The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LF198S Linear Technology IC SAMPLE AND HOLD AMPLIFIER, PDSO, Sample and Hold Circuit
LF198AJ8 Linear Technology IC SAMPLE AND HOLD AMPLIFIER, CDIP8, Sample and Hold Circuit
LF198AS Linear Technology IC SAMPLE AND HOLD AMPLIFIER, PDSO, Sample and Hold Circuit
LF198AN8 Linear Technology IC SAMPLE AND HOLD AMPLIFIER, PDIP8, Sample and Hold Circuit
LF198J8 Linear Technology IC SAMPLE AND HOLD AMPLIFIER, CDIP8, Sample and Hold Circuit
LT1490AIS8#TRA1PBF Linear Technology Dual and Quad Micropower Rail-to-Rail Input and Output Op Amps

EE and EF Core Specifications Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - TRANSFORMER ERL35

Abstract: ERL-35 EE19 type core erl-28 TPHERL354430H ee42 bobbin 16 pin PQ-32/TRANSFORMER ERL35 ERL+35+transformer ei-33 ERL28
Text: dimension (L*W*H): 27*26*18mm Max. Power: 40W Max. Core Type EE , EF , EI Reference Data Feature and , : 0086-755-29832660 Fax: 0086-755-82269029 E-Mail: sunlord@sunlordinc.com Core Type EE , EF , EI Reference Data P/N , : 0086-755-29832660 Fax: 0086-755-82269029 E-Mail: sunlord@sunlordinc.com Core Type EE , EF , EI Reference Data P/N , : 0086-755-29832660 Fax: 0086-755-82269029 E-Mail: sunlord@sunlordinc.com Core Type EE , EF , EI Reference Data P/N , : 0086-755-29832660 Fax: 0086-755-82269029 E-Mail: sunlord@sunlordinc.com Core Type EE , EF , EI Reference Data P/N


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PDF WEE13 WEE13 100mm, EFD38 TPHWEP131412Hâ TRANSFORMER ERL35 ERL-35 EE19 type core erl-28 TPHERL354430H ee42 bobbin 16 pin PQ-32/TRANSFORMER ERL35 ERL+35+transformer ei-33 ERL28
2002 - ZTR 200

Abstract: IDT821054 EE and EF Core Specifications AN9999 unislic14
Text: right to make changes in circuit design, software and /or specifications at any time without notice , UniSLIC14 and the IDT821054/64 Programmable Quad CODEC ® Application Note May 2002 AN9999.0 Author: Don LaFontaine Reference Design using the UniSLIC14 and the IDT821054/64 , reference design for the UniSLIC14 and IDT821054/64 Programmable Quad CODEC. The network requirements of , Mode Figure 2 shows a simplified AC transmission model of the UniSLIC14 and the connection of the


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PDF UniSLIC14 IDT821054/64 AN9999 UniSLIC14 ZTR 200 IDT821054 EE and EF Core Specifications
how to calculate ferrite core transformer

Abstract: how to calculate turn ratio for ferrite core transformer PHILIPS pot core 3f3 cma 00124 TDK Ferrite Core PC40 "EI CORE" step down transformer winding ratio TDK Ferrite Core PC44 etd34 ETD 34 3c85 EE19 TDK Ferrite Core PC40
Text: . a) E, EE or EF core c) EI core e) EPC core b) EER core d) EFD core f) ETD core Fig , restraints. EFD and EPC cores are used when a low profile is required. E, EE , and EF are good general cores , stored in the air gap of the core , and during the off time of the primary switch, this energy is , can calculate the transformer parameters, and select an appropriate core . Iterations may be needed if , calculate the required core size and air gap. First select a core size, you can use Section 5 which gives


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PDF AN-1024 IRIS40xx AN1024a how to calculate ferrite core transformer how to calculate turn ratio for ferrite core transformer PHILIPS pot core 3f3 cma 00124 TDK Ferrite Core PC40 "EI CORE" step down transformer winding ratio TDK Ferrite Core PC44 etd34 ETD 34 3c85 EE19 TDK Ferrite Core PC40
cma 00124

Abstract: ETD34 PC40 AN1024a EE 25 bobbin epcos make EE19 TDK Ferrite Core PC40 philips 3C85 ferrite material EPC25 bobbin Transformer and Inductor Design Handbook, flyback transformer design FERRITE TRANSFORMER 20khz toroid
Text: . a) E, EE or EF core c) EI core e) EPC core b) EER core d) EFD core f) ETD core Fig , restraints. EFD and EPC cores are used when a low profile is required. E, EE , and EF are good general cores , stored in the air gap of the core , and during the off time of the primary switch, this energy is , can calculate the transformer parameters, and select an appropriate core . Iterations may be needed if , calculate the required core size and air gap. First select a core size, you can use Section 5 which gives


