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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

Diode SMD ED 7ca Datasheets Context Search

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Diode SMD ED 7ca

Abstract: alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C
Text: . August 1993 Ed : 2A_V6 ■7cà ®2i:1237 OObQOMB 3S1 ■283 STTA806M THERMAL AND POWER DATA Symbol , /=7 SGS-THOMSON ILiOT®«! STTA806M _ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT , "FREEWHEEL MODE" OPERATIONS: Freewheel or Booster Diode . ■ULTRA-FAST AND SOFT RECOVERY. ■VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. . HIGH FREQUENCY OPERATIONS. . HIGH , isolated SMD with copper tab DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast


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PDF STTA806M Diode SMD ED 7ca alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C
IC 4094

Abstract: EN4094 TRANSISTOR ARRAY transistor 3007A Monolithic Transistor Pair NPN Monolithic Transistor Pair 3007A-DIP18 LB1741
Text: SANYO SEMICONDUCTOR CORP L3E ]> Ordering number: EN4094 I 7cà ®c17D7b 0012Möb 04ß ■TSAJ , Parameter Symbol Condition« Hating Un» min typ max Clamp diode withstand voltage Vr - - 50 V Clamp diode forwaid current If - - 400 mA Electrical Characteristics T, = 25 'C Parameter Symbol , Clamp diode leakage current Ir Vr = 50 V - - 50 HA Ctamp diode (onward voltage Vf If = 350 mA - - 2.0 V , 657 ■TSA J LB1741 OFF-state input current Opan 1 (OFF) Clamp diode forward voltage IT Open


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PDF EN4094 c17D7b 0012MÃ LB1741 18-pin IC 4094 TRANSISTOR ARRAY transistor 3007A Monolithic Transistor Pair NPN Monolithic Transistor Pair 3007A-DIP18 LB1741
tvn 610

Abstract: SSF45N20A
Text: 7cà ¯b4142 □□4G1Ô6 12D SSF45N20A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test , Avalanche Energy Q> 10 mJ dv/dt Peak Diode Recovery dv/dt Q 5.0 V/ns Total Power Dissipation (TC , Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition , Current Q> - - 180 vSD Diode Foiward Voltage @ - - 1.5 V Tj=25°C ,IS=26.4A,VGS=0V t. Reverse Recovery , . Source-Drain Diode Forward Voltage at ' 0.10 H o II J ° or to • o a ■A It U a V »10V 1. .


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PDF SSF45N20A 003b333 003b33M D03b335 tvn 610 SSF45N20A
2006 - Not Available

Abstract: No abstract text available
Text: SKiiP 132GDL120-4DU power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions IGBT : : #' :? B 8 $ B3 E &< ' 7CA &7' : A # 0 & ' 5 < = 7 8 ", &! ' 9 7 8 " , #, &##"A,' #+ # $ + &$ ",' 000 F #, % &#",' Units : : : E 9 : Inverse diode SKiiP 2 7 , ' Inverse diode Mechanical data 3 3 1 1 < A - A - ) " 1( Thermal


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PDF 132GDL120-4DU
2006 - Not Available

Abstract: No abstract text available
Text: SKiiP 132GDL120-4DU INTEGRATED DRIVER, SENSORS Absolute Maximum Ratings Symbol Conditions IGBT : : #' :? B 8 $ B3 E &< ' 7CA &7' : A # 0 & ' 5 < = 7 8 ", &! ' 9 7 8 ", &! ' 9 7C 8 #, 9A 8 # D 0 < A 7C 8 #, 9A # % 7 8 ", 9 1 / Values #" > @" #, &##"A,' #, &##"A,' #+ # $ + &$ ",' 000 F #, &#",' Units : : : E 9 : Inverse diode SKiiP 2 7-pack - , ' Inverse diode Mechanical data 3 3 1 1 < A - A - ) " 1( Thermal


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PDF 132GDL120-4DU 132GDL120-4DU
2006 - 4447 diode

