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REF01AJ8 Linear Technology IC VOLT REF 10V PREC 8-CDIP
REF01J8 Linear Technology IC VOLT REF 10V PREC 8-CDIP
LH0070-0H Linear Technology LH0070 - Precision 10V Reference; Package: METAL CANS; Pins: 3; Temperature Range: 0°C to 70°C
LH0070-1H Linear Technology LH0070 - Precision 10V Reference; Package: METAL CANS; Pins: 3; Temperature Range: -55°C to 125°C
LH0070-2H Linear Technology LH0070 - Precision 10V Reference; Package: METAL CANS; Pins: 3; Temperature Range: -55°C to 125°C
LTC3459EDC#PBF Linear Technology LTC3459 - 10V Micropower Synchronous Boost Converter in ThinSOT; Package: DFN; Pins: 6; Temperature Range: -40°C to 85°C
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9050JCK1F10V14 Schneider Electric Sager - $84.41 $76.24
9050JCK1F10V20 Schneider Electric Sager - $84.41 $76.24
9050JCK1F10V20 Schneider Electric Allied Electronics & Automation - $78.89 $78.89
9050JCK1F10V24 Schneider Electric Allied Electronics & Automation - $78.89 $78.89
9050JCK2F10V20 Schneider Electric Sager - $106.05 $95.79
9050JCK4F10V14 Schneider Electric Allied Electronics & Automation - $99.11 $99.11
9050JCK5F10V20 Schneider Electric Allied Electronics & Automation - $141.60 $141.60
CAMC-M-S-F10-V1 Festo Allied Electronics & Automation - $92.97 $88.32
D13002VF10V Renesas Electronics Corporation Rochester Electronics 24 $10.72 $8.71
D13003RF10V Renesas Electronics Corporation Rochester Electronics 105 $13.63 $11.07
EXB-F10V333G Panasonic Electronic Components Bristol Electronics 2,000 $0.53 $0.10
EXB-F10V473G Panasonic Electronic Components Bristol Electronics 1,400 $0.53 $0.10
HD6413258F10V Renesas Electronics Corporation Rochester Electronics 258 $18.37 $14.93
HD6413388F10V Renesas Electronics Corporation Rochester Electronics 47 $24.74 $20.10
HD64180R1F10V Renesas Electronics Corporation Rochester Electronics 395 $13.34 $10.84
HD6473258F10V Renesas Electronics Corporation ComS.I.T. 4 - -
HD6473298F10V Renesas Electronics Corporation Rochester Electronics 61 $30.28 $24.60
HD6473308RF10V Renesas Electronics Corporation Rochester Electronics 5,848 $38.55 $31.32
HD6473378F10V Renesas Electronics Corporation Rochester Electronics 2 $34.17 $27.77
HD6475388F10V Renesas Electronics Corporation Chip1Stop 5 $151.00 $127.00
HD64F2138AVTF10V Hitachi Ltd ComS.I.T. 1,593 - -
I5DAE175F10V10000S LENZE TME Electronic Components 2 $327.85 $318.51
I5DAE215F10V10000S LENZE TME Electronic Components 2 $445.78 $432.80
J21DF-10V-KX JST Manufacturing Interstate Connecting Components 192 $0.31 $0.31
J21DF-10V-KX JST Manufacturing Chip1Stop 188 $0.73 $0.40
J21DF-10V-KX JST Manufacturing Heilind Electronics 192 $0.31 $0.31
J21DF-10V-KX-L JST Manufacturing TME Electronic Components 241 $0.50 $0.28
KMF10VB472M Nippon Chemi-con Corporation Bristol Electronics 500 - -
KMF10VB472M16X25LL Nippon Chemi-con Corporation Bristol Electronics 1,500 - -
LXF10VB332M16X20LL United Chemi-Con Inc Bristol Electronics 500 $0.75 $0.24
LXF10VB562M16X30LL United Chemi-Con Inc Bristol Electronics 2,283 $0.75 $0.20
LXF10VB681M10X16LL United Chemi-Con Inc Bristol Electronics 28 - -
NZ3F10VT1G ON Semiconductor Avnet - $0.05 $0.05
NZ9F10VST5G ON Semiconductor Avnet - $0.03 $0.02
NZ9F10VT5G ON Semiconductor Rochester Electronics 200,000 $0.07 $0.06
NZ9F10VT5G ON Semiconductor Avnet - $0.02 $0.02
SXF10VB272M12X30LL United Chemi-Con Inc Bristol Electronics 348 $0.75 $0.28
SXF10VB392M16X25LL United Chemi-Con Inc Bristol Electronics 685 $1.65 $0.58
SZNZ3F10VT1G ON Semiconductor Avnet - $0.06 $0.05
TCC1M16A1UF10V SMEC Inc Bristol Electronics 1,800 - -
VZBA-4"-GG-63-T-22-F10-V4V4T Festo Allied Electronics & Automation - $1732.88 $1732.88
VZBA-4"-GG-63-T-22-F10-V4V4T-PP240-R-9 Festo Allied Electronics & Automation - $2372.17 $2372.17
VZBA-4"-GG-63-T-22-F10-V4V4T-PS240-R-9 Festo Allied Electronics & Automation - $2817.13 $2817.13
VZBA-4"-WW-63-T-22-F10-V4V4T-PP240-R-9 Festo Allied Electronics & Automation - $2372.17 $2372.17
VZBA-4"-WW-63-T-22-F10-V4V4T-PS240-R-9 Festo Allied Electronics & Automation - $2817.13 $2817.13

