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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

Diode PT 520 Datasheets Context Search

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2001 - mj 1504 transistor equivalent

Abstract: ARF450 FREDFETs APT1208 APT100S20B APT60M75JVR transistors mj 1504 APT60GF120JRD APT4014BVR APT1201R2BLL
Text: offered: - MOSFETs for applications not utilizing the intrinsic body drain diode - FREDFETs - for applications utilizing the intrinsic body drain diode . These MOSFETs have the body drain diode optimized for , CIRCUIT REQUIREMENT SOLUTION Ruggedness High Avalanche Energy Capability - EAS High Diode , Qgs/Qgd Ratio Fast Intrinsic Body-Drain diode - trr Reduced Power Dissipation Ease of Drive , Qgd Watts typ, nC typ, nC 465 520 735 695 465 520 735 695 465 520 735 695 380 465 520


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1999 - APT6015LVR

Abstract: 5020bn arf450 APT6011LVFR FREDFETs apt8015jvr 5017bvr APT2*61D120J APT100GF60LR APT5014LVR
Text: 2Q00 520 625 450 520 625 520 625 5000 5830 3650 5200 6200 6400 7600 190 220 145 , 1Q00 NOW 1Q00 2Q00 2Q00 T-MAXTM 21 25 37 47 58 100 100 520 625 450 520 625 520 , 34 44 53 77 450 700 450 520 700 5000 11250 5200 6200 11350 190 430 200 240 , 58 100 100 520 450 520 625 520 625 5000 4100 5600 6700 6400 7600 145 120 155 , 58 100 100 520 450 520 625 520 625 5000 4100 5600 6700 6400 7600 145 120 155


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PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn arf450 APT6011LVFR FREDFETs apt8015jvr 5017bvr APT2*61D120J APT100GF60LR APT5014LVR
2000 - 5017BVR

Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC APT5020BLC apt2x101D60 APT30M85BVR apt10050
Text: 0.500 0.400 0.140 0.100 0.080 0.022 21 25 37 47 58 100 520 625 450 520 625 520 , 0.022 21 25 37 47 58 100 520 625 450 520 625 520 5000 5830 3650 5200 6200 6400 0.500 0.250 0.100 0.080 0.050 25 34 44 53 77 450 700 450 520 700 5000 11250 5200 , Package Style S S S 1000 0.60 18.0 520 300 APL1001J 500 0.12 43.0 520 300 ISOTOP® 7 22 APL501J G OT D S *ISOTOP®[J] 6 *Not to Scale


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PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC APT5020BLC apt2x101D60 APT30M85BVR apt10050
1998 - APT10026JN

Abstract: apt1004rbn APT4020BN APT5014LVR APT5010LVFR FREDFETs APT10050JN APT8030jn APT5010JVR APT50M50JVFR
Text: ruggedness. At full rated current, the VCE(SAT) may be higher than PT technologies, but under normal , technology has fewer and more easily controlled processing steps than with PT technologies. The end user can expect less lot-to-lot variation of electrical parameters than is possible with PT devices. Low , leakage current in alternative technologies. NPT Technology vs PT Technology Faster Switching . , of an NPT IGBT is not as temperature dependent as PT devices. These parameters remain relatively


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PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT4020BN APT5014LVR APT5010LVFR FREDFETs APT10050JN APT8030jn APT5010JVR APT50M50JVFR
2004 - picometrix receiver

Abstract: Picometrix picometrix pt-12B PT-12B Diode PT 520 PT12B
Text: PT -12B Product Bulletin (Preliminary) · April 2004 · PIN/TIA receiver · High data rate, up , · High sensitivity, -15 dBm @ 850 nm · SMA or GPO output connector The PT -12B is a single-output , electrical) Low frequency cutoff1 9.0 DC diode , usable from 750 nm to 1650 nm, Minimum Typical , 8-pin butterfly with SMA or GPO 0 -40 10-10 BER, PRBS 223-1 True DC Output Option The PT , accurate extinction ratio measurements. PT -12B Product Specifications .100 TYP. .015±.003 TYP


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PDF PT-12B PT-12B PB-PT-12B-0404-A picometrix receiver Picometrix picometrix pt-12B Diode PT 520 PT12B
1N1742A

