The Datasheet Archive

E3HT-1E1 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
E3HT-1E1 E3HT-1E1 ECAD Model Others 8 mm Metal Cylindrical Photoelectric Original PDF
E3HT-1E1 E3HT-1E1 ECAD Model OMRON 8 mm Metal Cylindrical Photoelectric Original PDF

E3HT-1E1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - E3HF-1DE

Abstract: e3hc-1l E3Hc-1E1 omron E3HT-DS3E1 1DE1 E3hf-ds5e E3HT-1E1 E3HS-1DE2 E3HT-1DE1 2M E3HT-DS3E1
Text: * Diffuse-reflective 1m 35 mm Through-beam * Diffuse-reflective 1m 35 mm E3HF-DS5E2 E3HS- 1E1 Emitter E3HS-1L Receiver E3HS-1DE1 E3HS-1E2 Emitter E3HS-1L Receiver E3HS-1DE2 E3HS-DS5E2 E3HT-1E1 , * E3HF-DS5E1 E3HS- 1E1 * E3HS-DS5E1 Light-ON E3HT-1E1 * E3HT-DS3E1 Timing charts Output circuit , - ON E3HF- 1E1 Emitter E3HF-1L Receiver E3HF-1DE1 E3HF-DS5E1 Sensing distance E3HT-DS3E2 E3HC- 1E1 Emitter E3HC-1L Receiver E3HC-1DE1 E3HC-1E2 Emitter E3HC-1L Receiver E3HC


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D3E diode

Abstract: omron E3HT-DS3E1 E3HT-1E1 E3HT-DS3E1 Metal detection sensor distance of 20 cm relay omron diagram
Text: E3HT E3HT 8 mm Metal Cylindrical Photoelectric E3HT Threaded Cylindrical M8 Size with Built-in DC Amplifier s s s s s Rugged Nickel-plated brass housing 1 m range through-beam Dual output NPN and TTL logic Light-ON or Dark-ON models Cable and connector models Ordering Information s SENSORS Method of detection Sensing distance Part Light-ON operation number Dark-ON operation Through-beam 1 m (3.28 ft) E3HT-1E1 E3HT-1E2 Diffuse reflective 3.5 cm (1.38 in


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PDF 1-800-55-OMRON D3E diode omron E3HT-DS3E1 E3HT-1E1 E3HT-DS3E1 Metal detection sensor distance of 20 cm relay omron diagram
1999 - E3HT-1E1

Abstract: TRANSISTOR REPLACEMENT table for transistor E3HT-DS3E2 INFRARED REFLECTANCE SENSORS
Text: 8 mm Metal Cylindrical Photoelectric E3HT Threaded Cylindrical M8 Size with Built-in DC Amplifier s s s s s Rugged Nickel-plated brass housing 1 m range through-beam Dual output NPN and TTL logic Light-ON or Dark-ON models Cable and connector models Ordering Information s SENSORS Method of detection Sensing distance Part Light-ON operation number Dark-ON operation Through-beam 1 m (3.28 ft) E3HT-1E1 E3HT-1E2 Diffuse reflective 3.5 cm (1.38 in) E3HT-DS3E1 E3HT-DS3E2


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PDF 1-800-55-OMRON E3HT-1E1 TRANSISTOR REPLACEMENT table for transistor E3HT-DS3E2 INFRARED REFLECTANCE SENSORS
omron E3HT-DS3E1

Abstract: E3HT-DS3E2 E3HT-1E1 relay omron diagram E3HT-DS3E1-M1J
Text: E3HT E3HT 8 mm Metal Cylindrical Photoelectric E3HT Threaded Cylindrical M8 Size with Built-in DC Amplifier s s s s s Rugged Nickel-plated brass housing 1 m range through-beam Dual output NPN and TTL logic Light-ON or Dark-ON models Cable and connector models Ordering Information s SENSORS Method of detection Sensing distance Part Light-ON operation number Dark-ON operation Through-beam 1 m (3.28 ft) E3HT-1E1 E3HT-1E2 Diffuse reflective 3.5 cm (1.38 in