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F/10V datasheet (4)

Part Manufacturer Description Type PDF
F10V25 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
F10V25 Shindengen Electric Silicon Power Mosfet Data Book 1990 Scan PDF
F10V30 Shindengen Electric Power MOSFET 300V 10A Scan PDF
F10V30 Shindengen Electric LVX Series Power MOSFET 300V 10A Scan PDF

F/10V Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
DG190

Abstract: BT7F TL191 DG191 TOSONI DG189B DG189A DG189 100C DG504
Text: .=25r VS= 10V , VD=- 10V V*= 10V , V = —20V 0.05 10 15 nA F„=-7.5V, KS=7.5V 0.05 10 15 Vm = 0.8Vor2.0V UffSKKH Vs= 10V , V„=- 10V F* = 10V , F- = -20V 1000 300 Vd= —7.5V, FS = 7.5V 1000 300 OFF 1 FW = 0.8V or 2.0 V T. = 25°C Vs— 10V , Vo=- 10V V* = 10V , F- = -20V 0.04 10 15 VD— —7.5V, FS = 7.5V 0.03 10 15 nA Fm= 0.8V or 2.0V »fFfiKWH VS= 10V , VD— — 10V V*= 10V , V = â , 7„=FS=7.5V liWCiä (-SOFF Cl> OFF ' IN OIR Vm=0Vlï.hh) /* I I,. ftfFiült'«!« VS= 10V


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PDF DG189 DG190 DG191 2Vor30mA 100mA 450mW 12mW/Â 65--H BT7F TL191 TOSONI DG189B DG189A 100C DG504
2n5485 equivalent transistor

Abstract: transconductance 2N5485 2N4416 equivalent 2N4416A 2N5484 2N4416 SMP4416 SMP4416A G701 J305 equivalent transistor
Text: 100 ­ 100 pA VDG = 10V , ID = 5 mA ­ 100 ­ 100 nA VDG = 10V , ID = 5 mA ­ 25 , ­1 ­5 V VGS ­ 0.3 ­4 ­ 0.3 ­4 V VDS = 10V , ID = 5 mA Drain Saturation Current (Pulsed) IDSS 7 40 7 40 mA VDS = 10V , VGS = ØV 3000 10000 3000 10000 µS VDG = 10V , ID = 5 mA 3000 10000 3000 10000 TA = 125°C VDS = 10V , ID = 1 nA Gate Source , gfs f = 1 kHz µS VDG = 10V , ID = 5 mA f = 100 MHz 100 100 µS VDG = 10V , ID = 5


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PDF 2N4416, 2N4416A 2N4416 O-226AB O-92/18) 2n5485 equivalent transistor transconductance 2N5485 2N4416 equivalent 2N4416A 2N5484 2N4416 SMP4416 SMP4416A G701 J305 equivalent transistor
2N6449

