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Rochester Electronics LLC
FDB3632 POWER FIELD-EFFECT TRANSISTOR, 1
FDB3632 ECAD Model
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FDB3632 MOSFET N-CH 100V 12A/80A D2PAK
FDB3632 ECAD Model
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FDB3632-F085 MOSFET N-CH 100V 12A TO263AB
FDB3632-F085 ECAD Model
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FDB3632_SB82115 MOSFET N-CH 100V 12A/80A D2PAK
FDB3632_SB82115 ECAD Model
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Fairchild Semiconductor Corporation
FDB3632
FDB3632 ECAD Model
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FDB3632. MOSFET, FULL REEL
FDB3632. ECAD Model
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FDB3632 datasheet (8)

Part ECAD Model Manufacturer Description Type PDF
FDB3632 FDB3632 ECAD Model Fairchild Semiconductor TRANS MOSFET N-CH 100V 12A 3TO-263AB T/R Original PDF
FDB3632 FDB3632 ECAD Model Fairchild Semiconductor N-Channel PowerTrench MOSFET Original PDF
FDB3632 FDB3632 ECAD Model Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 80A D2PAK Original PDF
FDB3632 FDB3632 ECAD Model Kexin N-Channel PowerTrench MOSFET Original PDF
FDB3632 FDB3632 ECAD Model TY Semiconductor TY Equivalent - N-Channel PowerTrench MOSFET - TO-263 Original PDF
FDB3632_F085 FDB3632_F085 ECAD Model Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 12A D2PAK Original PDF
FDB3632-F085 FDB3632-F085 ECAD Model ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 12A D2PAK Original PDF
FDB3632_NL FDB3632_NL ECAD Model Fairchild Semiconductor 100V N-Channel PowerTrench MOSFET Original PDF

FDB3632 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - FDB3632

Abstract: No abstract text available
Text: FDH3632 / FDP3632 / FDB3632 N-Channel PowerTrench® MOSFET 100 V, 80 A, 9 mΩ Features , noted FDH3632 / FDP3632 / FDB3632 Parameter Symbol Unit VDSS Drain to Source Voltage , Semiconductor Corporation FDH3632 / FDP3632 / FDB3632 Rev. C5 1 0.48 o C/W C/W www.fairchildsemi.com FDH3632 / FDP3632 / FDB3632 — N-Channel PowerTrench® MOSFET October 2013 Device Marking FDB3632 Device FDB3632 Package D2-PAK Reel Size 330 mm Tape Width 24 mm


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PDF FDH3632 FDP3632 FDB3632 O-247 O-220 FDB3632
2003 - FDB3632

Abstract: FDI3632 FDP3632 tc144e
Text: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9m Features Applications , Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 Rev. B1 FDB3632 / FDP3632 / FDI3632 April 2003 Device Marking FDB3632 Device FDB3632 Package TO-263AB Reel Size 330mm Tape Width 24mm , ©2003 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 Rev. B1 FDB3632 / FDP3632 , Corporation FDB3632 / FDP3632 / FDI3632 Rev. B1 FDB3632 / FDP3632 / FDI3632 Typical Characteristics


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PDF FDB3632 FDP3632 FDI3632 FDI3632 tc144e
2002 - FDP3632

Abstract: 82784 FDB3632 FDI3632
Text: FDB3632 / FDP3632 / FDI3632 N-Channel UltraFET® Trench MOSFET 100V, 80A, 9m Features , Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 Rev. A FDB3632 / FDP3632 / FDI3632 May 2002 Device Marking FDB3632 Device FDB3632 Package TO-263AB Reel Size 330mm Tape Width 24mm , ©2002 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 Rev. A FDB3632 / FDP3632 , Corporation FDB3632 / FDP3632 / FDI3632 Rev. A FDB3632 / FDP3632 / FDI3632 Typical Characteristics TA


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PDF FDB3632 FDP3632 FDI3632 82784 FDI3632
2008 - FDB3632

Abstract: No abstract text available
Text: FDB3632 / FDP3632 / FDI3632 / FDH3632 December 2008 FDB3632 / FDP3632 / FDI3632 / FDH3632 , . ©2008 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C3 FDB3632 / FDP3632 / FDI3632 / FDH3632 Package Marking and Ordering Information Device Marking FDB3632 FDP3632 FDI3632 FDH3632 Device FDB3632 FDP3632 FDI3632 FDH3632 Package TO-263AB TO-220AB TO-262AB TO-247 Reel Size , ©2008 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C3 FDB3632


