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2004 - 16N60B2D

Abstract: No abstract text available
Text: . +150 150 -55 . +150 V V V V A A A A A W °C °C °C ISOPLUS 220TM (IXGC) E153432 G C E , 0.55/5 Nm/lb.in. 2500 300 2 V °C g Features DCB Isolated mounting tab UL recognized ( E153432 ) Meets


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PDF 16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 220TM E153432 405B2 16N60B2D
2011 - Not Available

Abstract: No abstract text available
Text: Preliminary Technical Information PolarPTM Power MOSFET (Electrically Isolated Tab) P-Channel Enhancement Mode Avalanche Rated IXTC36P15P IXTR36P15P VDSS ID25 RDS(on) = -150V = - 22A 120m ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1M Continuous Transient , (IXTC) E153432 G D S Isolated G = Gate S = Source D = Drain Features z 1.6mm


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PDF IXTC36P15P IXTR36P15P -150V ISOPLUS247 E153432 ISOPLUS220 338B2
2007 - E153432

Abstract: isoplus247 IXTC36P15P
Text: Advance Technical Information PolarHTTM Power MOSFET IXTC36P15P IXTR36P15P VDSS ID25 RDS(on) (Electrically Isolated Tab) ISOPLUS220 (IXTC) E153432 P-Channel Enhancement Mode Avalanche Rated G D S = -150 V = -22 A 120 m ISOPLUS247 (IXTR) E153432 G Isolated back surface Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C - 150 TJ = 25°C to 175°C; RGS = 1 M - 150 Continuous ± 20 V VGSM Transient ± 30 V


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PDF IXTC36P15P IXTR36P15P ISOPLUS220 E153432 ISOPLUS247 338B2 E153432 isoplus247 IXTC36P15P
2004 - 16N60

Abstract: 16N60C2D1 IXGC16N60C2D1 16N60C2
Text: surface* C = Collector DCB Isolated mounting tab UL recognized ( E153432 ) Meets TO-273 package , Symbol ISOPLUS 220TM (IXGC) E153432 Advantages nA 3.0 Uninterruptible power supplies (UPS


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PDF 16N60C2 16N60C2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 065B1 728B1 123B1 728B1 16N60 16N60C2D1 16N60C2
2004 - 16N60

Abstract: IXGC16N60B2D1
Text: TC = 25°C 63 W ISOPLUS 220TM (IXGC) E153432 -55 . +150 °C TJM 150 °C , Isolated back surface* C = Collector Features DCB Isolated mounting tab UL recognized ( E153432


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PDF 16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60B2D1 220TMA/ 405B2 16N60
2004 - 16N60

Abstract: 16N60B2 16N60B2D IXGC16N60B2D1 E153432
Text: TC = 25°C 63 W ISOPLUS 220TM (IXGC) E153432 TJ -55 . +150 °C TJM 150 °C , Isolated back surface* C = Collector Features DCB Isolated mounting tab UL recognized ( E153432


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PDF 16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60B2D1 220TM0 405B2 16N60 16N60B2 16N60B2D E153432
2004 - 16N60C2D1

Abstract: 16n60c2 16N60
Text: -55 . +150 150 -55 . +150 V V V V A A A A A ISOPLUS 220TM (IXGC) E153432 G C E , Isolated mounting tab UL recognized ( E153432 ) Meets TO-273 package Outline High current handling capability


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PDF 16N60C2 16N60C2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 220TM E153432 065B1 728B1 16N60
2011 - Not Available

Abstract: No abstract text available
Text: Preliminary Technical Information PolarPTM Power MOSFET VDSS ID25 IXTC36P15P IXTR36P15P = -150V = - 22A Ω ≤ 120mΩ (Electrically Isolated Tab) RDS(on) P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C -150 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ -150 , ISOPLUS247 2 5 g g D Isolated S ISOPLUS220 (IXTC) E153432 G D S G = Gate S


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PDF IXTC36P15P IXTR36P15P -150V ISOPLUS247 E153432 338B2
2006 - 36150A

Abstract: E153432 62N15 ISOPLUS247 62N15P 734B2
Text: IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 31 A, Note 1 ISOPLUS220 (IXTC) E153432 , ) E153432 V 5.0 D l Silicon chip on Direct-Copper-Bond substrate - High power dissipation -


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PDF 62N15P 405B2 734B2 36150A E153432 62N15 ISOPLUS247 62N15P 734B2
2006 - Not Available

Abstract: No abstract text available
Text: Maximum Ratings ISOPLUS220 (IXTC) E153432 G D S Isolated back surface ISOPLUS247 (IXTR) E153432 TJ ≤150° C, RG = 10 Ω PD TC = 25° C TJ TJM Tstg TL 1.6 mm (0.062 in.) from


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PDF 62N15P 405B2 734B2
2004 - 16N60C2D1

Abstract: 16N60C2 E153432 IXGC16N60C2D1
Text: Isolated back surface* C = Collector DCB Isolated mounting tab UL recognized ( E153432 ) Meets TO , ISOPLUS 220TM (IXGC) E153432 Advantages nA 3.0 Uninterruptible power supplies (UPS


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PDF 16N60C2 16N60C2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 405B2 16N60C2D1 16N60C2 E153432
2004 - 36n50P

Abstract: ISOPLUS247
Text: Isolated back surface* ISOPLUS247 (IXFR) E153432 G TJ TJM Tstg TL ISOPLUS220 (IXFC) E153432 S Isolated back surface D = Drain Features International standard isolated packages


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PDF 36N50P 36n50P ISOPLUS247
2006 - 20N80

