The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC327A Linear Technology 3.3V Micropower EIA/TIA-562 Transceiver
LTC1385CSW Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SO; Pins: 18; Temperature Range: 0°C to 70°C
LTC1386CS#PBF Linear Technology LTC1386 - 3.3V Low Power EIA/TIA562 Transceiver; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1386CS#TRPBF Linear Technology LTC1386 - 3.3V Low Power EIA/TIA562 Transceiver; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1385CSW#TR Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SO; Pins: 18; Temperature Range: 0°C to 70°C
LTC1385ISW Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SO; Pins: 18; Temperature Range: -40°C to 85°C

EIA-364-03 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - Not Available

Abstract: No abstract text available
Text: ¼ maximum EIA-364-03 EIA-364-10 EIA-364-54 Mating Force [(# of size 8 contacts) X 5.0] + [(# of


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PDF EIA-364-20 EIA-364-21 IA-364-27 EIA-364-32 EIA-364-31 EIA-364-26 EIA-364-03 EIA-364-10 EIA-364-54 EIA-364-13
2013 - EIA-364-20

Abstract: No abstract text available
Text: -364-27 EIA-364-32 EIA-364-31 EIA-364-03 EIA-364-10 EIA-364-54 EIA-364-09 © 2013 Glenair, Inc â


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PDF D-5948 EIA-364-06 EIA-364-23 EIA-364-83 EIA-364-66 MIL-STD-810F IEC-60529 EIA-364-28 EIA-364-27 EIA-364-20
2012 - Performance Specifications

Abstract: No abstract text available
Text: dielectric withstanding voltage. EIA-364-03 Wired connectors with supplemental potting. Contact


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PDF EIA-364-20 IEC-60512-4-1 EIA-364-70 IEC-60512-5 1000MHz, EIA-364-29 AS39029 EIA-364-13 EIA-364-54 Performance Specifications
2013 - EIA-364-31 method iv

Abstract: EIA-364-35 IEC-60512-5 test 9a EIA-364-31
Text: moisture on connector interface or contacts. Connector shall meet dielectric withstanding voltage. EIA-364-03


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PDF D-5948 EIA-364-13 EIA-364-54 EIA-364-35 EIA-364-31 method iv EIA-364-35 IEC-60512-5 test 9a EIA-364-31
2010 - IEC-60512-4-1

Abstract: IEC-60512-5 AS39029 EIA-364-83 EIA-365-35 EIA-365-02 EIA-364-20 EIA-364-66 IEC-60512-1-1 EIA-364-29
Text: -364-10 Unmated connectors EIA-364-03 L M 90-95% RH 40° C Apply 100 volts DC during test. 4 hours


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PDF AS39029 EIA-364-06 EIA-364-23 EIA-364-10 EIA-364-03 ASTM-E595 01-JANUARY-2010 IEC-60512-4-1 IEC-60512-5 EIA-364-83 EIA-365-35 EIA-365-02 EIA-364-20 EIA-364-66 IEC-60512-1-1 EIA-364-29
2009 - EIA-364-31

Abstract: IEC-60512-5 IEC-60512-6-4 EIA-364-03 IEC-60512-3-1 AS39029 EIA-364-10 IEC-60512-6 IEC-60512-23-3 IEC-60512-11-4
Text: . Connector shall meet dielectric withstanding voltage. EIA-364-03 Wired connectors with supplemental


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PDF 04-July-2009 EIA-364-31 IEC-60512-5 IEC-60512-6-4 EIA-364-03 IEC-60512-3-1 AS39029 EIA-364-10 IEC-60512-6 IEC-60512-23-3 IEC-60512-11-4
2015 - Not Available

Abstract: No abstract text available
Text: Technical Reference Series 970 Connectors and Accessories Technical Reference Product Specification DESCRIPTION REQUIREMENT PROCEDURE Altitude Immersion No evidence of moisture on connector interface or contacts. At the end of the third cycle, while still submersed, connectors shall meet 2000 Vac dielectric withstanding voltage and 1,000 megohms insulation resistance. EIA-364-03 Simulated 75,000 feet altitude Altitude- Low Temperature Insulation resistance greater than 5,000


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PDF EIA-364-03 EIA-364-105 MIL-DTL-38999 EIA-364-28 MIL-DTL-38999L MIL-STD-810F
2015 - stub ACME torque

