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Part Manufacturer Description Datasheet Download Buy Part
LTC4413EDD-1#TRPBF Linear Technology LTC4413-1 and -2 - Dual 2.6A, 2.5V to 5.5V Fast Ideal Diodes in a 3mm x 3mm DFN; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LTC4413EDD-1#PBF Linear Technology LTC4413-1 and -2 - Dual 2.6A, 2.5V to 5.5V Fast Ideal Diodes in a 3mm x 3mm DFN; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LTC4413EDD-2#TRPBF Linear Technology LTC4413-1 and -2 - Dual 2.6A, 2.5V to 5.5V Fast Ideal Diodes in a 3mm x 3mm DFN; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LTC4413EDD-2#PBF Linear Technology LTC4413-1 and -2 - Dual 2.6A, 2.5V to 5.5V Fast Ideal Diodes in a 3mm x 3mm DFN; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756

FAST DIODE 200A 600V Datasheets Context Search

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N mosfet 250v 600A

Abstract: mosfet 200A mosfet 600V 100A mosfet 600v mosfet 100a 600v 3150 mosfet "MOSFET Module" mosfet low idss mosfet j 114 QJQ0220001
Text: Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module , / 600V 600A Fast Diode Electrical Characteristics Characteristics (Each Mosfet or Each Diode ) Symbol , Baseplate Low Drive Requirement Internal Series Gate Resistors (6 per chip) Low Rds(on) Fast Diodes (5) FS40SM-5 Chips per Mosfet Switch (6) H Series 100A 600V Chips per diode NC NC Inches 3.70 3.150 , =400A 1.85 DIODE V 5 VF Diode Forward Voltage IF= 200A Rth(j-c) Thermal Impedance Junction to


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PDF QJQ0220001 FS40SM-5 N mosfet 250v 600A mosfet 200A mosfet 600V 100A mosfet 600v mosfet 100a 600v 3150 mosfet "MOSFET Module" mosfet low idss mosfet j 114 QJQ0220001
Not Available

Abstract: No abstract text available
Text: = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7Ω Fall , Reverse Recovery Energy IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs , APTGT200DU120G Dual common source Fast Trench + Field Stop IGBT® Power Module C1 , VCES = 1200V IC = 200A @ Tc = 80°C Q2 G1 G2 E1 E2 E G1 C1 E C2 E1


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PDF APTGT200DU120G
2006 - APT0601

Abstract: APT0502 APTGT200DU120G
Text: 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs www.microsemi.com Max Unit 350 2.1 , Current VF 1.4 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7 Fall Time Tf Min 170 Tj = 125°C Tj = 25°C Tj = , Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IF


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PDF APTGT200DU120G APT0601 APT0502 APTGT200DU120G
Not Available

Abstract: No abstract text available
Text: 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7Ω Fall Time Turn-on Delay Time Rise Time Turn-off , 200A VR = 600V di/dt =2500A/µs www.microsemi.com Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25 , = 600V VGE =15V IC = 200A T J = 125°C Eon 400 350 300 30 IF (A) E (mJ) 40


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PDF APTGT200DA120G
2006 - APT0502

Abstract: APT0601 APTGT200DH120G switched reluctance motor parameter
Text: 30 420 Reverse Recovery Energy IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs , 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7 Fall Time Tf Min 170 , Reverse Bias Safe Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J = 125°C 30 Eon , ) www.microsemi.com 4-5 APTGT200DH120G Forward Characteristic of diode 400 VCE= 600V D=50% RG =2.7 TJ


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PDF APTGT200DH120G APT0502 APT0601 APTGT200DH120G switched reluctance motor parameter
Not Available

Abstract: No abstract text available
Text: = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7Ω Fall Time Turn-on Delay Time Rise Time Turn-off , 200A VR = 600V di/dt =2500A/µs www.microsemi.com Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25 , Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J = 125°C Eon 400 350 300 30


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PDF APTGT200DH120G
Not Available

Abstract: No abstract text available
Text: Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A , = 600V VGE =15V IC = 200A T J = 125°C Eon 400 350 300 30 IF (A) E (mJ) 40 , Characteristic of diode 400 VCE= 600V D=50% RG =2.7 TJ=125°C Tc=75°C 50 ZVS 40 300 250 ZCS , APTGT200A120G Phase leg Fast Trench + Field Stop IGBT® Power Module Application • Welding


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PDF APTGT200A120G
2006 - APT0502

