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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
FDC633N Fairchild Semiconductor Corporation Rochester Electronics 1,226,453 $0.98 $0.79
FDC633N Fairchild Semiconductor Corporation Bristol Electronics 2,050 $1.50 $0.39
FDC633N Fairchild Semiconductor Corporation Chip One Exchange 249,000 - -
FDC633N Fairchild Semiconductor Corporation Chip One Exchange 2,200 - -

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FDC633N datasheet (8)

Part Manufacturer Description Type PDF
FDC633N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
FDC633N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
FDC633N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
FDC633N Toshiba Power MOSFETs Cross Reference Guide Original PDF
FDC633N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
FDC633N_F095 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 5.2A 6-SSOT Original PDF
FDC633N_NF073 Fairchild Semiconductor 30V N-Channel Enhancement Mode Field Effect Transistor Original PDF
FDC633N_NL Fairchild Semiconductor 30V N-Channel Enhancement Mode Field Effect Transistor Original PDF

FDC633N Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - FDC633N marking convention

Abstract: No abstract text available
Text: Click on a product for detailed qualification data Product FDC633N FDC633N_NF073 back to top © 2007 , FDC633N_NF073 Full Production N/A SSOT-6 6 TAPE REEL Line 1: &E&Y (Binary Calendar Year Coding , March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description This , Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1a) FDC633N 30 ±8 5.2 16 1.6 0.8 -55 to , ) 78 30 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDC633N Rev.C ELECTRICAL


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PDF FDC633N NF073 FDC633N marking convention
Not Available

Abstract: No abstract text available
Text: F A I R C H I L D M arch 1998 S E M IC O N D U C T O R tm FDC633N , Absolute Maximum Ratings T a = 25 °C unless otherwise noted Symbol Parameter FDC633N V Ds s ^GSS , °C/W ©1 998 Fairchild Semiconductor Corporation FDC633N Rev.C ELECTRICAL CHARACTERISTICS , . 2. Pulse Test: Pulse Width < 300ps, Duty Cycle < 2.0%. FDC633N Rev.C Typical Electrical , Current and Temperature. FDC633N Rev.C Typical Electrical Characteristics (continued) 0 3


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PDF FDC633N FDC633N
scw 52 transistor

Abstract: No abstract text available
Text: F /\IR G H II_ D M IC O N D U C T O R tm March 1998 FDC633N N-Channel Enhancement Mode , Parameter Drain-Source Voltage FDC633N 30 Units Gate-Source Voltage - Continuous Drain Current - , c/w 0 1 9 9 8 F a irc h ild S e m ic o n d u c to r C o rp o ra tio n FDC633N Rev.C ELE C , 3 0 0 ^is Duty Cycle ¿ 2 0% FDC633N Rev C Typical Electrical Characteristics 0 05 VDS , Temperature. FDC633N Rev C Typical Electrical Characteristics (continued) . I D = 5.2A VDS =


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PDF FDC633N scw 52 transistor
1997 - FDC633N

Abstract: SOIC-16
Text: October 1997 PRELIMINARY FDC633N N-Channel Enhancement Mode Field Effect Transistor General , FDC633N Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage - Continuous , © 1997 Fairchild Semiconductor Corporation FDC633N Rev.B ELECTRICAL CHARACTERISTICS (TA = 25 , 2oz Cu in FR-4 board. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDC633N Rev.B , ) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC633N Rev.B


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PDF FDC633N OT-23 FDC633N SOIC-16
1998 - FDC633N

Abstract: SOIC-16
Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description , otherwise noted Symbol Parameter FDC633N VDSS VGSS Gate-Source Voltage - Continuous ID , (Note 1) 30 °C/W © 1998 Fairchild Semiconductor Corporation FDC633N Rev.C ELECTRICAL , of 2oz Cu on FR-4 board. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDC633N Rev.C , ) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC633N Rev.C


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PDF FDC633N OT-23 FDC633N SOIC-16
FDC633N

