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Part Manufacturer Description Datasheet Download Buy Part
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158CN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158CN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1162IN#PBF Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver

Dual MOSFET 606 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - pks606

Abstract: EE25 transformer transistor prc 606 j PKS606Y schematic diagram for ac line voltage monitor diode led uv low side pwm drive optocoupler high side transformer optocoupler 8020 PKS603 6-0-6 TRANSFORMER
Text: PKS603- 606 PeakSwitchTM Family Enhanced, Energy-Efficient, Off-Line Switcher IC With Super , MOSFET , oscillator, high voltage switched current source for startup, current limit, and thermal , construction. June 2006 PKS603- 606 BYPASS (BP) DRAIN (D) REGULATOR 5.8 V LINE UNDER-VOLTAGE , MOSFET drain connection provides internal operating current for both start-up and steady-state operation , -8C) F Package (TO-262-7C) ENABLE/UNDER-VOLTAGE (EN/UV) Pin: This pin has dual functions: enable


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PDF PKS603-606 pks606 EE25 transformer transistor prc 606 j PKS606Y schematic diagram for ac line voltage monitor diode led uv low side pwm drive optocoupler high side transformer optocoupler 8020 PKS603 6-0-6 TRANSFORMER
2006 - Not Available

Abstract: No abstract text available
Text: PKS603- 606 PeakSwitch™ Family Enhanced, Energy-Efficient, Off-Line Switcher IC With Super , . PeakSwitch incorporates a 700 V power MOSFET , oscillator, high voltage switched current source for startup , standard varnished transformer construction. April 2006 PKS603- 606 BYPASS (BP) DRAIN (D , (TO-220-7C) DRAIN (D) Pin: The power MOSFET drain connection provides internal operating current , (EN/UV) Pin: This pin has dual functions: enable input and line under-voltage sense. During normal


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PDF PKS603-606
2006 - Not Available

Abstract: No abstract text available
Text: PKS603- 606 PeakSwitch™ Family Enhanced, Energy-Efficient, Off-Line Switcher IC With Super , . PeakSwitch incorporates a 700 V power MOSFET , oscillator, high voltage switched current source for startup , standard varnished transformer construction. March 2006 PKS603- 606 BYPASS (BP) DRAIN (D , (TO-220-7C) DRAIN (D) Pin: The power MOSFET drain connection provides internal operating current , (EN/UV) Pin: This pin has dual functions: enable input and line under-voltage sense. During normal


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PDF PKS603-606
2006 - Not Available

Abstract: No abstract text available
Text: PKS603- 606 TM PeakSwitch Family Product Highlights EcoSmart ­ Extremely Energy-Efficient · , V power MOSFET , oscillator, high voltage switched current source for startup, current limit, and , construction. March 2006 PKS603- 606 BYPASS (BP) REGULATOR 5.8 V LINE UNDER-VOLTAGE DRAIN (D , Functional Description DRAIN (D) Pin: The power MOSFET drain connection provides internal operating current , be externally supplied via a bias winding. ENABLE/UNDER-VOLTAGE (EN/UV) Pin: This pin has dual


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PDF PKS603-606
2012 - v6000

Abstract: No abstract text available
Text: FCP190N60 / FCPF190N60 N-Channel MOSFET March 2013 FCP190N60 / FCPF190N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 m Features · 650 V @TJ = 150°C · Max. RDS(on) = 199 m · Ultra low gate , tested Description ® ® SuperFET II MOSFET is Fairchild Semiconductor 's first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low , . Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and


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PDF FCP190N60 FCPF190N60 FCPF190N60 v6000
2011 - 50V 10A ultra fast diode

Abstract: No abstract text available
Text: FCP190N60 / FCPF190N60 N-Channel MOSFET January 2012 SuperFET® II FCP190N60 / FCPF190N60 600V N-Channel MOSFET Features · 650V @TJ = 150°C · Max. RDS(on) = 199m · Ultra low gate charge (typ , Description SuperFET®II is, Farichild's proprietary, new generation of high voltage MOSFET family that is , Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power , ) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) (f >1Hz) 20.2 12.7 60.6 400 4.0


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PDF FCP190N60 FCPF190N60 FCPF190N60 160pF) 50V 10A ultra fast diode
2012 - 50V 10A ultra fast diode

Abstract: No abstract text available
Text: FCP190N60 / FCPF190N60 N-Channel MOSFET SuperFET® II FCP190N60 / FCPF190N60 600V N-Channel MOSFET Features · 650V @TJ = 150°C · Max. RDS(on) = 199m · Ultra low gate charge (typ. Qg = 57nC) · Low , , Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge , Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25oC) - Derate , (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) (f >1Hz) 20.2 12.7 60.6 400 4.0 2.1 20 100 39 0.31


