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OMAP3525ECUSA Texas Instruments Applications Processor 423-FCBGA -40 to 105
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EUPEC DD 105 N 16 L Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
EUPEC DD 105 N 16 L

Abstract: all type of thyristor EUPEC tt 162 n 16 EUPEC Thyristor thyristor tt 162 n EUPEC Thyristor TT thyristor tt 162 n 12 module bsm 25 gp 120 tt 162 n 16 Eupec bsm 25 gb 120
Text: AC-Switches TD B6 H K 135 N 16 L OF DD diode module TT thyristor module TD thyristor/diode B6 three , neuen eupec Produke DD F4 FS 400 B 1. n Konstruktionsvariante S 1. n elektrische Selektion R S 33 K PowerBLOCK Module F L S E TT 162 N 16 K O F -K TT DD ND, DZ, TZ TD, DT , Brückengleichrichter und Drehstromsteller TD B6 H K 135 N 16 L OF DD Dioden-Modul TT Thyristor-Modul TD , K TT 162 N 16 K O F -K TT DD ND, DZ, TZ TD, DT AD with 2 thyristors with 2 diodes with


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1999 - FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Text: Technologies Company go to content go to content eupec eupec European Power Semiconductors and , Semiconductors in Module- and Disc-design. eupec was founded in January 1990, when the Power Semiconductor areas of Siemens and AEG merged. Since April, 1999 eupec has been a 100 % subsidiary of Infineon , France, and with agencies in all important industrial regions worldwide. eupec has set worldwide industrial standards by its product innovations. In this connection, eupec all the time focuses its


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PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
2000 - X 4202S

Abstract: 4202S l4202s SIDC81D120H6
Text: ns 105 A 135 15 nC 26.6 tbd A/ µ s tbd 1 Edited by INFINEON Technologies AI PS DD HV3, L 4202S , 2 Edited by INFINEON Technologies AI PS DD HV3, L 4202S, Edition 1, 8.01.2002 Preliminary , PS DD HV3, L 4202S, Edition 1, 8.01.2002 Preliminary SIDC81D120H6 FURTHER ELECTRICAL , Technologies AI PS DD HV3, L 4202S, Edition 1, 8.01.2002 Infineon Technologies , A This chip is used for: · EUPEC power modules and discrete devices Applications: · SMPS


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PDF SIDC81D120H6 C67047-A2209sawn 4202S, X 4202S 4202S l4202s SIDC81D120H6
2000 - diode 6a 400v

Abstract: No abstract text available
Text: ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 4324M , PS DD HV3, L 4324M, Edition 1, 3.12.01 Preliminary SIDC03D60F6 CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 4324M, Edition 1, 3.12.01 Preliminary SIDC03D60F6 FURTHER , Technologies AI PS DD HV3, L 4324M, Edition 1, 3.12.01 Infineon Technologies , A This chip is used for: · EUPEC power modules and discrete devices Applications: · SMPS


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PDF SIDC03D60F6 Q67050-A4037sawn 4324M, diode 6a 400v
2000 - Not Available

Abstract: No abstract text available
Text: 2 Edited by INFINEON Technologies AI PS DD HV3, L 4324M, Edition 1, 3.12.01 Preliminary , 240 nC 400 tbd A/ µ s 4 1 4.9 Edited by INFINEON Technologies AI PS DD HV3, L 4324M, Edition 1, 3.12.01 Preliminary SIDC03D60F6 CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L , Technologies AI PS DD HV3, L 4324M, Edition 1, 3.12.01 Infineon Technologies , A This chip is used for: · EUPEC power modules and discrete devices Applications: · SMPS


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PDF SIDC03D60F6 Q67050-A4037sawn 4324M,
single phase bridge fully controlled rectifier

Abstract: EUPEC DD 105 N 16 L single phase fully controlled rectifier 3 phase rectifier circuit thyristor EUPEC DD 151 N 14 k EUPEC tt 105 N 16 thyristor TT 18 N eupec FZ 800 R 16 EUPEC Thyristor B/B0615 DIODE
Text: B6 W3 105 N 16 K OF diode module thyristor module thyristor/diode three phase bridge three , K O F -A -K Diode modules DD 151 N 18 K -A DD D, ND, DZ 151 N S 18 L K -A -K , 800 R 17 K F 6 D B2 FF FZ FS FP F4FD DD 800 R S 17 K F L S E 1. n C D B1.n , H B C F L M N critical rate of rise forward voltage, thyristors for line commutated , output current (A) (W3C: RMScurrent) N phase control thyristor/diode 16 repetitive peak off-state


