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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

Diode Marking 1N4004 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - diode 1N4001 specifications

Abstract: No abstract text available
Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability , Weight: 0.35 grams (approx.) Mounting Position: Any Marking : Type Number Lead Free: For RoHS / Lead , Junction Capacitance 1N4001 – 1N4007 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION , 1N4004 -T3 DO-41 5000/Tape & Reel 1N4004 -TB DO-41 5000/Tape & Box 1N4004 DO


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PDF 1N4001 1N4007 DO-41, MIL-STD-202, DO-41 diode 1N4001 specifications
2006 - diode 1N4001 specifications

Abstract: CHARACTERISTICS DIODE 1N4007 free diode 1n4001 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 DIODE 1N4001 WORKING 1N4001 DIODE SPECIFICATIONS 1N400X
Text: 1N4001 ­ 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused , Position: Any Marking : Type Number Lead Free: For RoHS / Lead Free Version, Add "-LF" Suffix to Part , 1N4001 ­ 1N4007 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION TAPING SPECIFICATIONS , -TB DO-41 5000/Tape & Box 1N4003 DO-41 1000 Units/Box 1N4004 -T3 DO-41 5000/Tape & Reel 1N4004 -TB DO-41 5000/Tape & Box 1N4004 DO-41 1000 Units/Box 1N4005-T3 DO


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PDF 1N4001 1N4007 DO-41, MIL-STD-202, DO-41 diode 1N4001 specifications CHARACTERISTICS DIODE 1N4007 free diode 1n4001 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 DIODE 1N4001 WORKING 1N4001 DIODE SPECIFICATIONS 1N400X
2014 - DO-41

Abstract: diode 1N4001 specifications 1n4001
Text: cathode anode Symbol 1 2 1 2 Marking Type number 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Marking code 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Taping , . 4 Marking , resistance Diode junction capacitance Junction to ambient *1 V RRM (V) f=1MHz and applied 4V DC , 1N4004 400 280 400 1N4005 600 420 800 560 1N4007 700 O 50 CJ


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PDF 1N4001 1N4007 MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs. DO-41 diode 1N4001 specifications
2006 - Not Available

Abstract: No abstract text available
Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current , Position: Any Marking : Type Number Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part , 1N4001 – 1N4007 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION TAPING , 1N4004 -T3 DO-41 5000/Tape & Reel 1N4004 -TB DO-41 5000/Tape & Box 1N4004 DO


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PDF 1N4001 1N4007 DO-41, MIL-STD-202, DO-41
2008 - CHARACTERISTICS DIODE 1N4007

Abstract: diode 1N4001 specifications 1N4007 RECTIFIER DIODE specifications of 1n4007 diode DIODE 1N4001 data sheet 1N4007 diode diode cross reference 1N4002 diode 1N4007 specifications 1n4007 diode datasheet DIODE 1N4004
Text: cathode anode Symbol 1 2 1 2 Marking Type number 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Marking code 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Taping , . 4 Marking , RRM (V) *3 VR (V) 1N4001 50 35 100 70 200 140 200 1N4004 400 , . IR V R = V RRM T A = 100 OC Thermal resistance Diode junction capacitance MIN. IO


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PDF 1N4001 1N4007 MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. CHARACTERISTICS DIODE 1N4007 diode 1N4001 specifications 1N4007 RECTIFIER DIODE specifications of 1n4007 diode DIODE 1N4001 data sheet 1N4007 diode diode cross reference 1N4002 diode 1N4007 specifications 1n4007 diode datasheet DIODE 1N4004
2010 - silicon diode 1N4001 specifications

Abstract: 1N4001 rectifier diode 1N4001 specifications
Text: Symbol 1 2 1 2 Marking Type number 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Marking code 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Taping & bulk , . 4 Marking , resistance Diode junction capacitance Storage temperature SYMBOLS *1 V RRM (V) *3 VR (V) 1N4001 50 35 100 70 CJ 200 140 200 1N4004 400 280 400 1N4005


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PDF 1N4001 1N4007 MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1051 silicon diode 1N4001 specifications 1N4001 rectifier diode 1N4001 specifications
2013 - diode cross reference 1N4007

Abstract: diode cross reference 1N4002
Text: Pin1 Pin2 Simplified outline cathode anode Symbol 1 2 1 2 Marking Type number 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Marking code 1N4001 1N4002 1N4003 , . 4 Marking , 100 OC Thermal resistance Diode junction capacitance Junction to ambient *1 V RRM (V) f , 200 1N4004 400 280 400 1N4005 600 420 A I FSM 30 A 800 560