Abstract: ISOPLUS247 G-1000C
Text: 0 V RDS(on) V D Isolated back surface S ISOPLUS247TM (IXFR) E153432 Isolated , ) E153432 nA 25 1 A mA Advantages Easy assembly 500 m Space savings AC motor


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PDF 20N80P 8-23-06B 20N80 ISOPLUS247 G-1000C
2000 - IXDR30N120

Abstract: 30N120 50 a diode 600v high R30N120
Text: IXDR 30N120 D1 VCES IC25 IXDR 30N120 High Voltage IGBT with optional Diode ISOPLUSTM package VCE(sat) typ = 1200 V = 50 A = 2.4 V (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C C G ISOPLUS 247TM E153432 G G C E E Isolated Backside* E IXDR 30N120 IXDR 30N120 D1 G = Gate C = Collector E = Emitter *Patent pending , controlled - fast recovery epitaxial diode Epoxy meets UL 94V-0 Isolated and UL registered E153432 tSC


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PDF 30N120 30N120 247TM E153432 IXDR30N120 IXDR30N120 50 a diode 600v high R30N120
2004 - diode 439

Abstract: 30N120 IXDR30N120 R30N120
Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE(sat) typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol Conditions VCES TJ = 25°C to 150°C 1200 V , UL registered E153432 Advantages Characteristic Values (TJ = 25°C, unless otherwise specified


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PDF 30N120 30N120 247TM E153432 IXDR30N120 diode 439 IXDR30N120 R30N120
2006 - IXDR30N120

Abstract: 30N120 5027A R30N120 30n120d1 MJ10
Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE(sat) typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol Conditions VCES TJ = 25°C to 150°C 1200 V , UL registered E153432 Advantages Characteristic Values (TJ = 25°C, unless otherwise specified


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PDF 30N120 30N120 247TM E153432 IXDR30N120 IXDR30N120 5027A R30N120 30n120d1 MJ10
2006 - Not Available

Abstract: No abstract text available
Text: ) E153432 G D Isolated back surface S ISOPLUS247TM (IXFR) E153432 TJ ≤ 150°C, RG = 3 â


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PDF 20N80P 8-23-06B
2006 - 30N60P

Abstract: ISOPLUS247 c5125
Text: V RDS(on) V D Isolated back surface S ISOPLUS247TM (IXFR) E153432 Isolated , ) E153432 nA 25 500 A A Advantages Easy assembly 250 m Space savings AC motor


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PDF 30N60P 150olts 30N60P ISOPLUS247 c5125
2006 - Not Available

Abstract: No abstract text available
Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE(sat) typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol Conditions VCES TJ = 25°C to 150°C 1200 V , epitaxial diode • Epoxy meets UL 94V-0 • Isolated and UL registered E153432 2.4 0644 VISOL


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PDF 30N120 30N120 247TM E153432 IXDR30N120
2000 - 34N80

Abstract: 34N8
Text: 247TM E153432 G D S Isolated backside* D = Drain G = Gate S = Source * Patent pending , /ns ISOPLUS 247TM E153432 G D S Isolated backside* D = Drain G = Gate S = Source * Patent


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PDF ISOPLUS247TM 34N80 247TM E153432 34N8
isoplus

Abstract: isoplus ixys mounting copper thermal SIL-PAD ISOPLUS247 IXFC14N60P IXFP14N60P IXTL2x240N055T IXTL2X200N085T
Text: superior thermal performance ( E153432 ). · Improves temperature and power cycling capability. · Cost , performance ( E153432 ). · Improves temperature and power cycling capability. · Cost effective clip mounting


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PDF IXTL2x240N055T IXTL2x220N075T IXTL2x200N085T IXTL2x180N10T 2x240 2x220 2x200 2x180 2x140 2x120 isoplus isoplus ixys mounting copper thermal SIL-PAD ISOPLUS247 IXFC14N60P IXFP14N60P IXTL2x240N055T IXTL2X200N085T
2006 - Not Available

Abstract: No abstract text available
Text: 3 5 g g ISOPLUS220TM (IXFC) E153432 G G TC = 25° C TJ TJM Tstg TL 1.6 mm , = 125° C S ISOPLUS247TM (IXFR) E153432 TJ ≤150° C, RG = 4 Ω PD D Silicon chip


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PDF 36N50P 12-06-05-C
2006 - isoplus ixys mounting

Abstract: isoplus IXTF230N085T IXTF250N075T IXTF200N10T IXFP14N60P IXFC14N60P ISOPLUS247 SIL-PAD IXTF280N055T
Text: Motor drives · Provides 2500V, UL recognized isolation with superior thermal performance ( E153432 ). , superior thermal performance ( E153432 ). · Improves temperature and power cycling capability. · Cost


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PDF IXTF280N055T IXTF250N075T IXTF230N085T IXTF200N10T E153432) IXFP14N60P 2000TM IXFC14N60P ISOPLUS247TM com/AN505 isoplus ixys mounting isoplus IXTF230N085T IXTF250N075T IXTF200N10T IXFC14N60P ISOPLUS247 SIL-PAD IXTF280N055T
2003 - DSEE15-06CC

Abstract: No abstract text available
Text: DSEE15-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRM VRRM V 600 300 ISOPLUS 220 E153432 V Symbol Type DSEE15-06CC 1 Conditions 2 3 Maximum Ratings TC = 115°C; rectangular, d = 0.5 35 15 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 110 A EAS TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH 0.8 mJ


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PDF DSEE15-06CC ISOPLUS220TM E153432 5-03A DS98827B ISOPLUS220 DSEE15-06CC
600 Va ups

Abstract: rsm ah
Text: registered E153432 Applications • Antiparallel diode for high frequency switching devices • Antisatu


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PDF 9-06BR 25ery E153432 600 Va ups rsm ah
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