The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
282565-000 TE Connectivity Ltd WIRE AND CABLE
282568-000 TE Connectivity Ltd 44A0211-24-3
X28HC256FM-15 Intersil Corporation 32KX8 EEPROM 5V, 150ns, CDFP28, CERAMIC, DFP-28
X28HC256DMB-90 Intersil Corporation 32KX8 EEPROM 5V, 90ns, CDIP28, CERDIP-28
X28HC256FMB-12 Intersil Corporation 32KX8 EEPROM 5V, 120ns, CDFP28, 0.440 INCH, DFP-28
X28HC256KMB-12 Intersil Corporation 32KX8 EEPROM 5V, 120ns, CPGA28, CERAMIC, PGA-28

EEPROM 28256 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1992 - EEPROM 2864

Abstract:
Text: (27020) 256K 27C040 EPROM (27040) 512K 27C080 EPROM (27080) 1M EEPROM 2864 EEPROM (2864) 8K DATA : 8BIT 28512 EEPROM ( 28256 ) 32K FLASH ROM 29512 FLASH , only EPROM. But EeRom-8U ROM Emulator can emulate many types of memories (EPROM, Flash-ROM, EEPROM , , 27LV080 2864 8K 2864A/AE/B/BE, 28C64/A/AX, 28HC64/B, 28PC64/E, 28BV64, 28LV64/B 28256 32K


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PDF ADP32: 32-PLCC 32-DIP ADP28: 28-DIP EEPROM 2864 EPROM 27020 EEPROM 28256 27E020 28pC64 28c64 EEPROM 2864 INTEL 27C040Q EPROM 27256 eeprom 27C040 intel 27512 eprom
1992 - EEPROM 2864

Abstract:
Text: 27C040 EPROM (27040) 512K 27C080 EPROM (27080) 1M EEPROM 2864 EEPROM (2864) 8K DATA : 8BIT 28512 EEPROM ( 28256 ) 32K FLASH ROM 29512 FLASH (29512) 64K DATA , EPROM. But EeRom-8U ROM Emulator can emulate many types of memories (EPROM, Flash-ROM, EEPROM , NVRAM , 2864A/AE/B/BE, 28C64/A/AX, 28HC64/B, 28PC64/E, 28BV64, 28LV64/B 28256 32K 28C256, 28HC256


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PDF ADP32: 32-PLCC 32-DIP 28-DIP EEPROM 2864 2864A eeprom 27C020 27C512 eprom 27h256 INTEL 27C64 ROM 27C512 27C256 27C128 27C040
VARTA 100 DKO Battery

Abstract:
Text: Erasable, Programmable, Read Only Memory, ( EEPROM ) for program backup. Three configurations are actively , Storage (Groups 2 -> 7) 3100-ME3 DRC Backup Memory Board (MEM86-3*192/E3E100) E3 192kbyte EEPROM Backup Memory (Groups 0 -> 5) El 64kbyte EEPROM Backup Memory (Groups 6 & 7) 00 192kbyte empty sockets 3100 , Program Storage (Groups 2 & 3) 128kbyte EEPROM Backup Memory (Groups 0 -> 3) Specifications Power , equipped with EEPROM-memories( 28256 ) +5V 1.4 A 0 Battery: Varta 100, DKO, 3.6V, lOOmAH Environment


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PDF 3100-MEM MEM86-3X192K MEM86-3xl92k MEM86-192K 32Kbyte 3100-MS4 MEM86-3 192/CMBMR3) VARTA 100 DKO Battery VARTA NI-CD VARTA 100 "VARTA 100 DKO" 28256 eeprom EEPROM 28256 EEPROM S18 MS-5 stromberg
28256 eeprom

Abstract:
Text: existing 32K x 8 SRAMs directly conforming to the popular bytewide 28256 EEPROM , allowing direct


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PDF DS1235Y/AB 28-pin DS1235Y) DS1235AB) DS1235Y/AB 144-bit, 200ns 28256 eeprom DS1235AB EEPROM 28256 DS1235Y AB15C AO-A14 DS123SY RAM MEMORY 28256
28256 eeprom

Abstract:
Text: the 28256 EEPROM , allowing direct substitution while enhancing performance. There is no limit on the , DALLAS SEMICONDUCTOR CORP ■3RE D DALLAS SEMICONDUCTOR stimaci 0DG3M0S a «dal _ _ ^^OTWB DS1230Y/AB 256K Nonvolatile SRAM FEATURES • Data retention in the absence of Vcc • Data Is automatically protected during the decrease in Vco at power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM • Unlimited write cycles • Low-power CMOS • Over 10 years of data


