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PL130-09QI Microchip Technology Inc Clock Buffer High Speed Translator Buffer to LVDS
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E 13009 L Datasheets Context Search

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transistor E 13009

Abstract: all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR D 13009 13009 2 transistor 13009
Text: Rev. B FAIRCHILD S E M IC O N D U C T O R ^ 1 9 9 9 Fairchild S em iconductor Corporation KSE13008/ 13009 NPN SILICON TRANSISTOR BAS E EM ITTER S ATU R A TIO N V O LTA G E DC CURRENT GAIN , KSE13008/ 13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed , CHARACTERISTICS Characteristic (Tc =25°C) Symbol V ceo( sus) Iebo h FE VC E (sat) Test Conditions lc = 10mA , OUTPUT CAPACITANCE TURN ON TIME Ü.1 V,W V 1. C O LL E C T O R BASE VO LT AG E D.a OS 1


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PDF KSE13008/13009 KSE13008 KSE13009 transistor E 13009 all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR D 13009 13009 2 transistor 13009
2000 - e13009

Abstract: Fairchild e13009 transistor E 13009 E13009 F e 13009 f e13008 E-13009 fairchild e13009 application E13009 2 fairchild 13009
Text: KSE13008/ 13009 KSE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · , cycle2% ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSE13008/ 13009 VBE , . Safe Operating Area Rev. A, February 2000 KSE13008/ 13009 Typical Characteristics (Continued , Semiconductor International Rev. A, February 2000 KSE13008/ 13009 Package Demensions TO-220 4.50 , Fairchild Semiconductor International Rev. E Fairchild Semiconductor


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 e13009 Fairchild e13009 transistor E 13009 E13009 F e 13009 f e13008 E-13009 fairchild e13009 application E13009 2 fairchild 13009
2009 - transistor E 13009

Abstract: 13009 H p 13009 transistor d 13009 13009 L all transistor 13009 e 13009 l ST13009 E 13009 e 13009 f
Text: (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , -220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q , A 15 VCE = 5 V 31 26 Group L Group H IC = 8 A _ _ DC current gain 0.85 0.9 , L = 200 µH 110 ns see Figure 9 IC = 5 A Inductive load ts IB1 = - IB2 = 1.6 A


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PDF ST13009 O-220 transistor E 13009 13009 H p 13009 transistor d 13009 13009 L all transistor 13009 e 13009 l ST13009 E 13009 e 13009 f
2009 - transistor E 13009 l

Abstract: No abstract text available
Text: (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , TO-220 mechanical data Dim A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q , 60 L = 200 µH Fall time V V VCE = 5 V IC = 5 A Inductive load V V V V 1.2 1.6 IB = 1.6 A Group L Group H IC = 8 A _ _ DC current gain 0.85 0.9 1.25 2.5 IB =


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PDF ST13009 O-220 transistor E 13009 l
2007 - transistor E 13009

Abstract: 13009 H e 13009 f ST13009 ST-13009 13009 l E 13009 L 13009L transistor d 13009 p 13009
Text: (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L , Group L Group H IC = 8 A _ _ IC = 5 A Inductive load µA µA 400 IC = 5 A Base-emitter , -2 A 1.6 2.5 µs 60 L = 200 µH 110 ns see Figure 9 Inductive load ts


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PDF ST13009 O-220 transistor E 13009 13009 H e 13009 f ST13009 ST-13009 13009 l E 13009 L 13009L transistor d 13009 p 13009
Not Available

Abstract: No abstract text available
Text: L ENTI RE DO NOT L I N E S I N D I C A T I N G E V E R Y LI VE C A V I T I E S E X C E P T EN D CAVI TI ES, S T A R T I N G EROM . 4 9 5 MAX [1 2 . 5 7 ] & APVD B E R Y L L I U M C O P P E R ( b E c U ) OR C O P P E R -N IC K E L -S IL IC O N (CuNiSi). C ON T AC T EI NI SH: . 0 0 0 0 5 0 GOLD IN T I N - L E A D ON S O L D E R TAILS, OVER D D N W 21SEP09 REV , ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL


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PDF 31MAR2000
j 13009

Abstract: J 13009 - 2 e 13009 f mj 13009 E 13009 L p 13009 D 13009 K 13009R
Text: S> 3 ^ ^ IT : » H l ^ ^ 7 ^ ^ e in . 3 /aml¿X _ L E R I A L : H 0 U 5 I NG : G L A S S 'OS . a B H J P /N ^ F I L L E D 66NYL0N CUL 9 4 V - 0 ) B L A C K . CONTACT:PHOSPHOR-BRONZE RETENTION L E G : B R A S S . F I N I S H : C O N T A C T : 0 . 3pimMIN- Au A T C O N T A C T A R E A 1 jjm MIN' T I N L E A D A T T I N E , O V E R Ni R E T E N T I O N L E G : 1 jjmMIN` T I N L E