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2000 - Not Available

Abstract: No abstract text available
Text: INFINEON Technologies AI PS DD HV3, L 4501A, Edition 1, 22.10.2001 Preliminary SIDC110D170H Maximum , tbd 1 Edited by INFINEON Technologies AI PS DD HV3, L 4501A, Edition 1, 22.10.2001 Preliminary SIDC110D170H CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 4501A, Edition 1, 22.10.2001 , or other persons may be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 4501A, Edition , coefficient A This chip is used for: · EUPEC power modules C Applications: · resonant applications


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PDF SIDC110D170H Q67050-A4179sawn
1998 - 3 phase bridge fully controlled rectifier

Abstract: tt 60 n 16 kof press-pack igbt single phase fully controlled rectifier thyristor control ic with current sense dc to dc chopper by thyristor 3 phase rectifier thyristor bridge specification of reverse conducting thyristor asymmetric thyristor thyristor tt 121
Text: 18 L K -A -K ISOPACK modules ECONOPACK modules 105 N 16 K OF C H U K 105 N TT 121 , ISOPACK-Module ECONOPACK-Module TD B6 HK DD TT TD B6 W3 135 N 16 K OF Dioden-Modul Thyristor-Modul , Netzthyristor/Diode N 16 periodische Spitzensperrspannung in 100V L mech.Ausführung: Module , 5.Letter B C F G H B C F L M N 58 critical rate of rise forward voltage , L S 1 2 3 4 Half-controlled thyristor modules TD 121 N 18 K O F -A TD,DT with 1 symmetric


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2000 - SIDC110D170H

Abstract: No abstract text available
Text: 23°C Edited by INFINEON Technologies AI PS DD HV3, L 4501A, Edition 1, 22.10.2001 Preliminary , Technologies AI PS DD HV3, L 4501A, Edition 1, 22.10.2001 A µC A / µs tbd 1 Preliminary SIDC110D170H CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 4501A, Edition 1, 22.10.2001 , PS DD HV3, L 4501A, Edition 1, 22.10.2001 Infineon Technologies , : · EUPEC power modules C Applications: · resonant applications, drives Die Size Package


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PDF SIDC110D170H Q67050-A4179A001 SIDC110D170H
082c

Abstract: EUPEC powerblock 34Q32R
Text:  EUPEC LIE D ■34032^7 □□DlE?b □ 10 ■UPEC DD 260 N , ND 260 N Elektrische , Copyrighted By Its Respective Manufacturer EUPEC DD 260 N , DD 261 N LIE D ■34Q32R7 □□□127ä HUPEC , Respective Manufacturer EUPEC DD 261 N blE D m 34032^7 OOOIS?1! 62T «UPEC ^^^ Elektrische Eigenschaften , Hz 5 • 9,81 m/s2 Maßbild DD 260 N Maßbild ND 260 N outline DD 260 N outline ND 260 N 8 10 DD 260 N können auch mit gemeinsamer Anode oder gemeinsamer Kathode geliefert werden. DD 260 N can


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PDF tvjS25Â 082c EUPEC powerblock 34Q32R
082c

Abstract: 0Q0127 34d321 082-C
Text:  EUPEC Li IE D ■34D32T7 QGG157b □ 10 ■UPEC DD 260 N , ND 260 N Elektrische , INC. • 258 EUPEC DD 260 N , DD 261 N blE D 34D3217 0Q01277 TS7 «UPEC IM , no-load conditions, vRM = 0.8 VRRM. 259 EUPEC DD 260 N , DD 261 N LIE D 34G32R7 □□□127fl 113 , thermal impedance ZlhJ0 per arm for DC. 260 EUPEC DD 261 N blE J> m 3403217 0001271 62T MUPEC , Hz 5 • 9,81 m/s2 Maßbild DD 260 N Maßbild ND 260 N outline DD 260 N outline ND 260 N 8 10