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PDF FCP190N60 FCPF190N60 FCPF190N60 160pF) 50V 10A ultra fast diode
2012 - fcpf190n60

Abstract: FCP190N60 50V 10A ultra fast diode fcp190 Dual MOSFET 606
Text: FCP190N60 / FCPF190N60 N-Channel MOSFET March 2012 SuperFET® II FCP190N60 / FCPF190N60 600V N-Channel MOSFET Features · 650V @TJ = 150°C · Max. RDS(on) = 199m · Ultra low gate charge (typ. Qg = 57nC , SuperFET®II is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an , Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation - , -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) (f >1Hz) 20.2 12.7 60.6 400 4.0 2.1 20


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PDF FCP190N60 FCPF190N60 FCPF190N60 160pF) 50V 10A ultra fast diode fcp190 Dual MOSFET 606
2011 - Not Available

Abstract: No abstract text available
Text: FCP190N60 / FCPF190N60 N-Channel MOSFET November 2011 FCP190N60 / FCPF190N60 600V N-Channel MOSFET Features · 650V @TJ = 150°C · Max. RDS(on) = 199m · Ultra low gate charge (typ. Qg = 57nC) · Low , Description SuperFETII is, Farichild's proprietary, new generation of high voltage MOSFET family that is , Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power , ) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) (f >1Hz) 20.2 12.7 60.6 400 4.0


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PDF FCP190N60 FCPF190N60 FCPF190N60 160pF)
SN146-1R0

Abstract: capacitor 1000uF 16V SN146 IRF FET McMaster-Carr schematic diagram PWM 12V 30a 1000uf, 6.3v electrolytic capacitor 18a sot23 1000uf, 16v electrolytic capacitor capacitor 1000uF/16V
Text: Design Selector Table .14 www.irf.com RD- 606 1 Introduction , reference design (see details on page 14). www.irf.com RD- 606 This chipset is operated at 400kHz , following equations are used to calculate the MOSFET power loss. Refer to the IRLR8713PBF and IRLR7843PBF , RD- 606 Deadtime losses: Eq (3): Ptd = VSD .I o .t d .Fsw Total FET losses: Eq (4): PFET _ , the normalized RDSON factor vs temperature extracted from the MOSFET datasheets. QSW is the FET


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PDF IRPP3637-18A 18Amp IR3637SPBF IRLR8713PBF IRLR7843PBF IR3637AS IRF8910 IRPP3637-12A 400kHz IR3637S SN146-1R0 capacitor 1000uF 16V SN146 IRF FET McMaster-Carr schematic diagram PWM 12V 30a 1000uf, 6.3v electrolytic capacitor 18a sot23 1000uf, 16v electrolytic capacitor capacitor 1000uF/16V
1994 - TPS1120

Abstract: TPS1120D TPS1120DR TPS1120DRG4 TPS1120Y SLVS0
Text: Lead 4 2GATE Figure 16. TPS1120 Dual MOSFET SO-8 Lead Frame APPLICATION INFORMATION 3 V or 5 V , TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST , OFFICE BOX 655303 · DALLAS, TEXAS 75265 1 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE , DALLAS, TEXAS 75265 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 , DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST 1995 electrical


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PDF TPS1120, TPS1120Y SLVS080A MIL-STD-883C, TPS1120 TPS1120D TPS1120DR TPS1120DRG4 TPS1120Y SLVS0
1994 - a476

Abstract: TPS1120 TPS1120D TPS1120DR TPS1120Y
Text: 1GATE Pad 1 Lead 3 2SOURCE MOSFET 2 Lead 4 2GATE Figure 16. TPS1120 Dual MOSFET SO-8 Lead , TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST , OFFICE BOX 655303 · DALLAS, TEXAS 75265 6­1 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE , DALLAS, TEXAS 75265 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A­ MARCH 1994 , DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST 1995 electrical


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PDF TPS1120, TPS1120Y SLVS080A MIL-STD-883C, TPS1120 a476 TPS1120D TPS1120DR TPS1120Y
1994 - Not Available

Abstract: No abstract text available
Text: 2DRAIN Lead 5 Figure 16. TPS1120 Dual MOSFET SO-8 Lead Frame APPLICATION INFORMATION 3 V or 5 , TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST , TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST 1995 , DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST 1995 absolute , , TEXAS 75265 3 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­


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PDF TPS1120, TPS1120Y SLVS080A MIL-STD-883C, TPS1120
1994 - TPS1120