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PDF AN-1024a IRIS40xx AN1024a cma 00124 ETD34 PC40 AN1024a EE 25 bobbin epcos make EE19 TDK Ferrite Core PC40 philips 3C85 ferrite material EPC25 bobbin Transformer and Inductor Design Handbook, flyback transformer design FERRITE TRANSFORMER 20khz toroid
2001 - 9947

Abstract: HC55185 IDT821068 IM30 74 act 07 55 ECF
Text: AMPLIFIER FIGURE 2. HC55185 SIMPLIFIED AC TRANSMISSION CIRCUIT AND IDT821068 2 DSP CORE PCM/GCI , : 6C FC 85 EE 1A 25 E3 EF FF 7F 00 00 00 00 00 00 ECF , , software and /or specifications at any time without notice. Accordingly, the reader is cautioned to verify , HC55185 and the IDT821068 Programmable Octal PCM CODEC TM Application Note December 2001 AN9947.1 Author: Don LaFontaine Reference Design using the HC55185 and the IDT821068 Programmable


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PDF HC55185 IDT821068 AN9947 IDT821068 9947 IM30 74 act 07 55 ECF
Not Available

Abstract: No abstract text available
Text: POSITIONS A1 AND A5 ONLY FOR ALL DIMENSIONS SEE 10128347-101LF ON SHEET 1 Ik spec r ef SHU CHE N NOTES 2014-03- 27 SHU CHE N S EE t ol er ance std 2014-03- 27 pr o j e c t i o n A2 , spec r ef t ol er ance std SHU CHE N NOTES 2014-03- 27 SHU CHE N S EE 2014-03- 27 , spec r ef t ol er ance std SHU CHE N NOTES 2014-03- 27 SHU CHE N S EE 2014-03- 27 , /SHORT DETECT RECEPTACLE ADVANCED MATE POSITIONS ARE POSITIONS Al AND A5 ONLY SHORT DETECT POSITION IS


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PDF 10128347-201LF 10128347-101LF
2000 - AN-347

Abstract: HC55185 IDT821068 IM30 06B7 AN347 FD6505 55 ECF
Text: CHANNEL 2 IMF: 6C FC 85 EE 1A 25 E3 EF FF 7F 00 00 00 00 , FC 85 EE 1A 25 E3 EF FF 7F 00 00 00 00 00 00 ECF: 9D , GTX EE 2D ACR: 2E FC 86 06 EF 3C EF 3C 86 06 2E FC 01 , HC55185 and the IDT821068 Programmable Octal PCM CODEC Application Note AN-347 Author: Don , provide a reference design for the HC55185 and IDT821068 Programmable Octal PCM CODEC. The network


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PDF HC55185 IDT821068 AN-347 IDT821068 IDT82 AN-347 IM30 06B7 AN347 FD6505 55 ECF
2002 - difference between 8051 and 8052 microcontroller

Abstract: EE and EF Core Specifications IEEE-1451 IEEE1451 12-Bit DAC counter 3 phase sine wave pwm c source code for 8051
Text: multichannel ADC, dual DAC and programmable 8-bit MCU on a single chip. The microcontroller core is an 8052 and therefore 8051-instruction-set-compatible with 12 core clock periods per machine cycle. 62 Kbytes , pF. 12 Flash/ EE Memory Performance Specifications are qualified as per JEDEC Specification (Data , 62Kbytes On-Chip Flash/ EE Program Memory 4KBytes On-Chip Flash/ EE Data Memory Flash/ EE , 100 Yr Retention, 100 Kcycles Endurance 2304 Bytes On-Chip Data RAM 8051 Based Core 8051-Compatible Instruction Set


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PDF ADuC831 12-Bit 62Kbytes 8051-Compatible 16MHz 11-bit difference between 8051 and 8052 microcontroller EE and EF Core Specifications IEEE-1451 IEEE1451 12-Bit DAC counter 3 phase sine wave pwm c source code for 8051
kq 330 plc modem