Abstract: SOIC-16
Text: FAIRCHILD IMICGNDUCTOR - March 1998 FDC633N N-Channel Enhancement Mode Field Effect , FDC633N Units V„ Drain-Source Voltage 30 V Gate-Source Voltage - Continuous ±8 Drain Current - , Corporation FDC633N Rev.C This Material Copyrighted By Its Respective Manufacturer ELECTRICAL , %. FDC633N Rev.C This Material Copyrighted By Its Respective Manufacturer Typical Electrical , and Temperature. FDC633N Rev.C This Material Copyrighted By Its Respective Manufacturer Typical


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PDF FDC633N OT-23 FDC633N SOIC-16
Q3 TRANSISTOR

Abstract: FDC633N 4TPE150MI X7R TDK MMBT3904 MAX1954 RLF7030-6R8M2R8 C0603C104M8RAC C0603C681M8RAC
Text: XENPAK APS power: 5V in 0.9V to 1.8V/0.2A to 1.8A out Schematic Vin 4.5V to 5.5V 0.22uF C1 C2 10uF IN D1 HSD BST Q1 FDC633N DH 0.1uF APS Power LX R1 680pF 0.9V-1.8V/ 0.2A-1.8A 6.8uH 130k Q2 COMP MAX1954 C6 DL To 5Vin 150uF C4 18mOhm FDC633N GND CL Load C5 L1 C3 R2 750 18pF PGND R3 APS Sense FB 1K R4 , TDK:RLF7030-6R8M2R8 1 Fairchild: FDC633N 2 R1 Inductor: 6.8 µH, 2.8A N Channel


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PDF FDC633N 680pF MAX1954 150uF 18mOhm MMBT3904 C0603C180M3GAC RLF7030-6R8M2R8 Q3 TRANSISTOR FDC633N 4TPE150MI X7R TDK MMBT3904 MAX1954 RLF7030-6R8M2R8 C0603C104M8RAC C0603C681M8RAC
1998 - FDC633N

Abstract: SOIC-16
Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description , otherwise noted Symbol Parameter FDC633N VDSS VGSS Gate-Source Voltage - Continuous ID , (Note 1) 30 °C/W © 1998 Fairchild Semiconductor Corporation FDC633N Rev.C ELECTRICAL , of 2oz Cu on FR-4 board. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDC633N Rev.C , ) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC633N Rev.C


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PDF FDC633N OT-23 FDC633N SOIC-16
Not Available

Abstract: No abstract text available
Text: FAIRCHILD M IC O N D U C T O R m June 1997 FDC633N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field , noted FDC633N Units V V A V c s s ^G SS Drain-Source Voltage Gate-Source Voltage-Continuous , , Junction4o-Case (Note i a) (N otei) 78 30 °CW ^C/W FDC633N Rev A ELECTRICAL C H A R A C T E R IS T , paper 2 Pulse T est P u ls e W id th < 3 0 0 ^is Duty C ycle < 2 0% FDC633N Rev A


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PDF FDC633N
2003 - Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
Text: FDC2612 FDC2612 FDC653N FDC655AN FDC3612 FDC604P FDC638P FDC640P FDC642P FDC633N FDC653N , NDC631N FDC633N FDC604P FDC638P FDC640P SI3447DV NDC651N NDC651N FDC654P NDC652P NDC652P FDC633N FDC653N FDC654P FDC658P SI3457DV FDC654P FDC5612 FDC5614P FDC633N FDC637AN FDC655AN


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PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
2001 - SSOT-6

Abstract: CBVK741B019 F63TNR FDC633N
Text: Barcode Label sample 193mm x 183mm x 80mm Pizza Box for Standard Option QTY: 3000 FSID: FDC633N , FDC633N 3000 D/C1: D9842AB QTY1: SPEC REV: D/C2: QTY2: CPN: FAIRCHILD SEMICONDUCTOR CORPORATION


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PDF 177cm 330cm SSOT-6 CBVK741B019 F63TNR FDC633N
2001 - FDC6331L

Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
Text: x 183mm x 80mm Pizza Box for Standard Option QTY: 3000 FSID: FDC633N SSOT-6 Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 SPEC: CBVK741B019 FDC633N 3000


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PDF FDC6331L FDC6331L SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
2010 - Not Available