Abstract: MIXER U350 TR320 2N4861 2n4117 equivalent CD860 2N6450 J231 2N5461 SMP5116 2N4858A
Text: MHz Drain Gate Capacitance Cdgo 1.5 1.5 1.5 pF Vdg = 10V , IS = ØA f = 1 MHz , VDS = 20V, VGS = ØV f = 1 MHz Drain Gate Capacitance Cdgo 1.5 1.5 pF VDS = 10V , mA 300 mW 2.4 mW/°C IG = 1 µA, VDS = ØV V VDS = ­ 10V , ID = ­ 1 µA mA VDS = ­ 10V , ØA ­ 1.2 ­ 1.2 nA VDS = ­ 10V , VGS = 10 V ­1 ­1 µA VDS = ­ 10V , VGS = 10 V TA = 150°C 150 150 VGS = ØV, ID = Ø A f = 1 kHz 12 mS VDS = ­ 10V , VGS = ØV


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PDF 2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2n4117 equivalent CD860 2N6450 J231 2N5461 SMP5116 2N4858A
BF316A

Abstract: No abstract text available
Text: = -10 nA -3 V VBE Base-emitter voltage lc =-3mA VCE- 10V -0.75 V hFE DC current gain lc =-3mA VCE = - 10V 30 50 — fT Transition frequency lc =-3mA VCE = -10 V 600 MHz -Cre Reverse capacitance lc =o VCE = - 10V f = 1 MHz 0.25 pF NF Noise figure lc =-3mA VCB = - 10V Rg = 50 ¡n f = 800 MHz lc =-3mA VCB = - 10V Rg = 50 n f = 500 MHz 5 3.5 dB dB Gpb Power gain lc =-3mA VCB = - 10V Rl = 2 kii f = 800 MHz lc =-3mA VCB = - 10V Rl = 2 kfi f = 500 MHz 12 17 dB dB 168 BF 316A ELECTRICAL CHARACTERISTICS


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PDF i27min- --10V VCE--10V BF316A
Not Available

Abstract: No abstract text available
Text: Standard Technical data D4 size D3L size 6.3 to 10V 220 to 470μF P.91 to 92 4.0 to 10V , D3L size 16 to 35V 3.9 to 33μF 10V 150μF B15 size D2E size TPSF 35V 2.7μF 6.3 to 10V 68 to 150μF Low ESR Large capacitance Small size D4 size 16V 33μF High , 4.0 to 10V 47 to 100μF 2.5 to 10V 33 to 100μF TPF D2 size 16 to 35V 10 to 100μF B2 size D2 size 2.5 to 10V 68 to 220μF A09 size P.93 to 94 2.5 to 12.5V 33 to 220Î


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PDF D15size
jfet k 184

Abstract: k 105 jfet DG183 DG184 DG184A DG184B DG185 S2545
Text: €”0.8V T. = 25t Km = 2.0V F0=FS=7.5V 10V , Vo = = 10V , V- - 10V - —20 V VD— —7.5V, FS = 7.5V VS= 10V , v„=-V" = 10V , F = 10V -20V F„=-7.5V, VS = 7.5V Vs— 10V , VD=-F+ = 10V , V- = 10V -20 V -7.5V, Vs—7.5V vs=iov, f„=- F»= 10V , V = 10V -20 V VI)=-7.5V, FS=7.5V »tfa«*iH FS=-5V,/B=0 F„=-5V./, = 0 Fâ , BfES*»6SB 60 75 •is (OFF) 0.8V TS=25V, FS= 10V , Fo=- 10V F+= 10V , F- = -20V 0.06 , 5 Vm=0.SV mrfummm Vs— 10V , Fd=- 10V V*= 10V , y- = -20V


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PDF DG183 DG184 DG185 jfet k 184 k 105 jfet DG184 DG184A DG184B DG185 S2545
TOSONI

Abstract: 100C DG189 DG189A DG189B DG190 DG191 TL191
Text: .=25r VS= 10V , VD=- 10V V*= 10V , V = —20V 0.05 10 15 nA F„=-7.5V, KS=7.5V 0.05 10 15 Vm = 0.8Vor2.0V UffSKKH Vs= 10V , V„=- 10V F* = 10V , F- = -20V 1000 300 Vd= —7.5V, FS = 7.5V 1000 300 OFF 1 FW = 0.8V or 2.0 V T. = 25°C Vs— 10V , Vo=- 10V V* = 10V , F- = -20V 0.04 10 15 VD— —7.5V, FS = 7.5V 0.03 10 15 nA Fm= 0.8V or 2.0V »fFfiKWH VS= 10V , VD— — 10V V*= 10V , V = â , 7„=FS=7.5V liWCiä (-SOFF Cl> OFF ' IN OIR Vm=0Vlï.hh) /* I I,. ftfFiült'«!« VS= 10V