Abstract: No abstract text available
Text: SKiiP 132GDL120-4DU power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions IGBT : : #' :? B 8 $ B3 E &< ' 7CA &7' : A # 0 & ' 5 < = 7 8 ", &! ' 9 7 8 " , #, &##"A,' #+ # $ + &$ ",' 000 F #, &#",' % Units : : : E 9 : Inverse diode SKiiP 2 7 , ' Inverse diode Mechanical data 3 3 1 1 < A - A - ) " 1( Thermal


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PDF 132GDL120-4DU 4447 diode
Not Available

Abstract: No abstract text available
Text: SKiiP 132GDL120-4DU Absolute Maximum Ratings Symbol Conditions IGBT : : #' :? B 8 $ B3 E &< ' 7CA &7' : A # 0 & ' 5 < = 7 8 ", &! ' 9 7 8 ", &! ' 9 7C 8 #, 9A 8 # D 0 < A 7C 8 #, 9A # % 7 8 ", 9 1 / Values #" > @" #, &##"A,' #, &##"A,' #+ # $ + &$ ",' 000 F #, &#",' Units : : : E 9 : Inverse diode SKiiP 2 7-pack - integrated intelligent Power , ' Inverse diode Mechanical data 3 3 1 1 < A - A - ) " 1( Thermal


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PDF 132GDL120-4DU
2006 - Not Available

Abstract: No abstract text available
Text: SKiiP 132GDL120-4DU INTEGRATED DRIVER, SENSORS Absolute Maximum Ratings Symbol Conditions IGBT : : #' :? B 8 $ B3 E &< ' 7CA &7' : A # 0 & ' 5 < = 7 8 ", &! ' 9 7 8 ", &! ' 9 7C 8 #, 9A 8 # D 0 < A 7C 8 #, 9A # % 7 8 ", 9 1 / Values #" > @" #, &##"A,' #, &##"A,' #+ # $ + &$ ",' 000 F #, &#",' Units : : : E 9 : Inverse diode SKiiP 2 7-pack - , ' Inverse diode Mechanical data 3 3 1 1 < A - A - ) " 1( Thermal


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PDF 132GDL120-4DU 132GDL120-4DU
STH4N80

Abstract: STH4N80FI 38ak
Text: ) 150 200 ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit Isd Source-drain , 7cà ®Si:}S37 OOMSÛb? ÔT2 ■S6TH Turn-off Drain-source Voltage Slope dv/dt (V/ns) 0 50 100 150 , 0 200 400 600 800 VDS (V) Source-drain Diode Forward Characteristics I SO (A) 10 , Resistive Load And Diode Reverse Recovery Time v(br)ds s v0 — I ' dm / lD-' I voo h \ / I \ Vdd


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PDF STH4N80 STH4N80FI STH4N80 STH4N80FI 7T2T237 STH4N80/FI SC0S970 38ak
diode smd ED 17

Abstract: smd diode ED diode smd ed 02 ersa rds 80 ST SMD SCR diode smd ed 25 smd diode ED 47
Text: Diode ± 10% Accuracy Current Sink I nt egrat ed OVP PWM Dim m ing: 1k t o 30kHz, 10 t o 100% Dut y , Fe a t u r e s The AAT2610 is a highly int egrat ed power m anagem ent solut ion specifically suit ed for Digit al St ill Cam era ( DSC) syst em s, feat uring seven DC- DC swit ching regulat ors , m ed Buck or Boost Delay • I nt egrat ed Soft- St art • Over-Volt age and Over-Tem perat ure , - ion bat t eries, 2- cell alkaline bat t eries, and USB and regulat ed AC- DC wall adapt ers. All


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PDF AAT2610 AAT2610 diode smd ED 17 smd diode ED diode smd ed 02 ersa rds 80 ST SMD SCR diode smd ed 25 smd diode ED 47
IC LA7837