Abstract: TPS1120D TPS1120DR TPS1120Y
Text: Lead 4 2GATE Figure 16. TPS1120 Dual MOSFET SO-8 Lead Frame APPLICATION INFORMATION 3 V or 5 V , TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST , OFFICE BOX 655303 · DALLAS, TEXAS 75265 1 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE , DALLAS, TEXAS 75265 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 , DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST 1995 electrical


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PDF TPS1120, TPS1120Y SLVS080A MIL-STD-883C, TPS1120 TPS1120D TPS1120DR TPS1120Y
1994 - TPS1120

Abstract: TPS1120D TPS1120DG4 TPS1120DR TPS1120DRG4 TPS1120Y slvs080
Text: Lead 4 2GATE Figure 16. TPS1120 Dual MOSFET SO-8 Lead Frame APPLICATION INFORMATION 3 V or 5 V , TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST , OFFICE BOX 655303 · DALLAS, TEXAS 75265 1 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE , DALLAS, TEXAS 75265 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 , DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST 1995 electrical


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PDF TPS1120, TPS1120Y SLVS080A MIL-STD-883C, TPS1120 TPS1120D TPS1120DG4 TPS1120DR TPS1120DRG4 TPS1120Y slvs080
1994 - TPS1120

Abstract: TPS1120D TPS1120DR TPS1120DRG4 TPS1120Y
Text: Lead 4 2GATE Figure 16. TPS1120 Dual MOSFET SO-8 Lead Frame APPLICATION INFORMATION 3 V or 5 V , TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST , OFFICE BOX 655303 · DALLAS, TEXAS 75265 1 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE , DALLAS, TEXAS 75265 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 , DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST 1995 electrical


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PDF TPS1120, TPS1120Y SLVS080A MIL-STD-883C, TPS1120 TPS1120D TPS1120DR TPS1120DRG4 TPS1120Y
1994 - TPS1120

Abstract: TPS1120D TPS1120DR TPS1120Y Dual MOSFET 606
Text: Lead 4 2GATE Figure 16. TPS1120 Dual MOSFET SO-8 Lead Frame APPLICATION INFORMATION 3 V or 5 V , TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST , OFFICE BOX 655303 · DALLAS, TEXAS 75265 1 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE , DALLAS, TEXAS 75265 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 , DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A ­ MARCH 1994 ­ REVISED AUGUST 1995 electrical


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PDF TPS1120, TPS1120Y SLVS080A MIL-STD-883C, TPS1120 TPS1120D TPS1120DR TPS1120Y Dual MOSFET 606
1994 - Not Available

Abstract: No abstract text available
Text: . TPS1120 Dual MOSFET SO-8 Lead Frame APPLICATION INFORMATION 3 V or 5 V 5V Microcontroller , TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 – REVISED , , TEXAS 75265 1 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 , €¢ DALLAS, TEXAS 75265 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH , 655303 • DALLAS, TEXAS 75265 3 TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS


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PDF TPS1120, TPS1120Y SLVS080A MIL-STD-883C, TPS1120
2014 - Not Available

Abstract: No abstract text available
Text: FCMT199N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance , superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET , high) with a low profile and small footprint (8x8 mm2). SuperFET II MOSFET in a Power88 package offers


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PDF FCMT199N60
2013 - Not Available

Abstract: No abstract text available
Text: FCPF190N60_F152 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance , . Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and , 25oC) 20 V/ns 100 MOSFET dv/dt V/ns 39 Power Dissipation TJ, TSTG Operating


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PDF FCPF190N60
2013 - Not Available

Abstract: No abstract text available
Text: FCP190N60_GF102 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low , MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV , Drain Current IDM Drain Current (Note 1) 60.6 A EAS Single Pulsed Avalanche Energy


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PDF FCP190N60 GF102
2014 - Not Available

Abstract: No abstract text available
Text: FCMT199N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance , superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET , high) with a low profile and small footprint (8x8 mm2). SuperFET II MOSFET in a Power88 package offers


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PDF FCMT199N60
2013 - Not Available

Abstract: No abstract text available
Text: FCP190N60_GF102 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 m Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for , higher avalanche energy. Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion , Avalanche Energy IAR FCP190N60_GF102 600 (Note 1) 60.6 A (Note 2) 400 mJ


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PDF FCP190N60 GF102
1998 - 220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Text: No file text available


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PDF Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
2012 - Not Available

Abstract: No abstract text available
Text: FCP190N60 / FCPF190N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low , MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV , > 1 Hz) - Continuous (TC = 25oC) 20.2 (Note 1) 20.2* 12.7* 60.6 A IDM Drain


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PDF FCP190N60 FCPF190N60
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