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PDF J-12583 30-JAN j 13009 J 13009 - 2 e 13009 f mj 13009 E 13009 L p 13009 D 13009 K 13009R
2009 - transistor j 13009-2

Abstract: 13009-2 transistor 13009-2 j 13009-2 ZBSC-8-82-S D 13009 K transistor E 13009 ZBSC-8-82 M1149 e 13009 l
Text: . Electrical Specifications ISOLATION (dB) FREQ. RANGE (MHz) Outline Drawing L Typ. Min. fL-fU 10-800 28 M Typ. Min. 25 26 L = low range [fL to 10 fL] PHASE UNBALANCE (Degrees) AMPLITUDE UNBALANCE (dB) L M U Max. Max. Max. L M U Max. Max. Max. INSERTION LOSS (dB) ABOVE 9.0 dB U Typ. Min. 22 25 20 L Typ. Max. M Typ. Max. U Typ. Max. 0.6 1.0 , 1.62 41.15 C .70 17.78 G .187 4.75 H 3.00 76.20 J .35 8.89 D E .250 5.75


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PDF ZBSC-8-82+ UU1268 ZBSC-8-82-S+ 2002/95/EC) M114913 ED-13009/2 transistor j 13009-2 13009-2 transistor 13009-2 j 13009-2 ZBSC-8-82-S D 13009 K transistor E 13009 ZBSC-8-82 M1149 e 13009 l
2006 - Not Available

Abstract: No abstract text available
Text: federal and defense communication · communication system FREQ. RANGE (MHz) fL-fU 10-800 L Typ. Min. 28 , . 26 22 U Typ. Min. 25 20 PHASE UNBALANCE (Degrees) L M U Max. Max. Max. 2.0 4.0 9.0 AMPLITUDE UNBALANCE (dB) L M U Max. Max. Max. 0.2 0.3 0.5 L Typ. Max. 0.6 1.0 M Typ. Max. 0.9 1.5 U Typ. Max. 1.8 2.8 L = low range [fL to 10 fL] M = mid range [10 fL to fU/2] U = upper range [fU/2 to fU , 8.89 D E .250 5.75 6.35 146.05 F .810 20.57 H 3.00 76.20 K .660 16.76 wt grams 300


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PDF ZBSC-8-82+ UU1268 ZBSC-8-82-S+ M114913 ED-13009/2
2008 - Not Available

Abstract: No abstract text available
Text: . RANGE (MHz) fL-fU 10-800 L Typ. Min. 28 25 + RoHS compliant in accordance with EU Directive (2002/95 , U Typ. Min. 25 20 Outline Drawing INSERTION LOSS (dB) ABOVE 9.0 dB L Typ. Max. 0.6 1.0 M Typ. Max. 0.9 1.5 U Typ. Max. 1.8 2.8 PHASE UNBALANCE (Degrees) L M U Max. Max. Max. 2.0 4.0 9.0 AMPLITUDE UNBALANCE (dB) L M U Max. Max. Max. 0.2 0.3 0.5 L = low range [fL to 10 fL] M = mid range , 4.75 B 1.62 41.15 H 3.00 76.20 C .70 17.78 J .35 8.89 D E .250 5.75 6.35 146.05 K .660 16.76 F .810


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PDF ZBSC-8-82+ UU1268 ZBSC-8-82-S+ M114913 ED-13009/2
2012 - P13009

Abstract: PL130-09 QFN16L
Text: PACKAGE COMPLIANT) 8 PIN SOP ( dimensions in mm ) SOP-8L Symbol A A1 B C D E H L e Min. 1.47 0.10 0.33 0.19 4.80 3.80 5.80 0.38 Max. 1.73 0.25 0.51 0.25 4.95 4.00 6.20 1.27 1.27 BSC A A 1 B e C L D E H , temperature range PART NUMBER PL 130-09 X C PART NUMBER TEMPERATURE C=COMMERCIAL (0°C to 70


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PDF PL130-09 100mV PL130-09 P13009 QFN16L
2004 - 1044-06

Abstract: No abstract text available
Text: D E F G H J .500 .500 .180 .100 .080 .115 .060 .040 .540 12.700 12.700 4.572 2.540 2.032 2.921 1.524 1.016 13.716 K .060 1.524 L M N P Q R S T .070 1.778 .100 .135 .135 .115 .140 .070 .150 2.540 3.429 , 129.17 130.09 3.40 3.15 2.76 2.21 2.97 2.68 2.29 1.75 2.19 1.60 0.76 -0.87 -37.12 -36.84


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PDF ROS-EDR5368 Pu1543 1044-06
2006 - 12533 6

