET S-PARAMETERS V DS = 12V, lDS = 2.0A FREQUENCY (MHZ) 500 600 700 800 900 1000 , .014 .016 28.3 27.5 30.8 33.6 31.7 31.1 -8.6 26.2 23.3 21.4 20.7 15.2 9.4 5.2 -1.1


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PDF FLL400IP-3 FLL400IP-3 FCSI0598M200
2009 - ltc3755

Abstract: sw2800 50WLED LTC3524 LT1618 LTC3452 TM 1628 LED DRIVER LT3755 LTC3220-1 LTC3230
Text: + 336 36 FET 95 4x5 DFN-16 TSSOP-16 LT3755/-1 3000:1 PWM 5 x 1A + 4.540 75 FET 96 3x3 QFN-16 MSOP-16E LT3756 3000:1 PWM 5 x 1A + 6100 , 5x7 QFN-38 LTC3783 3000:1 PWM 10:1 10 x 1A 336 36 FET 93 4x5 DFN , 6 x 1A 336 36 FET 85 4x5 DFN-16 TSSOP-16 LT3755/-1 3000:1 PWM 10 , -38 LTC3783 SEPIC/ 3000:1 PWM 10:1 6 x 1A 336 FET FET 85 4x5 DFN-16 TSSOP


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2006 - GP 839 DIODE

Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RD01MUS2-101 RF Transistor s-parameter vhf t06 TRANSISTOR transistor M 839 RD01MU
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING , RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This , subject to change. RD01MUS2 MITSUBISHI ELECTRIC 1/6 17 Jan. 2006 MITSUBISHI RF POWER MOS FET , ELECTRIC 2/6 5 10 Vds(V) 15 20 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC , 3 4 Vgs(V) 5 6 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE


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PDF RD01MUS2 520MHz 520MHz RD01MUS2 GP 839 DIODE GP 809 DIODE GP 841 Diode MOS FET 1127 RD01MUS2-101 RF Transistor s-parameter vhf t06 TRANSISTOR transistor M 839 RD01MU
1999 - free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X PD72001 upper arm digital sphygmomanometer circuit diagram uPC1237 uPC 2002
Text: /MOS FET . 335 · Low Noise BIP. TR. (2SC, NE) . 336 · Twin TR. (µPA×××) . 338 · Low Noise GaAs/HJ FET (NE) . 339 · , regulations of the U.S.A. D2BGA, EEPROM, emlC-17K, FIP, FPBGA, IEBus, OCMOS FET , OPENCAD, SIMPLEHOST, VISTASL , Transceivers . 378 · Small Signal FET . 292 Plastic Fiber Link . 378 · Power MOS FET


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PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X PD72001 upper arm digital sphygmomanometer circuit diagram uPC1237 uPC 2002
1998 - FLL400IP-3

Abstract: No abstract text available
Text: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration , Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a , FET OUTPUT POWER & add vs. INPUT POWER VDS = 12V IDS = 2A f = 2.5GHz 47 46 45 44 43 42 41 , Case Temperature (°C) 2 200 41 43 FLL400IP-3 L-Band Medium & High Power GaAs FET , 28.3 27.5 30.8 33.6 31.7 31.1 -8.6 26.2 23.3 21.4 20.7 15.2 9.4 5.2 -1.1 -8.0 -13.8


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PDF FLL400IP-3 FLL400IP-3 FCSI0598M200
2004 - FLL400IP-3

Abstract: 1 928 498 167
Text: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration , Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a , FET OUTPUT POWER & add vs. INPUT POWER VDS = 12V IDS = 2A f = 2.5GHz 47 46 45 44 43 42 41 , Case Temperature (°C) 2 200 41 43 FLL400IP-3 L-Band Medium & High Power GaAs FET , 28.3 27.5 30.8 33.6 31.7 31.1 -8.6 26.2 23.3 21.4 20.7 15.2 9.4 5.2 -1.1 -8.0 -13.8


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PDF FLL400IP-3 FLL400IP-3 1 928 498 167
2004 - 1 928 498 056

Abstract: FLL400IP-3 s-band 50 Watt power amplifier 1 928 498 016 1 928 498 014
Text: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration , Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a , FET OUTPUT POWER & add vs. INPUT POWER VDS = 12V IDS = 2A f = 2.5GHz 47 46 45 44 43 42 41 , Case Temperature (°C) 2 200 41 43 FLL400IP-3 L-Band Medium & High Power GaAs FET , 28.3 27.5 30.8 33.6 31.7 31.1 -8.6 26.2 23.3 21.4 20.7 15.2 9.4 5.2 -1.1 -8.0 -13.8


