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LT1358IS8 Linear Technology LT1358 - Dual 25MHz, 600V/µs Op Amps; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1358CS8#PBF Linear Technology LT1358 - Dual 25MHz, 600V/µs Op Amps; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1358CS8#TRPBF Linear Technology LT1358 - Dual 25MHz, 600V/µs Op Amps; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1359IS#PBF Linear Technology LT1359 - Quad 25MHz, 600V/µs Op Amps; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C
LT1358IS8#TR Linear Technology LT1358 - Dual 25MHz, 600V/µs Op Amps; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1359CS Linear Technology LT1359 - Quad 25MHz, 600V/µs Op Amps; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
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2014 - Not Available

Abstract: No abstract text available
Text: ®ä»–の内容を変更することがあります。 1 目次 耐屈曲性 ページ 600V 2PNCT-B 5 600V 3PNCT-B 7 耐捻回性 ページ 600V 2PNCT-T 9 600V 3PNCT-T 11 リール巻き(低圧) ページ 13 600V 2PNCT-H 600V 2PNCT-H-U 15 600V F-3PNCT 600V FG-3PNCT スプレッダ ページ 17 600V 2PNCT-T-U リール巻き(高圧ï , ¨® 6600V CR- 耐寒シース ENCT 同軸線入り 4 なし 耐屈曲 600V 2PNCT


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2002 - DF200R12KE3

Abstract: DIODE 200A 600V
Text: VGE= 0V, Tvj= 25°C, VCE= 600V ICES - - 5 mA Gate Emitter Reststrom gate emitter , mJ IC= 200A, VCC= 600V Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25°C td,on VGE= ±15V, RG= 3,6, Tvj= 125°C IC= 200A, VCC= 600V , , RG= 3,6, Tvj= 125°C IC= 200A, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn off delay , = 200A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25


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PDF DF200R12KE3 DF200R12KE3 DIODE 200A 600V
2002 - 600v 100a

Abstract: BSM100GAL120DLC
Text: 100A, V CE = 600V VGE = ±15V, R G = 5,6, Tvj = 25°C td,on VGE = ±15V, R G = 5,6, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 100A, V CE = 600V VGE = ±15V, R G = 5,6, Tvj , delay time (inductive load) IC = 100A, V CE = 600V VGE = ±15V, R G = 5,6, Tvj = 25°C td,off , , V CE = 600V VGE = ±15V, R G = 5,6, Tvj = 25°C tf VGE = ±15V, R G = 5,6, Tvj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 100A, V CE = 600V , V GE = 15V


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PDF BSM100GAL120DLC 600v 100a
2002 - FD300R12KE3

Abstract: No abstract text available
Text: 26 - mJ IC= 300A, VCC= 600V Einschaltverzögerungszeit (induktive Last) turn on delay time , = 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 2,4, Tvj= 25°C tr VGE= ±15V, RG= 2,4, Tvj= 125°C IC= 300A, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn , = 125°C IC= 300A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 2 , energy loss per pulse IC= 300A, VCC= 600V , L= 80nH VGE= ±15V, RG= 2,4, Tvj= 125


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PDF FD300R12KE3 601E-02 364E-03 187E-05 FD300R12KE3
Not Available

Abstract: No abstract text available
Text: 600V "3_Œ.+ Î 5 •I- dJ Lb 1 To. sir I 5-5 ».25 2. 54" 3. 5 Very Small «-0. 6 2. 5 30 0 . 8 D B B 0 8 B 100V C 200V E 400V G 600V o. 6 +n 2.5^ »DBB08LT B 100V C 200V E 400V G 600V IS ^ For surface mounted applications 30 Lead type 30 1 . 0 D B B 1 0 B 100V C 200V E 400V G 600V T 6. 5 max^ .31_HL a—tb M. H =T h M 7. 62 -J 0. 25 >5. 0*1 4 D B C 1 0 C 200V E 400V G 600V U 0. 6 a—K-3 li n 4k 3 2 D B A 1 0 B 100V C 200V E 400V G 600V -15. S


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PDF DBB08LT MT891207TR 0D135bG
2003 - transistor k30

Abstract: BSM100GAL120DLC
Text: - µs - tr 0,05 - µs IC = 100A, V CE = 600V VGE = ±15V, R G = 5,6, Tvj = 25 , ) fall time (inductive load) - IC = 100A, V CE = 600V VGE = ±15V, R G = 5,6, Tvj = 25°C VGE = , (inductive load) typ. IC = 100A, V CE = 600V 0,40 - µs IC = 100A, V CE = 600V VGE = ±15V , 100A, V CE = 600V , V GE = ±15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 100A, V CE = 600V , V GE = ±15V Kurzschlußverhalten SC Data RG = 5,6, Tvj = 125°C, L = 60nH