Abstract: VH69M vh48 30MHZ BH7777AK vh46
Text: setting. O.OV EF (NPN) ~2000 2, 64 LINE IN L, R Line input (L and R). GND bias resistor required. 0.0V B , : EF (NPN) PB : 50kO 12, 36 MODEM I/O L, R MODEM input/output ( EE : modulated input, PB: demodulated output) 2.5V EE : 50kO PB : EF (NPN) 13 DEV ADJ, Deviation fine adjustment. - B (NPN) 14, 35 GNDm (GNM , pin, Sine wave output. BPF output monitor pin. EE : 2.7V PB ; 2,7V EF (NPN) -2000 20 PLC L (F - NORMAL OUT) PLC time constant setting. FM detector signal output, EE : O.OV PB : 4.5V 0.0V EE : EF (NPN


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PDF BH7777AK BH7777AK kq 330 plc modem VH69M vh48 30MHZ vh46
1998 - M29W040

Abstract: M39432 AI02028
Text: state on the EE and EF inputs respectively. When a specific voltage (VID) is applied on the A9 address , (DQ0-DQ7). A write operation inputs one byte which is latched when EE (or EF ) and Write Enable W are , block Identifier, the EEPROM identifier or the OTP row content. Memory Block Enable ( EE and EF ). The Memory Block Enable ( EE or EF ) activates the memory control logic, input buffers, decoders and sense , ( EE low and EF low) are forbidden. Switching between the two memory block enables ( EE and EF ) must


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PDF M39432 120ns M39432 M29W040 AI02028
1997 - M29W040

Abstract: M39432
Text: (DQ0-DQ7). A write operation inputs one byte which is latched when EE (or EF ) and Write Enable W are , block Identifier, the EEPROM identifier or the OTP row content. Memory Block Enable ( EE and EF ). The Memory Block Enable ( EE or EF ) activates the memory control logic, input buffers, decoders and sense , ( EE low and EF low) are forbidden. Switching between the two memory block enables ( EE and EF ) must , in standby when both EF and EE are High (when no internal Erase or programming is running). The


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PDF M39432 120ns M39432 M29W040
2003 - ADSP-TS101S

Abstract: EE-68 EE-169 EE-174 EE-176 ADSP-TS101
Text: Operation ( EE -174)" and the source code files under ".\Analog Devices\VisualDSP\Ts\ldr" to learn the whole , module is chosen to provide the right voltage and enough current to the core and I/O part of TigerSHARC , detailed and updated information, refer to [6] "Analog Devices JTAG Emulation Technical Reference( EE -68)". , Engineer-to-Engineer Note a EE -176 Technical notes on using Analog Devices DSPs, processors and development tools Contact our technical support at dsp.support@analog.com and at


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PDF EE-176 ADSP-TS101S processTS101S' Addr31-0 EE-176) EE-68 EE-169 EE-174 EE-176 ADSP-TS101
2004 - SG09

Abstract: EE13 8 pin bobbin transformers cm choke ee8.3 sg07 AL-1 94V-0 EE and EF Core Specifications EE8.3 core EF12.6 EE13 core al EFD17
Text: reel packaging Specifications Core AL-1, nH/T2 AL-2, nH/T2 AL-3, nH/T2 AL-4, nH/T2 AL-5, nH/T2 Ae , wdg. area, cm2 * WaAc, cm4 UL flammability rating STANDARD GEOMETRIES SIZES 1 TO 5 CORE AND BOBBIN , STANDARD GEOMETRIES SIZES 6 TO 9 CORE AND BOBBIN PARAMETERS SG6 SG7 SG8 EE8.3 EF12.6 EE13 675 1075 1100 96 , 1200 155 83 67 53 0.3100 4.70 1.460 3.8359 0.1441 0.0447 94V-0 Specifications Core AL-1, nH/T2 AL , for custom specifications · Power range from 1 Watt to 120 Watts · Frequency range from 20kHz to .5MHz


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PDF 20kHz SG09 EE13 8 pin bobbin transformers cm choke ee8.3 sg07 AL-1 94V-0 EE and EF Core Specifications EE8.3 core EF12.6 EE13 core al EFD17
2004 - EE-68

Abstract: ADSP-TS101S ts101 dsp application note EE-169 EE-174 EE-176 TS101 2003AN ADSP-TS101
Text: Operation ( EE -174)" and the source code files under ".\Analog Devices\VisualDSP\Ts\ldr" to learn the whole , module is chosen to provide the right voltage and enough current to the core and I/O part of TigerSHARC , detailed and updated information, refer to [6] "Analog Devices JTAG Emulation Technical Reference( EE -68)". , Engineer-to-Engineer Note a EE -176 Technical notes on using Analog Devices DSPs, processors and development tools Contact our technical support at dsp.support@analog.com and at