Abstract: 1N1742 MIL-S-19500 1N742A 1N742 MIL marking diode military part marking symbols origin semiconductor diode
Text: VALIDATIONl 17 AUGUST 1987 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE , SILICON TYPE 1N742A MIL-S , MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE , SILICON TYPE 1N1742A This amendment forms a part of , , voltage-reference, organic-polymer-encapsulated diode , and is in accordance with MIL- S-19500 and as specified , . | MIL-S-19500/298(USAF) 21 October 1964_ MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE , SILICON TYPE , %, silicon, voltage-reference diode , and is in accordance with MIL-S-19500 and as specified herein. This


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PDF 1N742A MIL-S-19500/298 00Q3fl4fl S-19500/298 MIL-S-19500. MIL-S-19500 1N1742A 1N1742 1N742A 1N742 MIL marking diode military part marking symbols origin semiconductor diode
Not Available

Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR KS74AHCT I N C 02 7^414E OODblbS 5181519 520 /521/522 7 , 8-blt words • '518, ’ 520 and 522 have 20k(l pull-up Resistors on Q Inputs These identity , outputs, while the ' 520 , 521, and '522 provide lD =Q outputs. The '518; '519, and '522 have open-draln. outputs. The '518, ' 520 , and '522 feature 20-kQ inputs for analog or switch data. TYPE INPUT , No P = Q Open-Drain ' 520 Yes P = Q Totem-Pole '521 No P =Q Totem-Pole '522


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PDF KS74AHCT 20-kQ 7Tb414S 14-Pin
IC-3328

Abstract: *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array
Text: = 25 °C> Channel Temperature Storage Temperature * PW = 1 0 ms. Duty Cycle = 1 % PT2 Pt i V d ss V , Circuit 2 NEC TYPICAL CHARACTERISTICS (Ta = 25 °C) ¿¿PAI 520 TOTAL POWER DISSIPATION vs , Pt 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ts - Am , Drain Current - A 3 NEC CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE ¿¿PAI 520 SOURCE TO DRAIN DIODE FORWARD VOLTAGE I sd - Diode Forward Current 0 V sd 1.0 - Source to Drain Voltage -


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PDF uPA1520 10-Pin JiPA1520H IC-3328 *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array
2013 - Not Available

Abstract: No abstract text available
Text: -14828 Revision. 1 Product Standards Zener Diode DZ2S56000L Technical Data ( reference ) IF - VF PT - , Doc No. TT4-EA-14828 Revision. 1 Product Standards Zener Diode DZ2S56000L DZ2S56000L , Note) PT ESD Tj Tstg Rating Unit 150 ±8 150 -55 to +150 mW kV °C °C , VR = 43 V VR = 0 V, f = 1 MHz IZ = 2 mA Min Typ Max Unit 52.0 56.0 60.0 0.05 , current IF (A) Total power dissipation PT (mW) 200 100 50 0 0 20 40 60 Ta = 25


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PDF TT4-EA-14828 DZ2S56000L UL-94
schematic diagram 800 watt power amplifier

Abstract: ZX7R
Text: CORPORATION · TELEPHONE ( 520 ) 6 90 -8 60 0 · FAX ( 520 ) 888 -3 32 9 · ORDERS ( 520 ) 6 90-8601 · EM AIL pT O d , RPO RATIO N · TELEPHONE ( 520 ) 690 -8 60 0 · FAX ( 520 ) 888 -3 32 9 · ORDERS ( 520 ) 690 -8 60 1 · EMAIL p , specific operating considerations. G ND GND Input protection, 10V zener diode . A P E X M


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PDF 546-APEX schematic diagram 800 watt power amplifier ZX7R
2003 - Not Available

Abstract: No abstract text available
Text: APTGU60A120T Phase leg PT IGBT Power Module Application · · · · Welding converters Switched Mode , °C Features · Power MOS 7® Punch Through ( PT ) IGBT - Low conduction loss - Ultra fast tail current shutoff - , Low diode VF Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead , (125°C) VGE = 15V VBus = 800V IC = 60A RG = 2.5 Typ 6440 520 100 310 40 140 16 26 94 53 2000 3480 1814 16 26 147 100 2000 5684 4650 Max Unit pF nC ns µJ ns µJ Reverse diode


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PDF APTGU60A120T 50kHz
2003 - Not Available