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PDF 1N4001 1N4007 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. diode cross reference 1N4007 diode cross reference 1N4002
ROYALOHM

Abstract: TRANZORB tranzorb diode DIODE 1N4004 equivalent varistor 222, 2KV ag2130 DIODE 1N4004 Overvoltage protection Tranzorb ag2120 PTC Thermistor 33r
Text: take transient overcurrent D2 - 5 = 1N4004 or Diode bridge MB4S or similar D2 Ag1405 , small DC/DC power supply transient overcurrent is taken by clamp diode D2 - 5 = 1N4004 or Diode , which can take transient overcurrent D2 TIP D2 - 5 = 1N4004 or Diode bridge MB4S or similar , overcurrent is taken by clamp diode D2 TIP D2 - 5 = 1N4004 or Diode bridge MB4S or similar R1-2 = , specifying ITU-T K20 D2 TIP D2 - 5 = 1N4004 or Diode bridge e.g. DF04S, MB4S D1 = Sidactor type


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PDF TIA-968-A) GR1089-CORE Ag2120/Ag2130 26AWG Ag2120 Ag2130. ROYALOHM TRANZORB tranzorb diode DIODE 1N4004 equivalent varistor 222, 2KV ag2130 DIODE 1N4004 Overvoltage protection Tranzorb PTC Thermistor 33r
2012 - diode 1N4001 specifications

Abstract: CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics OF 1N4001 DIODE silicon diode 1N4001 specifications CHARACTERISTICS DIODE 1N4006 surge current DIODE 1N4007 Diode Marking 1N4004 1N4007 10A features of DIODE 1N4001
Text: 2 Marking Type number 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Marking code 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Taping & bulk specifications for AXIAL devices 52.4mm 17mm DIA , . 4 Marking , =1MHz and applied 4V DC reverse voltage Reverse current Thermal resistance Diode junction capacitance , C/W pF O C SYMBOLS 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 *3 VR (V) 50 100 200


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PDF 1N4001 1N4007 1000hrs. MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 diode 1N4001 specifications CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics OF 1N4001 DIODE silicon diode 1N4001 specifications CHARACTERISTICS DIODE 1N4006 surge current DIODE 1N4007 Diode Marking 1N4004 1N4007 10A features of DIODE 1N4001
2004 - LM317 spice

Abstract: LM317 spice model Parallel Application LM317 LM317BT luxeon lumiled LM317MOT IC1 LM317 MC33269 spice simulation model electrolytic capacitor JSU23X106AQC
Text: output D Diode ; e.g. 1N4004 C2 Electrolytic capacitor of at least 100 times the value of C1 RL Load , drop of a Zener diode is higher than a standard rectifier such as the 1N4004 . A parallel diode will , 's specified limits of both current and diode junction temperature. LEDs should be used where extremely long , combination of RL and C2. When the input voltage has charged C2 to one diode drop below the Zener diode , through the Zener diode , Z, while capacitor C2 remains charged and the voltage across the load RL remains


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PDF AND8146/D LM317 spice LM317 spice model Parallel Application LM317 LM317BT luxeon lumiled LM317MOT IC1 LM317 MC33269 spice simulation model electrolytic capacitor JSU23X106AQC
2003 - MDA2504

Abstract: diode 1N4004 spice spice TRANSFORMER simulation MDA2504 diode rectifier xfmr spice 1n4004 SPICE 1N4004 bridge rectifier D44H11 Intusoft C320C104K5R5CA
Text: match at lower current, see Figure 2. specified limits of both current and diode junction , 1N4004 , or surface mount MRA4004, diodes in lieu of the single larger bridge rectifier like the MDA2504 , Drop: The typical forward voltage drop of a silicon diode is considered to be between 0.6 and 0.7 , down Vpeak would be 12.7 V. The first "1.4" term in the equation comes from two bridge diode drops , conducting current when the rectified dc voltage (120 Hz haversine) becomes greater than the LED diode


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PDF AND8137/D MDA2504 diode 1N4004 spice spice TRANSFORMER simulation MDA2504 diode rectifier xfmr spice 1n4004 SPICE 1N4004 bridge rectifier D44H11 Intusoft C320C104K5R5CA
1998 - CHARACTERISTICS DIODE 1N4007