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PDF FLL400IP-3 FLL400IP-3 1 928 498 056 s-band 50 Watt power amplifier 1 928 498 016 1 928 498 014
2011 - Not Available

Abstract: No abstract text available
Text: < Silicon RF Power MOS FET (Discrete) > RD01MUS2 RoHS Compliance, Silicon MOSFET Power , FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an , 1.8 1.4 65 UNIT MAX 50 1 2.3 - uA uA V W % < Silicon RF Power MOS FET (Discrete , 5 10 Vds(V) 15 20 0 5 10 Vds(V) 15 20 < Silicon RF Power MOS FET , MOS FET (Discrete) > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TEST


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PDF RD01MUS2 520MHz 520MHz RD01MUS2
2011 - RD01MUS2

Abstract: 627 DIODE
Text: < Silicon RF Power MOS FET (Discrete) > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF , conditions are subject to change. Publication Date : Oct2011 1 3.9+/-0.3 < Silicon RF Power MOS FET , (V) 15 20 Publication Date : Oct2011 2 < Silicon RF Power MOS FET (Discrete) > RD01MUS2 , 100 Po 80 d 60 < Silicon RF Power MOS FET (Discrete) > RD01MUS2 RoHS Compliance


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PDF RD01MUS2 520MHz RD01MUS2 520MHz Oct2011 627 DIODE
2009 - RD01MUS2

Abstract: RD01MUS2-101 MOS FET 1127 FAN 3792 GP 839 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems GP 809 DIODE
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING , +/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers , subject to change. RD01MUS2 MITSUBISHI ELECTRIC 1/7 7 Dec 2009 MITSUBISHI RF POWER MOS FET , ELECTRIC 2/7 5 10 Vds(V) 15 20 7 Dec 2009 MITSUBISHI RF POWER MOS FET ELECTROSTATIC , 3 4 Vgs(V) 5 6 7 Dec 2009 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE


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PDF RD01MUS2 520MHz RD01MUS2 520MHz RD01MUS2-101 MOS FET 1127 FAN 3792 GP 839 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems GP 809 DIODE
2009 - SC120SKTRT

Abstract: No abstract text available
Text: (VOUT = 3.3V) 3.4 FB grounded, L = 4.7H, VIN = 2V 3.36 3.36 TA = 85°C VOUT (V) VIN = , Mode (VOUT = 3.3V) FB grounded, L = 4.7H, IOUT = 75mA 3.36 3.36 TA = 85°C 3.32 TA = ­40°C , PWM Mode (VOUT = 3.3V) FB grounded, L = 4.7H, IOUT = 75mA VIN = 2.0V VIN = 3.0V 3.36 3.36 VOUT , programmable feedback controller, an internal 1.2MHz oscillator, an nchannel Field Effect Transistor ( FET ) between the LX and GND pins, and a p-channel FET between the LX and OUT pins. The current flowing through


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PDF SC120 SC120 SC120SKTRT
1995 - 2SK1388

Abstract: cc fuji Fuji Electric 1A Transistors smd 338 signal conditioning circuits for ldr PE-53680 MTD20N03HDL MBRB1545CT EC10QS02L EC10QS02
Text: . VCCP 6 VCC for synchronous FET output drivers. LODRV 7 Synchronous FET driver output. GNDP 8 Power ground for high current drivers. HIDRV 9 High side FET driver output. VCCQP 10 VCC for High side FET output driver ADJ1 11 VREF adjust pin.1 ADJ2 12 , Efficiency vs Output Current (FOSC = 400 KHz) 3.37 100 3.35 VOUT Efficiency (%) 3.36 90 , ) Efficiency vs Output Current (FOSC = 650 KHz) 3.37 3.36 90 3.35 80 3.34 VOUT Efficiency


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PDF RC5033 350uA RC5033 DS30005033 2SK1388 cc fuji Fuji Electric 1A Transistors smd 338 signal conditioning circuits for ldr PE-53680 MTD20N03HDL MBRB1545CT EC10QS02L EC10QS02
1995 - 2SK1388