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PDF DS1230Y/AB 28-pin 100ns, 120ns, 150ns, 200ns DS1230 28256 eeprom DS1230Y-200 DALLAS EEPROM 28256 28256 DS1230AB DS1230Y
Not Available

Abstract:
Text: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES · Data retention in the absence of Vcc · Data is automatically protected during the decrease in Vcc at power loss · Directly replaces 32K x 8 volatile static RAM or EEPROM · Unlimited write cycles · Low-power CMOS · Over 10 years of data retention · Standard 2 , conforming to the popular bytewide 28 pin DIP standard. The DS1230AB also matches the pinout of the 28256 EEPROM , allow ing direct substitution while enhancing performance. There is no limit on the number of


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PDF DS1230Y/AB 1230Y/A DS1230Y/AB 28-PIN
Not Available

Abstract:
Text: DIP standard. The DS1230AB also matches the pinout of the 28256 EEPROM , allow­ ing direct , DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of VCc A14 • Data is automatically protected during the decrease in Vcc at power loss A12 • Directly replaces 32K x 8 volatile static RAM or EEPROM A6 A7 A5 • Unlimited write cycles A4 • Low-power CMOS A3 • Over 10 years of data


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PDF DS1230Y/AB 28-pin 28-PIN
28256 eeprom

Abstract:
Text: byte wide 28-pin DIP standard. The DS1230AB also matches the pinout of the 28256 EEPROM allowing direct , DALLAS SEMICONDUCTOR CORP CHE D | 5L1413D 0DG52SD D | -23-lt-f [■Dallas Semiconductor 2S6K Nonvolatile SRAM PFälUMGMGW , DS1230Y DS1230AB FEATURES • Data retention in the absence of~ Vcc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM • Unlimited write cycles • CMOS ■low power operation • Over 10 years of data retention


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PDF 5L1413D 0DG52SD -23-lt-f DS1230Y DS1230AB 28-pin 100pF QS257 DS1230A3 28256 eeprom dallas date code FOR DS1230Y EEPROM 28256 28256 DS1230AB A14C
Not Available

Abstract:
Text: 28 pin DIP standard. The DS1230AB also matches the pinout of the 28256 EEPROM , allow­ ing direct , DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of V cc A14 I1 1 A12 I1 A7 I1 A6 I1 A5 I1 A4 • Data is automatically protected during the decrease in V cc at power loss I1 6 • Directly replaces 32K x 8 volatile static RAM or EEPROM • Unlimited write


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PDF DS1230Y/AB 28-pin 28-PIN
28256 eeprom

Abstract:
Text: D S 1230Y/AB DALLAS SEMICONDUCTOR FEATURES · Data retention in the absence of V qC · Data is automatically protected during the decrease in Vc c at power loss · Directly replaces 32K x 8 volatile static RAM or EEPROM · Unlimited write cycles · Low-power CMOS · Over 10 years of data retention · Standard , conforming to the popular bytewide 28 pin DIP standard. The DS1230AB also matches the pinout of the 28256 EEPROM , allow ing direct substitution while enhancing performance. There is no limit on the number of


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PDF 1230Y/AB 28-pin DS1230Y/AB DS1230Y/AB 28256 eeprom
2007 - DS1230

Abstract:
Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 100ns Lithium energy source is electrically disconnected to retain , the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230W


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PDF DS1230W 100ns 28-pin DS1230 DS1230W DS1230W-100 DS1230W-100IND DS1230W-150 DS1230WP-100 DS1230WP-100IND DS9034PC
2009 - DS1230

Abstract:
Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 100ns Lithium energy source is electrically disconnected , the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230W


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PDF DS1230W 100ns 28-pin DS1230 DS1230W DS1230W-100 DS1230W-100IND DS1230W-150 DS1230WP-100 DS1230WP-100IND DS9034PC
2010 - DS12

Abstract:
Text: 19-5636; Rev 11/10 DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times of 100ns Lithium energy source is electrically disconnected to , also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance


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PDF DS1230W 100ns 28-pin MDT28 DS12 DS9034PCI DS9034PC DS1230WP-100IND DS1230WP-100 DS1230W-100IND DS1230W-100 DS1230W DS1230 EEPROM 28256
1999 - SRAM 34 pin

Abstract:
Text: DS1230W 3.3V 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns Lithium energy source is electrically , the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230W


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PDF DS1230W 28-pin SRAM 34 pin EEPROM 28256 28256 eeprom nv sram 8 pin DS9034PC DS1230W-150 DS1230W DS1230 backup protect pinout 34-PIN
2002 - 34-PIN

Abstract:
Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 100ns Lithium energy source is electrically , . The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing


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PDF DS1230W 100ns 28-pin 34-PIN DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC
28256