Abstract: No abstract text available
Text: FDC633N 130kΩ 1% OUTPUT 12V CFF 220pF C2 33µF TPSD336M020R0200 2 1 R1 CFB 220pF , Q1 FDC633N R1 100kΩ 1% CFF 100pF C2 33µF 10TPA33M 2 1 R2 33.2kΩ 1 , ceramic MOSFET Fairchild FDC633N Fairchild FDC633N Vishay Si3446DV Qg 8nC at Vgs = 3V , www.irf.com Vishay Si2302DS Qg 310-322-3331 10µF, 6.3V Fairchild FDC633N WEB


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PDF MAX1524) MAX1522EUT-T MAX1522/MAX1523/MAX1524
2010 - MAX1523EUT-T

Abstract: MAX1522EUT MAX1522EUT-T MAX1523 MAX1523EUT MAX1524 MAX1524EUT-T CR43-3R3 351a SOT23
Text: MAX1523 SHDN FB GND 5 L1 33µH CDR74B-330 D1 MBR0530T3 Q1 R1 FDC633N 130k 1 , FDC633N R1 100k 1% CFF 100pF C2 33µF 10TPA33M 2 1 R2 33.2k 1% Figure 2 , ceramic MOSFET Fairchild FDC633N Fairchild FDC633N Vishay Si3446DV Qg 8nC at Vgs = 3V , , 6.3V Fairchild FDC633N WEB www.coilcraft.com www.fairchildsemi.com 100pF optional CIN


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PDF MAX1524) MAX1522EUT-T MAX1522/MAX1523/MAX1524 MAX1523EUT-T MAX1522EUT MAX1522EUT-T MAX1523 MAX1523EUT MAX1524 MAX1524EUT-T CR43-3R3 351a SOT23
2001 - MAX1522

Abstract: 12nc sot23-6 mark 2L SOT236 flyback operate in both ccm and dcm MAX1524EUT-T MAX1524 MAX1523EUT-T MAX1523 MAX1522EUT-T 890 sot236
Text: MAX1523 SHDN FB GND 5 L1 33µH CDR74B-330 D1 MBR0530T3 Q1 R1 FDC633N 130k 1 , FDC633N R1 100k 1% C2 33µF 10TPA33M CFF 100pF 2 1 R2 33.2k 1% Figure 2 , ceramic MOSFET Fairchild FDC633N Fairchild FDC633N Vishay Si3446DV Qg 8nC at Vgs = 3V , , 6.3V MOSFET Fairchild FDC633N Vishay Si2302DS Qg 8nC at Vgs = 3V 5nC at Vgs = 3.3V


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PDF MAX1522/MAX1523/MAX1524 MAX1522/MAX1523/MAX1524 MAX1522 12nc sot23-6 mark 2L SOT236 flyback operate in both ccm and dcm MAX1524EUT-T MAX1524 MAX1523EUT-T MAX1523 MAX1522EUT-T 890 sot236
2001 - A2635

Abstract: V2500
Text: FDC633N FSID: FDC633N LOT: CBVK741B019 QTY: 3000 SPEC: 3000 (F63T Carrier Tape Cover Tape


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PDF FDC606P A2635 V2500
2010 - MAX1522EUT

Abstract: Sanyo "date code" POSCAP Capacitor MAX1522EUT-T MAX1523 MAX1523EUT MAX1523EUT-T MAX1524 MAX1524EUT-T
Text: SHDN FB GND 5 L1 33H CDR74B-330 D1 MBR0530T3 Q1 R1 FDC633N 130k 1% OUTPUT 12V , ON OUTPUT 5V D1 CRS01 4 SET SHDN EXT MAX1524 FB GND 5 Q1 FDC633N , ceramic MOSFET Fairchild FDC633N Fairchild FDC633N Vishay Si3446DV Qg 8nC at Vgs = 3V , , 6.3V Fairchild FDC633N WEB www.coilcraft.com www.fairchildsemi.com 100pF optional CIN


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PDF MAX1524) MAX1522EUT-T MAX1522/MAX1523/MAX1524 MAX1522EUT Sanyo "date code" POSCAP Capacitor MAX1522EUT-T MAX1523 MAX1523EUT MAX1523EUT-T MAX1524 MAX1524EUT-T
2001 - mark 2L SOT236

