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Fairchild Semiconductor Corporation
FDR838P FDR838P ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics FDR838P 51,705 5 - $1.2375 $0.4641 $0.3465 $0.3218 More Info

FDR838P datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
FDR838P FDR838P ECAD Model Fairchild Semiconductor P-Channel 2.5 V Specified PowerTrench MOSFET Original PDF
FDR838P FDR838P ECAD Model Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
FDR838P FDR838P ECAD Model Toshiba Power MOSFETs Cross Reference Guide Original PDF
FDR838P FDR838P ECAD Model Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Scan PDF
FDR838P_NL FDR838P_NL ECAD Model Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF

FDR838P Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 838p

Abstract: FDR838P
Text: FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These , FDR838P 13'' 12mm 3000 units ©1999 Fairchild Semiconductor Corporation FDR838P , Rev. C FDR838P March 1999 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions , 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% FDR838P , Rev. C FDR838P Electrical Characteristics FDR838P Typical Characteristics 2.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50


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PDF FDR838P 838p FDR838P
1999 - CBVK741B019

Abstract: F63TNR F852 FDR838P
Text: FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These , FDR838P 13'' 12mm 3000 units ©1999 Fairchild Semiconductor Corporation FDR838P , Rev. C FDR838P March 1999 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions , 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% FDR838P , Rev. C FDR838P Electrical Characteristics FDR838P Typical Characteristics 2.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50


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PDF FDR838P CBVK741B019 F63TNR F852 FDR838P
Not Available

Abstract: No abstract text available
Text: 1 9 9 9 =M l C O N D U C T O R tm FDR838P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description Features These P-Channel 2 .5 V specified M O SFETs are produced using , € 12mm 3 0 0 0 units )1999 Fairchild Semiconductor Corporation FDR838R Rev. C FDR838P M a , FDR838P Electrical Characteristics FDR838P Typical Characteristics 0 0.6 1.2 1.8 , Temperature. FDR838R Rev. C 0 8 16 24 FDR838P Typical Characteristics (continued


OCR Scan
PDF FDR838P allert01
2002 - FDR4420A

Abstract: FDC637AN NDH8521C FDS8958A FDS8928A FDR6678A FDR6674A FDR6580 FDS8928 FDR8305N
Text: 0.8 FDR836P -20 Single use FDR838P NDH834P -20 Single use FDR838P FDR840P , 0.014 0.02 53 10 1.8 FDR838P -20 Single - 0.017 0.024 - 30 8


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PDF FDR8305N NDH831N FDR6580 FDR6674A FDR4420A FDR6678A FDC637AN NDH8321C FDR836P FDR838P FDR4420A FDC637AN NDH8521C FDS8958A FDS8928A FDR6678A FDR6674A FDR6580 FDS8928 FDR8305N
5l 0380

Abstract: sl 0380 r fs3t MARKING W1 AD CBVK741B019 F63TNR FDR835N FDR838P
Text: FAIRCHILD EMICQNDUCTOR TM March 1999 FDR838P P-Channel 2.5V Specified PowerTrench™ MOSFET , Width Quantity .838P FDR838P 13" 12mm 3000 units )1999 Fairchiid Semiconductor Corporation FDR838P , co 00 ■a FDR838P , Rev. C This Material Copyrighted By Its Respective Manufacturer Typical , . Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDR838P , Rev. C , circuit board design. FDR838P , Rev. C This Material Copyrighted By Its Respective Manufacturer


OCR Scan
PDF FDR838P 43iR-RÃ 5l 0380 sl 0380 r fs3t MARKING W1 AD CBVK741B019 F63TNR FDR835N FDR838P
2000 - irl3803 equivalent

Abstract: Diode BAY 61 Si4425DY equivalent HUF76143P3 HUF76139S3S fds6680a equivalent HUF76137S3S HUF76137P3 HUF76132SK8 HUF76132P3
Text: TSSOP8 E FDR838P ITF87056DQT2 PP 20 5 0.077 0.045 TSSOP8 E SI6965DQ


