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Catalog Datasheet MFG & Type PDF Document Tags
1995 - 56-Lead TSOP Package

Abstract: TSOP 56 LAYOUT 28F008SA 28F016SA svs 357 ORCAD PCB LAYOUT BOOK PCB Layout tsop package intel schematics AP-393
Text: AVAILABLE PACKAGES 1 4 0 PCB LAYOUTS 4 1 Compatible Layout for Upgrading from Two 8-Mbit to One 16-Mbit FlashFile Component 4 2 Compatible Layout for Intel's 16-Mbit FlashFile Component to 16-Mbit ROM Chip 4 3 Compact Layout for Intel's 16-Mbit FlashFile Component Using Standard 56-Lead TSOP Pinout 4 4 Compatible Layout for Upgrading from Four 8-Mbit to Two 16-Mbit FlashFile Components 4 5 Compatible Layout , Upgrading from Two 8-Mbit (PSOP Packaging) to One 16-Mbit (SSOP Packaging) 1 2 CONTENTS PAGE


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PDF AP-607 56-Lead 16-Mbit 44-Lead 28F016SA 56-Lead TSOP Package TSOP 56 LAYOUT 28F008SA svs 357 ORCAD PCB LAYOUT BOOK PCB Layout tsop package intel schematics AP-393
1998 - 4Mx4 dram simm

Abstract: TTP32 SIMM72 dram card 60 pin 334k 4Mx8 dram simm 4MX16* dram fpm 8KX8 32MByte TTP42
Text: DRAM EDO 16Mx8 60 TTP-32 3.0-3.6 4k refresh HM5116100 16Mbit DRAM FPM 16Mx1 60; 70 CP-26 4.5-5.5 4k refresh HM5116100B 16Mbit DRAM FPM 16Mx1 60; 70; 80 CP-26 5.0 4k refresh HM5116160 16Mbit DRAM FPM 1Mx16 60; 70 CP-42 TTP-50 4.5-5.5 4k refresh HM5116160A 16Mbit DRAM FPM 1Mx16 60; 70; 80 CP-42 TTP-42 5.0 4k refresh HM5116160B 16Mbit DRAM FPM 1Mx16 60; 70; 80 CP


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PDF ATA-68 CF-50 15MByte HB286015C3 HB286030A3 30MByte 4Mx4 dram simm TTP32 SIMM72 dram card 60 pin 334k 4Mx8 dram simm 4MX16* dram fpm 8KX8 32MByte TTP42
Q67100-Q1279

Abstract: 39516800 39S16800AT-8 39516800AT-10
Text: 16MBit Synchronous DRAM · Multiple Burst Operation · Automatic Command and Read with Single Write , . The chip is fabricated with SIEMENS'advanced 16MBit DRAM process technology. The device is designed to , Q67100-Q1337 Û67ÏÔÔ-ÛÏ331 Ordering Code Package HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM , /16xAT-8/-10 16MBit Synchronous DRAM Vdd NC Vssq DQO Vddq NC Vssq DQ1 Vddq NC NC WE CAS RAS CS A11 A10 , Description HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM Pin CLK Type Input Signal


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PDF HYB39S1640x/80x/16xAT-8/-10 16MBit P-TSOPI-44 400mil Q67100-Q1279 39516800 39S16800AT-8 39516800AT-10
SS35L

Abstract: smd marking YB Q67100-Q1244 AAFL1
Text: SIEMENS' advanced 16MBit DRAM process technology. The device is designed to comply with all JEDEC , Electronic-Library Service CopyRight 2003 SIEMENS H YB 39S16400/800/160T-10/-12 16MBit Synchronous DRAM Ordering , Electronic-Library Service CopyRight 2003 SIEMENS H YB 39S16400/800/160T-10/-12 16MBit Synchronous DRAM Pin , 16MBit Synchronous DRAM Pin Configuration (top view) "dd C 1o 2 50 □ "ss DQO C 49 □ DQ1 5 DQ1 C 3 48 , Electronic-Library Service CopyRight 2003 SIEMENS H YB 39S16400/800/160T-10/-12 16MBit Synchronous DRAM Signal Pin