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PDF FDB3632 FDP3632 FDI3632 FDH3632 O-220AB O-263AB
2002 - FDB3632

Abstract: No abstract text available
Text: FDB3632 / FDP3632 / FDI3632 October 2002 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench , Corporation FDB3632 / FDP3632 / FDI3632 Rev. B FDB3632 / FDP3632 / FDI3632 Package Marking and Ordering Information Device Marking FDB3632 FDP3632 FDI3632 Device FDB3632 FDP3632 FDI3632 Package TO , Width = 100s ©2002 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 Rev. B FDB3632 / FDP3632 / FDI3632 Typical Characteristics TA = 25°C unless otherwise noted 1.2 125 CURRENT


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PDF FDB3632 FDP3632 FDI3632
2002 - FDB3632

Abstract: FDP3632 FDI3632 tc144e
Text: FDB3632 / FDP3632 / FDI3632 N-Channel UltraFET® Trench MOSFET 100V, 80A, 9m Features , Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 Rev. A1 FDB3632 / FDP3632 / FDI3632 July 2002 Device Marking FDB3632 Device FDB3632 Package TO-263AB Reel Size 330mm Tape Width 24mm , ©2002 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 Rev. A1 FDB3632 / FDP3632 , Corporation FDB3632 / FDP3632 / FDI3632 Rev. A1 FDB3632 / FDP3632 / FDI3632 Typical Characteristics


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PDF FDB3632 FDP3632 FDI3632 FDI3632 tc144e
2004 - FDB3632

Abstract: FDH3632 FDI3632 FDP3632
Text: FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9m Features , systems certification. ©2004 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C1 FDB3632 / FDP3632 / FDI3632 / FDH3632 November 2004 Device Marking FDB3632 Device FDB3632 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units , . 2: Pulse Width = 100s ©2004 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632


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PDF FDB3632 FDP3632 FDI3632 FDH3632 O-220AB FDH3632
2004 - T 105 micro 25E3

Abstract: FDP3632 tc144e fdb3632 247A03 TC217
Text: FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench® MOSFET March 2013 FDB3632 , ) Power dissipation Derate above 25oC Operating and Storage Temperature o o Parameter FDB3632 , Corporation FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C4 1 www.fairchildsemi.com FDB3632 / FDP3632 , Marking FDB3632 FDP3632 FDI3632 FDH3632 Device FDB3632 FDP3632 FDI3632 FDH3632 Package TO-263AB TO , 75A, VDD = 80V. 2: Pulse Width = 100s ©2004 Fairchild Semiconductor Corporation FDB3632 / FDP3632


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PDF FDB3632 FDP3632 FDI3632 FDH3632 FDH3632 O-220AB O-263AB T 105 micro 25E3 tc144e 247A03 TC217
2008 - fdp3632

Abstract: FDB3632 tc144e3 FDH3632 TC22-8 FDI3632 tc144e TC217
Text: FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9m Features , QS9000 quality systems certification. ©2008 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2 FDB3632 / FDP3632 / FDI3632 / FDH3632 December 2008 Device Marking FDB3632 Device FDB3632 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 , FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2 FDB3632 / FDP3632 / FDI3632 / FDH3632 Package Marking


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PDF FDB3632 FDP3632 FDI3632 FDH3632 O-220AB FDH3632 tc144e3 TC22-8 tc144e TC217
2004 - FDB3632

Abstract: No abstract text available
Text: FDB3632 / FDP3632 / FDI3632 / FDH3636 April 2004 FDB3632 / FDP3632 / FDI3632 / FDH3632 , certification. ©2004 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C FDB3632 / FDP3632 / FDI3632 / FDH3632 Package Marking and Ordering Information Device Marking FDB3632 FDP3632 FDI3632 FDH3632 Device FDB3632 FDP3632 FDI3632 FDH3632 Package TO-263AB TO-220AB TO-262AA TO , : Pulse Width = 100s ©2004 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 / FDH3632


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PDF FDB3632 FDP3632 FDI3632 FDH3636 FDH3632 O-220AB
2008 - FDB3632

Abstract: No abstract text available
Text: FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features , :// . ©2008 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C3 FDB3632 / FDP3632 / FDI3632 / FDH3632 December 2008 Device Marking FDB3632 Device FDB3632 Package TO-263AB Reel Size 330mm Tape Width 24mm , Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C3 FDB3632 / FDP3632 / FDI3632