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PDF BSM100GAL120DLC Gate-Emitter-Sp01 transistor k30
2002 - DF300R12KE3

Abstract: chopper,diode
Text: 26 - mJ IC= 300A VCC= 600V Einschaltverzögerungszeit (induktive Last) turn on delay time , = 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 2,4, Tvj= 25°C tr VGE= ±15V, RG= 2,4, Tvj= 125°C IC= 300A, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn , = 125°C IC= 300A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 2 , Kurzschlussverhalten SC data IC= 300A, VCC= 600V , L= 80nH VGE= ±15V, RG= 2,4, Tvj= 125°C IC= 300A, VCC= 600V , L


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PDF DF300R12KE3 DF300R12KE3 chopper,diode
2002 - DIODE 200A 600V

Abstract: FD200R12KE3
Text: Kollektor Emitter Reststrom collector emitter cut off current VGE= 0V, Tvj= 25°C, VCE= 600V ICES - , = 200A, VCC= 600V Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25°C td,on VGE= ±15V, RG= 3,6, Tvj= 125°C IC= 200A, VCC= 600V Anstiegszeit , , Tvj= 125°C IC= 200A, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn off delay time , = 600V Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25°C tf


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PDF FD200R12KE3 601E-02 364E-03 187E-05 FD200R12KE3 DIODE 200A 600V
transistor 600v 25 a

Abstract: BSM100GAL120DLC
Text: , V CE = 600V VGE = ±15V, R G = 5,6 , Tvj = 25°C VGE = ±15V, R G = 5,6 , Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 100A, V CE = 600V VGE = ±15V, R G = 5,6 , Tvj = 25°C VGE = , ) IC = 100A, V CE = 600V VGE = ±15V, R G = 5,6 , Tvj = 25°C VGE = ±15V, R G = 5,6 , Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 100A, V CE = 600V VGE = ±15V, R G = 5,6 , Tvj = , , terminals ­ chip TC=25°C IC = 100A, V CE = 600V , VGE = 15V RG = 5,6 , Tvj = 125°C, LS = 60nH IC = 100A, V CE


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PDF BSM100GAL120DLC transistor 600v 25 a
2001 - DF300R12KE3

Abstract: No abstract text available
Text: Wechselrichter / transistor inverter IC= IC, nom, VCC= 600V Einschaltverzögerungszeit (induktive Last) turn on , , VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 2,4, Tvj= 25°C VGE= ±15V, RG= 2,4, Tvj= 125°C IC= IC, nom, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn off , , VCC= 600V Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn , , VCC= 600V , L= 80nH VGE= ±15V, RG= 2,4, Tvj= 125°C IC= IC, nom, VCC= 600V , L= 80nH VGE= ±15V, RG= 2,4


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PDF DF300R12KE3 499E-02 499E-02 601E-02 601E-02 364E-03 364E-03 DF300R12KE3
2002 - FD200R12KE3

Abstract: MJ 800
Text: Kollektor Emitter Reststrom collector emitter cut off current VGE= 0V, Tvj= 25°C, VCE= 600V ICES - , = 200A, VCC= 600V Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25°C td,on VGE= ±15V, RG= 3,6, Tvj= 125°C IC= 200A, VCC= 600V Anstiegszeit , , Tvj= 125°C IC= 200A, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn off delay time , = 600V Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25°C tf


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PDF FD200R12KE3 FD200R12KE3 MJ 800
2001 - Not Available

Abstract: No abstract text available
Text: nF VGE= 0V, Tvj= 25°C, VCE= 600V ICES - - 5 mA prepared by: Mark Münzer approved , Wechselrichter / transistor inverter IC= IC, nom, VCC= 600V Einschaltverzögerungszeit (induktive Last) turn on , , VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25°C VGE= ±15V, RG= 3,6, Tvj= 125°C IC= IC, nom, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn off , , VCC= 600V Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn


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PDF DF200R12KE3 499E-02 499E-02 601E-02 601E-02 364E-03 364E-03
2002 - DF200R12KE3

Abstract: No abstract text available
Text: , Tvj= 25°C, VCE= 600V ICES - - 5 mA Gate Emitter Reststrom gate emitter leakage , = 600V Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25°C td,on VGE= ±15V, RG= 3,6, Tvj= 125°C IC= IC, nom, VCC= 600V Anstiegszeit , , Tvj= 125°C IC= IC, nom, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn off delay time , , VCC= 600V Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25