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PDF 1-800-55-OMRON omron E3HT-DS3E1 E3HT-DS3E2 E3HT-1E1 relay omron diagram E3HT-DS3E1-M1J
Not Available

Abstract: No abstract text available
Text: c le 1E1 MSO 9M R M P lu g 1E1 M SO 9 M P K 1E1 A B C .37 (9,5) 1.31 (33,3) 1.00 (25,4) R e c e p ta c le MSO 9M R K 1E1 18 18M P M 1E1 MSO 18M R M 1E1 M SO 1 8 M P K 1E1 MSO 18M RK 1E1 .60 (15,2) 1.31 (33,3) 1.00 (25,4) 34 MSO 34M PM 1E1 MSO 34M R M 1E1 MSO 3 4 M P K 1E1 MSO 34M RK 1E1 .75 (19,0) 2 .0 0 (50,8) 1.69 (42,8) 50 MSO 50M P M 1E1 MSO 50M R M


OCR Scan
PDF F/257Â
1997 - Not Available

Abstract: No abstract text available
Text: 2500 1500 1000 tp 1E1 1E1 400 200 50 Hz T40HFL. Series Sinusoidal Pulse T = 70°C C 1E2 1E4 1E1 1E4 1E1 1E3 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth , tp 1E1 1E1 2500 1500 1000 400 200 50 Hz T40HFL. Series Sinusoidal Pulse T C 90°C = 1E2 1E4 1E1 1E4 1E1 1E3 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth , 0.01 1E1 tp 1E0 1E1 0.2 1 4 T40HFL. Series Sinusoidal Pulse T J = 125 °C 1E2


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PDF I27107 E78996 T85HFL. T40HFL. T70HFL.
1997 - IRK E78996

Abstract: IRK E78996 701819-303ac IRK E78996 p432 IRF E78996 S10 diode L240
Text: 2 20 joules per pulse 4 10 10 0.1 0 .04 0.02 0.01 0.01 1E2 1E1 tp 1E0 1E1 , T J = 150 °C 1E4 1E1 1E4 1E1 1E3 0.4 0. 2 4 1E2 Pulse Basewidth (µs) 1E3 , /S20 Sinusoidal Pulse T C = 100 °C 1E4 1E3 20000 10000 5 000 1E2 1E1 2500 1500 1000 1E2 400 200 50 Hz 20000 10000 5000 2500 1500 100 0 1E4 1E1 1E4 1E1 1E3 1E2 , 1E2 1E1 1E2 400 1E3 200 50 Hz 1E4 1E1 1E4 1E1 250 0 1500 1000 1E2 400


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PDF I27094 E78996 IRK E78996 IRK E78996 701819-303ac IRK E78996 p432 IRF E78996 S10 diode L240
2002 - STPS0560Z

Abstract: marking A2 diode SOD 123 stps0560z st STMicroelectronics 022 marking
Text: 0.5 0.0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 0 25 Fig. 4: Relative variation of thermal , voltage applied (typical values).(STPS0540Z) IR(mA) 5E+1 1E+1 1E+0 1E-1 Tj=125°C Tj=100°C Tj=70°C 1E-1 = 0.1 1E-2 Single pulse 1E-2 T Tj=25°C 1E-3 tp(s) 1E-3 1E-3 1E-2 1E-1 1E+0 =tp/T tp VR(V) 1E-4 0 5 10 15 20 25 30 35 40 1E+1 1E+2 3/5 STPS0540Z / STPS0560Z Fig , 1E+1 1E+0 1E-1 1E-2 Tj=25°C Tj=125°C Tj=100°C Fig. 6: Reverse leakage current versus junction


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PDF STPS0540Z STPS0560Z OD-123, STPS0560Z marking A2 diode SOD 123 stps0560z st STMicroelectronics 022 marking
2011 - Not Available