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PDF FDB3632 FDP3632 FDI3632 FDH3632 O-220AB O-263AB O-262AB O-24manner
2007 - LTC4357MP

Abstract: lt4356-3 48V 100W zener diode SMAT70A MBR10100 FDB3632 LTC4357 LTC4357H 80v solar panel BSS123 5A
Text: Dissipation vs Load Current 6 FDB3632 VINA 48V IN GATE LTC4357 OUT VDD VOUT TO LOAD GND DIODE (MBR10100) 4 3 2 FET ( FDB3632 ) 0 IN GATE LTC4357 POWER SAVED 1 FDB3632 , Current vs DVSD 10 VIN = 48V VSD = 55mV VFINAL VIN = 48V WITH FET ( FDB3632 ) 8 tPD (ns , FDB3632 VINA 48V 48V BUS PSA RTNA IN GATE LTC4357 OUT VDD GND M2 FDB3632 VINB 48V PSB RTNB IN GATE LTC4357 OUT VDD GND M3 FDB3632 VINC 48V PSC RTNC


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PDF LTC4357 LTC4357 LTC4354 LTC4355 LT4356-1/LT4356-2/ LT4356-3 4357fd LTC4357MP lt4356-3 48V 100W zener diode SMAT70A MBR10100 FDB3632 LTC4357H 80v solar panel BSS123 5A
2007 - mini inductances

Abstract: No abstract text available
Text: Power Dissipation vs Load Current 6 FDB3632 VINA 48V IN GATE LTC4357 OUT VDD VOUT TO LOAD GND DIODE (MBR10100) 4 3 2 FET ( FDB3632 ) 0 IN GATE LTC4357 POWER SAVED 1 FDB3632 VINB 48V POWER DISSIPATION (W) 5 OUT 0 2 4 6 CURRENT (A , VSD = 55mV VFINAL VIN = 48V WITH FET ( FDB3632 ) 8 tPD (ns) LOAD CURRENT (A) 1500 1000 , recovery may reach 100A/µs or higher. M1 FDB3632 48V BUS VINA 48V PSA IN GATE OUT


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PDF LTC4357 LTC4354 LTC4355 LT4356-1/LT4356-2/ LT4356-3 4357fd mini inductances
2007 - Not Available

Abstract: No abstract text available
Text: , 10A Diode-OR VINA = 48V FDB3632 Power Dissipation vs Load Current 6 5 POWER DISSIPATION (W) DIODE (MBR10100) 4 3 2 1 FET ( FDB3632 ) 0 0 2 4 6 CURRENT (A) 8 10 4357 TA01b IN GATE LTC4357 GND OUT VDD VOUT TO LOAD POWER SAVED VINB = 48V FDB3632 IN GATE LTC4357 GND OUT VDD 4357 TA01 , . FDB3632 48V BUS VINB = 48V PS2 IN RTNA FDB3632 GATE LTC4357 GND OUT VDD VINC = 48V PS3 RTNA IN FDB3632 GATE LTC4357 GND OUT VDD 4357 F01 Figure 1. Droop Sharing Redundant


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PDF LTC4357 10-Bit 4357fa
2007 - sot 26 Dual N-Channel MOSFET

Abstract: LTCXD
Text: Diode-OR VINA = 48V FDB3632 Power Dissipation vs Load Current 6 5 POWER DISSIPATION (W) IN GATE LTC4357 GND OUT VDD VOUT TO LOAD DIODE (MBR10100) 4 3 2 1 FET ( FDB3632 ) 0 0 2 4 6 CURRENT (A) 8 10 4357 TA01b POWER SAVED VINB = 48V FDB3632 IN GATE LTC4357 GND OUT VDD 4357 TA01 , of the supplies and their initial output voltages. FDB3632 48V BUS VINB = 48V PS2 IN RTNA FDB3632 GATE LTC4357 GND OUT VDD VINC = 48V PS3 RTNA IN FDB3632 GATE LTC4357 GND OUT VDD


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PDF LTC4357 10-Bit 4357f sot 26 Dual N-Channel MOSFET LTCXD
2008 - solar panel 6v to 12v ltc3780