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PDF DG189 DG190 DG191 TOSONI 100C DG189A DG189B TL191
2012 - capacitor 330nf 63V

Abstract: capacitor 220nF 63V Multilayer Ceramic Capacitor 100nF 63V capacitor 1206 63V 470nF capacitor 100nf 1206 560nF c 5763 capacitor 22-25 ceramic capacitor 100nf 63v L1812
Text: CHIP CERAMIC CAPACITOR X5R 1206 1210 1812 2220 2225 6.3V 10V 16V 25V 6.3V 10V 16V 25V 6.3V 10V 16V 25V 6.3V 10V 16V 25V 6.3V 10V 16V 25V 100nF 220nF 330nF 470nF 560nF 680nF 1 2.2 3.3 4.7 10 22 33 47 100 F F F F F F F F F Y5V 1206 1210 1812 2220 2225 6.3V 10V 16V 25V 6.3V 10V 16V 25V 6.3V 10V 16V 25V 6.3V 10V 16V 25V 6.3V 10V 16V 25V 100nF 220nF 330nF 470nF 560nF 680nF 1 2.2 3.3 4.7 10 , 1812 2220 2225 Rated Volatage 6.3V 10V 16V 25V 6.3V 10V 16V 25V 6.3V 10V 16V 25V 6.3V 10V 16V 25V


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PDF Capaci06 100nF 220nF 330nF 470nF 560nF 680nF capacitor 330nf 63V capacitor 220nF 63V Multilayer Ceramic Capacitor 100nF 63V capacitor 1206 63V 470nF capacitor 100nf 1206 c 5763 capacitor 22-25 ceramic capacitor 100nf 63v L1812
TI-85

Abstract: DG187 251C DG186 DG186A DG186B DG188 H150 ELDF
Text: 25t F5= 10V , VD = — 10V F'= 10V , F- = -20V 0.05 10 15 nA VD— —7.5V, FS=7.5V 0.05 10 15 F„ = 0.8Vor2.0V «fFESEíSH FS= 10V , F„=- 10V F"= 10V , F~ = -20V 1000 300 F0 = —7.5V, FS-7.5V 1000 300 ^DiOFFi V/v—0.8V or 2.0V T, = 251C Fs= 10V , FD=- 10V F'= 10V , F- = -20V 0.04 10 15 nA Fd— —7.5V, FS = 7.5V 0.03 10 15 F„=0.8Vor2.0V »fFB*®B Fs= 10V , FD= — 10V F+ = 10V , F , »fia««« 60 75 -4'OFF V/Ar = 0.8Vor2.0V t = 25°^ FS= 10V


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PDF DG186, 20Vp-p DG186 DG187 DG188 Packag10V, TL188 TI-85 DG187 251C DG186A DG186B H150 ELDF
2SK544

Abstract: mosfet 2sk882 2SK543 2SK882 VDS-10V
Text: ) 1.20 12.00 Vds= 10V , Vgs=0 lDSsKi}-CJ3: 1.2~3mA, CJ4: 2. 5~6mA, CJ5: 5~12mA Vgs(±V) 5 lYfsl(mS) 11.00 Vds= 10V . Vgs=0, f=lkHz Id(hA) 30 Ciss(pF) 2. 40 Vds= 10V , Vgs=0, f=lMHz (±ffi) Pd(i« 200 Crss(pF) 0.04 Vds= 10V , Vgs=0. f=lMHz TchCC) 125 PG(dB) 27.00 Vds= 10V ,Vgs=0, f=100MHz □ □ NF(dB) 1.80 3. 00 Vos= 10V ,Vgs=0, f=100MHz •2SK544 M&:FM 1-^—f, VHF ©ittifflo «ft : «Wi»*^^ SI Vds(V) 20 idss(mA) 1. 20 12.00 Vds= 10V ,Vgs-0 IdssK» - D: 1. 2~3mA, E:2. 5


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PDF 2SK543 100MHz 2SK544 mosfet 2sk882 2SK882 VDS-10V
2SK1740