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PDF 34D32T7 QGG157b tvj--40Â 082c 0Q0127 34d321 082-C
EUPEC powerblock

Abstract: thyristor TT 46 N Thyristor eupec POWERBLOCK tt 25 n powerblock EUPEC tt 105 N 16 thyristor tt 500 n 16 EUPEC POWERBLOCK TD thyristor tt 250 n 16 powerblock tt 60 N thyristor eupec tt 251 n 14
Text: TT TD B6 W3 105 N 16 K OF diode module thyristor module thyristor/diode three phase , thyristors 105 output current (A) (W3C: RMScurrent) N phase control thyristor/diode 16 repetitive , 121 N F 18 L K O F -A -K Diode modules DD 151 N 18 K -A DD D, ND, DZ 151 N S 18 , part-no. represent the current rating [A] Part No. DD 85 N DD 89 N DD / ND 98 N DD / ND 104 N Packages Part No. DD 175 N DD 231 N DD / ND 260 N DD 261 N DD 285 N DD 350 N DZ 540 N DZ 600 N


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EUPEC DD 90 N 16 K

Abstract: EUPEC DD 151 N 14 k eupec dd 90 n 12 L nb 358 d EUPEC T 218 N 12 EUPEC T 508 EUPEC outline TT308 EUPEC T 308 n
Text: EUPEC T 1270 N Typenrethe/Type range Elektrische Eigenschaften S2E D 34D32T7 0G0Dfl22 4MÛ , cooling 227 ' EUPEC T 1270 N 52E ] > 34032^7 0000325 1S7 U P E C T-25-21 1 1 R th3C (K , Nachlaufladung Q s Maximum lag charge Q § Cu/ n ] - 228 EUPEC M aßbilder/O utlines car * _ 5¿E J , 31 N . U 237 EUPEC M aßbilder/O utlines SEE 3 m 34032T7 0000835 0Tb U P E C T-91-20 t « f T SN 16 - dd *- T 16 N.C T 25 N.C 8 T 16 N.B T 25 N.B T 36 N.C


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PDF 34D32T7 0G0Dfl22 T-91-20 5x315 EUPEC DD 90 N 16 K EUPEC DD 151 N 14 k eupec dd 90 n 12 L nb 358 d EUPEC T 218 N 12 EUPEC T 508 EUPEC outline TT308 EUPEC T 308 n
Not Available

Abstract: No abstract text available
Text: N.U 17 N.U 24 N.U 31 N . U 237 EUPEC SEE 3 m 3M032T7 0000835 0Tb ■U P E C M aßbilder/O utlines T-91-20 t « f T SN 16 — T 16 N.C T 25 N.C dd *— 8 T 16 N.B T 25 N .B T 36 N.C T 4 6 N .C 11 T 35 N.B T 4 5 N .B T 6O N.B T 8 5 N .B T 115 N.B - k l - 10 238 T 36 N . U T 46 N.U 12 EUPEC S2E  , medium temperature t* at natural cooling, heatsink type KL 91 160 - 0 rrn n l 50 100


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PDF 00G07QL, T160N T-91-20 5x315
2000 - SIDC03D60F6

Abstract: diode 6A 600v
Text: month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 4324M , charge Edited by INFINEON Technologies AI PS DD HV3, L 4324M, Edition 2, 14.05.2003 A nC A , PS DD HV3, L 4324M, Edition 2, 14.05.2003 Preliminary SIDC03D60F6 FURTHER ELECTRICAL , be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 4324M, Edition 2, 14.05.2003 , applications, drives Die Size 6A A This chip is used for: · EUPEC power modules and discrete


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PDF SIDC03D60F6 Q67050-A4037A001 4324M, SIDC03D60F6 diode 6A 600v
2000 - SIDC03D60F6

Abstract: No abstract text available
Text: month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 4324M , charge Edited by INFINEON Technologies AI PS DD HV3, L 4324M, Edition 2, 14.05.2003 A nC A , PS DD HV3, L 4324M, Edition 2, 14.05.2003 Preliminary SIDC03D60F6 FURTHER ELECTRICAL , be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 4324M, Edition 2, 14.05.2003 , applications, drives Die Size 6A A This chip is used for: · EUPEC power modules and discrete