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PDF 0235bOS SS35L smd marking YB Q67100-Q1244 AAFL1
1997 - 3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 16Mbit FRAM HM62832 hm62256 Dram 168 pin EDO 8Mx8 flash 32 Pin PLCC 16mbit HN27C1024
Text: 60;70;80 168 DIMM 3.3 buffered HM5116400 16Mbit DRAM FPM 4Mx4 50;60;70 26 CP;TTP 5.0 4k refresh HM5117400 16Mbit DRAM FPM 4Mx4 50;60;70 26 CP;TTP 5.0 2k refresh HM5116405 16Mbit DRAM EDO 4Mx4 50;60;70 26 CP;TTP 5.0 4k refresh HM5117405 16Mbit DRAM EDO 4Mx4 50;60;70 26 CP;TTP 5.0 2k refresh HM5116160 16Mbit DRAM FPM 1Mx16 50;60;70 42 CP;TTP 5.0 4k


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PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 16Mbit FRAM HM62832 hm62256 Dram 168 pin EDO 8Mx8 flash 32 Pin PLCC 16mbit HN27C1024
SGRAM

Abstract: 24 pin 16mbit DRAM or1280 upd4811650 Graphics Accelerator
Text: NEW PRODUCTS 2 16M-BIT SYNCHRONOUS GRAPHICS RAM µPD4811650 Kei Takeuchi Photo 1 , resolution and more display colors. To satisfy these needs, NEC has developed the first 16M-bit synchronous graphics RAM (SGRAM) in the industry. Product Outline The 16M-bit SGRAM developed this time satisfies , Engineering Department, Semiconductor Solution Engineering Division · · Thin-QFP package The 16M-bit , dots x 65,536 colors by using two units of 16M-bit SGRAM (4M bytes). The drawing performance of a


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PDF 16M-BIT PD4811650 PD4811650 SGRAM 24 pin 16mbit DRAM or1280 upd4811650 Graphics Accelerator
NEC uPD

Abstract: NEC AND 1994 AND sdram
Text: .31 1994 © N E C Corporation 02 b427525 DDM TISS 3D7 « N E C E M £ C 16Mbit , 4 M7G « N E C E l\IE C ^ * 1_ 16Mbit Synchronous DRAM CONTENTS Ordering , Corporation 03 ( 427525 Q4tì l 2 b 243 «N E C E 16Mbit Synchronous DRAM fM e c Part , MNECE N E C 16Mbit Synchronous DRAM Symbol CLK (input pin) Function CLK is the master , ) Mar. 31 1994 ©NEC Corporation 05 b42752S Q 4cl l 2 f i O it. « N E C E 16Mbit


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PDF uPD4516421 uPD4516821 uPD4516161 216-bit 152-word 576-word 288-word x16-bit NEC uPD NEC AND 1994 AND sdram
1999 - Not Available

Abstract: No abstract text available
Text: HYB39S16160CT-5.5/-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed , fabricated with INFINEON' advanced 16MBit DRAM process technology. The device is designed to comply with all , interfaces. INFINEON Technologies 1 4.99 HYB39S16160CT-5.5/-6/-7 16MBit Synchronous DRAM , UDQM CLK CKE NC A9 A8 A7 A6 A5 A4 Vss INFINEON Technologies 2 HYB39S16160CT-5.5/-6/-7 16MBit , noise immunity. INFINEON Technologies 3 HYB39S16160CT-5.5/-6/-7 16MBit Synchronous DRAM Row


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PDF HYB39S16160CT-5 16MBit
2001 - 28F320B3