Abstract: ITR01960 ITR01961 ITR01962 ITR01963 ITR01964 ITR01965 ITR01966 VDG-10V
Text: IGSS VGS(off) IG= - 10µA, VDS=0V VGS= - 20V, VDS=0V VDS= 10V , ID=100µA - 2.0 - 3.0 VDS= 10V , VGS=0V VDS= 10V , ID=10mA, f=1kHz 40 10 15 mA mS VDS= 10V , VGS=0V, f=1kHz VDS= 10V , VGS=0V, f=1MHz 22 IDSS* yfs1 yfs2 Ciss 30 11 mS pF Crss NF VDS= 10V , VGS=0V, f=1MHz VDS= 10V , Rg=1k, ID=1mA, f=1kHz 2.5 1.5 pF dB RDS(on) ID=10mA, VGS=0V 30 , 2 : Drain 3 : Gate SANYO : CP ID - VDS 60 VGS=0V -0.5V 40 - 1.0V -1.5V 20


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PDF 2SK1740 N4112 ITR01979 ITR01981 ITR01980 ITR01982 ITR01983 2SK1740 ITR01960 ITR01961 ITR01962 ITR01963 ITR01964 ITR01965 ITR01966 VDG-10V
DG180B

Abstract: DG180 DG180A DG181 DG181A DG182 0T0140 TL182 V075
Text: /siOFFi V/«—2.0V T„ = 25'C FS= 10V , Vo— — 10V V* = 10V , V- = -20V 0.05 10 15 nA , , yB=-iov F»= 10V , F- = -20V 1000 300 -50 -25 0 25 SO 71 100 125 , •^DiOFF) V/jv—2.0V T.=25"C VS= 10V , — 10V F+= 10V , F- = -20V 0.04 10 15 nA Fz>= — 7.5 V, 7.5V 0.03 10 15 210 1*0 I 170 Z £ iso - •s Vm=2.0V utfummm VS= 10V , VB=- 10V F+= 10V , F- = -20V 1000 300


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PDF 20Vp-p DG180 DG181 DG181 DG182 DG182_ TL182 DG180B DG180 DG180A DG181A 0T0140 V075
quanta

Abstract: varistor 514 K50 ISL6236 SCK 054 VARISTOR max1993etg R474 foxconn csp ti 1808 1p0 hy5ps561621afp-25 diagram it8512
Text: BLM21PG600SN1D C757 10U/6.3V/X5R_8 C775 0.1U/ 10V /X5R_4 L90 2 1 BLM21PG600SN1D C783 4.7U/ 10V /X5R_8 4.7U/ 10V /X5R , R622 10K_4 10K_4 10K_4 10K_4 iAMT +CK_VDD_MAIN2 C758 C443 0.1U/ 10V /X5R_4 iAMT C771 C779 C765 C774 C770 C767 C776 0.1U/ 10V /X5R_4 0.1U/ 10V /X5R_4 0.1U/ 10V /X5R_4 0.1U/ 10V /X5R_4 10U/6.3V/X5R_8 0.1U/ 10V /X5R_4 0.1U/ 10V /X5R_4 0.1U/ 10V /X5R_4 0.1U/ 10V /X5R_4 2 9 16 61 39 55 +CK_VDD_MAIN 12 20 26 36 49 45 , C768 0.1U/ 10V /X5R_4 CK505 R627 10K_4 R628 10K_4 C762 0.1U/ 10V /X5R_4 VDD


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PDF 318MHz ICS9LPRS365 64pins MAX1993 64bit/256MB ISL6262A G966-25ADJ PC209 PC208 PC207 quanta varistor 514 K50 ISL6236 SCK 054 VARISTOR max1993etg R474 foxconn csp ti 1808 1p0 hy5ps561621afp-25 diagram it8512
1,5v DC to 24V dC converter circuit diagram