Abstract: solar charge controller ltc3780 48V solar charge controller current sharing diode solar blocking diode 80v solar panel solar panel 6v solar panel 6v to 12v solar panel blocking diode 48v 10A regulator
Text: MOSFET. If the load current causes more than 25mV FDB3632 VINA = 48V IN GATE LTC4357 100 14V SHUNT REGULATOR IN VDD 0.1µF VOUT TO LOAD FDB3632 VINB = 48V IN GATE , operating conditions. In contrast, the FDB3632 7.5m MOSFET dissipates only 7.5m · (10A)2 = 0.75W. The , Magazine · March 2008 VDD GND FDB3632 100W SOLAR PANEL OUT load current is shared , battery. Figure 2 uses the 33 LDESIGN IDEAS LTC4357 with a FDB3632 MOSFET to replace the Schottky


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PDF LTC2932 LTC2930, LTC2931 LTC2932 LTC4357 LTC4355, DFN-14 SSOP-16 solar panel 6v to 12v ltc3780 solar charge controller ltc3780 48V solar charge controller current sharing diode solar blocking diode 80v solar panel solar panel 6v solar panel 6v to 12v solar panel blocking diode 48v 10A regulator
2007 - Solar Charge Controller

Abstract: LTC4357H SMAT70A FDB3632 LTC4357 LTC4357HDCB MBR10100 LT16411 ORing fet 48v 5a SBR1V15DSA
Text: Dissipation vs Load Current 6 FDB3632 VINA 48V IN GATE LTC4357 OUT VDD VOUT TO LOAD GND DIODE (MBR10100) 4 3 POWER SAVED 2 1 FDB3632 VINB 48V POWER DISSIPATION (W) 5 FET ( FDB3632 ) 0 0 IN GATE LTC4357 OUT 2 4 6 CURRENT (A) 8 10 4357 , during reverse recovery may reach 100A/s or higher. M1 FDB3632 48V BUS VINA 48V PS1 IN GATE OUT RTNA LTC4357 VDD GND M2 FDB3632 VINB 48V PS2 IN GATE OUT RTNB


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PDF LTC4357 LTC4357 LTC4350 LTC4352 LTC4354 LTC4355 4357fc Solar Charge Controller LTC4357H SMAT70A FDB3632 LTC4357HDCB MBR10100 LT16411 ORing fet 48v 5a SBR1V15DSA
2007 - Solar Charge Controller

Abstract: 48V 100W zener diode 14v 10A mosfet solar controller FDB3632 solar panel controller p channel mosfet 100v Solar Charge Controller Circuit SMAT70A solar panel 5v
Text: owners. TYPICAL APPLICATION 48V, 10A Diode-OR Power Dissipation vs Load Current 6 FDB3632 VINA 48V IN GATE LTC4357 OUT VOUT TO LOAD VDD GND FDB3632 VINB 48V POWER DISSIPATION (W) 5 DIODE (MBR10100) 4 3 POWER SAVED 2 1 FET ( FDB3632 ) 0 0 IN GATE OUT , suppressor (TransZorb or TVS) connected from OUT to ground clamps the output and prevents FDB3632 VINA 48V 48V BUS PS1 IN GATE OUT RTNA LTC4357 VDD GND FDB3632 VINB 48V PS2


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PDF LTC4357 LTC4357 LTC4350 LT4351 LTC4354 LTC4355 4357fb Solar Charge Controller 48V 100W zener diode 14v 10A mosfet solar controller FDB3632 solar panel controller p channel mosfet 100v Solar Charge Controller Circuit SMAT70A solar panel 5v
FDB3632

Abstract: KDB3632 84NC mosfet smd
Text: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3632( FDB3632 ) TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.2 2.54-0.2 +0.2 15.25-0.2 Low QRR Body Diode , ( FDB3632 ) Electrical Characteristics Ta = 25 Parameter Symbol Drain to source breakdown voltage


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PDF KDB3632 FDB3632) O-263 FDB3632 84NC mosfet smd
Not Available

Abstract: No abstract text available
Text: SMD Type Product specification KDB3632( FDB3632 ) TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.2 2.54-0.2 +0.2 15.25-0.2 Low QRR Body Diode +0.1 0.81-0.1 , 4008-318-123 1 of 2 SMD Type Product specification KDB3632( FDB3632 ) Electrical Characteristics Ta =


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PDF KDB3632 FDB3632) O-263
2007 - Not Available