Abstract: 1N4007 BL diode LT 1n4007 1N4004 LITEON 1N4007 liteon 1n4004 bl DIODE 1N4001 characteristics l4007 "Power Diode" 1N4007 DIODE 1N4001 WORKING
Text: Conditions Type 1N4001/L 1N4002/L 1N4003/L 1N4004 /L 1N4005/L 1N4006/L 1N4007/L Peak forward , Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Thermal resistance , C D ­ Diode Capacitance ( pF ) IF ­ Forward Current ( A ) 30 1.0 0.1 Tj = 25°C IF , ) Figure 2. Typ. Forward Current vs. Forward Voltage 15574 Tj = 25°C f = 1 MHz 1N4001 ­ 1N4004 , Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Rev. A2, 24-Jun-98 1N4001/L


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PDF 1N4001/L 1N4007/L 1N4001/L 1N4002/L 1N4003/L 1N4004/L 1N4005/L 1N4006/L D-74025 CHARACTERISTICS DIODE 1N4007 1N4007 BL diode LT 1n4007 1N4004 LITEON 1N4007 liteon 1n4004 bl DIODE 1N4001 characteristics l4007 "Power Diode" 1N4007 DIODE 1N4001 WORKING
1994 - ilpi -115

Abstract: PQ2620 220v ac to 3.7v dc converter tdk h7c1 ilpi 031 pn junction DIODE 1N4007 schematic diagram for 220v to 3.7v power supply circuit Electronic ballast 80W pq2625 CHARACTERISTICS DIODE 1N4007
Text: SG3561AM PQ2625/H7C1 Core IRF730, 400V 1N4004 , Diode , 1A 1N4935, Diode , 1A MR854, 3A, 400V HT32, DIAC , R13 16 Component SG3561A PQ262/H7C1 Core IRF830, 500V 1N4004 , Diode , 1A 1N4935, Diode , 1A , 300 R5 51K #22 - AWG 62T R11 560K C7 0.1µF 225V D1 1N4004 D2 1N4004 110K 1/2W C3 68µF 25V R1 2.2M AC+ D5 85 VIN C8 0.1µF MULT 3 IN ACD3 1N4004 D4 1N4004 R2 12K C2 0.01µF M TA (°C) IDET SG3561A C1 1µF 120V 1N4935 GND 6


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PDF SG3561A 90-265VAC 432VDC PQ2620/H7C1 IRFBE42, 1N4007, 1N4935, MR856, F/600V ilpi -115 PQ2620 220v ac to 3.7v dc converter tdk h7c1 ilpi 031 pn junction DIODE 1N4007 schematic diagram for 220v to 3.7v power supply circuit Electronic ballast 80W pq2625 CHARACTERISTICS DIODE 1N4007
2008 - Not Available

Abstract: No abstract text available
Text: low current high voltage diode such as a 1N4004 will be adequate. The second diode is a schottky , its own input and output. An integrated diode is included to help monitor die temperature , High value internal feedback resistors ► Fixed gain of 50V/V ► Integrated silicon diode for , 275V V+, Low voltage positive supply 7.0V V-, Low voltage negative supply Product Marking , -Lead MQFP (FG) 0V to 275V VIN, Analog input signal Top Marking 0V to 5.0V Storage temperature


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PDF HV254 32-Channel HV254 32-channel, 140mV DSFP-HV254 C102208
2013 - Not Available

Abstract: No abstract text available
Text: current high voltage diode such as a 1N4004 will be adequate. The second diode is a schottky diode , ) High value internal feedback resistors Fixed gain of 50V/V Integrated silicon diode for temperature , input and output. An integrated diode is included to help monitor die temperature. The input voltage , Product Marking Top Marking -65°C to 150°C Maximum junction temperature 100-Lead MQFP (top , Min Typ Max Units BW CLOAD Temperature Diode Sym Parameter Conditions PIV


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PDF HV254 32-Channel HV254 32-channel, DSFP-HV254 C070813
2008 - 222 diode

Abstract: Diode Marking 1N4004 1N4004 HV254 HV254FG S 5018 DIODE 1N4004 equivalent HV254FG-G CHARACTERISTICS DIODE 1N4004 SR 9570
Text: diode is connected to VPP. Any low current high voltage diode such as a 1N4004 will be adequate. The , output. An integrated diode is included to help monitor die temperature. Applications The input , feedback resistors Fixed gain of 50V/V Integrated silicon diode for temperature sensing MEMS , voltage negative supply Product Marking -7.0V HVOUT, Output voltage HV254FG LLLLLLLLLL , Marking 0V to 5.0V Storage temperature range -65°C to 150°C Maximum junction temperature