Abstract: No abstract text available
Text: 1E1 SERIES SUPERFAST RECOVERY RECTIFIERS VOLTAGE FEATURES · Plastic package has Underwriters , 1E1 SERIES RATING AND CHARACTERISTIC CURVES 100 AVERAGE FORWARD RECIFIED CURRENT AMPERES T J , November 4,2011-REV.06 PAGE . 2 1E1 SERIES Part No_packing code_Version 1E1 _AX_00001 1E1 _AX_10001 1E1 _AY_00001 1E1 _AY_10001 1E1 _B0_00001 1E1 _B0_10001 1E1 _R2_00001 1E1 _R2_10001 For example : RB500V , serial number serial number November 4,2011-REV.06 PAGE . 3 1E1 SERIES Disclaimer z


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PDF MIL-S-19500/228. 2002/95/EC MIL-STD-750, 2011-REV
2002 - STPS0560

Abstract: STPS0540Z Diode SOd-123 marking cu STPS0560Z 1E40
Text: board FR4 with recommended pad layout). =0.5 1E-2 1E-1 1E+0 Fig. 5-1: Reverse leakage current versus reverse voltage applied (typical values).(STPS0540Z) IR(mA) 5E+1 = 0.5 1E+1 = 0.1 Tj=125°C 1E+0 = 0.2 1E-1 t(s) t 0.0 1E-3 Zth(j-a)/Rth(j-a) 1E+0 IM 0.5 Tamb(°C) 50 STPS0560Z Tj=100°C Tj=70°C 1E-1 1E-2 1E-2 tp(s) 1E-3 1E-3 Tj=25°C T Single pulse 1E-2 1E-1 1E+0 1E-3 =tp/T 1E+1 VR(V) tp 1E+2


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PDF STPS0540Z STPS0560Z OD-123 OD-123, 0540Z STPS0560 Diode SOd-123 marking cu STPS0560Z 1E40
2000 - smd ED-4A data

Abstract: smd diode ED 08 BAT60J
Text: board FR4 with recommended pad layout). 0.0 1E-3 1E-2 1E-1 1E+0 Fig. 5: Reverse leackage current versus reverse voltage applied (typical values). IR(mA) Zth(j-a)/Rth(j-a) 1E+1 1E+0 = 0.5 Tj=150°C 1E+0 = 0.2 = 0.1 1E-1 Tj=80°C 1E-1 1E-2 Single pulse T 1E-2 Tj=25°C 1E-3 t(s) 1E-3 1E-4 1E-3 1E-2 1E-1 =tp/T 1E+0 1E+1 tp 1E+2 , =25°C VR=8V 1E+4 1E+3 1E+2 1E+1 1E+0 VR(V) Tj(°C) 1E-1 0 25 50 75 100 125


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PDF BAT60J OD-323 smd ED-4A data smd diode ED 08 BAT60J
1996 - SM2Z12

Abstract: SM2Z5V6 SM2Z200 zener sm2z12 SM2Z18 104 ZHZ SM2Z47
Text: SM2Z27 SM2Z56 0.05 10 SM2Z200 0.02 tp (s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 VR , values). I R(µA) 2E+3 Tj=125°C 2.0 1E+1 1.5 1.0 0.5 I FM(A) 0.0 1E-2 1E-1 1E+0 1E+1 2E+1 1E-1 , ). PZSM(W) RZT(Ohm) 1E+3 1000 1E+2 IZT=5mA VZT<62 V 1E+1 IZT=20mA IZT=10mA 100 1E+0 VZT>62 V IZT=100mA VZT(V) 1E-1 1 2 5 10 20 50 100 200 500 tp(ms) 10 1E-2 1E-1 1E+0 1E+1


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PDF SM2Z200 SM2Z12 SM2Z5V6 SM2Z200 zener sm2z12 SM2Z18 104 ZHZ SM2Z47
2002 - DIODE Z54