Abstract: Vickers Vickers EHA-CON-201-A-20 EHA-CON-201-A-20 DIN EN 50035 Vickers ramp generator EHA-RMP-201-A-20 zero voltage switching adjustable ramp power supply 24v WIRING DIAGRAM EHA-PSU-704-A3.5-20
Text: output signals " 10V DC Screw terminals reduce wiring installation costs All of user adjustments , " 10V , to match the requirements of Vickers "KA" and "KB" series valves. The output is grounded if , to 10V input, or 0 to 20 mA input Position "I" for: 4 to 20 mA input U I I Input , + 10V x 5 mA Temperature drift <1 mV/_C thru 0-50_C (<0.5 mV/_F thru 32-122_F) Output signal [K] " 10V x 5 mA max. Temperature drift <1 mV/_C thru 0-50_C (<0.5 mV/_F thru 32-122_F) Gain adjustment


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PDF EHA-CON-201-A-20; EHA-RMP-201-A-20; EHA-PSU-201-A-10 1,5v DC to 24V dC converter circuit diagram Vickers Vickers EHA-CON-201-A-20 EHA-CON-201-A-20 DIN EN 50035 Vickers ramp generator EHA-RMP-201-A-20 zero voltage switching adjustable ramp power supply 24v WIRING DIAGRAM EHA-PSU-704-A3.5-20
1997 - CMST2222A

Abstract: No abstract text available
Text: =150mA, IB=15mA IC=500mA, IB=50mA VCE= 10V , IC=0.1mA VCE= 10V , IC=1.0mA VCE= 10V , IC=10mA MIN MAX 10 , rb'Cc NF td tr ts tf TEST CONDITIONS VCE= 10V , IC=150mA VCE= 1.0V , IC=150mA VCE= 10V , IC=500mA VCE=20V, IC=20mA, f=100MHz VCB= 10V , IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE= 10V , IC=1.0mA, f=1.0kHz VCE= 10V , IC=10mA, f=1.0kHz VCE= 10V , IC=1.0mA, f=1.0kHz VCE= 10V , IC=10mA, f=1.0kHz VCE= 10V , IC=1.0mA, f=1.0kHz VCE= 10V , IC=10mA, f=1.0kHz VCE= 10V , IC=1.0mA, f=1.0kHz VCE= 10V , IC=10mA, f=1.0kHz VCB= 10V


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PDF CMST2222A CMST2222A OT-323 100mA, 150mA, x10-4
AH0126

Abstract: 825m F-25V FM25V DG140 DG129 DG126B DG126A DG126 F25V10
Text: IMfffiKtlB -10 10 -8 8 V ''OSiON /s= - 10mA V7AT=2.5V, r« = 25°C Vo= 10V 20 80 n Fo=8V ; 25 100 /s=-10mA _ V,AÌ=2.5V, t&fPSItSSH ° 150 150 /' OFF V/Af=0.8V VS= 10V , V„=- 10V 0.01 1 nA Fs—8V, V„=-8V 0.05 5 ^/J OFF T,= 25'C Fd= 10V , Vs=- 10V 0.005 1 V„=8V, Ks= — 8V 0.025 5 fs:OFF ym=0.8V »fFSKIEH Vs— 10V , V'D=- 10V 100 nA ys=8Y, V„=-8V 100 Im OFF 7„=10V, FS=- 10V 100 V„=8V, Fs— —8V 100 hi1-, ON F,„=2.5V T. = 25


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PDF dg126, DG126 DG129 DG140 20Vp-p, -60dBmin DG140) Fd--10V AH0126 825m F-25V FM25V DG126B DG126A F25V10
npn 60V 600mw

Abstract: 2195A 2243A 150PF 2n2539 2N699 MA8003
Text: 50V 6V 40/200 @ 10V @ 150mA 0.35V 6 1 50/15.0mA 8pF 250MHz IS ¡> 20mA TO-106 ME 6102 250mW 500mA 60V 45V 6V 100/300 @ 10V @> 1 50mA 0.35V 150/1 5.0mA 8pF 250MHz IS 20mA TO-106 ME 8001 300mW 500mA 40V 30V 5V 30/ - @ 10V @> 150mA 0.50V <9 150/15.0mA 15pF 100MHz S 50mA TO-106 ME 8002 300mW 500mA 120 V 80V 7 V 40/200 @ 10V @| 150mA 0.30V S 150/15.0mA 15p F 100MHz S >> 50mA TO-106 ME 8003 300mW 500mA 80V 60V 7 V 1 00/350 @ 10V @ 1 50m A 0.30V S 150/15.0mA 15p F 100MHz S 50mA TO-106 MA 6001 600mW