Abstract: 1A Transistors smd 338 LRC251 MpP 335 2K capacitor MBRB1545CT EC10QS02L PE-53680 RC5033 EC10QS02 10SA220M
Text: synchronous FET output drivers. LODRV 7 Synchronous FET driver output. GNDP 8 Power ground for high current drivers. HIDRV 9 High side FET driver output. VCCQP 10 VCC for High side FET output driver ADJ1 11 VREF adjust pin.1 ADJ2 12 VREF adjust pin.1 GNDD , Efficiency vs Output Current (FOSC = 400 KHz) 3.37 100 3.35 VOUT Efficiency (%) 3.36 90 , ) Efficiency vs Output Current (FOSC = 650 KHz) 3.37 3.36 90 3.35 80 3.34 VOUT Efficiency


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PDF RC5033 350uA RC5033 DS30005033 2SK1388 1A Transistors smd 338 LRC251 MpP 335 2K capacitor MBRB1545CT EC10QS02L PE-53680 EC10QS02 10SA220M
1998 - 2SK1388

Abstract: 10SA220M EC10QS02 EC10QS02L MBRB1545CT MTD20N03HDL PE-53680 RC5033 ds2 12V dc
Text: synchronous FET output drivers. LODRV 7 Synchronous FET driver output. GNDP 8 Power ground for high current drivers. HIDRV 9 High side FET driver output. VCCQP 10 VCC for High side FET output driver ADJ1 11 VREF adjust pin.1 ADJ2 12 VREF adjust pin.1 GNDD , Efficiency vs Output Current (FOSC = 400 KHz) 3.37 100 3.35 VOUT Efficiency (%) 3.36 90 , ) Efficiency vs Output Current (FOSC = 650 KHz) 3.37 3.36 90 3.35 80 3.34 VOUT Efficiency


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PDF RC5033 350uA RC5033 DS30005033 2SK1388 10SA220M EC10QS02 EC10QS02L MBRB1545CT MTD20N03HDL PE-53680 ds2 12V dc
2005 - 3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL 3SK112 3SK78 2SC2509
Text: 2005 All Rights Reserved 2005 FET ICLSILSIASIC 2005 1 , 2SC2782A 36 220 20 80 12.5 175 18 175 MHz 2. MOS FET (TC = 25 , 3SK294 VHF (wide band) RF Amp Dual Gate FET SMQ 3SK199 3SK207 3SK232 3SK291 USQ 3SK256 3SK249 3SK293 USQ 3SK260 3SK259 UHF VHF and Wide Band VHF Dual Gate FET S-MINI USC , 0 re rbb' T 1.2 1.3 43 [5] 1.1.3 FET FET 2 FET () MOS


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL 3SK112 3SK78 2SC2509
2010 - JMK212BJ226MG-T

Abstract: marking 332 sot23-6 2SC120 SC120SKTRT JESD22-A114 SC120 diagram Converter 24v to 12v LQM31PN4r7M00 MARKING C20* SOT23-6 3.3V Transistor h3 0925
Text: 4.7H, TA = 25 C 50 100 200 FB grounded, L = 4.7H, VIN = 2V 3.4 3.36 3.36 3.32 , ) 3.4 FB grounded, L = 4.7H, IOUT = 5mA 3.4 3.36 FB grounded, L = 4.7H, IOUT = 75mA 3.36 , , IOUT = 75mA VIN = 2.0V VIN = 3.0V 3.36 VIN = 1.0V 3.32 VOUT (V) VOUT (V) 3.36 , . When the n-channel FET is turned off and the p-channel FET is turned on (known as the off-state), the , internal 1.2MHz oscillator, an nchannel Field Effect Transistor ( FET ) between the LX and GND pins, and a


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PDF SC120 190mA OT23-6 SC120 JMK212BJ226MG-T marking 332 sot23-6 2SC120 SC120SKTRT JESD22-A114 diagram Converter 24v to 12v LQM31PN4r7M00 MARKING C20* SOT23-6 3.3V Transistor h3 0925
2004 - a 1757 transistor

Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING , +/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD12MVS1 is a MOS FET type transistor , ELECTRIC 1/8 REV.4 20 Aug. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE , 2/8 5 10 Vds(V) 15 20 REV.4 20 Aug. 2004 MITSUBISHI RF POWER MOS FET , . 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758
2010 - PWM controller sot23-6

