TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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UPD48576236F1-E24-DW1-A
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Renesas Electronics Corporation
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576M-BIT Low Latency DRAM Common I/O |
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UPD48576218F1-E24-DW1-A
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Renesas Electronics Corporation
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576M-BIT Low Latency DRAM Common I/O |
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UPD48576236F1-E18-DW1-A
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Renesas Electronics Corporation
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576M-BIT Low Latency DRAM Common I/O |
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UPD48576209F1-E24-DW1-A
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Renesas Electronics Corporation
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576M-BIT Low Latency DRAM Common I/O |
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UPD48576118F1-E18-DW1-A
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Renesas Electronics Corporation
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576M-BIT Low Latency DRAM Separate I/O |
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