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PDF HV254 32-Channel HV254 32-channel, 140mV DSFP-HV254 C102208 222 diode Diode Marking 1N4004 1N4004 HV254FG S 5018 DIODE 1N4004 equivalent HV254FG-G CHARACTERISTICS DIODE 1N4004 SR 9570
BA100 diode

Abstract: BA102 AAY20 B2M1-5 PH1021 1N2528 GAZ17 BB105 DIODE AA116 OA210 diode
Text: DIODE AND RECT1FJER EQUIVALENTS AND SUBSTITUTES A2K4/5 A2K9 A4/10 A5/2-4 A5/5 A5/6 A5/62 A5/105 , i AA118 AA116 ' AA119 AA118 AA115 AA113. BAV63 t 1N4002 1N4004 1N4004 1N4005 1N4005 1N4006 1N4007 , -118-132-133, AAZ15, AAY28, OAB1-85-91-95, SD38, 1N3B-55, 1S33. BY 126, 1N4003 AAY11. 30P7. 30P1. 1N4004 . , 1N4004 , , iM4003r. 1N4004 . A'EID AE1E 1N4005. AE1F JIN4006. 1N4007. AE1G AE10 BA 127, AE30 BAY61', BAY61. AE50 AE100 BAY45. AE150 BAY46. AE200 BAY46. 1N4001. AM005 AM010 1N4002. AM015 1N4003. AM020 1N4003. 1N4004 . AM 025


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PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 PH1021 1N2528 GAZ17 BB105 DIODE AA116 OA210 diode
2008 - Diode Marking 1N4004

Abstract: VIN11
Text: cathode of the diode is connected to VPP. Any low current high voltage diode such as a 1N4004 will be , per channel) High value internal feedback resistors Fixed gain of 50V/V Integrated silicon diode , : +5.0V and -5.0V. Each channel has its own input and output. An integrated diode is included to help , temperature Value 275V 7.0V -7.0V 0V to 275V 0V to 5.0V -65°C to 150°C 150°C Product Marking Top Marking , 125M//100pF -VPP = 275V -Measured at HVOUT High Voltage Amplifier Output Temperature Diode


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PDF HV254 32-Channel 32-channel, DSFP-HV254 C100108 Diode Marking 1N4004 VIN11
2008 - Diode Marking 1N4004

Abstract: No abstract text available
Text: a 1N4004 will be adequate. The second diode is a schottky diode across V- and DGND where the anode , 45µA per channel) High value internal feedback resistors Fixed gain of 50V/V Integrated silicon diode , : +5.0V and -5.0V. Each channel has its own input and output. An integrated diode is included to help , junction temperature Value 275V 7.0V -7.0V 0V to 275V 0V to 5.0V -65°C to 150°C 150°C Product Marking Top Marking HV254FG LLLLLLLLLL YYWW CCCCCCCC AAA YY = Year Sealed WW = Week Sealed L = Lot Number


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PDF HV254 32-Channel 32-channel, MS-022, DSFP-HV254 B041608 Diode Marking 1N4004
FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 AA119 BB139 1S184 diode BY126 BAY38
Text: DIODE AND RECTI FJER EQUIVALENTS AND SUBSTITUTES A2K4/5 A2K9 A4/10 A5/2-4 A5/5 A5/6 A5/62 A5/105 , AA116 AA119 AA118 AA115 AA113 BAY63 1N4002 1N4004 1N4004 1N4005 1N4005 1N4006 1N4007 1N4001 1N4002 OA70 , , AAZ15, AAY28, 0 A 8 1 -85-91-95, SD38, 1N 38-55, 1S33. BY126, 1N4003 AAY11. 30P7.30P1 1N4004 . 1N4004 , -5-9 B2E1-5-9 B2F1-5-9 B2G1-5-9 B2H1-5-9 1N4002. 1N4003. 1N4004 . 1N4005. 1N4006. 1N4007. BA127. BAY61, 1N3604. BAY61. BAY45. BAY46. BAY46. 1N4001. 1N4002. 1N4003. 1N4003. 1N4004 . 1N4004 . 1N4004 . 1N4004


OCR Scan
PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 AA119 BB139 1S184 diode BY126 BAY38
Not Available