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PDF LC-00011 HUF76145P3 HUF76145S3S HUF76143P3 HUF76143S3S HUF76139P3 HUF76139S3S HUF76137P3 HUF76137S3S HUF76132P3 irl3803 equivalent Diode BAY 61 Si4425DY equivalent HUF76143P3 HUF76139S3S fds6680a equivalent HUF76137S3S HUF76137P3 HUF76132SK8 HUF76132P3
2003 - Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
Text: BSS123 BSS138 BSS84 FDR838P FDC634P FDS4072N3 FDS4080N3 FDZ5047N FDS7096N3 FDZ7064N FDZ7064S


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PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 IRF650 fqpf6n80 FQU17P06 FQA90N08 FQPF*5n50c FQP630 equivalent
Text: ­ 41 10 1.8 FDR836P -20 Single FDR838P -20 Single 30 8 1.8 , Replaced by FDR858P Replaced by NDH8304P Replaced by FDR838P ­ 0.017 0.024 ­ Replaced by FDR838P Discrete TSSOP-8 Part Number BVDSS Min. (V) RDS(ON) Max () @ VGS = 10V 4.5V


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PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 IRF650 fqpf6n80 FQU17P06 FQA90N08 FQPF*5n50c FQP630 equivalent
2003 - FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FDG329N FDP2532 IRFS630 FQP65N06 fqpf6n80
Text: FDR838P -20 Single NDH834P -20 Single NDH832P -20 Single FDR842P -12 Single SO-8 FLMP , 0.019 0.028 0.05 Use NDH8304P 0.07 0.011 0.011 Use FDR838P 0.017 Use FDR838P 0.06 0.009


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PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FDG329N FDP2532 IRFS630 FQP65N06 fqpf6n80
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
2002 - FDC6331

Abstract: fdp047an FDB045AN FQPF*13N06L FQA70N15 fdd5614p FQPF10N20 TO252-DPAK FDC6420 FDG6306P
Text: (Continued) Product FDR6674A FDR6678A FDR8305N FDR8308P FDR8321L FDR836P FDR838P FDR840P FDR842P FDR8508P


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PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF*13N06L FQA70N15 fdd5614p FQPF10N20 TO252-DPAK FDC6420 FDG6306P
1999 - ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
Text: FDR838P FDR8508P FDR8521L FDR856P FDR858P FDS3570 FDS3580 FDS4410 FDS4435 FDS4435A FDS4953


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PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
Text: -8 P-Channel FDR858P -30 Single FDR8508P -30 Dual FDR840P -20 Single FDR844P -20 Single FDR838P


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PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B sss3n90a SSS7N60B SSP4N60A IRFS630A ssr2955 IRF540 complementary
FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
Text: No file text available


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PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
2004 - thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 Diode 1N4001 50V 1.0A DO-41 Rectifier Diode BZX85C6V8 SPICE MODEL K*D1691 make SMPS inverter welding machine 1N5402 spice model transistor KSP44 tip122 tip127 mosfet audio amp
Text: 0.014 0.02 0.016 ­ Replaced by FDR838P 0.024 ­ 30 8 1.8 0.06 0.009 Replaced by FDR838P ­ 0.016 18 57 4.2 11 1.8 1.8 SuperSOT-8 Complementary N- and P-Channel FDR8702H , Single FDR836P -20 Single FDR838P -20 Single NDH834P NDH832P FDR842P -20 -20 -12


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PDF
thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Text: 1.8 FDR840P -20 Single ­ 0.011 0.016 ­ 41 10 1.8 FDR838P -20 Single ­ 0.017 0.024 ­ 30 8 1.8 FDR836P -20 Single Replaced by FDR838P , Replaced by FDR838P 2-13 Bold = New Products (introduced January 2003 or later) DISCRETE POWER


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PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
Text: FDR4420A FDR8308P FDR835N FDR836P FDR838P FDR8508P FDR856P FDR858P FDR9410A FDS4435 FDS4953


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
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