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PDF SIDC03D60F6 Q67050-A4037A001 4324M, SIDC03D60F6
2000 - SIDC03D60F6

Abstract: No abstract text available
Text: month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 4324M , charge Edited by INFINEON Technologies AI PS DD HV3, L 4324M, Edition 2, 14.05.2003 A nC A , PS DD HV3, L 4324M, Edition 2, 14.05.2003 Preliminary SIDC03D60F6 FURTHER ELECTRICAL , be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 4324M, Edition 2, 14.05.2003 , applications, drives Die Size 6A A This chip is used for: · EUPEC power modules and discrete


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PDF SIDC03D60F6 Q67050-A4037A001 4324M, SIDC03D60F6
EUPEC tt 170 n 14

Abstract: EUPEC tt 170 n 12 eupec dd 76 n 12 l EUPEC DD 171 N EUPEC tt 250 n eupec TT EUPEC tt 170 N 16 EUPEC tt 25 N 12
Text:  EUPEC TT 111 F, TD 111 F, DT 111 F blE D m 34D32'Î7 GODISI 153 «UPEC Elektrische , /ns 6. Kennbuchstabe/6th letter L 500 50 V/pis 6. Kennbuchstabe/6th letter M 1000 500 V/us , = 10 n Ih max. 250 mA Einraststrom latching current tv = 25°C, vD = 6 V, Rqk > 20 £2 II max. 1 , der Dioden siehe unter DD 122 S bei VRRM ^ 800 V und DD 121 S bei VRRM > 1000 V For data of the diode refer to DD 122 S at VRRM < 800 V and DD 121 S at VHRM > 1000 V TT 111 F, TD 111 F, DT111 F können


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PDF 34D32' EUPEC tt 170 n 14 EUPEC tt 170 n 12 eupec dd 76 n 12 l EUPEC DD 171 N EUPEC tt 250 n eupec TT EUPEC tt 170 N 16 EUPEC tt 25 N 12
EUPEC TD 101

Abstract: EUPEC tt 162 n 16 dvr circuit diagram DDD11 EUPEC TT 25 N 14 TT101F EUPEC DD 350 EUPEC TT EUPEC tt 25 N 12
Text: . Kennbuchstabe/6th letter C 500 500 V/ns 6. Kennbuchstabe/6th letter L 500 50 V/ n s 6. Kennbuchstabe/6th ,  EUPEC TT 101 F, TD 101 F, DT 101 F blE » ■34D3S17 OGDllVT MUPEC Elektrische Eigenschaften , 40 C.tvj max VDSM = VDRM forward off-state voltage R ückwärts-Stoßspitze nspan n un g , der Freiwerdezeit/Immediately after turn-off time Daten der Dioden siehe unter DD 122 S bei VRRM < 800 V und DD 121 S bei VRRM > 1000 V For data of the diode refer to DD 122 S at VRRM < 800 V and DD


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PDF 34D3S17 EUPEC TD 101 EUPEC tt 162 n 16 dvr circuit diagram DDD11 EUPEC TT 25 N 14 TT101F EUPEC DD 350 EUPEC TT EUPEC tt 25 N 12
Not Available

Abstract: No abstract text available
Text: SN — dd *— 16 T 16 N .C T 25 N .C 8 T 16 N.B T 25 N .B T 36 N .C T 4 6 N .C 11 T 35 N.B T 4 5 N .B T 6O N.B T 8 5 N .B T 115 N.B - k l - 10 238 T 36 N . U T 46 N .U 12 EUPEC S2E » ■34032^7 00GQfl3b T32 ■U , 127 I EUPEC 52E J > 34032^7 T 210 N 000072S 27b BUPEC T—25—19 0 , T T T T T 12 N.U 15.1 N .U 17 N .U 24 N .U 31 N . U 237 EUPEC SEE 3


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PDF T210N T-91-20 5x315
ws dvd 290