Abstract: sod123 diode marking A2
Text: 0.5 0.0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 0 25 Fig. 4: Relative variation of thermal , voltage applied (typical values).(STPS0540Z) IR(mA) 5E+1 1E+1 1E+0 1E-1 Tj=125°C Tj=100°C Tj=70°C 1E-1 = 0.1 1E-2 Single pulse 1E-2 T Tj=25°C 1E-3 tp(s) 1E-3 1E-3 1E-2 1E-1 1E+0 =tp/T tp VR(V) 1E-4 0 5 10 15 20 25 30 35 40 1E+1 1E+2 3/5 STPS0540Z / STPS0560Z Fig , 1E+1 1E+0 1E-1 1E-2 Tj=25°C Tj=125°C Tj=100°C Fig. 6: Reverse leakage current versus junction


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PDF STPS0540Z STPS0560Z OD-123, DIODE Z54 sod123 diode marking A2
1997 - Not Available

Abstract: No abstract text available
Text: =25°C = 0.1 Ta=50°C 0.10 Ta=100°C T Single pulse t =0.5 tp(s) t(s) 1E-2 1E-1 1E+0 0.01 1E-3 1E-2 1E-1 www.mccsemi.com =tp/T 1E+0 1E+1 tp 1E+2 MCC , =30V 1E+2 1E+3 Tj=100°C 1E+1 1E+2 1E+1 1E+0 Tj=50°C 1E+0 Tj=25°C 1E-1 1E-1 Tj(°C , =25°C 1E-1 5 Tj=100°C 1E-2 Tj=50°C Tj=25°C 2 1E-3 VFM(V) VR(V) 1 75 1 2 5


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PDF BAT54 BAT54S BAT54A BAT54C 250mWatt, 30Volt OT-23
Not Available

Abstract: No abstract text available
Text: 1E1 SERIES SUPERFAST RECOVERY RECTIFIERS VOLTAGE 50 to 800 Volts CURRENT 1.0 Ampere , 4.0 VDC November 4,2011-REV.06 PAGE . 1 1E1 SERIES RATING AND CHARACTERISTIC CURVES 100 , ,2011-REV.06 PAGE . 2 1E1 SERIES Part No_packing code_Version 1E1 _AX_00001 1E1 _AX_10001 1E1 _AY_00001 1E1 _AY_10001 1E1 _B0_00001 1E1 _B0_10001 1E1 _R2_00001 1E1 _R2_10001 For example : RB500V , ) 2nd Code HF or RoHS 1st Code 2nd~5th Code U D PAGE . 3 1E1 SERIES Disclaimer Reproducing


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PDF MIL-S-19500/228. 2002/95/EC MIL-STD-750, 2011-REV
1997 - Not Available

Abstract: No abstract text available
Text: ) 1E-2 1E-1 1E+0 0.01 1E-3 1E-2 1E-1 =tp/T 1E+0 1E+1 tp 1E+2 , . IR(µA) IR(µA) 1E+4 VR=30V 1E+2 1E+3 Tj=100°C 1E+1 1E+2 1E+1 1E+0 Tj=50°C 1E+0 Tj=25°C 1E-1 1E-1 Tj(°C) VR(V) 1E-2 0 5 10 1E-2 15 20 25 30 , ) 5E-1 10 F=1MHz Tj=25°C 1E-1 5 Tj=100°C 1E-2 Tj=50°C Tj=25°C 2 1E-3 VFM(V


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PDF BAT54 BAT54S BAT54A BAT54C 250mWatt, 30Volt OT-23
1999 - pvi5013

Abstract: pvg612 failure rate PVA/D33
Text: (uA) 1E+2 1E+1 1E+0 1E-1 1E-2 1E-3 1E-4 10 20 Initial Value OFF-STATE LEAKAGE STABILITY SPEC , HOURS 1000 IROUT (uA) 1E+2 1E+1 1E+0 1E-1 1E-2 1E-3 1E-4 1E-5 1E-6 1E-7 10 OFF-STATE LEAKAGE , ) 1E+3 1E+2 1E+1 1E+0 1E-1 1E-2 1E-3 10 Initial Value OFF-STATE LEAKAGE STABILITY HOURS IPU (mA , HOURS IROUT (uA) 1E+2 1E+1 1E+0 1E-1 1E-2 1E-3 1E-4 1E-5 10 Initial Value HOURS IPU (mA) 12 10 8 6 , ) 1E+1 1E+0 1E-1 OFF-STATE LEAKAGE STABILITY RATIO(mA/mA) 340 300 260 PULSED CURRENT GAIN S