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PDF O-I06 250mW 500mA 200MHz O-106 npn 60V 600mw 2195A 2243A 150PF 2n2539 2N699 MA8003
2003 - CXT2222A

Abstract: No abstract text available
Text: =150mA, IB=15mA 0.6 VBE(SAT) IC=500mA, IB=50mA hFE VCE= 10V , IC=0.1mA 35 hFE VCE= 10V , IC=1.0mA 50 hFE VCE= 10V , IC=10mA 75 hFE VCE= 10V , IC=150mA 100 hFE VCE= 1.0V , IC=150mA 50 hFE VCE= 10V , IC=500mA 40 fT VCE=20V, IC=20mA, f=100MHz 300 Cob VCB= 10V , IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f , hfe hfe hoe hoe rb'Cc NF td tr ts tf TEST CONDITIONS VCE= 10V , IC=1.0mA, f=1.0kHz VCE= 10V , IC=10mA, f=1.0kHz VCE= 10V , IC=1.0mA, f=1.0kHz VCE= 10V , IC=10mA, f=1.0kHz VCE= 10V , IC=1.0mA, f


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PDF CXT2222A OT-89 150mA, x10-4 CXT2222A
Not Available

Abstract: No abstract text available
Text: 47μF 2.5 to 12.5V 33 to 220μF 35V 2.7μF P.81 TPU 2.5 to 10V 4.7 to 100μF P.82 TPH 2.5 to 10V 33 to 100μF P.82 TPH TPU 2.5 to 6.3V 100 to 220μF TPC TPG , 270μF 16V 33μF 16 to 25V 22 to 47μF D3L size TPE 2.0 to 10V 47 to 470μF TPSF , specifications P.85 TPE 2.5 to 10V 68 to 470μF 6.3 to 10V 68 to 330μF 2.5 to 10V 220 to 680μF 10V 150μF 2.5 to 10V 330 to 1,500μF P.89 to 90 P.93 to 94 P.97 to 98 P.89 to 90


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BF273

Abstract: BF 273 transistor transistor BF273 ot 273 CE 470 10V transistor J4s 10.7 MHZ transistor bf 254 bf 107 a transistor bf 153
Text: Collector cutoff current (VBE = 0) VCE = 10V VCE = 10V Tamb = 100°C 100 50 nA IxA V(br) cBoCollector-base , = 1 mA VCE = 10V 0.70 V hFE DC current gain lc = 1 mA VCE = 10V for BF 273 for BF 273 Gr. C for BF 273 Gr. D 35 70 120 35 75 — fT Transition frequency lc = 1 mA VCE = 10V 400 600 MHz NF Noise figure lc = 1 mA VCE = 10 V Rg = 400 n f = 100 MHz 2 dB -Cre Reverse capacitance |c =0 VCE = 10V f = 1 MHz 0.41 PF GDe Power gain lc = 1 mA VCE = 10V f = 470 kHz lc = 1 mA VCE = 10 V f =10.7 MHz lc = 1 mA


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PDF BF273 BF 273 transistor transistor BF273 ot 273 CE 470 10V transistor J4s 10.7 MHZ transistor bf 254 bf 107 a transistor bf 153
2013 - Not Available

Abstract: No abstract text available
Text: 2220 Code 6.3V 10V 16V 25V 6.3V 10V 16V 25V 35V 50V 6.3V 10V 16V 25V 35V 50V 10V 16V 25V 35V 50V 25V , 226 E E G G G X6S (S) Series Size 0402 0603 0805 1206 1210 Code 6.3V 6.3V 10V 16V 25V 6.3V 10V 16V 25V 6.3V 10V 16V 25V 35V 50V 10V 16V 25V 35V 50V 105 O B B B B D D E E E 225 B , Code 6.3V 10V 16V 25V 6.3V 10V 16V 25V 50V 6.3V 10V 16V 25V 50V 6.3V 10V 16V 25V 50V 6.3V 10V 16V 25V , 6.3V 10V 6.3 10V 16V 25V 6.3V 10V 16V 25V 50V 10V 16V 25V 10V 16V 25V 35V 105 O O B B B B B D


