The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC1040MJ Linear Technology IC DUAL COMPARATOR, 750 uV OFFSET-MAX, 80000 ns RESPONSE TIME, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18, Comparator
LTC1040CJ Linear Technology IC DUAL COMPARATOR, 750 uV OFFSET-MAX, 80000 ns RESPONSE TIME, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18, Comparator
LT1078S16 Linear Technology IC DUAL OP-AMP, 750 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1112CS8 Linear Technology IC DUAL OP-AMP, 750 uV OFFSET-MAX, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier
LT1079S Linear Technology IC QUAD OP-AMP, 750 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1055CH#PBF Linear Technology IC OP-AMP, 750 uV OFFSET-MAX, 4.5 MHz BAND WIDTH, MBCY8, LEAD FREE, METAL CAN, TO-5, 8 PIN, Operational Amplifier
SF Impression Pixel

Search Stock (4)

  You can filter table by choosing multiple options from dropdownShowing 4 results of 4
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
EW-05-13-L-D-750 Samtec Inc Avnet - $1.11 $0.86
EW-05-13-L-D-750 Samtec Inc Newark element14 100 $1.95 $0.88
EW-05-13-L-D-750 Samtec Inc Sager 141 $1.01 $0.61
EW-05-13-L-D-750 Samtec Inc Samtec 147 $0.91 $0.50

No Results Found

EW-05-13-L-D-750 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - Not Available

Abstract: No abstract text available
Text: compliant, exemptions may apply Document Number: 91090 S11- 0513 -Rev. B, 21-Mar-11 www.vishay.com 1 This , td(off) tf LD LS VGS = 0 V, ID = - 250 A Reference to 25 °C, ID = - 1 mA VDS = VGS, ID = - 250 A , Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD ) Notes a. Repetitive rating , %. www.vishay.com 2 Document Number: 91090 S11- 0513 -Rev. B, 21-Mar-11 This datasheet is , °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91090 S11- 0513 -Rev. B, 21


Original
PDF IRF9Z24, SiHF9Z24 2002/95/EC O-220AB O-220AB 11-Mar-11
2013 - Not Available

Abstract: No abstract text available
Text: HMC1082LP4E v00. 0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz AMPLIFIERS - , HMC1082LP4E v00. 0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Gain vs. Temperature , 2 HMC1082LP4E v00. 0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Psat vs , www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1082LP4E v00. 0513 GaAs , 4 HMC1082LP4E v00. 0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Gain & Power vs


Original
PDF HMC1082LP4E HMC1082LP4E
IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND 8ROM fa214 2SK2637 2SJ419 marking WMM
Text: tables on other pages. LD Sor- i es < Low Dr i vo ) VDSS : 1 2V-200V Applications * Li ion battery , CPH640KKA) Neh CPH6403(KC) Neh CPH6 ±10 ±12 ±10 3 4 6 1.6 1.6 1.6 0.4-1.4 0.4-1.3 0.5-1.3 4.8 7.2 9 0.16 , 1.5 1.3 1.5 1.3 0.4-1.4 0.4—1.3 0.5-1.3 0.4-1.4 0.4-1.4 0.4-1.3 0.4-1.3 5 10 12 10 8 15 10 135m/185m , 38m/50m - 450 420 900 980 600 750 500 2SK2440 2SK2441 2SK2637 S0P8 ±10 ±12 ±20 6 7 8 ★2 2 2 , 14 ★ 1.8 2 ★1.8 ★2 2 ★2 0.4-1.4 0.4-1.4 0.4-1.3 0.4-1.3 0.4-1.3 0.5-1.3 16 25 18 18 32 45 65m


OCR Scan
PDF SC-63 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> IRF 850 mosfet Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND 8ROM fa214 2SK2637 2SJ419 marking WMM
Not Available

Abstract: No abstract text available
Text: apply Document Number: 91090 S11- 0513 -Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is , td(off) Fall Time LD Internal Source Inductance LS VGS = - 10 V ID = - 11 A, VDS = , dominated by LS and LD ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature , : 91090 S11- 0513 -Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT , 10-1 91090_02 Fig. 2 - Typical Output Characteristics, TC = 175 °C Document Number: 91090 S11- 0513


Original
PDF IRF9Z24, SiHF9Z24 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2013 - Not Available