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PDF PVG612 PVI5013R PVI5100 PVO402P PVT322 PVT412L PVT422 PVT422P pvi5013 pvg612 failure rate PVA/D33
1999 - STPS140Z

Abstract: No abstract text available
Text: 0.5 4 3 = 0.2 Ta=25°C 1E-1 2 = 0.1 Ta=60°C T 1 IM Single pulse t t(s) =0.5 0 1E-3 =tp/T tp(s) 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical value). 1E-2 1E-2 1E-1 1E+0 1E+1 tp 5E+1 , =25°C] IR(mA) 5E+3 5E+1 VR=40V 1E+1 Tj=150°C 1E+0 1E+3 Tj=100°C 1E+2 Tj=70°C 1E-1 1E+1 1E-2 1E-3 1E+0 Tj=25°C VR(V) 1E-4 0 5 10 15 20 Tj(°C) 25


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PDF STPS140Z OD123 OD123, STPS140Z
1997 - Not Available

Abstract: No abstract text available
Text: =50°C 0.10 Ta=100°C T Single pulse t δ=0.5 tp(s) t(s) 1E-2 1E-1 1E+0 0.01 1E-3 1E-2 1E-1 www.mccsemi.com δ=tp/T 1E+0 1E+1 tp 1E+2 MCC BAT54 thru , Tj=100°C 1E+1 1E+2 1E+1 1E+0 Tj=50°C 1E+0 Tj=25°C 1E-1 1E-1 Tj(°C) VR , =25°C 1E-1 5 Tj=100°C 1E-2 Tj=50°C Tj=25°C 2 1E-3 VFM(V) VR(V) 1 75 1 2


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PDF BAT54 BAT54S BAT54A BAT54C 250mWatt, 30Volt OT-23
2006 - Not Available

Abstract: No abstract text available
Text: 2000 1E2 2500 1E2 1E3 1E 1E1 4 1E4 1E1 500 400 200 tp 1E2 100 50 Hz , inusoida l pulse T = 40°C C tp 1E1 1E1 50 Hz 1E3 S 303SS T eries S inusoida l p ulse , 1500 2500 1E1 S 303SS T eries T ezoid al p ulse rap T = 40°C C d i/ dt = 50A/ µs 1E0 1E1 1E2 50 Hz 500 1000 1500 1E2 100 200 2000 1E4 1E1 1E4 1E1 1E3 , ohms Cs = 0.47 µF V D = 80% VDRM 1500 2000 1E1 100 50 Hz 500 1000 1E2 200


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PDF I25245 ST303SPbF ST303S O-209AE O-118) 303SSeries
2005 - k 275 varistor

Abstract: No abstract text available
Text: 1E-4 1E-3 1E-2 1E-1 CURRENT (A) 1E+0 1E+1 1E+2 1E+3 V/I CHARACTERISTIC, 50 TO , 10 1E-5 1E-4 1E-3 1E-2 1E-1 CURRENT (A) 1E+0 1E+1 1E+2 1E+3 V/I , voltage 100 .250. .200. .170. .140. .110. 10 1 1E-5 1E-4 1E-3 1E-2 1E-1 CURRENT (A) 1E+0 1E+1 1E+2 1E+3 Document Number: 29082 Revision: 11-Apr-05 For technical questions , .600. .500. max. clamping voltage 1000 100 10 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0


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PDF 2002/95/EC 2002/96/EC to10000 11-Apr-05 k 275 varistor
1999 - STPS160A