Abstract: IEC-60512-6
Text: or contacts. Connector shall meet dielectric withstanding voltage. EIA-364-03 ASTM E595


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PDF EIA-364-10 EIA-364-03 ASTM-E595 stub ACME torque IEC-60512-6
upd 6360

Abstract: ic 6 yo uPDI7246MC
Text: ] 1 3.6394 3.6437 -.0044 2 3.6318 3.6368 -.0051 3 3.6349 3.6403 -.0054 4 3.6360 3.6422 -.0062 5


OCR Scan
PDF uPD17246MC 64MC5 uPDI7246MC upd 6360 ic 6 yo
1999 - 2SB1570

Abstract: 2SD2401
Text: V ­150 VEBO Tstg 6.0±0.2 36.4±0.3 IC=­30mA VCEO C External Dimensions MT


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PDF 2SB1570 2SD2401) 100max 150min 5000min 50typ 230typ 2SB1570 2SD2401
1999 - 2SD2401

Abstract: 2SB1570
Text: V 12 24.4±0.2 21.4±0.3 5 IC 6.0±0.2 36.4±0.3 4.0max VEBO Tstg Safe


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PDF 2SD2401 2SB1570) MT-200 100max 150min 5000min 55typ 2SD2401 2SB1570
2007 - 2SC2922

Abstract: 2SA1216 IC-25 DSA0016507
Text: FE 6.0±0.2 36.4±0.3 80 40 5 0 Without Heatsink 0 25 50 75 100 125


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PDF 2SC2922 2SA1216) MT-200 100max 180min 50typ 250typ 30min 2SC2922 2SA1216 IC-25 DSA0016507
1999 - 2SA1295

Abstract: 2SC3264
Text: 2SA1295 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) sAbsolute maximum ratings Symbol sElectrical Characteristics (Ta=25°C) External Dimensions MT-200 (Ta=25°C) Unit ­230 Symbol V Conditions 2SA1295 Unit ICBO 2SA1295 VCBO Application : Audio and General VCB=­230V ­100max µA 36.4±0.3 24.4±0.2 VEB=­5V ­100max µA IC=­25mA ­230min V VCEO ­230 V IEBO VEBO ­5 V V(BR)CEO IC ­17 A hFE VCE


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PDF 2SA1295 2SC3264) MT-200 100max 230min 50min 35typ 2SA1295 2SC3264
2007 - 2SA1295

Abstract: 2SC3264 DSA0016502
Text: 2SA1295 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) sAbsolute maximum ratings Symbol sElectrical Characteristics (Ta=25°C) External Dimensions MT-200 (Ta=25°C) Unit ­230 Symbol V Conditions Ratings Unit ICBO Ratings VCBO Application : Audio and General VCB=­230V ­100max µA 36.4±0.3 24.4±0.2 VEB=­5V ­100max µA IC=­25mA ­230min V VCEO ­230 V IEBO VEBO ­5 V V(BR)CEO IC ­17 A hFE VCE


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PDF 2SA1295 2SC3264) MT-200 100max 230min 50min 35typ 500typ 2SA1295 2SC3264 DSA0016502
1999 - 2SC2921

Abstract: 2SA1215 transistor 2SC2921 2sc2921 sanken
Text: 2SC2921 LAPT Application : Audio and General Purpose Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) sAbsolute maximum ratings Symbol sElectrical Characteristics (Ta=25°C) 2SC2921 160 V VCBO 2SC2921 Unit VCB=160V ICBO External Dimensions MT-200 (Ta=25°C) Conditions Symbol Unit 100max µA VEB=5V 100max 160min 24.4±0.2 µA IC=25mA 6.0±0.2 36.4±0.3 2.1 V V(BR)CEO IC 15 A hFE VCE


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PDF 2SC2921 2SA1215) MT-200 100max 160min 50min 60typ 2SC2921 2SA1215 transistor 2SC2921 2sc2921 sanken
2007 - 2SA1215

Abstract: transistor 2SA1215 2SC2921 DSA0016502
Text: 2SA1215 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit ­160 V VCBO Application : Audio and General Purpose External Dimensions MT-200 (Ta=25°C) Conditions ICBO Ratings Unit VCB=­160V Symbol ­100max µA 36.4±0.3 24.4±0.2 VEB=­5V ­100max µA IC=­25mA ­160min V VCEO ­160 V IEBO VEBO ­5 V V(BR)CEO