Abstract: APT0601 APTGT200SK120G
Text: APTGT200SK120G VCES = 1200V IC = 200A @ Tc = 80°C Buck chopper Fast Trench + Field Stop IGBT , 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs www.microsemi.com Max Unit 350 2.1 , °C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7 Fall , Gate Resistance Reverse Bias Safe Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J


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PDF APTGT200SK120G APT0502 APT0601 APTGT200SK120G
Not Available

Abstract: No abstract text available
Text: APTGT200SK120G VCES = 1200V IC = 200A @ Tc = 80°C Buck chopper Fast Trench + Field Stop , 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7Ω Fall Time Turn-on Delay Time Rise Time Turn-off , 200A VR = 600V di/dt =2500A/µs www.microsemi.com Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25Â


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PDF APTGT200SK120G
2006 - APT0502

Abstract: APT0601 APTGT200H120G
Text: APTGT200H120G VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop IGBT , Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125 , Gate Resistance Reverse Bias Safe Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J , Thermal Impedance (°C/W) 0.16 APTGT200H120G Forward Characteristic of diode 400 VCE= 600V D


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PDF APTGT200H120G APT0502 APT0601 APTGT200H120G
2006 - APT0502

Abstract: APT0601 APTGT200A120G
Text: Energy IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs www.microsemi.com Max , DC Forward Current VF 1.4 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7 Fall Time Tf Min 170 Tj = 125 , Bias Safe Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J = 125°C 30 Eon 400


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PDF APTGT200A120G APT0502 APT0601 APTGT200A120G
Not Available

Abstract: No abstract text available
Text: APTGT200H120G VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop , = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7Ω Fall , Reverse Recovery Energy IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs , €¢ Uninterruptible Power Supplies • Motor control VBUS Q1 Q3 G1 G3 E1 Q2 Features • Fast


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PDF APTGT200H120G
2006 - APT0502

Abstract: APT0601 APTGT200DA120G
Text: Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125 , 450 VCE = 600V VGE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IF (A) E (mJ , Characteristic of diode 400 VCE= 600V D=50% RG =2.7 TJ=125°C Tc=75°C 50 ZVS 40 ZCS 30 T J , APTGT200DA120G Boost chopper Fast Trench + Field Stop IGBT® Power Module VBUS VCES = 1200V


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PDF APTGT200DA120G APT0502 APT0601 APTGT200DA120G
2012 - Not Available

Abstract: No abstract text available
Text: APTGT200H120G VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop , °C) VGE = ±15V VBus = 600V IC = 200A RG = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A RG = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C RG = 2.7ï , Gate Resistance Reverse Bias Safe Operating Area 50 VCE = 600V VGE =15V IC = 200A TJ = 125 , Thermal Impedance (°C/W) 0.16 APTGT200H120G Forward Characteristic of diode 400 VCE= 600V D


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PDF APTGT200H120G
2005 - APTGT200DU120

Abstract: fast recovery Diode 1200V 200A
Text: Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Test Conditions Maximum Reverse Leakage Current , Voltage IF = 200A VGE = 0V trr Reverse Recovery Time IF = 200A VR = 600V Qrr Reverse , Operating Area 50 450 VCE = 600V V GE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IC , Forward Characteristic of diode 400 V CE= 600V D=50% RG=2.7 TJ=125°C Tc=75°C 50 ZCS 40 ZVS


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PDF APTGT200DU120 APTGT200DU120 fast recovery Diode 1200V 200A
2005 - APTGT200H120

Abstract: No abstract text available
Text: APTGT200H120 VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop IGBT , Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Test Conditions Maximum Reverse Leakage Current VR , 200A VGE = 0V trr Reverse Recovery Time IF = 200A VR = 600V Qrr Reverse Recovery , VCE = 600V V GE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IC (A) E (mJ) 40


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PDF APTGT200H120 APTGT200H120
2012 - Not Available

Abstract: No abstract text available
Text: Q2 G1 VCES = 1200V IC = 200A @ Tc = 80°C G2 E1 E2 E Features  Fast Trench , 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A RG = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A RG = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C RG = 2.7 Fall Time Turn-on Delay Time Rise Time Turn-off , Recovery Energy IF = 200A VR = 600V di/dt =2500A/µs www.microsemi.com Tj = 25°C Tj = 125Â


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PDF APTGT200DU120G
2005 - APTGT200A120

