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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC2864HDD-1#PBF Linear Technology LTC2864 - ±60V Fault Protected 3V to 5.5V RS485/RS422 Transceivers; Package: DFN; Pins: 10; Temperature Range: -40°C to 125°C
LTC2864IDD-2#PBF Linear Technology LTC2864 - ±60V Fault Protected 3V to 5.5V RS485/RS422 Transceivers; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LTC2864CS-2#TRPBF Linear Technology LTC2864 - ±60V Fault Protected 3V to 5.5V RS485/RS422 Transceivers; Package: SO; Pins: 14; Temperature Range: 0°C to 70°C
LTC2864IDD-1#TRPBF Linear Technology LTC2864 - ±60V Fault Protected 3V to 5.5V RS485/RS422 Transceivers; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LTC2864CDD-1#PBF Linear Technology LTC2864 - ±60V Fault Protected 3V to 5.5V RS485/RS422 Transceivers; Package: DFN; Pins: 10; Temperature Range: 0°C to 70°C
LTC2864HDD-2#PBF Linear Technology LTC2864 - ±60V Fault Protected 3V to 5.5V RS485/RS422 Transceivers; Package: DFN; Pins: 10; Temperature Range: -40°C to 125°C

EEPROM 2864 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1992 - EEPROM 2864

Abstract: EPROM 27020 EEPROM 28256 27E020 28pC64 28c64 EEPROM 2864 INTEL 27C040Q EPROM 27256 eeprom 27C040 intel 27512 eprom
Text: (27020) 256K 27C040 EPROM (27040) 512K 27C080 EPROM (27080) 1M EEPROM 2864 EEPROM ( 2864 ) 8K DATA : 8BIT 28512 EEPROM (28256) 32K FLASH ROM 29512 FLASH , only EPROM. But EeRom-8U ROM Emulator can emulate many types of memories (EPROM, Flash-ROM, EEPROM , , 27LV080 2864 8K 2864A/AE/B/BE, 28C64/A/AX, 28HC64/B, 28PC64/E, 28BV64, 28LV64/B 28256 32K


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PDF ADP32: 32-PLCC 32-DIP ADP28: 28-DIP EEPROM 2864 EPROM 27020 EEPROM 28256 27E020 28pC64 28c64 EEPROM 2864 INTEL 27C040Q EPROM 27256 eeprom 27C040 intel 27512 eprom
1992 - EEPROM 2864

Abstract: eeprom 27C020 2864A 27C512 eprom EEPROM 28256 27C128 27C040 27C512 27C64 27h256
Text: 27C040 EPROM (27040) 512K 27C080 EPROM (27080) 1M EEPROM 2864 EEPROM ( 2864 ) 8K DATA : 8BIT 28512 EEPROM (28256) 32K FLASH ROM 29512 FLASH (29512) 64K DATA , EPROM. But EeRom-8U ROM Emulator can emulate many types of memories (EPROM, Flash-ROM, EEPROM , NVRAM , 27040 512K 27040, 27C040/Q, 27BV040, 27LV040 27080 1M 27C080, 27LV080 2864 8K


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PDF ADP32: 32-PLCC 32-DIP 28-DIP EEPROM 2864 eeprom 27C020 2864A 27C512 eprom EEPROM 28256 27C128 27C040 27C512 27C64 27h256
2004 - EEPROM 2864

Abstract: 2864 eeprom Ram 2864 EEPROM 27128 eeprom 2864a TBA 129 2864a 2864 EEPROM 28 PINS MAX232 MC68HC11A1FN
Text: . Figure 4 shows the hardware needed to interface the M68HC11 to an external 2864 EEPROM , which provides a , 2864 involves fewer operations than are needed for internal EEPROM , as the former has no equivalent of , 2864 with a 27128 16-Kbyte EEPROM memory. An important outcome of this is that, when a 2864 is used , 39 41 42 40 38 37 36 35 33 32 31 30 Figure 4. MC68HC11A8 Emulator Using 2864 EEPROM , * either a 2864 external EEPROM on the 68HC11 external bus, * 9 A * or to the 68HC11's internal