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PDF DF200R12KE3 499E-02 364E-03 187E-05 DF200R12KE3
2002 - DF200R12KE3

Abstract: No abstract text available
Text: VGE= 0V, Tvj= 25°C, VCE= 600V ICES - - 5 mA Gate Emitter Reststrom gate emitter , mJ IC= 200A, VCC= 600V Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25°C td,on VGE= ±15V, RG= 3,6, Tvj= 125°C IC= 200A, VCC= 600V , , RG= 3,6, Tvj= 125°C IC= 200A, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn off delay , = 200A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25


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PDF DF200R12KE3 499E-02 364E-03 187E-05 DF200R12KE3
THHN WIRE

Abstract: AWG 10 600V SBS 14 THHN WIRE mm2 SBS50 1387G1 amp 24 awg data sheet 1339G5 16 AWG THHN connector 65 amp
Text: 1339G3 #6 AWG #8 AWG #10 AWG #12 AWG 75 Amp 60 Amp 45 Amp 35 Amp Rating 600V 600V 600V 600V 600V 600V 600V 600V USR CNR Table B: Contacts listed for use with SBS75X Series Contact P/N 1339G2 1339G5 1339G3 1339G3 Wire Size Rating #6 AWG 110 Amp 600V #8 AWG 85 Amp 600V #10 AWG 60 Amp 600V #12 AWG 50 Amp 600V SBS75X Series with auxiliary contacts 1339G2 #6 AWG 105 Amp 600V 1339G5 #8 AWG 80 Amp 600V 1339G3 #10 AWG 55 Amp 600V 1339G3 #12 AWG 45 Amp 600V


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PDF SBS50 SBS75X 1339G2 1339G5 1339G3 E26226. 1S6417 REV07 THHN WIRE AWG 10 600V SBS 14 THHN WIRE mm2 1387G1 amp 24 awg data sheet 1339G5 16 AWG THHN connector 65 amp
BSM200GAL120DLC

Abstract: No abstract text available
Text: Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7 , (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7, Tvj = 25°C tr VGE = ±15V, R G = 4,7 , , V CE = 600V VGE = ±15V, R G = 4,7, Tvj = 25°C td,off VGE = ±15V, R G = 4,7, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7, Tvj , SC Data IC = 200A, V CE = 600V , VGE = 15V RG = 4,7, Tvj = 125°C, LS = 60nH IC = 200A, V CE =


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PDF BSM200GAL120DLC BSM200GAL120DLC
BSM150GAL120DLC

Abstract: No abstract text available
Text: Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 150A, V CE = 600V VGE = ±15V, R G = 5,6 , (inductive load) IC = 150A, V CE = 600V VGE = ±15V, R G = 5,6, Tvj = 25°C tr VGE = ±15V, R G = 5,6 , , V CE = 600V VGE = ±15V, R G = 5,6, Tvj = 25°C td,off VGE = ±15V, R G = 5,6, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 150A, V CE = 600V VGE = ±15V, R G = 5,6, Tvj , SC Data IC = 150A, V CE = 600V , VGE = 15V RG = 5,6, Tvj = 125°C, LS = 60nH IC = 150A, V CE =


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PDF BSM150GAL120DLC gate-001 BSM150GAL120DLC
2002 - FD300R12KE3

Abstract: No abstract text available
Text: 26 - mJ IC= 300A, VCC= 600V Einschaltverzögerungszeit (induktive Last) turn on delay time , = 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 2,4, Tvj= 25°C tr VGE= ±15V, RG= 2,4, Tvj= 125°C IC= 300A, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn , = 125°C IC= 300A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 2 , energy loss per pulse IC= 300A, VCC= 600V , L= 80nH VGE= ±15V, RG= 2,4, Tvj= 125


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PDF FD300R12KE3 FD300R12KE3
2000 - BSM100GAL120DLC

Abstract: No abstract text available
Text: (ind. Last) turn on delay time (inductive load) IC = 100A, VCE = 600V VGE = ±15V, RG = 5,6 , Tvj = , (inductive load) IC = 100A, VCE = 600V VGE = ±15V, RG = 5,6 , Tvj = 25°C tr VGE = ±15V, RG = 5,6 , , VCE = 600V VGE = ±15V, RG = 5,6 , Tvj = 25°C td,off VGE = ±15V, RG = 5,6 , Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 100A, VCE = 600V VGE = ±15V, RG = 5,6 , Tvj , loss per pulse IC = 100A, VCE = 600V , VGE = 15V Abschaltverlustenergie pro Puls turn-off energy