Abstract: No abstract text available
Text: Drawing E 12 11 10 9 PCB Land Pattern J D TYP L K SQ TYP Demo Board MCL P/N: TB-10 Suggested PCB , PATTERN FREE OF SOLDER MASK Outline Dimensions ( inch mm ) A B C D E F G H J K L M N P Q R S T wt , -117.69 -119.42 -122.16 -123.85 -125.33 -128.78 - 130.09 -133.14 -134.80 -137.64 -139.36 *at 25oC unless


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PDF ROS-2510-219+ CK605 2002/95/EC) 10KHz 100KHz 12533 6
2006 - Not Available

Abstract: No abstract text available
Text: METALLIZATION SOLDER RESIST Outline Dimensions ( inch mm ) A B C D E F G H J K L M N P Q R S T wt. .500 .500 , -123.85 -125.33 -128.78 - 130.09 -133.14 -134.80 -137.64 -139.36 *at 25oC unless mentioned otherwise


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PDF ROS-2510-219+ CK605 2002/95/EC)
D 13009 K

Abstract: J 13009 - 2 E 13009 L TR 670 9509
Text: 8 DRAWING MADE IN T H I R D ANGLE P R O JECT IO N 7 R E L E A S E D FOR P U B L I C A T I O N , . BOARD AFTER A P L L I C A T I ON DUE TO MYLAR THICKNESS. A L L P A R T S A S S E M B L E D IN M E X I C O MUST BE S T A M P E D " A S S Y IN M E X I C O " . WORD " M E X I C O " C A N B E S U B S T I T U T E D O N L Y W H E R E P A R T S I Z E P R O H I B I T S " A S S Y IN M E X I C , PART NO SECTION Z-Z DO NOT S C A L E P R I N T . UNLESS S P E C IF IE D D I M E N S I O N S


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PDF QQ-N-290 amp34723/ D 13009 K J 13009 - 2 E 13009 L TR 670 9509
BP28-12

Abstract: e 13009 f
Text: voltage C ha rg e 1 Discharge 100 %(0.05CA x 20h) 50 %(0.05CA x 10h) 2 Constant voltage charging , Charge current 28A 0 0 1 2 3 5 10 vo lu m e 0.03 0 8.0 Charge voltage , 84.00 57.43 32.08 16.88 9.90V Terminal I1 1012.3 1300.9 856.5 658.8 382.6


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PDF BP28-12 1400mA 50volts) 2660mA 059-C BP28-12 e 13009 f
transistor E 13009

Abstract: transistor d 13009 n752 E13009 E 13009 E 13009 TRANSISTOR motorola J 13009 - 2 e 13009 p D 13009 K transistor switch 13009
Text: °C Operating and Storage Junction Temperature Range T H E R M A L C H A R A C T E R I S T IC S , , MJE13009 T- 33 E L E C T R I C A L C H A R A C T E R I S T IC S (Tc = 25°C unless otherwise noted , , Ig = 1 Ade) (le 5 5 8 Ade, lg * 1,6 Ade) I l e * 8 Ade, le 8 5 1.6 Ade, T c - 100°C) D Y N A M IC C H , z) Output Capacitance (V c b · 10 Vdc, l £ - 0. f = 0 1 M H z) S W IT C H IN G C H A R A C T E R IS T , (Table 1, Figure 13) Voltage Storage Time Crosiovar Tim s H e " 8 A, V C| amp = 300 Vdc, l B , = 1.6 A, V


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PDF ti3ti725M MJE13008 MJE13009 transistor E 13009 transistor d 13009 n752 E13009 E 13009 E 13009 TRANSISTOR motorola J 13009 - 2 e 13009 p D 13009 K transistor switch 13009
Not Available

Abstract: No abstract text available
Text: - L IN E V E R T IS O C K E T S Data Sheet No. Features: ✓ 13009 I 5 1 3 /5 0 3 /0 5 1 3 /0 5 0 3 5 1 8 /5 0 8 /0 5 1 8 /0 5 0 8 DIP & SIP S O C K E T S DIP St S IP S O C K E T S , : +44 1908 260008 Papendrecht, Holland T E L :+31 78 615 9465 FAX:+31 786154311 , Styles: C 8 4 /C 9 3 C 81/C 91 & C 8 2 /C 9 2 DIP S O C K E T S D IP S O C K E T S 0% Data Sheet No. 12001 511/501//0501/0511 DIP & S IP S O C K E T S 5118/6008 KEYED SOCKET


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PDF
2004 - Not Available

Abstract: No abstract text available
Text: D E F G H J .500 .500 .180 .100 .080 .115 .060 .040 .540 12.700 12.700 4.572 2.540 2.032 2.921 1.524 1.016 13.716 K .060 1.524 L M N P Q R S T .070 1.778 .100 .135 .135 .115 .140 .070 .150 2.540 3.429 , 114.67 118.36 121.65 124.72 127.52 130.09 132.45 134.67 136.77 138.74 140.61 142.38 144.07 145.63 147.13


