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3SAT1307A2 (1617014-4) TE Connectivity (1617014-4) 3SAT1307A2 = M5757/13-090
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ELM-1-090 datasheet (1)

Part Manufacturer Description Type PDF
ELM1-090 Bivar LEDs - Spacers, Standoffs, Optoelectronics, LED MT SR VERT Original PDF

ELM-1-090 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Transistor J182

Abstract: No abstract text available
Text: MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes input and output , CONDITIONS F = 1030, 1090 MHz Vcc = 50 Volts PW = Note 2 DF = Note 2 MIN TYP MAX 500 60 9.2 , 1030 1090 1150 Zsource (ohms) 1.90 – j1.60 2.10 – j1.61 2.26 – j1.82 Zsource Zload


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PDF MDS500L MDS500L Transistor J182
2008 - Transistor J182

Abstract: j182 j182 transistor J221 j182 ic j161 SN723 J160 MDS500L J1 TRANSISTOR
Text: MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes input and output , CONDITIONS F = 1030, 1090 MHz Vcc = 50 Volts PW = Note 2 DF = Note 2 MIN TYP MAX 500 60 9.2 , 1030 1090 1150 Zsource (ohms) 1.90 ­ j1.60 2.10 ­ j1.61 2.26 ­ j1.82 Zsource Zload (ohms


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PDF MDS500L MDS500L Transistor J182 j182 j182 transistor J221 j182 ic j161 SN723 J160 J1 TRANSISTOR
2008 - MDS60L

Abstract: 1030MHz-1090MHz
Text: MDS60L 60 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The MDS60L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes a double input prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a , = 1030, 1090 MHz Vcc = 50 Volts PW = Note 2 DF = Note 2 MIN TYP MAX 60 6 10 34 2


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PDF MDS60L MDS60L 56653X) 1030MHz 1090MHz 1030MHz-1090MHz
2009 - MDS60L

Abstract: MDS60 1090mhz 1030MHz-1090MHz
Text: MDS60L 60 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The MDS60L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes a double input prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a , = 1030, 1090 MHz Vcc = 50 Volts PW = Note 2 DF = Note 2 MIN TYP MAX 60 6 10 34 2


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PDF MDS60L MDS60L 56653X) 1030MHz 1090MHz MDS60 1090mhz 1030MHz-1090MHz
2008 - Not Available

Abstract: No abstract text available
Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the , Gain Collector Efficiency Pulse Droop Rise Time Load Mismatch TEST CONDITIONS F = 1030/ 1090 MHz , . MDS140L Typical Performance (1030/ 1090 MHz) Input/Output Gain 12.00 200.0 11.00 160.0 , Input Matching Network ZS Frequency (MHz) 1030 1090 Output Matching Network DUT ZS


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PDF MDS140L MDS140L
rt6010

Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 J345 25-mils 63v 2200uF MDS140L 200B 1030 PULSED 32uS MODE-S
Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the , Droop Rise Time Load Mismatch TEST CONDITIONS F = 1030/ 1090 MHz VCC = 50V Pin = 15.7W ELM Burst , site at www.microsemi.com or contact our factory direct. MDS140L Typical Performance (1030/ 1090 , ) 1030 1090 Output Matching Network DUT ZS () 3.13 ­ j4.53 2.58 ­ j3.45 ZL ZL


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PDF MDS140L MDS140L rt6010 2200uf, 63v electrolytic capacitor j453 transistor x 313 J345 25-mils 63v 2200uF 200B 1030 PULSED 32uS MODE-S
2013 - Not Available

Abstract: No abstract text available
Text: to 1090 MHz, 32 μs Pulse, 2% Duty Features Rev. V3 MAGX-001090-600L00  GaN on SiC , -001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev , 1090 4.50 21.3 18.6 64.4 -11.0 0.23 661 S P Electrical Specifications: Freq. = 1030 - 1090 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max , -001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse


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PDF MAGX-001090-600L00 MAGX-001090-600L0S MAGX-001090-600L00
2014 - Not Available

Abstract: No abstract text available
Text: to 1090 MHz, 32 μs Pulse, 2% Duty Features Rev. V4 MAGX-001090-600L00  GaN on SiC , -001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev , 1090 4.50 21.3 18.6 64.4 -11.0 0.23 661 S P Electrical Specifications: Freq. = 1030 - 1090 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max , -001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse


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PDF MAGX-001090-600L00 MAGX-001090-600L0S MAGX-001090-600L00
N48 transistor

Abstract: No abstract text available
Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the , F = 1030/ 1090 MHz VCC = 50V Pin = 15.7W ELM Burst: 32us(On), 18us(Off), N=48, Period , . MDS140L Typical Performance (1030/ 1090 MHz) Input/Output Gain 12.00 200.0 11.00 160.0 , ZS Frequency (MHz) 1030 1090 Output Matching Network DUT ZS (Ω) 3.13 – j4


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PDF MDS140L MDS140L N48 transistor
2014 - Not Available

Abstract: No abstract text available
Text: to 1090 MHz, 32 μs Pulse, 2% Duty Features Rev. V5 MAGX-001090-600L00  GaN on SiC , -001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse , 1090 4.50 21.3 18.6 64.4 -11.0 0.23 661 S P Electrical Specifications: Freq. = 1030 - 1090 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max , Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V5 Absolute Maximum Ratings2,3,4,5


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PDF MAGX-001090-600L00 MAGX-001090-600L0S MAGX-001090-600L00
2013 - transistor+2146

Abstract: No abstract text available
Text: 704 0.962 -11.2 72.1 21.48 0.2 1090 MHz 5 696 0.931 -23.2 73.7


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PDF MDS-GN-650 MDS-GN-650ELM 55-KR MDS-GN-650ELM 55-KR transistor+2146
2004 - transistor A 1030

Abstract: 1030 PULSED
Text: MDS550L 550 Watts, 45 Volts Pulsed Avionics at 1030/ 1090 MHz PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The MDS550L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 and 1090 MHz, with the pulse width and duty required for MODE-S ELM (extended length message) applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The , , F = 1030/ 1090 MHz, Note 1 F = 1030 MHz, Vcc = 45 Volts -12 100 1.0 3.0:1 MIN 550 9.0 45 TYP MAX


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PDF MDS550L MDS550L 55ST-1 transistor A 1030 1030 PULSED
2007 - MDS500L

Abstract: 1030 PULSED 32uS MODE-S .400 x .500
Text: MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 / 1090 MHz frequency band. The transistor includes input prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a , c Collector Efficiency VSWR Pd F = 1030, 1090 MHz Vcc = 50 Volts PW = Note 2 DF = Note


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PDF MDS500L MDS500L 1030 PULSED 32uS MODE-S .400 x .500
2008 - Bd 585 transistor

Abstract: No abstract text available
Text: Part Number: Integra IB1011L220 (Preliminary) TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L220 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S – ELM pulse burst conditions at VCC = 48V, this common base device supplies a minimum of 220 watts of peak pulse power. It utilizes a


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PDF IB1011L220 IB1011L220 IB1011L220-REV-PR1-DS-REV-NC Bd 585 transistor
T774-M

Abstract: 10GPC T774-LN LED surface mounted TP10J
Text: Forward Voltage Reverse Current Capacitance Switching Times, ly 10%-90 % Co fR Symbol *f>EAK *OOM AX 2< p


OCR Scan
PDF TA-25 G30/FR4 100mA, 10jis, T774-KM T774-L T774-M T774-LN OHL01698. OHLOI66O 10GPC LED surface mounted TP10J
Not Available

Abstract: No abstract text available
Text: 4.10 [0.161] TYPICAL 10.90 [0.429] TYPICAL S IZE 12 f t DECIMAL TOL ± 0 .3 8 [0.0151


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PDF SK3846
2009 - Not Available

Abstract: No abstract text available
Text: Part Number: Integra IB1011L110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L110 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S – ELM pulse burst conditions at VCC = 48V, this common base device supplies a minimum of 110 watts of peak pulse power. It utilizes a low loss internal input


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PDF IB1011L110 IB1011L110 IB1011L110-REV-NC-DS-REV-B
2010 - J122 SMD TRANSISTOR