Abstract: sma ed diode smb marking stmicroelectronics st smb package marking STPS160U
Text: 1E-3 1E-2 IM 1 t 1E-1 1E+0 Ta=100°C t t(s) =0.5 0 1E-3 1E-2 1E-1 , 0.5 0.4 0.3 =0.2 0.2 =0.1 0.1 tp(s) Single pulse 0.0 1E-2 1E-1 1E+0 1E+1 Zth(j-a)/Rth , 0.2 =0.1 0.1 tp(s) Single pulse 0.0 1E-2 1E-1 1E+0 T =tp/T 1E+2 tp 1E+3 Fig , tp 1E+1 1E+2 Fig. 6: Junction capacitance versus reverse voltage applied (typical values) C(pF) 1E+3 200 F=1MHz Tj=25°C Tj=100°C 100 1E+2 Tj=75°C 50 1E+1 1E+0 1E-1


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PDF STPS160A/U DO-214AC) STPS160A DO-214AA) STPS160U STPS160A sma ed diode smb marking stmicroelectronics st smb package marking STPS160U
2002 - X00602MA

Abstract: X00602MA-5AL2 X0602ma X0602 X0602ma a 2al2 X00602MA 1AA2 5AL2 X006 x0602m
Text: temperature. 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of holding , 140 0.0 1E-2 Rgk(k) 1E-1 1E+0 1E+1 1E+2 3/5 X00602MA Fig. 6: Relative , =1k] dV/dt[Cgk]/dV/dt[Rgk=1k] 1E+2 20 1E+1 10 5 1E+0 1E-1 2 Rgk(k) 1E-2 1E-2 1E-1 Cgk(nF) 1E+1 1E+0 Fig. 8: Surge peak on-state current versus number of cycles. 10 9 , characteristics (maximum values). ITM(A) 1E+1 Tj max.: Vto = 0.85V Rd = 245m 1E+0 Tj = Tjmax. Tj = 25


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PDF X00602MA X00602MA X00602MA-5AL2 X0602ma X0602 X0602ma a 2al2 X00602MA 1AA2 5AL2 X006 x0602m
1997 - BAT54S KL4

Abstract: BAT54c kl3 l43 BAT54S kl1 kl1 diode marking ld3 kl3 diode l4p diode KL4 SOT-23 kl2 marking transistor KL3
Text: Ta=100°C T Single pulse t =0.5 tp(s) t(s) 1E-2 1E-1 1E+0 0.01 1E-3 1E-2 1E-1 =tp/T 1E+0 1E+1 tp 1E+2 www.mccsemi.com Revision: 5 2004/10/06 MCC , =30V 1E+2 1E+3 Tj=100°C 1E+1 1E+2 1E+1 1E+0 Tj=50°C 1E+0 Tj=25°C 1E-1 1E-1 Tj(°C , =25°C 1E-1 5 Tj=100°C 1E-2 Tj=50°C Tj=25°C 2 1E-3 VFM(V) VR(V) 1 75 1 2 5


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PDF BAT54 BAT54S BAT54A BAT54C 250mWatt, 30Volt OT-23 BAT54S KL4 BAT54c kl3 l43 BAT54S kl1 kl1 diode marking ld3 kl3 diode l4p diode KL4 SOT-23 kl2 marking transistor KL3
1997 - 200AB

Abstract: ST223C
Text: 3000 5000 10000 1E2 1E1 400 200 1000 500 tp 1E2 1E3 ST223C.C Series Sinusoidal pulse TC = 40°C 5000 tp 10000 1E4 1E1 1E4 1E1 ST223C.C Series Sinusoidal pulse , 1E1 1E1 1E2 1E3 tp 1E4 1E1 1E4 1E1 1E2 di/dt = 50A/µs 1E3 1E4 Pulse , °C di/dt = 100A/µs tp 1E1 1E1 1000 3000 5000 1E2 1500 1E2 1E3 ST223C.C Series Trapezoidal pulse TC = 55°C 10000 tp 1E4 1E1 1E4 1E1 1E2 Pulse Basewidth (µs


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PDF I25174 ST223C. O-200AB 10ohms; 10ohms 200AB ST223C
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