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PDF EE-176 ADSP-TS101S Addr31-0 EE-176) EE-68 ts101 dsp application note EE-169 EE-174 EE-176 TS101 2003AN ADSP-TS101
1997 - Not Available

Abstract: No abstract text available
Text: wire core ). Keep other antennas, metal objects and guy lines clear of the antenna under test. Do not , EB EC ED EE EF CB RM P/N 010009 010011 050013 050027 190032 190033 200069 190070 010084 010085 050115 , 409 409 409 409 409 EB EF D2 EE D1 27 27 ED EC DE REF 27 409 EE EA 409 EE , ED EE 1/4" (.63 cm) 1/4" (.63 cm) 10 10 1 FIGURE C 33 84 85 EF 27 050027 32 190032 , ASSEMBLY AND INSTALLATION A50-5S 5 ELEMENT 6 METER BEAM C O R P O R A T


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PDF A50-5S
1999 - M39208

Abstract: TSOP32
Text: block. The memory block selected is given by the state on the EE and EF inputs respectively. When a , inputs one byte which is latched when EE (or EF ) and Write Enable W are driven active. Data read is , is deselected (both EE and EF driven high) or the outputs are disabled (G driven high). Read , Enable ( EE and EF ). The Memory Block Enable ( EE or EF ) activates the memory control logic, input , both EEPROM and Flash blocks ( EE low and EF low) are forbidden. Switching between the two memory block


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PDF M39208 100ns M39208 TSOP32
1999 - Part Marking STMicroelectronics flash memory

Abstract: Diode Marking ef M29W040 M39432 ST EF 017
Text: is selected by the EE input, and the Flash memory block the EF input. A0-A14 access locations in , operation, one data byte is latched into the device when Write Enable (W) and one Chip Enable ( EF or EE , Enable (G) and one Chip Enable ( EF or EE ) are driven low. The output is high impedance when the chip is deselected (both EE and EF driven high) or the outputs are disabled (G driven high). Read operations are , the OTP row. Chip Enable ( EE and EF ) Each Chip Enable ( EE or EF ) causes the memory control logic


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PDF M39432 TSOP40 Part Marking STMicroelectronics flash memory Diode Marking ef M29W040 M39432 ST EF 017
SG09

Abstract: EE8.3 core SG08 sg07 sg05 sg05 diode EE13 8 pin bobbin transformers sg06 diode SG02 INVERTER 94V0
Text: 30 seconds maximum Specifications Core AL-1, nH/T2 AL-2, nH/T2 AL-3, nH/T2 AL-4, nH/T2 AL , , cm Wa, usable wdg. area, cm2 * WaAc, cm4 UL flammability rating Specifications Core AL-1, nH , reel packaging STANDARD GEOMETRIES SIZES 1 TO 5 CORE AND BOBBIN PARAMETERS SG1 SG2 SG3 SG4 ER , 94V-0 94V-0 94V-0 94V-0 STANDARD GEOMETRIES SIZES 6 TO 9 CORE AND BOBBIN PARAMETERS SG6 SG7 SG8 , available. For the very latest product data and news visit angliac.com SG SIZE 6 EE 8.3 Data


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PDF 20kHz SG09 EE8.3 core SG08 sg07 sg05 sg05 diode EE13 8 pin bobbin transformers sg06 diode SG02 INVERTER 94V0
Not Available

Abstract: No abstract text available
Text: (DQ0-DQ7). A write operation inputs one byte whjch is latched when EE (or EF ) and Write Enable W are driven , Enable are driven active. The output is high impedance when the chip is deselected (both EE and EF driven , Identifier, the EEPROM identifier or the OTP row content. Memory Block Enable ( EE and EF ). The Memory Block Enable ( EE or EF ) activates the memory control logic, input buffers, decoders and sense amplifiers. When , , the Flash memory block is not selected. Attempts to access both EEPROM and Flash blocks ( EE low and EF


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PDF M39432 120ns M39432
2012 - SMD CAPACITORS value recognition

Abstract: No abstract text available
Text: DD DD DD DL DL DL DL DL DL DL DG DG DG DG DG DG DG DG DG DG DG EB EB EB EC ED EE EF EF EC EC EC EE EF EB EB EB EC ED EE EF EF EC EC EC EE EF EB EB EB EC ED EE EF EF EC EC EC EE EF EB EB EB EC ED EE EF EH EC EC EC EE EF EH EH EH EH EK EK EH EK EK EH ED ED EH FD FD FD FD FF FH FD FD FD FG , Thickness Code BB CC DC DD DL DE DF DG EB EK EC ED EE EF EH FD FE FF FG FH FJ FK Thickness Code Case , /kemetcapacitors Location Disclaimer All product specifications , statements, information and data (collectively