Abstract: EUPEC DD 151 N 14 k EUPEC TD 25 eupec t30 hsm 002 DDD1171 3MD35 8N71 EUPEC tt 25 N 12
Text:  EUPEC blE T> m 34D32T7 DDDllb5 354 ■UPEC TT 71 F, TD 71 F, DT 71 F Elektrische , V/fis 6. Kennbuchstabe/6th letter L 500 50 V/ns 6. Kennbuchstabe/6th letter M 1000 500 V/fis , Freiwerdezeit/lmmediately after turn-off time Daten der Dioden siehe unter DD 122 S bei VRRM < 800 V und DD 121 S bei VHRM > 1000 V For data of the diode refer to DD 122 S at VRRM < 800 V and DD 121 S at VRRM , UNDERWRITERS LABORATORIES INC. 145 This Material Copyrighted By Its Respective Manufacturer EUPEC 71 F, TD


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PDF 34D32T7 ws dvd 290 EUPEC DD 151 N 14 k EUPEC TD 25 eupec t30 hsm 002 DDD1171 3MD35 8N71 EUPEC tt 25 N 12
FS450R12KE3 S1

Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 BSM35GP120 V61-14
Text: 80 550 550 TD B6HK 74 N 16 RR TD B6HK 104 N 16 RR TD B6HK 124 N 16 RR 3 phase bridge rectifier, uncontrolled with brake chopper Id/Tc A/°C DD B6U 104 N 16 RR DD B6U 134 N 16 RR 3 , rectifier, uncontrolled DD B6U 85 N 1) DD B6U 145 N 1) DD B6U 205 N 1) DD B6U 215 N 2) 1200, 1600 , eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative , and superior source for all of their semiconductors requirements. eupec Inc.'s local inventory


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PDF E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 BSM35GP120 V61-14
2000 - SIDC56D120E

Abstract: 2000A power diode
Text: technologies AI IP DD HV2, L 4222E, Edition 1, 30.08.2000 Preliminary SIDC56D120E Maximum Ratings , 5 0 ° C Edited by INFINEON technologies AI IP DD HV2, L 4222E, Edition 1, 30.08.2000 A / µs , endangered. Edited by INFINEON technologies AI IP DD HV2, L 4222E, Edition 1, 30.08.2000 Infineon , coefficient Chip Type VCE SIDC56D120E 1200V ICn 75A A This chip is used for: · EUPEC , 85 di/dt=2000A/ µs VR = 6 0 0 V Tj = 150 °C 105 Qrr1 I F =75A Tj= 2 5 ° C Qrr2


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PDF SIDC56D120E 50mm2 C67047-A4686 165pes 4222E, SIDC56D120E 2000A power diode
ta 1259 n

Abstract: No abstract text available
Text: eupec T1258N T 1259 N S 2 E ]> ■34032*17 O O O O fll? OflO ■U P E C T 1258 , allowable case temperature tc at anode sided cooling 0 T 125 N 9 ® 90* l ^10 - 2* Ncieo* X , forced cooling, VL = 120 l /s, on heatsink type K 0.05 F. 1 222 tavm [ a ] - EUPEC 52E , T SN 16 — T 16 N.C T 25 N.C dd *— 8 T 16 N.B T 25 N.B T 36 N.C T 4 6 N .C 11 T 35 N.B T 4 5 N .B T 6O N.B T 8 5 N .B T 115 N.B - k l


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PDF T1258N T-91-20 5x315 ta 1259 n
EUPEC TT 60 f

Abstract: No abstract text available
Text: f°C/W] 2 0,0095 Pos. n 0,0078 0,086 0,412 2,45 f l max T F ,)6 * t [s , EUPEC blE D ■34032^7 □DQIB'JS ‘iSS BHIJPEC T T 111 F, T D 111 F, D T111 , Isolations-Prüfspannung V/us V/ n s 1,9 1,2 1,4 150 2 10 0,25 250 1 V V mû mA V mA V mA A y , = 25°C, vD = 6 V, Rqk > 20 n Vo = 0,6 A, d i G/ d t = 0,6 A/jis, tv j = tv j m a x , Zündverzug Freiwerdezeit 2) 50 500 50 500 max. B C L M ,) 50 500 500 1000 (dv


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