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PDF 2SA1215 2SC2921) MT-200 100max 160min 50min 50typ 400typ 2SA1215 transistor 2SA1215 2SC2921 DSA0016502
2007 - 2sb1648

Abstract: 2SD2561 DSA0016506
Text: ( 7 0 ) E 2SB1648 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) V Conditions Ratings Unit VCB=­150V Symbol ICBO ­100max µA 36.4±0.3 24.4±0.2 VEB=­5V A A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C ­2.5max V ­3.0max V 45typ MHz hFE ­1 5000min VCE=­12V, IE=2A ­17 IB V V(BR)CEO IC µA IEBO V ­150min IC=­10A, IB=­10mA V ­5 ­100max VCE=­4V, IC


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PDF 2SB1648 2SD2561) 100max 45typ 5000min 150min 320typ MT-200 2sb1648 2SD2561 DSA0016506
1999 - 2SC2922

Abstract: transistor 2sc2922 2SA1216 2sc2922 safe operating area
Text: FE 6.0±0.2 36.4±0.3 80 40 5 0 Without Heatsink 0 25 50 75 100 125


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PDF 2SC2922 2SA1216) MT-200 100max 180min 50typ 250typ 2SC2922 transistor 2sc2922 2SA1216 2sc2922 safe operating area
1999 - 2sa1494

Abstract: 2SC3858 30C50 transistor 2sa1494
Text: 2SA1494 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol 2SA1494 ­200 V External Dimensions MT-200 (Ta=25°C) Conditions ICBO 2SA1494 Unit VCB=­200V Symbol Unit VCBO Application : Audio and General Purpose ­100max µA 36.4±0.3 24.4±0.2 VEB=­6V ­100max µA IC=­50mA ­200min V VCEO ­200 V IEBO VEBO ­6 V V(BR)CEO IC ­17


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PDF 2SA1494 2SC3858) MT-200 100max 200min 50min 20typ 2sa1494 2SC3858 30C50 transistor 2sa1494
1999 - transistor 2sc3858

Abstract: 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area
Text: 24.4±0.2 21.4±0.3 VEBO 6.0±0.2 36.4±0.3 4.0max sAbsolute maximum ratings (Ta


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PDF 2SC3858 2SA1494) 100max 200min MT-200 50min 20typ transistor 2sc3858 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area
2007 - 2SC3858

Abstract: 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508
Text: Fre quen cy f T ( MH Z ) 6.0±0.2 36.4±0.3 4.0max sAbsolute maximum ratings (Ta


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PDF 2SC3858 2SA1494) 100max MT-200 200min 50min 20typ 300typ 2SC3858 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508
1999 - 2SC3857

Abstract: 2SA1493
Text: 6.0±0.2 36.4±0.3 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient


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PDF 2SC3857 2SA1493) MT-200 100max 200min 50min 20typ 2SC3857 2SA1493
2007 - 2SA1493

Abstract: 2SC3857 DSA0016503
Text: 20.0min PC 2-ø3.2±0.1 7 ­200 VEBO 24.4±0.2 21.4±0.3 VCEO 6.0±0.2 36.4±0.3


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PDF 2SA1493 2SC3857) MT-200 100max 200min 50min 20typ 400typ 2SA1493 2SC3857 DSA0016503
1999 - 2SA1216

Abstract: 2sc2922 safe operating area transistor 2SA1216 2SC2922 2sa1216 transistor general purpose sanken power transistor 2SA1216
Text: F E 6.0±0.2 36.4±0.3 80 40 5 0 Without Heatsink 0 25 50 75 100


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PDF 2SA1216 2SC2922) MT-200 100max 180min 30min 40typ 2SA1216 2sc2922 safe operating area transistor 2SA1216 2SC2922 2sa1216 transistor general purpose sanken power transistor 2SA1216
1999 - 2SC3857

Abstract: 2SA1493 MT20
Text: -ø3.2±0.1 7 ­200 VEBO 24.4±0.2 21.4±0.3 VCEO 6.0±0.2 36.4±0.3 µA 3 5.45±0.1 B


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PDF 2SA1493 2SC3857) MT-200 100max 200min 50min 20typ 2SC3857 2SA1493 MT20
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