Abstract: TE28F320B3TA100 TE28F320B3TC70 vf bga INTEL FLASH MEMORY pcn Intel AP-729
Text: 02 /08/00 iv Version -002 Minor text edits in Section 2.0, Device Identification, and Table 7, 16-Mbit and 32-Mbit Package Width and Height Dimensions Description AP-729 1.0 , respect to the 16-Mbit and 32-Mbit (the two common densities between the 0.18µm and 0.25µm Advanced Boot , Boot Block = TE28F320B3TC70 Also, for the 16-Mbit and 32-Mbit devices, when migrating from 0.25µm to , for both the 16-Mbit and 32-Mbit devices. Table 1, "Read Timing Differences on 16-Mbit Density" on


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PDF AP-729 28F004/400B3, 28F008/800B3, 28F016/ 160B3, 28F320B3 x8/x16) 28F320B3 TE28F320B3TA100 TE28F320B3TC70 vf bga INTEL FLASH MEMORY pcn Intel AP-729
1998 - P-TSOPII-44

Abstract: CAZ MARKING AZ2 marking
Text: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced , clock. The chip is fabricated with SIEMENS'advanced 16MBit DRAM process technology. The device is , /-10 16MBit Synchronous DRAM Ordering Information Type Ordering Code Package Description , /160BT-8/-10 16MBit Synchronous DRAM Vdd NC Vssq DQ0 Vddq NC Vssq DQ1 Vddq NC NC WE CAS , 16MBit Synchronous DRAM Signal Pin Description Pin Type Signal Polarity Function CLK


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PDF HYB39S16400/800/160BT-8/-10 16MBit P-TSOPI-44 400mil PC100 P-TSOPII-44 CAZ MARKING AZ2 marking
1998 - 39S16802AT-10

Abstract: marking t8 Q67100-Q1279 Q67100-Q1277 BX-4T P-TSOPII-44 Q67100-Q1335 Q67100-Q1333 Q67100-Q1327 Q67100-Q1323
Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM (second generation , clock. The chip is fabricated with SIEMENS'advanced 16MBit DRAM process technology. The device is , HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM Ordering Information Type Ordering Code Package , Reference Voltage (SSTL version only) Semiconductor Group 2 HYB39S1640x/80x/16xAT-8/-10 16MBit , 16MBit Synchronous DRAM Signal Pin Description Pin Type Signal Polarity Function CLK


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PDF HYB39S1640x/80x/16xAT-8/-10 16MBit 39S16802AT-10 marking t8 Q67100-Q1279 Q67100-Q1277 BX-4T P-TSOPII-44 Q67100-Q1335 Q67100-Q1333 Q67100-Q1327 Q67100-Q1323
Not Available

Abstract: No abstract text available
Text: .4B7525 005544H 47Ö 625 NEC 16Mbit Synchronous DRAM Ordering information Organization (word X , UPD4516161G5-A13 UPD4516161G5-A15 *£„ clock Frequency D0SS443 304 _ ■NEC 16Mbit , 16Mbit Synchronous DRAM (4Mx4) LVTTL Vcc NC VssQ DQO VccQ NC VssQ DQ1 VccQ NC NC WE CAS , Ground Supply Voltage for DQ Ground for DQ No connection NEC PIN OUT 16Mbit Synchronous DRAM , ) !?j@@@@@O@ UTS* 02 - 18.81 M X A. L, 1.13 MAX 630 _ _ ■i L427S25 G0SS447 TST


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PDF PD4516421 UPD4516421, UPD4516821, 152-word 576-word 288-word x16-bit 400-mil 44-pin 400-mil,
MPEG2

Abstract: 32bit sdram MPEG2 encoder MN85560 video stream 27mhz ASK
Text: can be processed with this LSI and two 16Mbit SDRAM. I Applications DVD Recorder, Multimedia PC, MPEG2 Camcorder I Block diagram SDRAM ( 16Mbit ) SDRAM ( 16Mbit ) MIF Digital Video (ITU-R , VCLK 27MHz ctl MPEG2 Video Encoder SCLK 27MHz Chip ctl SDRAM 16Mbit DMA , ctl 16bit data 27MHz MPU SDRAM 16Mbit 16bit data ctl MPEG2 Video Encoder Logic 16bit data SDRAM 16Mbit Bus Bridge SDRAM 16Mbit ctl 8bit/1bit data 16bit