Abstract: No abstract text available
Text: delivery 05-2013, Rev. 0513 www.te.com © 2013 Tyco Electronics Corporation, a TE Connectivity Ltd , ) Preliminary Datasheet Dimensions, vertical design EWA (100A) EWC (120A) 2 05-2013, Rev. 0513 , terminals or shunt implementation on request 05-2013, Rev. 0513 www.te.com © 2013 Tyco Electronics


Original
PDF EW100/120 UC3/IEC62055-31 250VAC 400VAC
2014 - Not Available

Abstract: No abstract text available
Text: apply Document Number: 91090 S11- 0513 -Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is , td(off) Fall Time LD Internal Source Inductance LS VGS = - 10 V ID = - 11 A, VDS = , dominated by LS and LD ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature , : 91090 S11- 0513 -Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT , 10-1 91090_02 Fig. 2 - Typical Output Characteristics, TC = 175 °C Document Number: 91090 S11- 0513


Original
PDF IRF9Z24, SiHF9Z24 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2013 - Not Available

Abstract: No abstract text available
Text: HMC1190LP6GE v03. 0513 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ Fractional-N PLL & VCO , apps@hittite.com HMC1190LP6GE v03. 0513 Table 1. Electrical Specifications, (Unless Otherwise Specified, the , Support: Phone: 978-250-3343 or apps@hittite.com 2 HMC1190LP6GE v03. 0513 BROADBAND HIGH IP3 DUAL , www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1190LP6GE v03. 0513 , www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 4 HMC1190LP6GE v03. 0513


Original
PDF HMC1190LP6GE HMC1190LP6GE HMC384LP4E HMC384LP4E
max 9694 e

Abstract: No abstract text available
Text: VDS=3V, Vos=0V Pinch-off Voltage at VDS=3 V. lD =35mA Transconductance at VDS=3V, I[y=350mA Thermal , VDS=10V, lD =350mA, f= 6.4GHz mA V mS °C/W dBm dB % 500 -4.0 250 30 700 -2 .0 900 -1.5 20 gm 300 15 31 P i dB* G ld B * 7.5 28 8.5 33 - Power-Added Efficiency POtJT = , , ¡Ds=350m A (GHz) 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 , 0297 0.321 0.370 0.436 0.447 0.473 0.513 0.529 0.540 0.555 0.572 0589 0.610 0.626 0.661 0683 0.676 0713


OCR Scan
PDF HWC30YUB HWC30YUB 31dBm, 350mA max 9694 e
2013 - Not Available

Abstract: No abstract text available
Text: HMC1082LP4E v00. 0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz AMPLIFIERS - , Support: Phone: 978-250-3343 or apps@hittite.com HMC1082LP4E v00. 0513 GaAs pHEMT MMIC MEDIUM POWER , apps@hittite.com 2 HMC1082LP4E v00. 0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Psat vs , www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1082LP4E v00. 0513 GaAs , 4 HMC1082LP4E v00. 0513 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5.5 - 18 GHz Gain & Power vs


Original
PDF HMC1082LP4E HMC1082LP4E
Not Available

Abstract: No abstract text available
Text: apply Document Number: 91090 S11- 0513 -Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is , Rise Time Turn-Off Delay Time td(off) Fall Time tf Internal Drain Inductance LD , dominated by LS and LD ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature , : 91090 S11- 0513 -Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT , 10-1 91090_02 Fig. 2 - Typical Output Characteristics, TC = 175 °C Document Number: 91090 S11- 0513


Original
PDF IRF9Z24, SiHF9Z24 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Not Available

Abstract: No abstract text available
Text: compliant, exemptions may apply Document Number: 91090 S11- 0513 -Rev. B, 21-Mar-11 www.vishay.com 1 This , td(off) tf LD LS VGS = 0 V, ID = - 250 A Reference to 25 °C, ID = - 1 mA VDS = VGS, ID = - 250 A , Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD ) Notes a. Repetitive rating , %. www.vishay.com 2 Document Number: 91090 S11- 0513 -Rev. B, 21-Mar-11 This datasheet is , °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91090 S11- 0513 -Rev. B, 21


Original
PDF IRF9Z24, SiHF9Z24 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
2015 - Not Available