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PDF AN1010/D M68HC11 EEPROM 2864 2864 eeprom Ram 2864 EEPROM 27128 eeprom 2864a TBA 129 2864a 2864 EEPROM 28 PINS MAX232 MC68HC11A1FN
EEPROM 2864

Abstract: 2864 eeprom 2864 2864H-250 2864H 2864H-300 2864 memory 2864 dip
Text: Technology, Incorporated 2864 /2864H Timer E2 64K Electrically Erasable PROMs _August 1992 , U MIL-STD-883 Class B Compliant SMD 5962 Compliant Description SEEQ's 2864 is a 5 V only, 8K x 8 NMOS electrically erasable programmable read only memory ( EEPROM ). It is packaged in most popular thru , =c> packages and has a ready/busy pin. This EEPROM is ideal for applications which require , , is a minimum of 10 thousand cycles. The EEPROM has an internal timer that automatically times out


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PDF 2864/2864H 2864H) MIL-STD-883 MD400100/A MD400100/A EEPROM 2864 2864 eeprom 2864 2864H-250 2864H 2864H-300 2864 memory 2864 dip
1988 - EEPROM 2864

Abstract: bytek 2864 eeprom 2864A MC68HC11A1FN d703 MC68HC24FN motorola an1010 27128 memory maxim max 1987
Text: external 2864 EEPROM , which provides a total of 8 Kbytes of reprogrammable memory. The addition of the , 16-Kbyte EEPROM memory. An important outcome of this is that, when a 2864 is used, the memory range , A10 23 A11 2 A12 26 A13 VSS VSS 14 11 Figure 4. MC68HC11A8 Emulator Using 2864 EEPROM VDD , host to * 8 A * either a 2864 external EEPROM on the 68HC11 external bus, * 9 A * or to the , EEPROM Programming from a Personal Computer Introduction This application note describes a simple and


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PDF AN1010/D AN1010 MC68HC11 MC68HC11 EEPROM 2864 bytek 2864 eeprom 2864A MC68HC11A1FN d703 MC68HC24FN motorola an1010 27128 memory maxim max 1987
1988 - 2864 EEPROM 28 PINS

Abstract: EEPROM 2864 EEPROM 27128 2864 eeprom M68HC11A8 TBA 129 eeprom 2864a MC68HC24FN ic tba 810 datasheet MC68HC11A1FN
Text: needed to interface the M68HC11 to an external 2864 EEPROM , which provides a total of 8 Kbytes of , by the 2864 , its inclusion permits the replacement of the 2864 with a 27128 16-Kbyte EEPROM memory , 36 35 33 32 31 30 Figure 4. MC68HC11A8 Emulator Using 2864 EEPROM PORT E PA0 PA1 PA2 , * either a 2864 external EEPROM on the 68HC11 external bus, * 9 A * or to the 68HC11's internal , Semiconductor, Inc. M68HC11 EEPROM Programming from a Personal Computer Introduction This application


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PDF AN1010/D M68HC11 2864 EEPROM 28 PINS EEPROM 2864 EEPROM 27128 2864 eeprom M68HC11A8 TBA 129 eeprom 2864a MC68HC24FN ic tba 810 datasheet MC68HC11A1FN
1988 - TBA 129

Abstract: EEPROM 2864 2864 EEPROM 28 PINS motorola an1010 2864 eeprom eeprom 2864a TBA129 mc68hc24fn M68HC11A8 EEPROM 27128
Text: external 2864 EEPROM , which provides a total of 8 Kbytes of reprogrammable memory. The addition of the , inclusion permits the replacement of the 2864 with a 27128 16-Kbyte EEPROM memory. An important outcome of , Emulator Using 2864 EEPROM 27 26 25 24 22 21 20 19 } STRA 7 STRB 18 PC0 PC1 PC2 PC3 , * either a 2864 external EEPROM on the 68HC11 external bus, * 9 A * or to the 68HC11's internal , Application Note AN1010/D Rev. 1, 5/2002 M68HC11 EEPROM Programming from a Personal Computer