Abstract: LA7837 la7837 pin out LA7837* pin voltages LA7838 la7837 vertical LA7837 functions LA 7838 colour tv circuit diagram la 7837
Text: of the pin 6 sawtooth wave bends, as shown in Fig.4, due to the diode response of the clamp waveform , discharge circuit and clamp circuit are formed by the external Zener diode and transistor TR2. Fig , : VCLAMP=5/12-VCC . ® For 12V, VCLAMP=5[V] Therefore, the Zener diode used in , Zener diode must be rated more than 4V (e.g. 4.5V). No.3313 711707b 001M373 3^3 Q> This Material , .7 No.3313 7cà ¬cì707b 00m374 EET This Material Copyrighted By Its Respective Manufacturer LA7837


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PDF LA7837, LA7837 IC LA7837 la7837 pin out LA7837* pin voltages LA7838 la7837 vertical LA7837 functions LA 7838 colour tv circuit diagram la 7837
2012 - UV-LED

Abstract: No abstract text available
Text: UVLED-385-400- SMD TECHNICAL DATA High Power UVLED, SMD Features • • • • Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power , only and subjected to change without prior notice. 16.02.2012 UVLED-385-400- SMD 1 of 7 , lead-free (Pd free) 16.02.2012 UVLED-385-400- SMD 2 of 7 Typical Performance Curves Forward , Ambient Temp. vs. Allowable Forward Current 16.02.2012 UVLED-385-400- SMD 3 of 7 Forward


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PDF UVLED-385-400-SMD UV-LED
2012 - Not Available

Abstract: No abstract text available
Text: UVLED-365-330- SMD TECHNICAL DATA High Power UVLED, SMD Features • • • • Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power , only and subjected to change without prior notice. 16.02.2012 UVLED-365-330- SMD 1 of 7 , lead-free (Pd free) 16.02.2012 UVLED-365-330- SMD 2 of 7 Typical Performance Curves Forward , Ambient Temp. vs. Allowable Forward Current 16.02.2012 UVLED-365-330- SMD 3 of 7 Forward


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PDF UVLED-365-330-SMD
2009 - Diode SMD ED 98

Abstract: diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED 1/Diode SMD ED 98
Text: diode I F=f(V SD) parameter: T j 102 ed nd me ns om sig ec de tr w e no rn fo 120 V 101 150 , diode switching characteristics ed nd me ns om sig ec de tr w e no rn fo Rev. 2.0 page 8 2009-09-09 , compliant) CoolMOS CPA is specially designed for: · DC/DC converters for Automotive Applications ed , otherwise specified Parameter Continuous diode forward current Diode pulse current1) Reverse diode dv /dt 3) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 6.6 34 15 V/ns Unit A ed nd me ns om sig ec de


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PDF IPB60R299CPA 6R299A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 Diode SMD ED 98 diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED 1/Diode SMD ED 98
2009 - Diode SMD ED 98

Abstract: SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME Energy Me diode smd ed 02 smd transistor ed
Text: 2009-03-25 IPB60R099CPA Definition of diode switching characteristics ed nd me ns om sig ec de , IPB60R099CPA CoolMOS® Power Transistor Product Summary V DS 600 0.105 Q g,typ ed , IPB60R099CPA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current IS Diode pulse current1) I S,pulse Reverse diode dv /dt 3) Value Symbol Conditions dv /dt 18 T C=25 °C A 93 15 ed nd me ns om sig ec de tr ew no rn fo


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PDF IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 Diode SMD ED 98 SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME Energy Me diode smd ed 02 smd transistor ed
2009 - DIODE ED 99

Abstract: diode smd ED 35 transistor smd marking ND mosfet 6R199 IPB60R199CPA smd transistor ds 65 me smd transistor SMD TRANSISTOR MARKING ME diode smd ed 06 smd diode EC
Text: Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 25 °C, 98% ed nd me ns om sig , 7 2009-09-01 IPB60R199CPA Definition of diode switching characteristics ed nd me ns om , compliant) CoolMOS CPA is specially designed for: · DC/DC converters for Automotive Applications ed , otherwise specified Parameter Continuous diode forward current Diode pulse current1) Reverse diode dv /dt 3) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 51 15 V/ns Unit A ed nd me ns om sig ec de