Abstract: MAX1523EUT-T SOT23-6 QG MOS MAX1522 MAX1522EUT-T MAX1523 MAX1524 MAX1524EUT-T flyback operate in both ccm and dcm 10TPA33M
Text: MAX1523 SHDN FB GND 5 L1 33µH CDR74B-330 D1 MBR0530T3 Q1 R1 FDC633N 130k 1 , FDC633N R1 100k 1% C2 33µF 10TPA33M CFF 100pF 2 1 R2 33.2k 1% Figure 2 , ceramic MOSFET Fairchild FDC633N Fairchild FDC633N Vishay Si3446DV Qg 8nC at Vgs = 3V , , 6.3V MOSFET Fairchild FDC633N Vishay Si2302DS Qg 8nC at Vgs = 3V 5nC at Vgs = 3.3V


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PDF MAX1522/MAX1523/MAX1524 MAX1522/MAX1523/MAX1524 mark 2L SOT236 MAX1523EUT-T SOT23-6 QG MOS MAX1522 MAX1522EUT-T MAX1523 MAX1524 MAX1524EUT-T flyback operate in both ccm and dcm 10TPA33M
2001 - FDC2512

Abstract: SSOT-6 CBVK741B019 F63TNR FDC633N
Text: Pizza Box for Standard Option QTY: 3000 FSID: FDC633N SSOT-6 Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 SPEC: CBVK741B019 FDC633N 3000 D/C1: D9842AB QTY1


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PDF FDC2512 FDC2512 SSOT-6 CBVK741B019 F63TNR FDC633N
2001 - Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR CORPORATION CBVK741B019 FDC633N FSID: FDC633N LOT: CBVK741B019 QTY: 3000 SPEC: 3000


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PDF FDC6401N
2002 - Supersot6

Abstract: Supersot 6 NDC7002N FDC6303N FDC655AN complementary FDC645N fdc640p FDC633N FDC6305N
Text: FDC633N 30 Single - 0.042 0.054 - 11 5.2 1.6 FDC653N 30 Single


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PDF FDC6401N FDC6305N FDC637AN FDC6303N FDC6301N FDC6561AN FDC645N FDC638P FDC640P FDC642P Supersot6 Supersot 6 NDC7002N FDC6303N FDC655AN complementary FDC645N fdc640p FDC633N FDC6305N
2001 - SSOT-6

Abstract: Supersot 6 CBVK741B019 F63TNR FDC2612 FDC633N
Text: Pizza Box for Standard Option QTY: 3000 FSID: FDC633N SSOT-6 Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 SPEC: CBVK741B019 FDC633N 3000 D/C1: D9842AB QTY1


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PDF FDC2612 SSOT-6 Supersot 6 CBVK741B019 F63TNR FDC2612 FDC633N
2001 - SSOT-6

Abstract: CBVK741B019 F63TNR FDC633N FDC6401N
Text: x 183mm x 80mm Pizza Box for Standard Option QTY: 3000 FSID: FDC633N SSOT-6 Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 SPEC: CBVK741B019 FDC633N 3000


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PDF FDC6401N SSOT-6 CBVK741B019 F63TNR FDC633N FDC6401N
2001 - FDC634P

Abstract: SSOT-6 CBVK741B019 F63TNR FDC633N
Text: QTY: 3000 FSID: FDC633N SSOT-6 Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 SPEC: CBVK741B019 FDC633N 3000 D/C1: D9842AB QTY1: SPEC REV: D/C2: QTY2: CPN


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PDF FDC634P FDC634P SSOT-6 CBVK741B019 F63TNR FDC633N
2001 - SSOT-6

Abstract: CBVK741B019 F63TNR FDC633N FDC638P
Text: QTY: 3000 FSID: FDC633N SSOT-6 Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 SPEC: CBVK741B019 FDC633N 3000 D/C1: D9842AB QTY1: SPEC REV: D/C2: QTY2: CPN


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PDF FDC638P SSOT-6 CBVK741B019 F63TNR FDC633N FDC638P
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