Abstract: GRM21BR60J226ME39B JESD22-A114 LQH43MN4R7K03L SC120 SC120SKTRT
Text: 200 0.1 0.2 0.5 1 2 5 FB grounded, L = 4.7H, TA = 25 C 3.4 3.36 50 100 200 FB grounded, L = 4.7H, VIN = 2V 3.36 3.32 VOUT (V) VOUT (V) 20 Load , 5mA 3.4 3.36 FB grounded, L = 4.7H, IOUT = 75mA 3.36 TA = ­40°C 3.32 3.28 VOUT , 3.0V 3.36 VIN = 1.0V 3.32 VIN = 3.0V 3.32 VOUT (V) VOUT (V) 3.36 3.28 3.28 , . When the n-channel FET is turned off and the p-channel FET is turned on (known as the off-state), the


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PDF SC120 190mA OT23-6 SC120 OT23-6 PWM controller sot23-6 GRM21BR60J226ME39B JESD22-A114 LQH43MN4R7K03L SC120SKTRT
2009 - GRM31CR71A226

Abstract: No abstract text available
Text: (VOUT = 3.3V) 3.4 FB grounded, L = 4.7H, VIN = 2V 3.36 3.36 TA = 85°C VOUT (V) VIN = , Mode (VOUT = 3.3V) FB grounded, L = 4.7H, IOUT = 75mA 3.36 3.36 TA = 85°C 3.32 TA = ­40°C , PWM Mode (VOUT = 3.3V) FB grounded, L = 4.7H, IOUT = 75mA VIN = 2.0V VIN = 3.0V 3.36 3.36 VOUT , programmable feedback controller, an internal 1.2MHz oscillator, an nchannel Field Effect Transistor ( FET ) between the LX and GND pins, and a p-channel FET between the LX and OUT pins. The current flowing through


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PDF SC120 SC120 OT23-6 GRM31CR71A226
2009 - Not Available

Abstract: No abstract text available
Text: 1 2 5 ο FB grounded, L = 4.7μH, TA = 25 C 3.4 3.36 50 100 200 FB grounded, L = 4.7μH, VIN = 2V 3.36 3.32 VOUT (V) VOUT (V) 20 Load Regulation (VOUT = , ¼H, IOUT = 5mA 3.4 3.36 FB grounded, L = 4.7μH, IOUT = 75mA 3.36 TA = –40°C 3.32 , 75mA VIN = 2.0V VIN = 3.0V 3.36 VIN = 1.0V 3.32 VOUT (V) VOUT (V) 3.36 3.28 , nchannel Field Effect Transistor ( FET ) between the LX and GND pins, and a p-channel FET between the LX and


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PDF SC120 190mA SC120
Not Available

Abstract: No abstract text available
Text: 73 53 31 GAIN ANG 180 161 142 CM CM ANG 115 92 26 -2 8 -7 2 MAG 3.32 3.34 3.36 3.40 , 3.68 3.67 3.65 3.63 3.57 3.46 3.36 3.31 3.13 MAG (dB) 10.4 10.5 10.5 0.1 0.5 1 1.5 , CONDITIONS DGFET 311.4 314.0 315.7 MMIC 34.6 35.0 35.2 UNIT 8 V ds ( FET ) = 6.18 V, I d ( fet ) = 5 mA, channel = 79.6° V ds ( FET ) = 5.08 V, I d ( fet ) = ^ mA, channel = 82.8° V ds ( FET )= 4.36 V, Id ( fet ) = 10 mA, channel = 83.8° °c/w RejC PARAMETER Re(RES) Therm al resistance of drain


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PDF TGA8349-SCC 14-GHz 11-dB 16-dBm
2006 - a 1757 transistor

Abstract: 78s12 GRM40 RD12MVS1 T112
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING , 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD12MVS1 is a MOS FET type , MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS , MITSUBISHI ELECTRIC 2/7 5 10 Vds(V) 15 20 10 Jan 2006 MITSUBISHI RF POWER MOS FET , ELECTRIC 3/7 2 4 Vgs(V) 6 8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112
2004 - FLM4450-45F

Abstract: ED-4701 ds 6930
Text: FLM4450-45F C-Band Internally Matched FET FEATURES High Output Power: P1dB=46.5dBm(Typ.) High , 50 Hermetically Sealed Package DESCRIPTION The FLM4450-45F is a power GaAs FET that is internally , FLM4450-45F C-Band Internally Matched FET OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER , 5.0 5.1 38 40 FLM4450-45F C-Band Internally Matched FET S-PARAMETER +90° +50j , 0.31 -63.60 0.39 -100.40 0.48 -128.30 S21 MAG 3.12 3.28 3.41 3.50 3.53 3.52 3.48 3.36


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PDF FLM4450-45F FLM4450-45F ED-4701 ds 6930
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