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PDF MN85560 27MHz 16Mbit 16bit 32bit MPEG2 32bit sdram MPEG2 encoder MN85560 video stream 27mhz ASK
Ba 33 bco

Abstract: No abstract text available
Text: NN5216 4 0 5 / NN5216805 series CMOS 16Mbit (2,097,152 words x 4 bits x 2 banks) CMOS 16Mbit (1 , SEMICONDUCTOR CORPORATION JUL.1997 NNS216405/ NN5216805 series Preliminary CMOS 16Mbit (2,097,152/1,048 , ^OOSbSQ OOQISflfl ART NN a P)< 786 Preliminary NN5216405/ NN5216805 series CMOS 16Mbit (2,097 , )( NNS21640S / NN5216805 series Preliminary CMOS 16Mbit (2,097,152/1,048,576 words x 4/8 bits * 2 banks , 0001ST0 44fl n n p )< X 788 Preliminary NN5216405/ NN5216805 series CMOS 16Mbit (2,097,152


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PDF NN5216 NN5216805 16Mbit NN5216405) NN5216805) 0QQlb27 NN5216405/ Ba 33 bco
DT28F016SV080

Abstract: No abstract text available
Text: in t e i 16-MBIT Flash FileTM MEMORY 28F016SV Includes Commercial and Extended Temperature , Intel's 28F016SV 16-Mbit FlashFileTM memory is a revolutionary architecture which is the ideal choice , the 28F008SA 8 -Mbit and 28F016SA 16-Mbit FlashFile memories), extended cycling, flexible Vcc and VPP , device, Intel recommends using the 16-Mbit word-wide FlashFileTM memory. Reference Word-Wide FlashFileTM , this device, Intel recommends using the 16-Mbit Byte-Wide Smart 3 FlashFileTM memory. Reference


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PDF 16-MBIT 28F016SV 56-Lead 28F016SA 28F008SA AP-610 AB-62 DT28F016SV080
NEC uPD 688

Abstract: CQ-111
Text: UPD4516161G5-A13 UPD4516161G5-A15 Organization (word X bit X bank) 16Mbit Synchronous DRAM MAX. Clock , 1 6 x 2 50-pin Plastic TSOP(II) (400mil) 626 NEC Symbol CLK(input pin) 16Mbit , A5 A4 Vss 16Mbit Synchronous DRAM 400mil 44Pin 0.8mmTSOP(!l) Pin Identification Name AO to A , 25 24 23 Vss DQ7 VssQ DQ6 VccQ DQ5 VssQ DQ4 VccQ NC NC DQM CLK CKE NC A9 A8 A7 A6 A5 A4 Vss 16Mbit , VccQ DQ11 DQ10 VssQ DQ9 DQ8 VccQ NC UDQM CLK CKE NC A9 A8 A7 A6 A5 A4 Vss 16Mbit Synchronous DRAM


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PDF uPD4516421 uPD4516821 uPD4516161 UPD4516421, UPD4516821, 216-bit 152-word 576-word 288-word x16-bit NEC uPD 688 CQ-111
1998 - hyb39s16

Abstract: marking smd wmf CAY smd marking code
Text: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced , output data to a system clock. The chip is fabricated with SIEMENS'advanced 16MBit DRAM process , HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM Ordering Information Type Ordering Code Package , /160BT-8/-10 16MBit Synchronous DRAM Vdd NC Vssq DQ0 Vddq NC Vssq DQ1 Vddq NC NC WE CAS , 16MBit Synchronous DRAM Signal Pin Description Pin Type Signal Polarity Function CLK


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PDF HYB39S16400/800/160BT-8/-10 16MBit P-TSOPI-44 400mil PC100 hyb39s16 marking smd wmf CAY smd marking code
1999 - SMD MARKING CODE A12