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PDF IPB60R199CPA 6R199A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 DIODE ED 99 diode smd ED 35 transistor smd marking ND mosfet 6R199 IPB60R199CPA smd transistor ds 65 me smd transistor SMD TRANSISTOR MARKING ME diode smd ed 06 smd diode EC
74AC257

Abstract: 74AC257M
Text: Voltage -0.5 to Vcc + 0.5 V ilk DC Input Diode Current ±20 mA 'ok DC Output Diode Current ±20 mA , : OUTPUT ENABLE AND DISABLE TIME (f=1 MHz; 50% duty cycle) 3ns 3ns 7cà ®2tiS37 D077R3Q 170 EjJ


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PDF 74AC257 AC257 2tiS37 D077R3Q P013H 7C1EC1B37 Q077R31 74AC257 74AC257M
3528 LED warm white

Abstract: white 3528 LED smd 3528 SMD led 3528 smd 3528 led Smd 3528 heat generation LED white SMD 3528 led SMD 3528 NS3528WHEA-B1BP 000 smd diode ED
Text: 3528 Flash White Color SMD Type LED 3528 Size Flash White Color SMD Type LED Part Number , : 82-31-704-2607 -1- 3528 Flash White Color SMD Type LED 1. General Description The document describes the specification of 3528 size, flash white color SMD type LED. Chip LEDs, or SMD type LEDs, are , required. 1-1. Features Size : 3.5 x 2.8 x 1.8 mm (L×W×H) ­ SMD (Surface-Mount Device) type , . Cathode 3528 Flash White Color SMD Type LED 2. Specification 2-1. Absolute Maximum Rating (Ta


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PDF S3528WH-EA NS-120 3528 LED warm white white 3528 LED smd 3528 SMD led 3528 smd 3528 led Smd 3528 heat generation LED white SMD 3528 led SMD 3528 NS3528WHEA-B1BP 000 smd diode ED
diode smd ed 49

Abstract: smd diode code ED JJ SMD diode a8 smd diode ED DIODE SMD A8 smd code marking A8 diode A8 JJ SMD diode smd diode code I5 diode smd marking ed st smd diode marking code
Text: Information SMD -220 Tape & Reel TRR 1 -60 (-Q63) r\ IOR Appendix C PART NUMBER Appendix D FE ED DIRECTION TRL , design, low on-resistance and cost-effectiveness. The SMD -220 is a surface mount power package capable of , on-resistance in any existing surface mount package. The SMD -220 is suitable for high current applications , Repetitive Avalanche Energy © 5.0 mJ dv/dt Peak Diode Recovery dv/dt ® 4.8 V/ns Tj, Tstg Junction and , (Body Diode ) — — 4.4 A MOSFET symbol _s showingthe / I , integral reverse a\ ¡lL p-n junction diode


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PDF IRF624S SMD-220 D-63S0 G214b7 i09Zj diode smd ed 49 smd diode code ED JJ SMD diode a8 smd diode ED DIODE SMD A8 smd code marking A8 diode A8 JJ SMD diode smd diode code I5 diode smd marking ed st smd diode marking code
ENN5340A

Abstract: CC10Q 40110 LB1950V
Text: pins must be connected to the VREF pin if the FG and PG amplifiers are not used. No. 5340-8/10 7cà , detects the sum of the coil output voltage lower side envelope and the diode threshold voltage. 2. The , VOUT WOUT Output voltage lower side envelope + ( diode threshold voltage) FILTER No. 5340-9/10


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PDF ENN5340A LB1950V ENN5340A CC10Q 40110 LB1950V
2014 - UVLED375-SMD