Abstract: No abstract text available
Text: APTGU60DH120T Asymmetrical - Bridge PT IGBT Power Module Application Welding converters Switched Mode Power Supplies · Switched Reluctance Motor Drives Features · Power MOS 7® Punch Through ( PT ) IGBT , capability in the 50kHz range - Soft recovery parallel diodes - Low diode VF Kelvin emitter for easy drive , Switching (125°C) VGE = 15V VBus = 800V IC = 60A RG = 2.5 Typ 6440 520 100 310 40 140 16 26 94 53 2000 3480 1814 16 26 147 100 2000 5684 4650 Max Unit pF nC ns µJ ns µJ Reverse diode


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PDF APTGU60DH120T 50kHz
2003 - R25B

Abstract: No abstract text available
Text: APTGU60H120T Full - Bridge PT IGBT Power Module Application · · · · Welding converters Switched , °C Features · Power MOS 7® Punch Through ( PT ) IGBT - Low conduction loss - Ultra fast tail current shutoff - , Low diode VF Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead , Switching (125°C) VGE = 15V VBus = 800V IC = 60A RG = 2.5 Typ 6440 520 100 310 40 140 16 26 94 53 2000 3480 1814 16 26 147 100 2000 5684 4650 Max Unit pF nC ns µJ ns µJ Reverse diode


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PDF APTGU60H120T 50kHz R25B
2003 - Not Available

Abstract: No abstract text available
Text: APTGU60DU120T Dual common source PT IGBT Power Module Application · · · AC Switches Switched Mode , MOS 7® Punch Through ( PT ) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 50kHz range - Soft recovery parallel diodes - Low diode VF , = 15V VBus = 800V IC = 60A RG = 2.5 Typ 6440 520 100 310 40 140 16 26 94 53 2000 3480 1814 16 26 147 100 2000 5684 4650 Max Unit pF nC ns µJ ns µJ Reverse diode ratings and


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PDF APTGU60DU120T 50kHz
2003 - Not Available

Abstract: No abstract text available
Text: APTGU60SK120T Buck chopper PT IGBT Power Module Application · · AC and DC motor control Switched Mode Power Supplies VCES = 1200V IC = 60A @ Tc = 80°C Features · Power MOS 7® Punch Through ( PT , capability in the 50kHz range - Soft recovery parallel diodes - Low diode VF Kelvin emitter for easy drive , 60A RG = 2.5 Typ 6440 520 100 310 40 140 16 26 94 53 2000 3480 1814 16 26 147 100 2000 5684 4650 Max Unit pF nC ns µJ ns µJ Reverse diode ratings and characteristics Symbol


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PDF APTGU60SK120T 50kHz
2003 - Not Available

Abstract: No abstract text available
Text: APTGU60DA120T Boost chopper PT IGBT Power Module Application · · · AC and DC motor control , Power MOS 7® Punch Through ( PT ) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 50kHz range - Soft recovery parallel diodes - Low diode VF , 60A RG = 2.5 Typ 6440 520 100 310 40 140 16 26 94 53 2000 3480 1814 16 26 147 100 2000 5684 4650 Max Unit pF nC ns µJ ns µJ Reverse diode ratings and characteristics Symbol


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PDF APTGU60DA120T 50kHz
1999 - 2SK3432

Abstract: 2SK3432-S 2SK3432-Z MP-25 MP-25Z
Text: , ID = 42 A) · Low Ciss: Ciss = 8900 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM , ) ±20 V ID(DC) ±83 A ID(pulse) ±332 A PT 100 W Drain Current (DC , °C) PT 1.5 W Channel Temperature Tch 150 (TO-262) °C Tstg ­55 to +150 °C , ns RG = 10 2500 ns td(off) 390 ns tf 520 ns 140 nC Rise Time , nC Gate to Drain Charge QGD 43 nC Body Diode Forward Voltage ID = 83 A , VDD = 32 V


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PDF 2SK3432 2SK3432 O-220AB 2SK3432-S O-262 2SK3432-Z O-220SMD O-220AB) 2SK3432-S 2SK3432-Z MP-25 MP-25Z
2000 - 2SK3402

Abstract: 2SK3402-Z fet to251
Text: . · Built-in Gate Protection Diode · TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS , °C) PT 40 W Total Power Dissipation (TA = 25°C) PT 1.0 W Channel Temperature Tch , Capacitance Ciss VDS = 10 V 3200 pF Output Capacitance Coss VGS = 0 V 520 pF , Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE , Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and


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PDF 2SK3402 2SK3402 O-251 2SK3402-Z O-252 O-251/TO-252 O-251) 2SK3402-Z fet to251
2000 - 2SK3435