Abstract: 800B MHz-2 BLA6H0912-500
Text: corresponding to VSWR = 10 : 1 through all phases under the following conditions: f = 960 MHz, 1030 MHz, 1090 , MHz 960 1.36 - j1.45 1.49 - j1.48 1030 1.54 - j1.25 1.51 - j1.45 1090 , 1030 MHz (2) f = 1030 MHz (3) f = 1090 MHz (3) f = 1090 MHz (4) f = 1140 MHz (4) f = , ; = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz


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PDF BLA6H0912-500 BLA6H0912-500 J122 SMD TRANSISTOR 800B MHz-2
2010 - BLA6H0912

Abstract: power amplifier NXP 800B 1030 mhz power tr unit j122 transistor j147 1140MHz J122 SMD TRANSISTOR
Text: corresponding to VSWR = 10 : 1 through all phases under the following conditions: f = 960 MHz, 1030 MHz, 1090 , MHz 960 1.36 - j1.45 1.49 - j1.48 1030 1.54 - j1.25 1.51 - j1.45 1090 , ) f = 960 MHz (1) f = 960 MHz (2) f = 1030 MHz (2) f = 1030 MHz (3) f = 1090 MHz (3) f = 1090 MHz (4) f = 1140 MHz (4) f = 1140 MHz (5) f = 1215 MHz (5) f = 1215 MHz Fig 2 , ) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz Fig 4. Drain efficiency as a function of load


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PDF BLA6H0912-500 BLA6H0912-500 BLA6H0912 power amplifier NXP 800B 1030 mhz power tr unit j122 transistor j147 1140MHz J122 SMD TRANSISTOR
2010 - Not Available

Abstract: No abstract text available
Text: all phases under the following conditions: f = 960 MHz, 1030 MHz, 1090 MHz or 1215 MHz. VDS = 50 V , 1.36 − j1.45 1.49 − j1.48 1030 1.54 − j1.25 1.51 − j1.45 1090 1.67 − j1 , MHz (1) f = 960 MHz (2) f = 1030 MHz (2) f = 1030 MHz (3) f = 1090 MHz (3) f = 1090 MHz , MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz Fig 4. Drain efficiency as a function


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PDF BLA6H0912-500 BLA6H0912-500
2001 - 2E1000

Abstract: E1000
Text: 2000 Package Details Dimensions in mm (inches). 27.69 ( 1.090 ) Sq. Max. 2.54 (0.100) typ


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PDF 2E1000 32Kx32, 64Kx16 128Kx8. 250ns MIL-STD-883 E1000 E1000
2010 - POWER TRANSISTOR

Abstract: BLA6H0912-500
Text: under the following conditions: f = 960 MHz, 1030 MHz, 1090 MHz or 1215 MHz. VDS = 50 V; IDq = 100 mA , values per section unless otherwise specified. f MHz 960 1030 1090 1140 1215 ZS 1.36 - j1.45 1.54 - j1 , 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz VDS = 50 V; IDq = 100 mA; tp = 128 s; = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz Fig 3. Load power as , = 50 V; IDq = 100 mA; tp = 128 s; = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f =


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PDF BLA6H0912-500 BLA6H0912-500 POWER TRANSISTOR
2000 - D3157

Abstract: 2E1000MB D2860 D1425 NE29
Text: 4.0 : January 2000 Package Details Dimensions in mm (inches). 27.69 ( 1.090 ) Sq. Max. 4.83


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PDF 2E1000 32Kx32, 64Kx16 128Kx8. 250ns MIL-STD-883 2E1000MB E1000 D3157 D2860 D1425 NE29
2010 - Not Available

Abstract: No abstract text available
Text: and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF , ) (%) (ns) (ns) 1030 to 1090 48 600 17 52 11 5 CAUTION This device is , . 1.2 Features and benefits ̈ Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a , stability ̈ Designed for broadband operation (1030 MHz to 1090 MHz) ̈ Internally matched for ease of use , pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz frequency


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PDF BLA6H1011-600 BLA6H1011-600
2010 - 702 TRANSISTOR smd

Abstract: BLA6H1011-600 200B 800B
Text: applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = , ) (ns) 1030 to 1090 48 600 17 52 11 5 CAUTION This device is sensitive to , and benefits Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage , operation (1030 MHz to 1090 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC , IFF applications in the 1030 MHz to 1090 MHz frequency range 2. Pinning information Table 2


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PDF BLA6H1011-600 BLA6H1011-600 702 TRANSISTOR smd 200B 800B
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