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2013 - smd marking code fj

Abstract: No abstract text available
Text: DG DG DH DC DD DE DF DG DG CC¹ CC¹ DG DG DG DG EB EB EB EC ED EE EF EF EC EC EC EE EF EH ED EH EK EK ED EH EB EB EB EC ED EE EF EF EC EC EC EE EF EH ED EH EK EK ED EH EB EB EB EC ED EE EF EF EC EC EC EE EF EH ED EH EH EH EH EH EB EB EB EC ED EE EF EG EC EC EC EE EF EH ED EH EH , Thickness/Packaging Quantities Thickness Code AB BB BC CC DC DD DL DE DF DG DH EB EK EC ED EE EF EH FD FE , specifications , statements, information and data (collectively, the "Information") are subject to change without


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1W FM modulator

Abstract: 30MHZ 40MHZ 80MHZ BH7778AK VH4B FM bandpass filter
Text: ) o.ov EE : EF (NPN) PB : 50ka 12, 36 MODEM l/OL,R MODEM input/output ( EE : modulated input, PB: demodulated output) 2.5V EE ; 50k0 PB : EF (NPN) 13 ENVE OUT FM input Lch signal component envelope output. EE : 0.8V PB : 1.0V EE : 50kn PB : EF (NPN) 14, 35 GNDM(GNM) L, R GND for PNR and MODEM. Both L and , monitor pin. EE : 2.7V PB : 2.7V EF (NPN) -2000 20 PLC L EE : PLC time constant setting. PB: Connect C for FM detector carrier filter. EE ; o.ov PB : 1.8V EE : EF (NPN)~50kn PB : EF (P - P) ~400Q 21 GNDb


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PDF BH7778AK BH7778AK 1W FM modulator 30MHZ 40MHZ 80MHZ VH4B FM bandpass filter
2012 - KEM marking

Abstract: 1005 0402 ,metric
Text: ED DE DE EE DF DF EF DG DG DG EF DC EC DC EC DD EC DG EE DL EF DG EH DG EH DH DG EH EK EK ED DG EH EB EB EB EC ED EE EF EF EC EC EC EE EF EH EH EH EK EK ED EH EB EB EB EC ED EE EF EF EC EC EC EE EF EH EH EH EH EH EH EH EB EB EB EC ED EE EF EG EC EC EC EE EF EH EH EH EH EH DG¹ DG¹ EH¹ EH , Chip Thickness/Packaging Quantities Thickness Code AB BB BC CC DC DD DL DE DF DG DH EB EK EC ED EE EF , and P1 carrier tape reference locations. *Refer to Tables 6 & 7 for tolerance specifications


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Not Available

Abstract: No abstract text available
Text: (N PN ) tO kft 1 1kQ 1 1 .5 k 0 EE : EF (N PN ) PB : 5 0 k D EE : 50k fl PB : EF (NPN) B (N PN ) EF , FM RE C O U T L. R (BPF M O N ITO R L, R) PB : 4.5V O.OV O.OV O.OV 5.0V 1.8V EE : EF (N P N ) ~ 5 0 k fi PB : EF (NPN) 33k 0 B (PN P ) 21 22 23 24 25 26 (VCB) PB / EE CTRL BPF fo ADJ. PLC , /N CTRL EF (NPN ) ~ 2 0 0 G EE ! EF (NPN ) ~10kQ EE : o.ov PB ; 2.4V O.OV O.OV O.OV O.OV PB , . EF : emitter follower, P-P: push pull, B: base, and C: collector. All numerical values are


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PDF BH7777AK BH7777AK
2012 - EE and EF Core Specifications

Abstract: No abstract text available
Text: EF DG DG DG EE DC EC DC EC DD EC DG EE DL EF DG EH DG EH DH DG EH EK EK ED DG EH EB EB EB EC ED EE EF EE EC EC EC EE EF EH EH EH EK EK ED EH EB EB EB EC ED EE EF EE EC EC EC EE EF EH EH EH EH EH EH EH EB EB EB EC ED EE EF EH EC EC EC EE EF EH EH EH EH EH DG¹ DG¹ EH¹ EH¹ FD FD FD FD , DL DE DF EB EH EH EK EC ED EE EF FH FS FT FD FE FF FG FJ FK Thickness Code Case Size 0201 0402 , specifications , statements, information and data (collectively, the "Information") are subject to change without


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