Abstract: 2SK3435-S 2SK3435-Z MP-25 MP-25Z m7 diode sd
Text: ) 5 · Low Ciss: Ciss = 3200 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA , Drain Current (DC) ID(DC) ±80 A ID(pulse) ±320 A PT 84 W Drain Current (pulse) Note1 5 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) PT , 1 MHz Output Capacitance 5 Gate to Source Cut-off Voltage 5 5 S pF Coss 520 , nC Body Diode Forward Voltage ID = 80 A , VDD = 48 V, VGS = 10 V VF(S-D) IF = 80 A, VGS =


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PDF 2SK3435 2SK3435 O-220AB 2SK3435-S O-262 2SK3435-Z O-220SMD O-220AB) 2SK3435-S 2SK3435-Z MP-25 MP-25Z m7 diode sd
1999 - NP86N04DHE

Abstract: NP86N04EHE MP-25 NP86N04CHE
Text: . (VGS = 10 V, ID = 43 A) · Low Ciss : Ciss = 6200 pF TYP. · Built-in gate protection diode ABSOLUTE , (Pulse) Note2 Total Power Dissipation (TA = 25°C) PT 1.8 W Total Power Dissipation (Tch = 25°C) PT 170 W Single Avalanche Current IAS T.B.D. A EAS T.B.D. mJ , ns RG = 10 2100 5250 ns td(off) 260 520 ns tf 340 850 ns 100 , 1.0 V IF = 86A, VGS = 0 V, di/dt = 100A/µs 52 ns 90 nC Body Diode Forward Voltage


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PDF NP86N04CHE, NP86N04DHE, NP86N04EHE O-220AB O-262 NP86N04DHE NP86N04CHE O-263 NP86N04DHE NP86N04EHE MP-25 NP86N04CHE
2013 - triac mw 131 600d

Abstract: 65n06
Text: 520 1.5 100 150 0.85 NST26 PT 16 1600 27 520 1.5 100 150 0.85 , Compliant to RoHS Printed in Taiwan,Taipei Contents Power Modules Diode Modules 2 Thyristor Modules 3 Schottky Diode Modules 4 Fast Diode Modules 5 Three Phase Diode , Thyristor Products Diode Products 25-26 FRD Products 27 1 Datasheets available on www.nellsemi.com Power Modules Fast Diode Schottky Diode IGBT Thyristor Diode Power Modules


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2003 - HE6009

Abstract: HJ122 damper diode darlington npn
Text: Schematic C Features · High DC current gain · Built-in a damper diode at E-C B R1 R2 E , ) Capacitance & Reverse-Biased Voltage Safe Operating Area 100000 1000 PT =1ms Collector Current-IC (mA) Capacitance (pF) 10000 100 Cob PT =100ms 1000 PT =1s 100 10 10 1 , 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Dimension and tolerance based on our Spec. dated May. 05


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PDF HE6009 HJ122 O-252 HJ122 HE6009 damper diode darlington npn
2002 - HE6009

Abstract: HJ122
Text: DC current gain · Built-in a damper diode at E-C Absolute Maximum Ratings (Ta=25°C) · Maximum , ) Collector Current (mA) Capacitance & Reverse-Biased Voltage Safe Operating Area 100000 1000 PT =1ms Collector Current-IC (mA) Capacitance (pF) 10000 100 Cob PT =100ms 1000 PT =1s 100 10 , *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Dimension and tolerance based on our Spec. dated


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PDF HE6009 HJ122 HJ122 O-252 HE6009
2003 - HJ127

Abstract: No abstract text available
Text: · Built-in a damper diode at E-C Absolute Maximum Ratings (Ta=25°C) TO-252 · Maximum , Voltage Safe Operating Area 1000 100000 PT =1ms Collector Current-IC (mA) Capacitance (pF) 10000 100 Cob PT =100ms PT =1s 1000 100 10 10 1 0.1 1 10 Reverse-Biased , 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1


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PDF HE6017 HJ127 O-252 HJ127
2001 - PA1730

Abstract: No abstract text available
Text: Current (DC) ID(DC) m 13.0 A ID(pulse) m 52.0 A PT 2.2 W Channel Temperature , 9.5 m MAX. (VGS = ­10 V, ID = ­6.5 A) 0.05 MIN. · Built-in G-S protection diode · Small and , Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Note2 Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW 10 µs, Duty Cycle 1 % 2 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark The diode connected between the gate and source of the transistor


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PDF PA1730 PA1730
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