Abstract: No abstract text available
Text: apply Document Number: 91090 S11- 0513 -Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is , td(off) Fall Time LD Internal Source Inductance LS VGS = - 10 V ID = - 11 A, VDS = , dominated by LS and LD ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature , : 91090 S11- 0513 -Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT , 10-1 91090_02 Fig. 2 - Typical Output Characteristics, TC = 175 °C Document Number: 91090 S11- 0513


Original
PDF IRF9Z24, SiHF9Z24 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2012 - irf9z24

Abstract: No abstract text available
Text: compliant, exemptions may apply Document Number: 91090 S11- 0513 -Rev. B, 21-Mar-11 www.vishay.com 1 This , td(off) tf LD LS VGS = 0 V, ID = - 250 A Reference to 25 °C, ID = - 1 mA VDS = VGS, ID = - 250 A , Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD ) Notes a. Repetitive rating , %. www.vishay.com 2 Document Number: 91090 S11- 0513 -Rev. B, 21-Mar-11 This datasheet is , °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91090 S11- 0513 -Rev. B, 21


Original
PDF IRF9Z24, SiHF9Z24 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irf9z24
2013 - Not Available

Abstract: No abstract text available
Text: apps@hittite.com HMC1197LP7FE v02. 0513 Pin Descriptions Pin Number Function Description 40 LD , HMC1197LP7FE v02. 0513 Wideband Direct Quadrature Modulator w/ Fractional-N PLL & VCO, 100 - , HMC1197LP7FE v02. 0513 Wideband Direct Quadrature Modulator w/ Fractional-N PLL & VCO, 100 - 4000 MHz , apps@hittite.com 2 HMC1197LP7FE v02. 0513 Wideband Direct Quadrature Modulator w/ Fractional-N PLL & VCO , : 978-250-3343 or apps@hittite.com HMC1197LP7FE v02. 0513 Wideband Direct Quadrature Modulator w


Original
PDF HMC1197LP7FE HMC1197LP7FE HMC384LP4E
2013 - Not Available

Abstract: No abstract text available
Text: HMC951LP4E v03. 0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz Typical Applications , Support: Phone: 978-250-3343 or apps@hittite.com HMC951LP4E v03. 0513 GaAs MMIC I/Q DOWNCONVERTER , Support: Phone: 978-250-3343 or apps@hittite.com 9-2 HMC951LP4E v03. 0513 GaAs MMIC I/Q , apps@hittite.com HMC951LP4E v03. 0513 GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz Quadrature Channel Data , www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-4 HMC951LP4E v03. 0513


Original
PDF HMC951LP4E HMC951LP4E
IRF9630

Abstract: SiHF9630 SiHF9630-E3
Text: , exemptions may apply Document Number: 91084 S11- 0513 -Rev. C, 21-Mar-11 www.vishay.com 1 This , Time LD VDD = - 100 V, ID = - 6.5 A, Rg = 12 , RD = 15 , see fig. 10b tf Internal Drain , , dI/dt = 100 A/sb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD , . Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91084 S11- 0513 -Rev. C, 21 , °C Document Number: 91084 S11- 0513 -Rev. C, 21-Mar-11 6 7 8 9 10 Fig. 3 -


Original
PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF9630 SiHF9630-E3
Not Available

Abstract: No abstract text available
Text: PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage SYMBOL BVqss VGS(TH) TEST CONDITIONS lD = , °C TC = 125°C 0.210 VGS = 0V to -20V Vg S - 0V to -12V Vqs = 0V to -2V 22 49 Vq D = -100V, lD = 15A 120 MIN -200 -2.0 -1.0 TYP MAX -7.0 -6.0 25 250 100 200 -4.57 0.290 0.513 120 160 280 120 240 150 9.8 32 , ) V Id(OFF) VDD = -100V, lD = 15A, Rl = 6.67Q, Vqs - -12V, Rgs = 4-7n tf Qg(TOT) °g(12) Q9(TH , % Rated Value Tc = 25°C at Rated lD ip = 1.0mA MAX ±20 (Note 7) ±25 (Note 7) ±20% (Note 8) ±20% (Note 8


OCR Scan
PDF JANSR2N7404 -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms;
2011 - Not Available

Abstract: No abstract text available
Text: Document Number: 91086 S11- 0513 -Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change , . UNIT VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS , is dominated by LS and LD ) Notes a. Repetitive rating; pulse width limited by maximum junction , : 91086 S11- 0513 -Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT , Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91086 S11- 0513