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PDF AN1010/D M68HC11 RS232 TBA 129 EEPROM 2864 2864 EEPROM 28 PINS motorola an1010 2864 eeprom eeprom 2864a TBA129 mc68hc24fn M68HC11A8 EEPROM 27128
EEPROM 2864

Abstract: 2864H-250 2864 memory 2864-300 2864 dip 2864H-300
Text: 2864 /2864H T e c h n o lo g y , In c o rp o ra te d _ , SMD 5962 Compliant packages and has a ready/busy pin. This EEPROM is ideal for applications which , be written, is a minimum of 10 thousand cycles. The EEPROM has an internal timer that automatically , wi 26 NC 25 J 24 S 23 *· c 4 Aa a9 Description SEEQ's 2864 is a 5 V only, 8K x 8 NMOS electrically erasable programmable read only memory ( EEPROM ). It is packaged in most popular thru hole and


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PDF 2864/2864H 2864H) MIL-STD-883 MD400100/A EEPROM 2864 2864H-250 2864 memory 2864-300 2864 dip 2864H-300
2864 EEPROM 28 PINS

Abstract: EEPROM 2864 Ram 2864 SCSR 118 8D0C 5Bp cms EEPROM 27128 mc68hc11a 2864 eeprom D803
Text: the 2864 , its inclusion per mits the replacement of the 2864 with a 27128 16K byte EEPROM memory. An , PROGRAMMING EXTERNAL EEPROM Figure 4 shows the hardware needed to interface the MC68HC11 to an external 2864 , . * * This program loads S records from the host to * either a 2864 external EEPROM on the 68HC11 external , EEPROM Programming from a Personal Computer This application note describes a simple and reliable method of programming either the MC68HC11's internal EEPROM , or EEPROM connected to the M C U's external bus


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PDF AN1010/D AN1010 MC68HC11 RS232 A23405 2864 EEPROM 28 PINS EEPROM 2864 Ram 2864 SCSR 118 8D0C 5Bp cms EEPROM 27128 mc68hc11a 2864 eeprom D803
Not Available

Abstract: No abstract text available
Text: 2864 /2864H Timer E2 64K Electrically Erasable PROMs November 1989 Features ■■H igh , utom atic B yte E rase Before Byte Write • 2 m s B yte W rite (2864H) The EEPROM has an internal , , are latched by the falling edge o f the write enable signal. Description SEEQ’s 2864 is a 5 V only, 8K x 8 NMOS electrically erasable programmable read only memory ( EEPROM ). It is packaged in a 28 pin package and has a ready/busy pin. This EEPROM is ideal for applications which require nonÂ


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PDF 2864/2864H 2864H) 2864H MD400002/B
IC 2864 eeprom

Abstract: 2864 EEPROM 28 PINS 2864-250 eeprom 2864 2864 memory
Text: 2864 /2864H Timer P 64K Electrically Erasable PROMs November 1989 Features Ready/Busy Pin High , EEPROM has an internal timer that automatically times out the write time. The on-chip timer, along with , Temperature Range Available Description SEEQ's 2864 is a 5 V only, 8K x 8 NMOS electrically erasable programmable read only memory ( EEPROM ). It is packaged in a 28 pin package and has a ready/busy pin. This EEPROM is ideal for applications which require non volatility and in-system data modification. The


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PDF 2864/2864H 2864H MD400002/B 2864/2864H IC 2864 eeprom 2864 EEPROM 28 PINS 2864-250 eeprom 2864 2864 memory
2004 - 9s08gb60

