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Part Manufacturer Description Datasheet Download Buy Part
LT3485EDD-1#PBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-2#TR Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-0 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-1#TR Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-0#PBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-2 Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C

Discrete IGBTS Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Discrete IGBTS

Abstract: SG45N12T RG1425
Text: SG45N12T Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 4.7 , . 1200 o IGES typ. Unit V SG45N12T Discrete IGBTs (TJ=25oC, unless otherwise specified


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PDF SG45N12T O-247AD 150oC; 31MHz 125oC Discrete IGBTS SG45N12T RG1425
2004 - Discrete IGBTS

Abstract: tab ic SG45N12T
Text: SG45N12T Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 4.7 , 2 mA ±100 nA 2.5 V SG45N12T Discrete IGBTs (TJ=25oC, unless otherwise specified


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PDF SG45N12T O-247AD 150oC; 125oC Discrete IGBTS tab ic SG45N12T
Discrete IGBTS

Abstract: SG50N06DT SG50N06T MDA300
Text: SG50N06T, SG50N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F Symbol 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Characteristic Values Test Conditions


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PDF SG50N06T, SG50N06DT O-247AD SG50N06T 150oC; 300ms, 00A/ms 00A/ms; Discrete IGBTS SG50N06DT SG50N06T MDA300
2004 - SG50N06DT

Abstract: SG50N06T
Text: SG50N06T, SG50N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 , . Unit V 5.0 V 200 uA 1 mA ±100 nA 2.5 V SG50N06T, SG50N06DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Characteristic Values Test Conditions min


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PDF SG50N06T, SG50N06DT O-247AD SG50N06T 150oC; 300ms, 00A/ms 00A/ms; SG50N06DT SG50N06T
2004 - Discrete IGBTS

Abstract: SG23N06DT SG23N06T
Text: SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F Symbol 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , SG23N06T, SG23N06DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Characteristic Values


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PDF SG23N06T, SG23N06DT O-247AD SG23N06T 150oC; 100uH 300us, 00A/us 100oC Discrete IGBTS SG23N06DT SG23N06T
MJ 1505

Abstract: Discrete IGBTS SG200N06S PF-465 30uH
Text: SG200N06S Discrete IGBTs C E Dim. Dimensions SOT-227(ISOTOP) Millimeter Min. Max. Inches Min. Max. A B 0.161 0.161 0.169 0.169 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 11.68 8.92 12.22 , 200 TJ=25 C VCE(sat) max. 600 o IGES typ. Unit V SG200N06S Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min


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PDF SG200N06S OT-227 125oC MJ 1505 Discrete IGBTS SG200N06S PF-465 30uH
Discrete IGBTS

Abstract: SG20N12DT SG20N12T
Text: SG20N12T, SG20N12DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 Symbol 0.170 0.212 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , ) max. 1200 o IGES Unit nA 2.5 V SG20N12T, SG20N12DT Discrete IGBTs (TJ


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PDF SG20N12T, SG20N12DT O-247AD SG20N12T 150oC; 100uH; 00A/us 100oC 00A/us; Discrete IGBTS SG20N12DT SG20N12T
Discrete IGBTS

Abstract: SG35N12DT SG35N12T Tvj-150
Text: SG35N12T, SG35N12DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 , ±100 o uA 5 TJ=25 C V 250 o nA 3.3 V SG35N12T, SG35N12DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min


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PDF SG35N12T, SG35N12DT O-247AD SG35N12T 150oC; 40A/us 100oC 00A/us; Discrete IGBTS SG35N12DT SG35N12T Tvj-150
2004 - Discrete IGBTS

Abstract: SG25S12DT SG25S12T
Text: SG25S12T, SG25S12DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 Symbol 0.170 0.212 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values


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PDF SG25S12T, SG25S12DT O-247AD SG25S12T 150oC; 40A/us 100oC 00A/us; Discrete IGBTS SG25S12DT SG25S12T
300UH