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PDF ROS-ED9544/2
2512 pcb layout

Abstract: A14129
Text: D-S U B Co n n e c t o r s D-SUB Standard Solder pin ­ Angled ­ .370" 9.4 mm ­ Precision machined contacts ­ Plastic bracket Description Mounting styles: - with mounting bracket and Ø .118" 3 mm through-hole - with mounting bracket, grounding strap and 4-40 UNC or M3 threaded insert - with , C o n n e c t o r s D-SUB Standard ­ Mounting styles Solder pin ­ Angled ­ .370" 9.4 mm ­ , A 12969 X 164 A 12979 X 164 A 12989 X 164 A 12999 X 164 A 19139 X 164 A 13009 X 164 A 13019 X 164 A


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PDF E202784 2512 pcb layout A14129
2005 - transistor MJ 13009

Abstract: E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
Text: Page No. : 5/6 MICROELECTRONICS CORP. TO-247(TO-3P) Dimension G H A DIM A B C D E F G H I J K L M r1 Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None H MJ E 13009 D B r1 Date Code Control Code Note: Green label is used for pb-free packing 1 2 3 Pin Style: 1.Base 2.Collector 3.Emitter E M L C I Material: · Lead solder


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PDF HR200202 HMJE13009R HMJE13009R O-247 120ns Collector-Emitt120 183oC 217oC 260oC transistor MJ 13009 E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
2005 - E 13009

Abstract: transistor MJ 13009 transistor E 13009 e13009 mj 13009 transistor d 13009 D 13009 K tr 13009 J 13009 - 2 j 13009
Text: Page No. : 5/6 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E MJ E 13009 C D Date Code H M I K 3 G N 2 1 Tab O P , Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J L Min. 5.58 8.38 , 3-Lead TO-220AB Plastic Package HSMC Package Code: E Important Notice: · All rights are


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PDF HE200206 HMJE13009 HMJE13009 O-220AB 120ns 183oC 217oC 260oC E 13009 transistor MJ 13009 transistor E 13009 e13009 mj 13009 transistor d 13009 D 13009 K tr 13009 J 13009 - 2 j 13009
m2006

Abstract: ic 5772 b 11791
Text: A BSO LU T E MAXIMUM RATINGS (TA = 25°C, Z0 = 50 H unless otherwise noted) Rating Supply Voltages , V b ia s ELEC T RIC A L C H ARAC TERISTIC S (V Cc i . V c c a . Characteristics (1) Supply , 1 C2 RF OUT H f50 £2 V CC1 F Vbias + ° VCC2 +° -± '" l C1, C2 - 100 pF Chip , 21.204 20.538 19.624 19.094 18.334 17.594 16.880 16.127 15.438 14.796 14.165 13.555 13.009 12.515 12.004


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PDF MRFIC2006 MRFIC2004, m2006 ic 5772 b 11791
MCL 9603

Abstract: PL-012 ROS-2510-219 p 13009 21957 2539
Text: 9 14 INDEX L D TYP E P 40 Operating Temperature -55°C to 85°C Storage , E F G H J K L M N P Q R S T wt. .500 .500 .180 .100 .080 .115 .060 .040 .540 .060 , -137.4 -136.5 -137.0 361.5 507.5 606.7 851.6 1000.0 - 130.09 -133.14 -134.80 -137.64


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PDF ROS-2510-219+ CK605 2002/95/EC) MCL 9603 PL-012 ROS-2510-219 p 13009 21957 2539
NEC uPA 63 H

Abstract: NEC uPA 63 E 13009 L transistor d 13009 NEC uPA 63 a CL 2183 ic 4017 ic operation
Text: . TYPICAL PERFORMANCE CURVES(Ta= 25 TO TA L POW ER DISSIPATION v s. AM BIENT T EM P ER A TU R E C) C O L LEC T O R CU R R EN T v s. DC B A S E V O LTA G E I I CL § E , IC o 03 (ft (ft Q , Voltage, V be (V) C O L LEC T O R C U R R EN T v s. EMITTER V O LTAG E DC CU R R EN T GAIN v s. C O , ) Frequency, f (GHz) F E E D B A C K C A P A C IT A N C E v s. C O L LEC T O R TO B A S E V O LTAG E , CLASSIFICATION RANK Marking h FE FB R81 70 to 140 Value E X C L U S IV E N O R T H A M E R IC A N A G


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PDF UPA821TF NE856 UPA821TF mirrored72 UPA821TF-T1 24-Hour NEC uPA 63 H NEC uPA 63 E 13009 L transistor d 13009 NEC uPA 63 a CL 2183 ic 4017 ic operation
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