Abstract: EEPROM 2864 908AB32 MC3PHAC 908lj12 908lk24 908GZ L908QY4 9s08 908QY1
Text: -bitA/D, Up to 2-SCI, SPI, PLL or ICG, 28-64 pins 908AB Family 908AP64 908AP32 10-bitA/D, 2-SCI, SPI, IIC, ICG, 28-64 pins 12 ch, 8-bit A/D, 20-48 pins 908GT16 908GP32A 908GR60A 908GT8 General Purpose 4K-60K Flash 908GR16 908GR8 908GR4 Flash and EEPROM 908GR8A Gen , , SCI, A/D, PLL, 28-64 pins A/D, USB, SCI, 52-64 pins 908EY Family 10 bit A/D, ESCI, SPI, 32 pin


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PDF 9S08GB60 9S08GT60 9S08G 10-bitA/D, 20MHz 16-bit 9S08R 9S08GB32 9S08GT32 9S08RG60 9s08gb60 EEPROM 2864 908AB32 MC3PHAC 908lj12 908lk24 908GZ L908QY4 9s08 908QY1
2864 EEPROM 28 PINS

Abstract: m2864 2864H eeprom 2064
Text: 64K E E P R O M · M ilitary Tem perature M 2864 · E xtended Tem perature E 2864 R ead/Busy Pin H igh E , number o f times which a byte may be written, is a minimum o f 10 thousand cycles. The EEPROM has an , memory ( EEPROM ). It Is packaged in a 28 pin package and has aready/busy pin. This EEPROM is ideal (or , 6-36 M2864/M2864H E2864/E2864H Write Cycle Timing 'OES Ordering Information D D E M 2064 2864 , (MILÍTARY) E - 4 0 " C to +85° C (EXTENDED) TT ^ EEPROM BYTE WRITE TIME ACCESS TIME SCREENING OPTION


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PDF M2864/M2864H E2864/E2864H 2864H) MD400003/B 2864 EEPROM 28 PINS m2864 2864H eeprom 2064
2864 eeprom

Abstract: EEPROM 2864 Ram 2864 2764 EPROM 2864 EPROM 2764 EEPROM 2864 RAM nv sram 8 pin 2764 eprom PINOUT EEPROM 2864 CMOS
Text: -pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or the 2864 EEPROM , allowing , DS1225Y SEMICONDUCTOR DALLAS DS1225Y 6 4 K Nonvolatile SRAM FEATURES · 10 years minimum data retention in the absence of external power · Data is automatically protected during power loss · Directly replaces 8K x 8 volatile static RAM or EEPROM · Unlimited write cycles · Low-power CMOS · JEDEC standard 28-pin DIP package · Read and write access times as fast as 150 ns · Full ±10%


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PDF DS1225Y 28-pin DS1225Y 2864 eeprom EEPROM 2864 Ram 2864 2764 EPROM 2864 EPROM 2764 EEPROM 2864 RAM nv sram 8 pin 2764 eprom PINOUT EEPROM 2864 CMOS
2864 eeprom

Abstract: 2764 EEPROM EEPROM 2864 CMOS 2764 eprom PINOUT A2A1G
Text: EPROM and the 2864 EEPROM , allowing direct substi tution while enhancing perform ance. There is no limit , D S 1225AB/AD DALLAS SEMICONDUCTOR FEATURES · 10 years m inim um data retention in the absence of external power · Data is autom atically protected during power loss · Directly replaces 8K x 8 volatile static RAM or EEPROM · Unlim ited write cycles · L o w -p o w e r CMOS DS1225AB/AD 64K Nonvolatile SRAM PIN ASSIGNMENT NC 1 Al2 A7 A6 A5 A4 A3 I ? 28 a VCC WÉ 27 H 26 Ü 25 H 24 j


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PDF 1225AB/AD DS1225AB/AD DS1225AD) 2864 eeprom 2764 EEPROM EEPROM 2864 CMOS 2764 eprom PINOUT A2A1G
M2864