Abstract: Discrete IGBTS SG12N06DP SG12N06P
Text: SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG12N06P SG12N06DP Symbol Test Conditions o Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 , =15V . SG12N06P, SG12N06DP Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test


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PDF SG12N06P, SG12N06DP O-220AB SG12N06P 150oC; 300uH 00A/us 100oC 300UH Discrete IGBTS SG12N06DP SG12N06P
Discrete IGBTS

Abstract: SG12N06DT SG12N06T 250NS120
Text: SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 Symbol 0.170 0.212 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , o IGES typ. Unit V SG12N06T, SG12N06DT Discrete IGBTs (TJ=25oC, unless otherwise


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PDF SG12N06T, SG12N06DT O-247AD SG12N06T 150oC; 300uH 00A/us 100oC Discrete IGBTS SG12N06DT SG12N06T 250NS120
2004 - Discrete IGBTS

Abstract: SG50N06DS SG50N06S DSA0025285
Text: SG50N06S, SG50N06DS Discrete IGBTs C E Dim. Dimensions SOT-227(ISOTOP) Millimeter Min. Max. Inches Min. Max. A B 1.255 0.323 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 , =0V; Unit 1 uA mA ±100 nA 2.5 V SG50N06S, SG50N06DS Discrete IGBTs (TJ=25oC, unless


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PDF SG50N06S, SG50N06DS OT-227 300us, 150oC 00A/us; Discrete IGBTS SG50N06DS SG50N06S DSA0025285
2004 - Discrete IGBTS

Abstract: SG12N06DP SG12N06P MDA100
Text: SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG12N06P SG12N06DP Symbol Test Conditions o Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 , =15V SG12N06P, SG12N06DP Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions


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PDF SG12N06P, SG12N06DP O-220AB SG12N06P 150oC; 300uH 00A/us 100oC Discrete IGBTS SG12N06DP SG12N06P MDA100
Discrete IGBTS

Abstract: SG15N12DP SG15N12P
Text: SG15N12P, SG15N12DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG15N12P SG15N12DP Symbol Test Conditions o Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms V ±20 ±30 VGES VGEM Unit 1200 1200 TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; V 30 15 60 ICM=40 @ 0.8 , , SG15N12DP Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions


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PDF SG15N12P, SG15N12DP O-220AB SG15N12P 150oC; 125oC; 125oC 00A/us; Discrete IGBTS SG15N12DP SG15N12P
Discrete IGBTS

Abstract: NS3039 SG25S12DT SG25S12T
Text: SG25S12T, SG25S12DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 Symbol 0.170 0.212 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values


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PDF SG25S12T, SG25S12DT O-247AD SG25S12T 150oC; 40A/us 100oC 00A/us; Discrete IGBTS NS3039 SG25S12DT SG25S12T
Discrete IGBTS

Abstract: SG50N06DS SG50N06S ICM100
Text: SG50N06S, SG50N06DS Discrete IGBTs C E Dim. Dimensions SOT-227(ISOTOP) Millimeter Min. Max. Inches Min. Max. A B 1.255 0.323 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 , 200 VCE=0.8VCES; VGE=0V; Unit V SG50N06S, SG50N06DS Discrete IGBTs (TJ=25oC, unless


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PDF SG50N06S, SG50N06DS OT-227 300us, 150oC 00A/us; Discrete IGBTS SG50N06DS SG50N06S ICM100
2004 - Discrete IGBTS

Abstract: SG7N06DP SG7N06P
Text: SG7N06P, SG7N06DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG7N06DP SG7N06P Symbol Test Conditions o Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 , ; VGE=15V Unit V uA ±100 1.5 nA 1.8 V SG7N06P, SG7N06DP Discrete IGBTs (TJ


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PDF SG7N06P, SG7N06DP O-220AB SG7N06P 150oC; 300uH 00A/us 100oC Discrete IGBTS SG7N06DP SG7N06P
2004 - Discrete IGBTS

Abstract: SG12N06DT SG12N06T
Text: SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 Symbol 0.170 0.212 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , ±100 nA 2.1 V SG12N06T, SG12N06DT Discrete IGBTs (TJ=25oC, unless otherwise specified