Abstract: No abstract text available
Text: HYB 39S16160CT-5.5/-6/-7 16-MBit Synchronous DRAM 1M × 16-MBit Synchronous DRAM for High-Speed , 39S16160CT-5.5/-6/-7 16-MBit Synchronous DRAM Ordering Information Type Ordering Code Package , 09.99 HYB 39S16160CT-5.5/-6/-7 16-MBit Synchronous DRAM VDD DQ0 DQ1 VSSQ DQ2 DQ3 VDDQ , /-7 16-MBit Synchronous DRAM Signal Pin Description Pin Type Signal Polarity Function , same manner as on conventional DRAMs. 4 09.99 HYB 39S16160CT-5.5/-6/-7 16-MBit Synchronous


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PDF 39S16160CT-5 16-MBit Cycles/64 P-TSOPII-50 GPX05956 SMD MARKING CODE A12
809 npn

Abstract: NN5216805
Text: NN5216405/ NN5216805 series CMOS 16Mbit (2,097,152 words x 4 b its x 2 banks) CMOS 16Mbit (1,048 , 16Mbit (2,097,152/1,048,576 words x 4/8 bits x 2 banks) Synchronous Dynamic RAM FUNCTIONAL BLOCK , / NN5216805 series Preliminary CMOS 16Mbit (2,097,152/1,048,576 words x 4/8 bits * 2 banks) Synchronous , / NN5216805 series CMOS 16Mbit (2,097,152/1,048,576 words x 4/8 bits x 2 banks) Synchronous Dynamic RAM , N P N > a < NN5216405/ NN5216805 series Prelim inary CMOS 16Mbit (2,097,152/1,048,576 words x 4


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PDF NN5216405/ NN5216805 16Mbit NN5216405) NN5216805) 0Q01b27 809 npn
1998 - 4Mx1 sram

Abstract: HM51W17805 16Mx8 dram EDO HN29W16814 HB289016A4 HB286060A3 HB289048C4 TTP32 TFP-32 HB286008A3
Text: power HM5116100 16Mbit DRAM FPM 16Mx1 60; 70 - CP-26 4.5-5.5 not for new design HM5116160 16Mbit DRAM FPM 1Mx16 60; 70 - CP-42 TTP 50 4.5-5.5 not for new design HM5116400 16Mbit DRAM FPM 4Mx4 60; 70 - CP-26 TTP-26 4.5-5.5 not for new design HM5116405 16Mbit DRAM EDO 4Mx4 50; 60; 70 - CP-26 TTP 26 4.5-5.5 not for new design HM5117400 16Mbit DRAM FPM 4Mx4 60; 70 -


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PDF HB286008A3 ATA-68 HB286008C3 CF-50 HB286015A3 15Mbyte HB286015C3 4Mx1 sram HM51W17805 16Mx8 dram EDO HN29W16814 HB289016A4 HB286060A3 HB289048C4 TTP32 TFP-32 HB286008A3
KM4232W259

Abstract: No abstract text available
Text: Speed 60/70/80 50/60/70 50/60 8/10 7/8/10 A60/ A66 Dual port 4Mbit 8Mbit SG R A M 8Mbit 16Mbit RD RAM 16Mbit 18Mbit SDRAM 16Mbit 256K X 16 256K 256K X X 512KX 32 2Mx8 2M X 1M x 16 DRAM 16Mbit 512K 1 o 32 32 9 X Features F/F(EDO, 2W E) F/F(EDO, 2CAS) (EDO, 4BE) LVTTL, 2Bank , 16Mbit 512K x 32 3.3V 2:0.30V fl KM432D5131 #-G 100T Q FP E/S:2Q98 C/S:3Q98 Now


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PDF KM4216C256# KM4216C258# KM4232W259A# KM4132G271B# KM4132G512# KM48RC2# KM49RC2# KM416S1020C 16Mbit KM4232W259
1995 - schematic diagram of energy saving device