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2001 - marking code k22

Abstract: CMKT2222A transistor k22
Text: =500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE= 10V , IC=0.1mA VCE= 10V , IC=1.0mA VCE= 10V , IC=10mA VCE= 1.0V , IC=150mA VCE= 10V , IC=150mA VCE= 10V , IC=500mA MIN O MAX 10 10 10 10 75 40 , =20V, IC=20mA, f=100MHz 300 MHz Cob VCB= 10V , IE=0, f=1.0MHz 8.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz 25 pF hie VCE= 10V , IC=1.0mA, f=1.0kHz 2.0 8.0 k hie VCE= 10V , IC=10mA, f=1.0kHz 0.25 1.25 k hre VCE= 10V , IC=1.0mA, f=1.0kHz 8.0 x10-4 hre VCE= 10V , IC=10mA, f=1.0kHz 4.0 x10-4 hfe VCE= 10V


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PDF CMKT2222A OT-363 x10-4 100mA, 150mA, marking code k22 CMKT2222A transistor k22
1997 - CXT2222A

Abstract: No abstract text available
Text: =50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE= 10V , IC=0.1mA VCE= 10V , IC=1.0mA VCE= 10V , IC=10mA MIN MAX 10 , VCE= 10V , IC=150mA 100 VCE= 1.0V , IC=150mA 50 VCE= 10V , IC=500mA 40 VCE=20V, IC=20mA, f=100MHz 300 VCB= 10V , IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE= 10V , IC=1.0mA, f=1.0kHz 2.0 VCE= 10V , IC=10mA, f=1.0kHz 0.25 VCE= 10V , IC=1.0mA, f=1.0kHz VCE= 10V , IC=10mA, f=1.0kHz VCE= 10V , IC=1.0mA, f=1.0kHz 50 VCE= 10V , IC=10mA, f=1.0kHz 75 VCE= 10V , IC=1.0mA, f=1.0kHz 5.0 VCE= 10V , IC=10mA, f=1.0kHz 25 VCB= 10V , IE=20mA, f


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PDF CXT2222A CXT2222A OT-89 100MHz 150mA,
kb3926

Abstract: CR2940 NORTH BRIDGE Crestline 82C557 quanta ALPR365K05 ene kb3926 max8724 CH501H-40PT BF49
Text: C483 0.1uF/ 10V C482 0.1uF/ 10V C451 0.1uF/ 10V C466 0.1uF/ 10V C485 0.1uF/ 10V 2 2 14.318MHz A L36 1 2 BLM21PG600SN1D C449 4.7uF/6.3V_6 C450 1 C463 2 4.7uF/6.3V_6 VDDCPU 0.1uF/ 10V L39 1 2 BLM21PG600SN1D 1 1 1 1 C453 C455 4.7uF/6.3V_6 1 +CK_VDD_MAIN2 +CK_VDD_MAIN C465 0.1uF/ 10V 1 C467 0.1uF/ 10V VDDCPU +CK_VDD_MAIN2 16 9 2 61 39 55 12 20 26 45 36 49 48 RP37 4P2R-S-2.2K 1 3 Q24 , CLK_MCH_BCLK 6 CLK_MCH_BCLK# 6 120 ohms@100Mhz 2 2 2 2 2 4.7uF/6.3V_6 C245 0.1uF/ 10V


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PDF 318MHz ALPR365K05 64pins 768KHz 25MHz PR164 DTC144EUA 2N7002E kb3926 CR2940 NORTH BRIDGE Crestline 82C557 quanta ene kb3926 max8724 CH501H-40PT BF49
CD860

Abstract: IFN860 NJ3600L IF3602 IFN5911 IFN5912
Text: 250 nA VGS = ­ 15V, VDS = ØV ­ 100 ­ 100 pA VDG = 10V , ID = 5 mA ­ 100 ­ 100 nA VDG = 10V , ID = 5 mA ­ 25 IGSS IG Min Process NJ30L or NJ36D ­ 100 V(BR)GSS , = 10V , ID = 5 mA Drain Saturation Current (Pulsed) IDSS 7 40 7 40 mA VDS = 10V , VGS = ØV 3000 10000 3000 10000 µS VDG = 10V , ID = 5 mA 3000 10000 3000 10000 TA = 125°C VDS = 10V , ID = 1 nA Gate Source Voltage TA = 150°C Dynamic Electrical


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PDF IFN5911, IFN5912 IFN5911 CD860 IFN860 NJ3600L IF3602 IFN5911 IFN5912
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