Abstract: No abstract text available
Text: Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Test Conditions Maximum Reverse Leakage Current VR , 200A VGE = 0V trr Reverse Recovery Time IF = 200A VR = 600V Qrr Reverse Recovery , VCE = 600V V GE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IC (A) E (mJ) 40 , Forward Characteristic of diode 400 V CE= 600V D=50% RG=2.7 TJ=125°C Tc=75°C 50 ZCS 40 ZVS


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PDF APTGT200A120 APTGT200A120
2005 - APTGT200SK120

Abstract: No abstract text available
Text: APTGT200SK120 VCES = 1200V IC = 200A @ Tc = 80°C Buck chopper Fast Trench + Field Stop IGBT , Reverse Voltage 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Fall Time Td(on) Tr 1.4 , Current 50% duty cycle VF Diode Forward Voltage IF = 200A VGE = 0V trr Reverse Recovery Time IF = 200A VR = 600V Qrr Reverse Recovery Charge di/dt =2500A/µs 1.7 2.0 5.8


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PDF APTGT200SK120 APTGT200SK120
2012 - Not Available

Abstract: No abstract text available
Text: APTGT200SK120G VCES = 1200V IC = 200A @ Tc = 80°C Buck chopper Fast Trench + Field Stop , 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A RG = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A RG = 2.7 VGE = ±15V Tj = 125°C VBus = 600V , Recovery Energy IF = 200A VR = 600V di/dt =2500A/µs www.microsemi.com Tj = 25°C Tj = 125 , diode 400 VCE= 600V D=50% RG=2.7Ω TJ=125°C Tc=75°C 50 ZVS 40 ZCS 30 TJ


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PDF APTGT200SK120G
2012 - Not Available

Abstract: No abstract text available
Text: 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A RG = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A RG = 2.7 VGE = ±15V Tj = 125°C VBus = 600V , Qrr Typ IF = 200A VR = 600V di/dt =2500A/µs Tj = 25°C Tj = 125°C Tc = 80°C Tj = , diode 400 VCE= 600V D=50% RG=2.7Ω TJ=125°C Tc=75°C 50 ZVS 40 ZCS 30 TJ , APTGT200DA120G Boost chopper Fast Trench + Field Stop IGBT3 Power Module VBUS CR1 OUT


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PDF APTGT200DA120G
2012 - Not Available

Abstract: No abstract text available
Text: 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A RG = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A RG = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C RG = 2.7 Fall Time Turn-on Delay Time Rise Time Turn-off , Recovery Energy IF = 200A VR = 600V di/dt =2500A/µs www.microsemi.com Tj = 25°C Tj = 125 , diode 400 VCE= 600V D=50% RG=2.7Ω TJ=125°C Tc=75°C 50 ZVS 40 ZCS 30 TJ


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PDF APTGT200DH120G
2005 - asymmetrical igbt

Abstract: APTGT200DH120
Text: 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Test Conditions Maximum Reverse , Forward Voltage IF = 200A VGE = 0V trr Reverse Recovery Time IF = 200A VR = 600V Qrr , Operating Area 50 450 VCE = 600V V GE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IC , Forward Characteristic of diode 400 V CE= 600V D=50% RG=2.7 TJ=125°C Tc=75°C 50 ZCS 40 ZVS


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PDF APTGT200DH120 asymmetrical igbt APTGT200DH120
2005 - Not Available

Abstract: No abstract text available
Text: f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Min Typ 14 0.8 0.6 260 30 420 70 290 50 520 90 , VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs 200 1.6 1.6 170 280 18 36 2.1 V ns µC May , 8 12 16 Gate Resistance (ohms) 20 VCE = 600V V GE =15V IC = 200A T J = 125°C Eon 50 40 , APTGT200DA120 Boost chopper Fast Trench + Field Stop IGBT® Power Module VBUS VCES = 1200V IC =


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PDF APTGT200DA120 paralleling25
2014 - Not Available

Abstract: No abstract text available
Text: . Revised:05/06/14 Power Module 600V 200A IGBT Module Figure 7:  Diode Forward Characteristics , Power Module 600V 200A IGBT Module MG06200S-BN4MM RoHS ® Features •  igh short , . Revised:05/06/14 Power Module 600V 200A IGBT Module Electrical and Thermal Specifications (TC = 25 , A 0.25 K/W Diode VF Forward Voltage IF= 200A , VGE=0V, TJ =25°C 1.55 IF= 200A , notice. Revised:05/06/14 Power Module 600V 200A IGBT Module Figure 1:  ypical Output


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PDF MG06200S-BN4MM E71639 MG06200
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