Abstract: cpu Intel 4004 990UW Intel 4004 computer schematics 80286 microprocessor 80286 internal architecture AP-600 8086 with eprom 80286 microprocessor specification intel 8080 1974
Text: document was published. The 28F016XS flash memory is a new member of the Intel 16-Mbit flash memory , operating modes for the following memory technologies: · 28F016XS flash memory (x16) · 16-Mbit DRAM (x16) · 4-Mbit SRAM (two x8) · 1-Mbit cache SRAM (two x8) · 16-Mbit paged mask ROM (x16) · 4-Mbit EPROM , ) 66.1 x 106 1x 44.3 x 106 1x 16-Mbit DRAM (x16) 33.3 x 106 0.50x 33.3 x 106 , 13.3 x 106 0.20x 9.5 x 106 0.21x 0.25x 106 0.21x 16-Mbit Paged Mask ROM (x16) 4


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PDF AP-600 28F016XSBased clock/30 schematic diagram of energy saving device cpu Intel 4004 990UW Intel 4004 computer schematics 80286 microprocessor 80286 internal architecture AP-600 8086 with eprom 80286 microprocessor specification intel 8080 1974
2001 - 298161

Abstract: 28F160C3 28F320C3 28F640C3 28F800C3 TE28F320C3TA100 TE28F320C3TC70
Text: iv -001 Original version 02 /08/01 -002 Added tWHWL/tEHEL Spec to Table 4, Write Timing Differences on 32-Mbit Density Minor text edits in Section 2.0, Device Identification, and Table 7, 16-Mbit , differences with respect to the 16-Mbit and 32-Mbit (the two common densities between the 0.18µm and 0.25µm , + Boot Block = TE28F320C3TC70 Also, for the 16-Mbit and 32-Mbit devices, when migrating from 0.25µm to , + Boot Block features improved access times of 70ns for both the 16-Mbit and 32-Mbit devices. Table 1


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PDF AP-730 28F800C3, 28F160C3, 28F320C3, 28F640C3 298161 28F160C3 28F320C3 28F800C3 TE28F320C3TA100 TE28F320C3TC70
1996 - DT28F016SV80

Abstract: DT28F016SV-80 28F008SA 28F016SA 28F016SV 28F016SV100 29054 28F016SV80
Text: E PRODUCT PREVIEW EXTENDED TEMPERATURE 28F016SV 16-MBIT (1 MBIT X 16, 2 MBIT X 8 , Intel's Extended Temperature 28F016SV 16-Mbit FlashFileTM memory is a revolutionary architecture which , symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit and 28F016SA 16-Mbit FlashFile chips , -041493 E EXTENDED TEMPERATURE 28F016SV 16-MBIT FlashFileTM MEMORY CONTENTS PAGE 1.0 INTRODUCTION , Information. 50 PRODUCT PREVIEW 3 EXTENDED TEMPERATURE 28F016SV 16-MBIT FlashFileTM


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PDF 28F016SV 16-MBIT 28F016SA, 28F008SA 28F008SA 56-Lead 28F016SA/28F016SV/28F016SXS/28F016XD AP-378 28F016SA AP-393 DT28F016SV80 DT28F016SV-80 28F016SA 28F016SV 28F016SV100 29054 28F016SV80
1996 - ibm T22

Abstract: IBM0316169C IBM0316809C 22TCK SDRAM 1996
Text: , SR. IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features · High Performance , synchronizes the output data to a system clock. The chip is fabricated with IBM's advanced 16Mbit single , this document. Page 1 of 100 IBM0316809C IBM0316409C IBM0316169C 16Mbit Synchronous DRAM , IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Input/Output Functional Description Symbol , IBM0316809C IBM0316409C IBM0316169C 16Mbit Synchronous DRAM Ordering Information Part Number Power


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PDF IBM0316409C IBM0316169C IBM0316809C IBM0316809C IBM0316169C 16Mbit ibm T22 22TCK SDRAM 1996
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