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Part Manufacturer Description Datasheet Download Buy Part
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver
LT1158CS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LTC1177CSW Linear Technology IC BUF OR INV BASED MOSFET DRIVER, PDSO18, 0.300 INCH, PLASTIC, SO-18, MOSFET Driver
LTC4444-5IMS8E#PBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver

Depletion MOSFET Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Depletion MOSFET

Abstract: DQ381 d3301d DG303 3301D
Text: MOSFET 20X 22 N-ohannel depletion MOSFET 4 Diodes 5 DG384A - 88 mils— 10 ICMJA 8 Capacitors 2 Resistors 22 P-ohannel depletion MOSFET 87 mils 11 13 14 20X 15 30 N-ohannel depletion MOSFET 4 Diodes Pad , ) T-51-.ll DQ387A -88 mil*— 12 ICMJB 4 Capacitors I Resistor II P-ohannol depletion MOSFET 1 6 6 9 20X 16 N-oharinel depletion MOSFET 2 Diodes 11 87 mil* Pad Funotlon No. 3 Drain 1 4 Souroe 1 5 Input , depletion MOSFET 87 mils 30 N-ohannel depletion MOSFET 4 Diodes Pad Funotlon No. 1 Input 1 3 Drain 3 4


OCR Scan
PDF fl2S4735 DG381A/384A/387A/390A DG180 T-51-11 DG38XA aas473s Depletion MOSFET DQ381 d3301d DG303 3301D
Depletion MOSFET

Abstract: "depletion MOSFET" DG301 DG300A depletion p mosfet DG302
Text: P-ohannel depletion MOSFET " · 22 N-channel depletion MOSFET 4 Diodes > : v ' V DG301A , 13 14 1 ? 20X ICMJB 4 Capacitors .15 N-channel depletion MOSFET 1 Resistor 2 Diodes 11 P-ohannel depletion MOSFET 5-165 1 _ r _ T r_ ( SILICONIX 8254735 SILICONIX INC INC 3 D e , Resistors 22 P-ohannel depletion MOSFET 20X 30 N-ohannel depletion MOSFET 4 Diodes DG303A Pad No , P-ohannel depletion MOSFET 30 N-channel depletion MOSFET 4 Diodes 5-166 -I SILICO'NIX INC Q3


OCR Scan
PDF DG300A/301 /302A/303A T-51-11 DG300A-DG303A /302A/303A DG300A/301A/302A/303A Depletion MOSFET "depletion MOSFET" DG301 DG300A depletion p mosfet DG302
DQ381

Abstract: P-Channel Depletion Mosfet Depletion MOSFET depletion p mosfet vd 5205 LT 5208 DG381AAK
Text: depletion MOSFET 22 N-ohanne! depletion MOSFET 4 Diodes 5 DG384A - 88 m ils- Pad No. 1 3 4 5 6 8 9 10 , 22 P-ohannel depletion MOSFET 30 N-channel depletion MOSFET 4 Diodes 5-205 SILICONIX I N C , Drain 2 12 11 1 6 i 9 20X ICMJB 15 N-ohannel depletion MOSFET 4 Capacitors 2 Diodes I Resistor I I P-channel depletion MOSFET DG390A Pad No. ' 88 m llt1 3 4 5 8 8 9 10 11 13 14 15 16 , Source 1 87 mils 10 11 13 14 15 20X ICMJC 30 N-ohannel depletion MOSFET 8 Capacitors 4


OCR Scan
PDF 152Sc DG381A/384A/387A/390A DG180 DG38XA AE5473S DG381A/384A/387A/390A T-51-11 DQ381 P-Channel Depletion Mosfet Depletion MOSFET depletion p mosfet vd 5205 LT 5208 DG381AAK
depletion MOSFET

Abstract: No abstract text available
Text: then a resistor can be added in series with V|N 3. If the input is AC then a depletion MOSFET may be , possible. However, a dynamic resistor consisting of a depletion MOSFET may be added as depicted in the , package. This method limits the +VM voltage to V DD + V gsioffj of the depletion MOSFET for all input , depletion MOSFET . The worst-case power dissipation in the HV9906 is now given by the equation Power , depletion MOSFET is given by the equation Power Dissipation in MOSFET * (Vs - VD D - V, DD v G S {O F F )X


