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ON Semiconductor
FDH50N50_F133 Trans MOSFET N-CH 500V 48A 3-Pin TO-247 Rail - Rail/Tube (Alt: FDH50N50-F133) FDH50N50_F133 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas (3) FDH50N50_F133 4,500 4 Weeks 450 - - - $2.64292 $2.67939 More Info
FDH50N50_F133 10 1 Weeks 1 - - - - - More Info
FDH50N50_F133 0 1 Weeks 118 - - - $2.63785 $2.59531 More Info
Avnet Europe FDH50N50_F133 0 4 Weeks, 2 Days 1 - - - - - More Info
ON Semiconductor
FDH50N50 TRANS MOSFET N-CH 500V 48A 3PIN TO-247 - Bulk (Alt: FDH50N50) FDH50N50 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas FDH50N50 785 1 Weeks 33 - - $10.57618 $9.95405 $9.48745 More Info
ON Semiconductor
FDH50N50-F133 UF 500V 105MOHM TO247 FDH50N50-F133 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 FDH50N50-F133 Bulk 4,500 450 $4.05 $4.05 $4.05 $3.59 $3.01 More Info
Rochester Electronics FDH50N50-F133 330 1 $2.8637 $2.8637 $2.7492 $2.6346 $2.6346 More Info
Fairchild Semiconductor Corporation
FDH50N50 48A, 500V, 0.105ohm, N-Channel Power MOSFET, TO-247AD FDH50N50 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics FDH50N50 785 1 $10.4685 $10.4685 $10.0498 $9.631 $9.631 More Info
Bristol Electronics FDH50N50 360 - - - - - More Info
Fairchild Semiconductor Corporation
FDH50N50-F133 Power Field-Effect Transistor, 48A, 500V, 0.105ohm, N-Channel, MOSFET, TO-247AB FDH50N50-F133 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics FDH50N50-F133 30,600 1 $2.8637 $2.8637 $2.7492 $2.6346 $2.6346 More Info
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Fairchild Semiconductor Corporation
FDH50N50_F133 48A, 500V, 0.105ohm, N-Channel Power MOSFET, TO-247AB FDH50N50_F133 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics FDH50N50_F133 10 1 $4.263 $4.263 $4.0925 $3.922 $3.922 More Info

FDH50N50 datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
FDH50N50 FDH50N50 ECAD Model Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
FDH50N50_F133 FDH50N50_F133 ECAD Model Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 48A TO-247 Original PDF
FDH50N50_F133 FDH50N50_F133 ECAD Model Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
FDH50N50-F133 FDH50N50-F133 ECAD Model ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 48A TO-247 Original PDF

FDH50N50 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - FDA50N50

Abstract: FDH50N50
Text: TM FDH50N50 / FDA50N50 500V N-Channel MOSFET Features Description · 48A, 500V, RDS(on) = , Maximum Ratings Symbol Parameter FDH50N50 /FDA50N50 500 VDSS Drain Current Drain Current , Characteristics Symbol Parameter RJC FDH50N50 / FDA50N50 Rev. A 1 0.2 °C/W - °C/W - , Min. 40 °C/W www.fairchildsemi.com FDH50N50 / FDA50N50 500V N-Channel MOSFET UniFET Device Marking Device Package Reel Size Tape Width Quantity FDH50N50 FDH50N50 TO


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PDF FDH50N50 FDA50N50 FDA50N50
2012 - Not Available

Abstract: No abstract text available
Text: FDH50N50_F133 Part Number Top Mark FDH50N50 Package TO-247 Packing Method Tube Reel Size N/A , TC = 25 C unless otherwise noted. Parameter FDH50N50_F133 / FDA50N50 Unit 500 V 48 , Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C FDH50N50_F133 , FDH50N50 / FDA50N50 N-Channel UniFETTM MOSFET 500 V, 48 A, 105 mΩ Features Description , , Junction-to-Ambient, Max. 40 ©2012 Fairchild Semiconductor Corporation FDH50N50 / FDA50N50 Rev. C1 1 °C


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PDF FDH50N50 FDA50N50
2012 - Not Available