Abstract: EEPROM 2864
Text: of 10 thousand cycles. Features rn 64K EEPROM •Military Temperature M2864 • Extended , Timer •Automatic Byte Erase Before Byte Write • 2 ms Byte Write (M2864H) ■The EEPROM has , memory ( EEPROM ). It Is packaged in a 28 pin package and has aready/busy pin. This EEPROM is ideal for , -I Ordering Information D E 2864 H - 250 IQ D M 2864 H • 250 IB , 125*0 (MILITARY) E - -40®C to +85° C (EXTENDED) EEPROM BYTE WRITE TIME 8K X 8 EEPROM


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PDF M2864/M2864H E2864/E2864H M2864 E2864 M2864H) MD400003/B M2864 EEPROM 2864
2864 eeprom pin details

Abstract: 80535 IC 2864 eeprom New Micros NMIS-0016 EEPROM 2864 ic 2864 eprom processor cross reference 8051 m2864 USSR
Text: , dedicated applications. Only the addition of the user program is required, in its internal EEPROM , or its b a tte ry b ac k ed RAM , or in a u se r-su p p lie d ROM/EPROM/ EEPROM . The 2x4"sTM series of , . 22,1992 C riirfl 3 0 20b4 27& 4 8 K »S C P g p M 2864 8K x8 E E P R G M The system


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PDF NMIS-0016 NMIS-0016 80535-based RS-232 RS422/485 16-bit 28-pin 2864 eeprom pin details 80535 IC 2864 eeprom New Micros EEPROM 2864 ic 2864 eprom processor cross reference 8051 m2864 USSR
2864 eeprom

Abstract: EEPROM 2864 2864 EEPROM 28 PINS EE64K8 EE64K8-45 EE64K8-55 EE64K8-70
Text: €¢ REPLACES THE 2864 EEPROM DESCRIPTION The LATTICE EE64K8 is a 65,536-bit nonvolatile electrically erasable , EE64K8 HIGH-SPEED 64K EEPROM (8K X 8) FEATURES FUNCTIONAL BLOCK DIAGRAM • FAST READ ACCESS , and decoder 65,536-bit eeprom array column buffers and decoders , /629-2131 FAX 503/645-7921 TELEX 277338 LSC UR 29 urna EE64K8 HIGH-SPEEO 64K EEPROM (8K X 8) SYMBOL , 97006 503/629-2131 FAX 503/645-7921 TELEX 277338 LSC UR 30 > EEPROM (8K X


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PDF EE64K8 EE64K8-45: EE64K8-55: EE64K8-70: EE64K8 536-bit 600-mil 28-pin, 2864 eeprom EEPROM 2864 2864 EEPROM 28 PINS EE64K8-45 EE64K8-55 EE64K8-70
2864 eeprom

Abstract: EEPROM 2864 2864 EEPROM 28 PINS 7921 EE64K8-45 EE64K8 EE64K8-55 EE64K8-70
Text: LATTI EE64K8 HIGH-SPEED 64K EEPROM (8K X 8) FEATURES FUNCTIONAL BLOCK DIAGRAM FAST READ , WRITE — Effective 625 ixs Write Cycle DATA POLLING RDY/BUSY PIN (OPEN DRAIN) REPLACES THE 2864 EEPROM DESCRIPTION The LATTICE EE64K8 is a 65,536-bit nonvolatile electrically erasable programmable , EE64K8 high-speed 64k eeprom (8k x 8) SYMBOL RATING VALUE —. UNIT VTERM Terminal Voltage with , EEPROM (8K X 8) AC ELECTRICAL CHARACTERISTICS (READ CYCLE) (Vcc = 5V± 10%, Ta = 0°C to 70Â


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PDF EE64K8 EE64K8-45: EE64K8-55: EE64K8-70. EE64K8 536-bit 625/ts. 28-PIN, 2864 eeprom EEPROM 2864 2864 EEPROM 28 PINS 7921 EE64K8-45 EE64K8-55 EE64K8-70
DS1225Y