Abstract: No abstract text available
Text: UVLED375-SMD TECHNICAL DATA 375 nm SMD UVLED Features • • • • Zener diode is , 9 Moisture Resistance Cycle JEITA ED -4701 330 301 JEITA ED -4701 330 303 JEITA ED -4701 330 307 JEITA ED -4701 100 105 JEITA ED -4701 200 203 10 High Temperature Storage 11 12 , 1 Time >95% 20 cycles 100 cycles 10 cycles JEITA ED -4701 200 201 Ta=100°C 1000 Hr 50 50/50 Low Temperature Storage JEITA ED -4701 200 202 Ta=-40°C 1000 Hr 50 50


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PDF UVLED375-SMD UVLED375-SMD
2010 - UVLED365_SMD

Abstract: No abstract text available
Text: UVLED365-SMD TECHNICAL DATA 365 nm SMD UVLED Features • • • • Zener diode is , Resistance Cycle JEITA ED -4701 330 301 JEITA ED -4701 330 303 JEITA ED -4701 330 307 JEITA ED -4701 100 105 JEITA ED -4701 200 203 10 High Temperature Storage 11 12 -40°C ~ 25°C ~ 100 , cycles 100 cycles 10 cycles JEITA ED -4701 200 201 Ta=100°C 1000 Hr 50 50/50 Low Temperature Storage JEITA ED -4701 200 202 Ta=-40°C 1000 Hr 50 50/50 Vibration JEITA ED


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PDF UVLED365-SMD uvled365 UVLED365_SMD
2014 - UVLED375E-SMD

Abstract: No abstract text available
Text: UVLED375E-SMD TECHNICAL DATA 375 nm SMD UVLED Features • • • • Zener diode is , Resistance Cycle JEITA ED -4701 330 301 JEITA ED -4701 330 303 JEITA ED -4701 330 307 JEITA ED -4701 100 105 JEITA ED -4701 200 203 10 High Temperature Storage 11 12 -40°C ~ 25 , % 20 cycles 100 cycles 10 cycles JEITA ED -4701 200 201 Ta=100°C 1000 Hr 50 50/50 Low Temperature Storage JEITA ED -4701 200 202 Ta=-40°C 1000 Hr 50 50/50 Vibration


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PDF UVLED375E-SMD UVLED375E-SMD
2005 - diode smd ED 68

Abstract: LNK302 LNK304 Application Note PI-3755-121003 LNK304 PI-3752-121003 PI-3757-112103 LNK304PG PI-3492-111903 isolation Application Note LNK304
Text: manufacturable in SMD EcoSmart ­ Extremely Energy Efficient · Consumes typically only 50/80 mW in self-powered , discontinuous conduction mode. 3. Continuous conduction mode. 4. Packages: P: DIP-8B, G: SMD -8B. For lead-free , reference for the BYPASS and FEEDBACK pins. P Package (DIP-8B) G Package ( SMD -8B) S 1 8 2 7 , of a The power processing stage is formed by the LinkSwitch-TN, freewheeling diode D1, output , the mostly discontinuous-mode (MDCM). Diode D1 is an ultra-fast diode with a reverse recovery time


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PDF LNK302/304-306 LNK302 diode smd ED 68 LNK304 Application Note PI-3755-121003 LNK304 PI-3752-121003 PI-3757-112103 LNK304PG PI-3492-111903 isolation Application Note LNK304
L6221

Abstract: L6221A L6221N SLO 365 R s9966
Text: Input to Driver 2 OUT 1 Output of Driver 1 OUT 2 Output of Driver 2 CLAMP A Diode Gamp to Driver 1 , of Driver 4 CLAMP B Diode Clamp to Driver 3 and Driver 4 ENABLE Enable Input to All Drivers Vs , Input High Current Vin = VinH, Ven = VenH ± 10 h A Ir Clamp Diode Leakage Current Vr = 50 V, Ven = VenH Vin = VinL 100 iiA Vf Clamp Diode Forward Voltage If = 1A If = 1.8A 1.6 2.0 V V td (on) Turn , Figure 6 : Clamp Diode Leakage Current. VS«+5V V| fi b0.8 V O" Ven=5V O 1 V-«+50V o 1H7) &U) 7Â


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PDF L6221 L6221A L6221N SLO 365 R s9966
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