Abstract: No abstract text available
Text: Device Marking Device FDH50N50 FDH50N50_F133 FDA50N50 FDA50N50 Electrical , FDH50N50_F133 / FDA50N50 N-Channel UniFETTM MOSFET 500 V, 50 A, 105 m Features Description , Continuous (TC = 25C) - Continuous (TC = 100C) IDM Drain Current FDH50N50_F133 /FDA50N50 - , 300 C Thermal Characteristics Symbol Parameter FDH50N50_F133 /FDA50N50 RJC , , Max. 40 ©2012 Fairchild Semiconductor Corporation FDH50N50_F133 / FDA50N50 Rev.C0 1 Unit


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PDF FDH50N50 FDA50N50
2007 - FQPF8N60C equivalent

Abstract: FQPF9N50C equivalent LCD inverter circuit FAN7530 equivalent 200w dc to ac inverter Circuit diagram FAN7601 FAN7601 equivalent FAN7529 equivalent FDD6685 equivalent FQPF10N60C equivalent
Text: 110 28.4 310 TO-3P FDH50N50 N 500 Single 0.105 105 48 625 TO , FDH50N50 N 500 Single 0.105 105 48 625 TO-247 FDA50N50 N 500 Single


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PDF
2008 - F133

Abstract: FDA50N50 FDH50N50
Text: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description · 48A , Absolute Maximum Ratings Symbol Parameter FDH50N50_F133 /FDA50N50 Unit 500 V 48 30.8 , for 5 Seconds Thermal Characteristics Symbol Parameter RJC FDH50N50_F133 / FDA50N50 Rev , FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET October 2008 Device Marking Device Package Reel Size Tape Width Quantity FDH50N50_F133 FDH50N50_F133 TO-247 - - 30 FDA50N50


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PDF FDH50N50 FDA50N50 FDA50N50 F133
2012 - TO-3PN

Abstract: No abstract text available
Text: FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET , ) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDH50N50_F133 /FDA50N50 , FDH50N50_F133 / FDA50N50 Rev.C0 FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDH50N50_F133 FDA50N50 Device FDH50N50_F133 FDA50N50 Package , Operating Temperature Typical Characteristics FDH50N50_F133 / FDA50N50 Rev.C0 2


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PDF FDH50N50 FDA50N50 FDA50N50 TO-3PN
2012 - fdh50n

Abstract: No abstract text available
Text: FDH50N50_F133 / FDA50N50 N-Channel UniFETTM MOSFET March 2013 FDH50N50_F133 / FDA50N50 , ) FDH50N50_F133 /FDA50N50 500 48 30.8 192 20 1868 48 62.5 20 625 5 -55 to +150 300 Unit V A A A V mJ A mJ V/ns , Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. FDH50N50_F133 /FDA50N50 , FDH50N50_F133 / FDA50N50 Rev.C0 FDH50N50_F133 / FDA50N50 N-Channel UniFETTM MOSFET Package Marking and Ordering Information Device Marking FDH50N50_F133 FDA50N50 Device FDH50N50_F133 FDA50N50 Package


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PDF FDH50N50 FDA50N50 FDA50N50 fdh50n
2008 - F133

Abstract: FDA50N50 FDH50N50 48A110
Text: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description · 48A , Absolute Maximum Ratings Symbol Parameter FDH50N50_F133 /FDA50N50 500 VDSS Drain Current , Seconds Thermal Characteristics Symbol Parameter RJC FDH50N50_F133 / FDA50N50 Rev. A 1 , Resistance, Junction-to-Case RCS Min. 40 °C/W www.fairchildsemi.com FDH50N50_F133 , Width Quantity FDH50N50_F133 FDA50N50 FDH50N50_F133 TO-247 - - 30 FDA50N50


Original
PDF FDH50N50 FDA50N50 FDA50N50 F133 48A110
2012 - Not Available

Abstract: No abstract text available
Text: TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description • 48A , Series G DS S Absolute Maximum Ratings Symbol Parameter FDH50N50_F133 /FDA50N50 500 , FDH50N50_F133 / FDA50N50 Rev.C0 1 0.2 °C/W - °C/W - Thermal Resistance , www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET February 2012 Device Marking Device FDH50N50_F133 FDH50N50_F133 TO-247 - - 30 FDA50N50 FDA50N50 TO-3PN - - 30


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PDF FDH50N50 FDA50N50
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