Original
PDF IRF9640, SiHF9640 2002/95/EC O-220AB O-220AB 11-Mar-11
Not Available

Abstract: No abstract text available
Text: containing terminations are not RoHS compliant, exemptions may apply Document Number: 91088 S11- 0513 -Rev. B , 4.5 - Rise Time Turn-Off Delay Time td(off) Fall Time LD VGS = - 10 V ID = - 6.7 , V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD ) Notes a , μs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91088 S11- 0513 -Rev. B, 21 , Document Number: 91088 S11- 0513 -Rev. B, 21-Mar-11 6 7 8 9 10 Fig. 3 - Typical Transfer


Original
PDF IRF9Z14, SiHF9Z14 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Not Available

Abstract: No abstract text available
Text: 125°C - - 0.513 a - - 120 ns - - 160 ns ^D(OFF) - - , CONDITIONS | q = 1mA, V q 5 = OV V GS = V DS> lD = 1mA Zero Gate Voltage Drain Current bss , -12V VDD = -100V, lD = 15A, Rl 6.67SÌ, VGS -12V, Rqs = 4.7SÌ VGS = OV to -20V > CJ V , Charge at 12V V DD = -100V, lD 15A Gate Charge Source Q gs - 22 32 nC Gate Charge Drain Q gd - 49 67 nC lD = 15A, VDS = -15V - -6 - V VDs = -25V


OCR Scan
PDF FSF9250D, FSF9250R -200V, O-254AA 36MeV/mg/cm2
2011 - Not Available

Abstract: No abstract text available
Text: may apply Document Number: 91092 S11- 0513 -Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is , . UNIT VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS , is negligible (turn-on is dominated by LS and LD ) Notes a. Repetitive rating; pulse width limited , www.vishay.com 2 Document Number: 91092 S11- 0513 -Rev. B, 21-Mar-11 This datasheet is subject to change , Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91092 S11- 0513 -Rev. B, 21


Original
PDF IRF9Z34, SiHF9Z34 2002/95/EC O-220AB O-220AB 11-Mar-11
2011 - Not Available

Abstract: No abstract text available
Text: Document Number: 91084 S11- 0513 -Rev. C, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change , . UNIT VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS , is negligible (turn-on is dominated by LS and LD ) Notes a. Repetitive rating; pulse width limited , www.vishay.com 2 Document Number: 91084 S11- 0513 -Rev. C, 21-Mar-11 This datasheet is subject to change , - Normalized On-Resistance vs. Temperature Document Number: 91084 S11- 0513 -Rev. C, 21


Original
PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 11-Mar-11
2011 - IRF9Z14

Abstract: No abstract text available
Text: not RoHS compliant, exemptions may apply Document Number: 91088 S11- 0513 -Rev. B, 21 , LD VGS = - 10 V ID = - 6.7 A, VDS = - 48 V, see fig. 6 and 13b VDD = - 30 V, ID = - 6.7 A , and LD ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91088 S11- 0513 , ° C Document Number: 91088 S11- 0513 -Rev. B, 21-Mar-11 6 7 8 9 10 Fig. 3 -


Original
PDF IRF9Z14, SiHF9Z14 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF9Z14
IRF9640

Abstract: SiHF9640 SiHF9640-E3
Text: Document Number: 91086 S11- 0513 -Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to , Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS Between lead , - 11 A, dI/dt = 100 A/sb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD , . Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91086 S11- 0513 -Rev. B, 21 , ) Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91086 S11- 0513 -Rev. B, 21


Original
PDF IRF9640, SiHF9640 O-220AB 11-Mar-11 IRF9640 SiHF9640-E3
IRF9Z34

Abstract: SiHF9Z34 SiHF9Z34-E3
Text: , exemptions may apply Document Number: 91092 S11- 0513 -Rev. B, 21-Mar-11 www.vishay.com 1 This , tf Internal Drain Inductance LD Internal Source Inductance LS VDD = - 30 V, ID = - 18 , LD ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91092 S11- 0513 , ) Fig. 2 - Typical Output Characteristics, TC = 175 °C Document Number: 91092 S11- 0513 -Rev. B, 21


Original
PDF IRF9Z34, SiHF9Z34 O-220AB 2002/95/EC O-220AB 11-Mar-11 IRF9Z34 SiHF9Z34-E3
Supplyframe Tracking Pixel