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PDF BSM100GAL120DLC
KF5N50

Abstract: IC 1N4007 kf12n60 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
Text: Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003(HV) 0.5A 600V DF06 , ) IF Type No. 2A 600V VCEO IC TO-92 1.5A TO-126 400V /530V TO-220AB/TO , Half Bridge Switching 7.5A 600V 12A /TO-220IS KHB6D0N40P/F2 6A 400V KHB011N40P1/F2 , -126 TO-220IS TO-220AB Outline Outline Name Name MBM MBS DF DFS Rating 600V / 0.5A 600V / 0.5A 600V / 1A 4.7×3.9×3.1 4.7×3.9×3.1 MBS DF DFS 600V / 0.5A


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PDF OT-23 FLP-14 KTC3003 1N4007 DO-41 MJE13003 MJE13005 O-126 KF5N50 IC 1N4007 kf12n60 diode 400V 4A TO220IS 1N4007 diode bridge MB6S DF06 IC kf13n50
2005 - mip2f2

Abstract: MIP2F2 IC IC301 mip2f MIP2C2 MIP2F2 MIP2C2 MIP41X MIP022X mip025 2200p
Text: MIP2GX T1 BR1 600V 1.5A C5 R3 390pF 33 RSB 100k 2W CSB 0.01uF 630V L2 10uH 4A , D1 80V, 200mA DSB 600V 1.5A 12V IC1 + C2 0.1uF NTRL CT 47uF R1 6.8 R6 10k , MIP2EXDMIP022X MIP2F2 MIP2GX T1 BR1 600V 1.5A C5 R3 390pF 33 RSB 100k 2W CSB , LINE D2 200V,5A D1 80V, 200mA DSB 600V 1.5A 12V MIP2CX IC1 + C2 0.1uF NTRL , 40mWAC100Vin12Vout VCC VCC PWM ILIMIT D101 600V 1.5A R101 51k 2W C103


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PDF MIP022X 200mW 44130kHz MIP022X 100kHz 44kHz 130kHz 44kHz130kHz2 mip2f2 MIP2F2 IC IC301 mip2f MIP2C2 MIP2F2 MIP2C2 MIP41X mip025 2200p
2001 - Not Available

Abstract: No abstract text available
Text: nF f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cres 0,5 nF VGE= 0V, Tvj= 25°C, VCE= 600V , Wechselrichter / transistor inverter IC= IC, nom, VCC= 600V Einschaltverzögerungszeit (induktive Last) turn on , , VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25°C VGE= ±15V, RG= 3,6, Tvj= 125°C IC= IC, nom, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn off , , VCC= 600V Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn


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PDF FD200R12KE3 499E-02 499E-02 601E-02 601E-02 364E-03 364E-03
2002 - FD200R12KE3

Abstract: No abstract text available
Text: Emitter Reststrom collector emitter cut off current VGE= 0V, Tvj= 25°C, VCE= 600V ICES - - , = 600V Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25°C td,on VGE= ±15V, RG= 3,6, Tvj= 125°C IC= IC, nom, VCC= 600V Anstiegszeit , , Tvj= 125°C IC= IC, nom, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn off delay time , , VCC= 600V Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25


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PDF FD200R12KE3 volt45 601E-02 364E-03 187E-05 FD200R12KE3
2011 - LC1-D09 01

Abstract: ED63A 8536SC03
Text: less 600V 480V or less HMCP003, HMCP 600V or less 480V or less 9, 18, 27 CED63B, ED63B , Voltage 480V or less HHED63B Square D / Telemecanique Starter 480V or less 600V 480V or less 600V 480V or less 600V 480V or less 600V EGH, HMCPE, HMCPS CED63A, ED63A NEMA 14BS, 14CS, 14DS Combination Voltage 600V Siemens Breaker 9, 18, 27 HGL HJL HLL 600V Combination Voltage 480V or less 600V 480V or less 600V 480V or less 600V


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PDF 200kA. 200kA UL508A 600VAC, CHT-SCCRUSFM-01 LC1-D09 01 ED63A 8536SC03
2002 - Not Available

Abstract: No abstract text available
Text: = 600V VCE= 0V, VGE= 20V, Tvj= 25°C VCEsat VGE(th) QG Cies Cres ICES IGES min. 5,0 typ. 1,7 2,0 5,8 max , Transistor Wechselrichter / transistor inverter IC= 200A, VCC= 600V Einschaltverzögerungszeit (induktive , °C IC= 200A, VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 3,6, Tvj= 25°C VGE= ±15V, RG= 3,6, Tvj= 125°C IC= 200A, VCC= 600V Abschaltverzögerungszeit (induktive Last , = 200A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls


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PDF DF200R12KE3
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