Abstract: No abstract text available
Text: , 10A Diode-OR VINA 48V FDB3632 Power Dissipation vs Load Current 6 5 POWER DISSIPATION (W) DIODE (MBR10100) 4 3 2 1 FET ( FDB3632 ) 0 0 2 4 6 CURRENT (A) 8 10 4357 TA01b IN GATE LTC4357 GND OUT VDD VOUT TO LOAD POWER SAVED VINB 48V FDB3632 IN GATE LTC4357 GND OUT VDD 4357 TA01 , OUT to ground clamps the output and prevents VINA 48V PS1 IN RTNA LTC4357 GND VDD GATE OUT FDB3632 , output impedance of the supplies and their initial output voltages. VINB 48V PS2 IN RTNA FDB3632


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PDF LTC4357 4357fb
2012 - FDB3632_F085

Abstract: FDB3632-F085 FDB3632
Text: Device Marking FDB3632 Device FDB3632_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 , FDB3632_F085 PSPICE Electrical Model .SUBCKT FDB3632 2 1 3 ; CA 12 8 1.7e-9 Cb 15 14 2.5e-9 Cin 6 8 6.0e-9 , FDB3632_F085 Rev. C1 FDB3632_F085 SABER Electrical Model REV May 2002 template FDB3632 n2,n1,n3 , Semiconductor Corporation FDB3632_F085 Rev. C1 FDB3632_F085 SPICE Thermal Model REV May 2002 FDB3632 , FDB3632_F085 March 2012 FDB3632_F085 N-Channel PowerTrench® MOSFET 100V, 80A, 9m Features


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PDF FDB3632 O-263AB FDB3632_F085 FDB3632-F085
2004 - fuse fall

Abstract: 9V 1A smps
Text: D1 (NOTE 10) Q1 FDB3632 VIN GATE VOUT R1 499 R2 47.5k C2 10nF +OUT1 = 48V Rpb1 Sa Sb 10 FROM CB , CB F2 (NOTE 12) 15A Cpb2 22µF D2 (NOTE 10) Q2 FDB3632 VIN GATE VOUT R5 499 R6 47.5k C4 10nF , is populated with one FDB3632 MOSFET per feed (Nominal value of the MOSFET's rDS(ON) is approximately


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PDF ISL6144 FN9131 ISL6144 fuse fall 9V 1A smps
2004 - power supply 48v 100a

Abstract: parallel mosfet AN 1129 design of mosfet based power supply schematic diagram 48V power supply TP14-TP21 ORing fet 48v 5a circuit diagram of mosfet based power supply high power mosfet transistors name ps2 power supply
Text: in Figure 2 or Figure 3. Note that the ISL6144EVAL1 is populated with one FDB3632 MOSFET per feed , capacitance of 39nF (equivalent to Qtot = 390nC at VGS = 10V). On the ISL6144EVAL1 board, FDB3632 has an , : TABLE 1. INPUT VOLTAGE = 48V ILoad_Max MOSFET PART NUMBER N (Note 1) 8A FDB3632 (Note 2) SUM110N10-08 (Note 3) 1 1 16A FDB3632 (Note 2) SUM110N10-08 FDB045AN08A0 (Note 4) 2 2 1 32A FDB3632 (Note 2) SUM110N10-08 FDB045AN08A0 4 4 3 NOTES: The reverse current peak


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PDF ISL6144EVAL1 AN1129 FDB3632, ISL6144IV, 0-75V TSSOP16 ISL6144IR, power supply 48v 100a parallel mosfet AN 1129 design of mosfet based power supply schematic diagram 48V power supply TP14-TP21 ORing fet 48v 5a circuit diagram of mosfet based power supply high power mosfet transistors name ps2 power supply
2004 - TP24-TP27

Abstract: No abstract text available
Text: in Figure 2 or Figure 3. Note that the ISL6144EVAL1 is populated with one FDB3632 MOSFET per feed , to Qtot = 390nC at VGS = 10V). On the ISL6144EVAL1 board, FDB3632 has an equivalent gate-source , 8A 16A MOSFET PART NUMBER FDB3632 (Note 2) SUM110N10-08 (Note 3) FDB3632 (Note 2) SUM110N10-08 FDB045AN08A0 (Note 4) FDB3632 (Note 2) SUM110N10-08 FDB045AN08A0 N (Note 1) 1 1 2 2 1 4 4 3 32A output , ceramic 150nF, SM1206, 10V 10nF, SM0805, 10V 100nF, SM1206, 100V 100nF, SM1206, 100V FDB3632 , 100V, 9m


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PDF ISL6144EVAL1 AN1129 TSSOP16 TP24-TP27
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