Abstract:
Text: directly conforming to the popular bytewide 28256 EEPROM , allowing direct substitution while enhancing


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PDF 2blM13D DS1235Y/AB 28-pin DS1235Y) DS1235AB) DS1235Y/AB 200ns 28256 28256 eeprom fci dh 22 AO-A14 DS1235AB ds1235y EEPROM 28256 wf vqc 10 d a6
Not Available

Abstract:
Text: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES · 10 years minimum data retention in the absence of external power · Data is automatically protected during power loss · DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM · Unlimited write cycles · Low-power CMOS · Read and write access times as fast as 70 ns · Lithium energy source is electrically disconnected to retain freshness , the pinout of 28256 EEPROMs, allowing di rect substitution while enhancing performance. DS1230 devices


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PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin 68-pin packag02 DS1230Y/AB 34-PIN
DALLAS SEMICONDUCTOR Ds1230

Abstract:
Text: DS1230 Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM • Unlimited write cycles • Low-power CMOS • Read and write access times as fast as 70 ns • Lithium energy , 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices in the Low


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PDF DS1230 DS1230Y/AB DS1230Y) DS1230AB) 28-pin 2bl4130 DS1230YL/ABL 34-PIN 68-pin DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 DS1230Y-150 DALLAS DS1230Y DS1230AB CI 0740 LV 2.8 1230Y
2002 - plcc 68-pin socket

Abstract:
Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 100ns Lithium energy source is electrically , . The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing


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PDF DS1230W 100ns 28-pin plcc 68-pin socket 28256 34-PIN DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC EEPROM 28256
28256 eeprom

Abstract:
Text: conforming to the popularbytewide 28256 EEPROM , allowing direct substitution while enhancing performance


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PDF 0S1235Y/AB DS1235Y/AB 28-pin DS1235Y) DS1235AB) 144-b 200ns 28256 eeprom DS1235Y
2010 - ds1230ab date code

Abstract:
Text: 19-5635; Rev 11/10 DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times of 70 ns Lithium energy source is , the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices


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PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin MDT28 ds1230ab date code DS1230 DS9034PCI DS9034PC DS1230Y-70 DS1230Y DS1230ABP-70 DS1230AB-70 DS1230AB EEPROM 28256
1998 - DS1230

Abstract:
Text: x 8 volatile static RAM, EEPROM or Flash memory · Unlimited write cycles retain freshness , popular bytewide 28­pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing


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PDF DS1230W DS1230 DS1230W DS9034PC EEPROM 28256
1995 - 28256 eeprom

Abstract:
Text: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT · 10 years minimum data retention in the absence of external power A14 3 26 A13 4 25 A8 5 24 A9 A4 · Low-power CMOS WE A5 · Unlimited write cycles VCC 27 A6 static RAM or EEPROM 28 2 A7 · DIP-package devices directly replace 32K x 8 volatile 1 A12 , . The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing


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PDF DS1230Y/AB DS1230YL/ABL DS34PIN 28256 eeprom DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 DS1230Y DS1230AB-85 DS1230AB-70 DS1230AB DS1230 DQ213
2000 - Fairchild 24C04

Abstract:
Text: FM24C04U/05U ­ 4K-Bit Standard 2-Wire Bus Interface Serial EEPROM General Description Features , synchronously clock data between the master (for example a microprocessor) and the slave EEPROM device(s). The Standard IIC protocol allows for a maximum of 16K of EEPROM memory which is supported by the Fairchild , requires with any combination of EEPROMs. In order to implement higher EEPROM memory densities on the IIC , -Wire Bus Interface Serial EEPROM August 2000 FM24C04U/05U ­ 4K-Bit Standard 2-Wire Bus Interface


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PDF FM24C04U/05U FM24C04U/05U FM24C05U Fairchild 24C04 program eeprom 24c04 6 24C05 24C04 FM24C32 M08A MTC08
2000 - 24C08

Abstract:
Text: FM24C08U/09U ­ 8K-Bit Standard 2-Wire Bus Interface Serial EEPROM General Description Features , synchronously clock data between the master (for example a microprocessor) and the slave EEPROM device(s). The Standard IIC protocol allows for a maximum of 16K of EEPROM memory which is supported by the Fairchild , requires with any combination of EEPROMs. In order to implement higher EEPROM memory densities on the IIC , -Wire Bus Interface Serial EEPROM August 2000 FM24C08U/09U ­ 8K-Bit Standard 2-Wire Bus Interface


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PDF FM24C08U/09U FM24C08U/09U FM24C09U 24C08 24C08 cross reference 24C09 FM24C32 M08A MTC08
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