Abstract: No abstract text available
Text: RATING > 0.4J CAPACITANCE IS NO CONCERN 1 μf 120V MOV 180 ohm 1N4004 1N4004 1N4004 , MINIMIZED OPTO ISOLATER PROTECTION LASER DIODE PROTECTION 5V 330 ohm 330 ohm 1N4148 1 , 0.1J TRIAC 2N4400 100 pf 2N6659 LASER DIODE 1N4148 3.9K ohm 330 ohm 2N2222


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PDF IOCS16 DO-15 CLK14 VC06LC18X500 1N4148 2N4400 2N6659 2N2222 VN64GA
2000 - relay 6v 100 ohm

Abstract: relay 5v 100 ohm VN64GA VN64GA datasheet relay 12v 100 ohm IC LM319 datasheet 2N2222 circuit MM74C918 MPF102 Transistor 18V dc 330 ohm relay
Text: 1N4004 1N4004 1N4004 14V 0.4J 0.01 µf32 = TransGuard 30 TransGuard® AVX Multilayer , CAPACITANCE SHOULD BE MINIMIZED OPTO ISOLATER PROTECTION LASER DIODE PROTECTION 5V 330 ohm 330 , 18V 0.1J 5.6V 0.1J TRIAC 2N4400 100 pf 2N6659 LASER DIODE 1N4148 3.9K ohm 330


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PDF IOCS16 DO-15 CLK14 VC06LC18X500 1N4148 2N4400 2N6659 2N2222 VN64GA relay 6v 100 ohm relay 5v 100 ohm VN64GA VN64GA datasheet relay 12v 100 ohm IC LM319 datasheet 2N2222 circuit MM74C918 MPF102 Transistor 18V dc 330 ohm relay
15K05

Abstract: C2390 Sharp Scan mute pin D41N4004 keyboard matrix 18*8
Text: V R,=560kfi Rio = 100kil D,= 1N4004 R2= 1.4kn Ru = iOMn D2= 1N4004 R3 = 470kn Dj= 1N4004 R< = 330kn qi =2N5401 D4= 1N4004 Rs= 2Mfi q2 =2n5550 Ds=1n914 Rs = 220kfi q 3 =2n5550 Ds=1N914 R? = 100kn Qi =2N5401 D7= 1N4004 Rs= 3kO Qs =2N5401 D8 = Zener Diode R9= 3kO Ci =6S/iF C2=390 pF Zi = 120Vr I-watt Zener Diode Z2= 3 to SV, 1/2-watt Zener Diode ■SHARP 189


OCR Scan
PDF LR40994 T-75-Ã 10/20pps 17-digit 1000ms 18-pin T-75-07-07 15K05 C2390 Sharp Scan mute pin D41N4004 keyboard matrix 18*8
2012 - HV254FG

Abstract: No abstract text available
Text: diode is a high voltage diode across VPP and V+. Any low current high voltage diode such as a 1N4004 will be adequate. The second diode is a Schottky diode across V- and PGND. Any low current Schottky diode such as a 1N5817 will be adequate. Acceptable Power Down Sequences 1) Inputs & Anode or 1 , Diode The HV254FG has an integrated silicon diode to help monitor the die temperature if desired. Pin , -pin header Rectifier diode Schottky diode Amplifier array Value 25V, 0.1µF±10% 25V, 0.1µF±10% 500V, 0.01µF±10


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PDF HV254DB1 32-channel HV254FG HV254DB1
relay 5v 100 ohm

Abstract: VN64GA relay 12v 100 ohm relay 6v 100 ohm VN64GA datasheet opto triac MPF102 relay 12v 180 ohm 2N2222 MM74C908
Text: TYPICALLY >14V ENERGY RATING > 0.4J CAPACITANCE IS NO CONCERN 1 f 120V MOV 180 ohm 1N4004 1N4004 1N4004 14V 0.4J 0.01 f32 = TransGuard® 56 TransGuard® AVX Multilayer Transient , OPTO ISOLATER PROTECTION LASER DIODE PROTECTION 5V 330 ohm 330 ohm 1N4148 1 ohm , 2N4400 100 pf 2N6659 LASER DIODE 1N4148 3.9K ohm 330 ohm 2N2222 OUTPUT SIGNAL


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PDF IOCS16 DO-15 CLK14 VC06LC18X500 1N4148 2N4400 2N6659 2N2222 VN64GA relay 5v 100 ohm VN64GA relay 12v 100 ohm relay 6v 100 ohm VN64GA datasheet opto triac MPF102 relay 12v 180 ohm 2N2222 MM74C908
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