Abstract: DS1225Y-150 DS1225Y-200 DS1225Y-150IND DS1225Y-170 DS1225Y-200IND CI EEPROM 2864 EEPROM 2864
Text: matches the pinout of the 2764 EPROM or the 2864 EEPROM , allowing direct substitution while enhancing , DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 28-pin DIP package Read and write access times as fast as 150 ns Full ±10%


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PDF DS1225Y 28-pin 150ns 170ns 200ns DS1225Y DS1225Y-150 DS1225Y-200 DS1225Y-150IND DS1225Y-170 DS1225Y-200IND CI EEPROM 2864 EEPROM 2864
2010 - EEPROM 2864

Abstract: DS1225Y 8k eprom 2764 DS1225Y-150 DS1225Y150IND mdt28 EEPROM 2864 CMOS 2864 eeprom
Text: bytewide 28-pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or the 2864 EEPROM , 19-5603; Rev 10/10 NOT RECOMMENDED FOR NEW DESIGNS DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 28-pin DIP package


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PDF DS1225Y 28-pin MDT28 EEPROM 2864 DS1225Y 8k eprom 2764 DS1225Y-150 DS1225Y150IND EEPROM 2864 CMOS 2864 eeprom
2007 - DS1225Y

Abstract: No abstract text available
Text: matches the pinout of the 2764 EPROM or the 2864 EEPROM , allowing direct substitution while enhancing , DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 28-pin DIP package Read and write access times as fast as 150 ns Full ±10% operating range Optional


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PDF DS1225Y 28-pin 24-Pin 720-mil A0-A12 150ns 170ns
2864 eeprom

Abstract: DS1225Y-150 DS1225Y EEPROM 2864 CMOS DS1225Y-200 EEPROM 2864 DS1225Y-200IND DS1225Y-170 DS1225Y-150IND 2764 eprom PINOUT
Text: the 2764 EPROM or the 2864 EEPROM , allowing direct substitution while enhancing performance. There is , DS1225Y 64k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 28-pin DIP package Read and write access times as fast as 150 ns Full ±10% operating range Optional industrial


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PDF DS1225Y 28-pin 24-Pin 720URE DS1225Y-150 DS1225Y-150+ DS1225Y-150IND DS1225Y-150IND+ DS1225Y-170 DS1225Y-170+ 2864 eeprom DS1225Y-150 DS1225Y EEPROM 2864 CMOS DS1225Y-200 EEPROM 2864 DS1225Y-200IND DS1225Y-170 DS1225Y-150IND 2764 eprom PINOUT
DS1225Y

Abstract: No abstract text available
Text: or the 2864 EEPROM , allowing direct substitution while enhancing performance. There is no limit on , DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 28 1 VCC 2 27 1 WE A7 1 3 26 1 NC A6 1 25 1 A8 5 « A9 A4 co CM • Low-power CMOS 4 A5 1 • Unlimited write cycles CO • Directly replaces 8K x 8 volatile static RAM or EEPROM 1 A12 | • Data is


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PDF DS1225Y 28-pin Vcc11. DS1225Y 28-PIN
ds1226y

Abstract: Ram 2864 DS1225Y-100 DS1225V DS122SY 2864 EEPROM DS1225Y EEPROM 2864 2864 EEPROM 28 PINS 2bl42
Text: also matches the pinout of the 2764 EPROM or the 2864 EEPROM , allowing direct substitution while , DALLAS SEMICONDUCTOR CORP 3ÌE D Sbl413Q 00033^0 M «DAL ds1225y DALLAS SEMICONDUCTOR T-m^-z^y] DS1225Y 64K Nonvolatile SRAM ••—'srvj-'ii-ji-rrv.^ ' • FEATURES • Data retention In the absence of Voc • Data Is automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM • Unlimited write cycles • Low-power CMOS • Over 10


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PDF Sbl413Q ds1225y DS1225Y 28-pin 100ns, 120ns, 150ns, 170ns, 200ns DS1225V ds1226y Ram 2864 DS1225Y-100 DS122SY 2864 EEPROM EEPROM 2864 2864 EEPROM 28 PINS 2bl42
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