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PDF SG12N06T, SG12N06DT O-247AD SG12N06T 150oC; 300uH 00A/us 100oC Discrete IGBTS SG12N06DT SG12N06T
2004 - Discrete IGBTS

Abstract: SG15N12DP SG15N12P
Text: SG15N12P, SG15N12DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG15N12P SG15N12DP Symbol Test Conditions o Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms V ±20 ±30 VGES VGEM Unit 1200 1200 TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; V 30 15 60 ICM=40 @ 0.8 , Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values


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PDF SG15N12P, SG15N12DP O-220AB SG15N12P 150oC; 125oC; 125oC 00A/us; Discrete IGBTS SG15N12DP SG15N12P
Discrete IGBTS

Abstract: SG50N06D2S SG50N06D3S
Text: SG50N06D2S, SG50N06D3S Discrete IGBTs Dimensions SOT-227(ISOTOP) Dim. Millimeter Min. Max. Inches Min. Max. A B 0.161 0.587 0.169 0.595 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 25.15 1.98 25.42 2.13 0.990 0.078 1.001 , . V SG50N06D2S, SG50N06D3S Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol


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PDF SG50N06D2S, SG50N06D3S OT-227 100uH 300us, 150oC 00A/us; Discrete IGBTS SG50N06D2S SG50N06D3S
300uH

Abstract: Discrete IGBTS SG7N06DP SG7N06P
Text: SG7N06P, SG7N06DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG7N06DP SG7N06P Symbol Test Conditions o Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 , ; VGE=15V Unit V uA ±100 1.5 . nA 1.8 V SG7N06P, SG7N06DP Discrete IGBTs


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PDF SG7N06P, SG7N06DP O-220AB SG7N06P 150oC; 300uH 00A/us 100oC 300uH Discrete IGBTS SG7N06DP SG7N06P
2004 - ICM100

Abstract: SG50N06D2S SG50N06D3S
Text: SG50N06D2S, SG50N06D3S Discrete IGBTs Dimensions SOT-227(ISOTOP) Dim. Millimeter Min. Max. Inches Min. Max. A B 0.161 0.587 0.169 0.595 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 25.15 1.98 25.42 2.13 0.990 0.078 1.001 , SG50N06D2S, SG50N06D3S Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Characteristic


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PDF SG50N06D2S, SG50N06D3S OT-227 100uH 300us, 150oC 00A/us; ICM100 SG50N06D2S SG50N06D3S
2004 - Discrete IGBTS

Abstract: SG200N06S
Text: SG200N06S Discrete IGBTs C E Dim. Dimensions SOT-227(ISOTOP) Millimeter Min. Max. Inches Min. Max. A B 0.161 0.161 0.169 0.169 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 , typ. Unit V 6 V 200 2 uA mA ±400 nA 2.5 V SG200N06S Discrete IGBTs


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PDF SG200N06S OT-227 125oC Discrete IGBTS SG200N06S
2004 - Discrete IGBTS

Abstract: SG35N12DT SG35N12T DSA0025285
Text: SG35N12T, SG35N12DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 , ±100 o uA 5 TJ=25 C V 250 o nA 3.3 V SG35N12T, SG35N12DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min


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PDF SG35N12T, SG35N12DT O-247AD SG35N12T 150oC; 40A/us 100oC 00A/us; Discrete IGBTS SG35N12DT SG35N12T DSA0025285
2004 - Discrete IGBTS

Abstract: 100uH SMD SG20N12DT SG20N12T
Text: SG20N12T, SG20N12DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 Symbol 0.170 0.212 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , ) max. 1200 o IGES Unit nA 2.5 V SG20N12T, SG20N12DT Discrete IGBTs (TJ


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PDF SG20N12T, SG20N12DT O-247AD SG20N12T 150oC; 100uH; 00A/us 100oC 00A/us; Discrete IGBTS 100uH SMD SG20N12DT SG20N12T
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