OCR Scan
PDF 12VDCto400VDC 65VAC 280VAC 130mA. depletion MOSFET
2003 - Not Available

Abstract: No abstract text available
Text: added in series with VIN 3. If the input is AC then a depletion MOSFET may be added in series with VIN 4 , . However, a dynamic resistor consisting of a depletion MOSFET may be added as depicted in the following , resistance of the package. This method limits the +VIN voltage to VDD + VGS(OFF) of the depletion MOSFET , voltage rating of the depletion MOSFET . The worst-case power dissipation in the HV9906 is now given by the , operating at F MAX MOSFET Gate Drive Output tR tF Rise Time Fall Time 75 75 nSec nSec CGATE = 750pF


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PDF HV9906 HV9906 80VAC 135VAC 130mA.
2003 - step up 12v ac to 100v ac 400hz transformer

Abstract: No abstract text available
Text: added in series with VIN 3. If the input is AC then a depletion MOSFET may be added in series with VIN 4 , depletion MOSFET may be added as depicted in the following diagram. Using High Thermal Conductivity , limits the +VI N voltage to VDD + VGS(OFF) of the depletion MOSFET for all input voltages and in fact raises the maximum allowable peak input voltage to the breakdown voltage rating of the depletion MOSFET , ( VDD + VGS( OFF )max ) × IIN and the dissipation in the depletion MOSFET is given by the equation Power


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PDF HV9906 HV9906 130mA. step up 12v ac to 100v ac 400hz transformer
2003 - Depletion MOSFET

Abstract: offline switcher HV9906 HV9906LG HV9906P HV9906X step up 12v ac to 100v ac 400hz transformer ips capacitor 400V to 6V DC Regulator
Text: with VIN 3. If the input is AC then a depletion MOSFET may be added in series with VIN 4 , resistor consisting of a depletion MOSFET may be added as depicted in the following diagram. For an , package. This method limits the +VIN voltage to VDD + VGS(OFF) of the depletion MOSFET for all input , the depletion MOSFET . The worst-case power dissipation in the HV9906 is now given by the equation Power Dissipation HV9906 = ( VDD + VGS( OFF )max ) × IIN and the dissipation in the depletion MOSFET is


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PDF HV9906 HV9906 130mA. Depletion MOSFET offline switcher HV9906LG HV9906P HV9906X step up 12v ac to 100v ac 400hz transformer ips capacitor 400V to 6V DC Regulator
2007 - 7n60s5

Abstract: byv26 equivalent Depletion MOSFET HV9906 DN3145N8 BYV28-200 HV9906LG depletion 400V power mosfet BYV26C STP8NM60
Text: with VIN 3. If the input is AC then a depletion MOSFET may be added in series with VIN 4 , depletion MOSFET may be added as depicted in the following diagram. For an encapsulated application the , the +VIN voltage to VDD + VGS(OFF) of the depletion MOSFET for all input voltages and in fact raises the maximum allowable peak input voltage to the breakdown voltage rating of the depletion MOSFET , = ( VDD + VGS( OFF )max ) × IIN and the dissipation in the depletion MOSFET is given by the


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PDF HV9906 HV9906 1N4148 80VAC 135VAC 1-23V 750mA 7n60s5 byv26 equivalent Depletion MOSFET DN3145N8 BYV28-200 HV9906LG depletion 400V power mosfet BYV26C STP8NM60
2004 - 7N60S5

Abstract: byv26 equivalent HV9906 400V to 6V DC Regulator DC DC converter 400V lighting led lamp circuit diagram Depletion MOSFET depletion 400V power mosfet HV9906P DN2540
Text: added in series with VIN 3. If the input is AC then a depletion MOSFET may be added in series with VIN 4 , dynamic resistor consisting of a depletion MOSFET may be added as depicted in the following diagram. Using , of the package. This method limits the +VIN voltage to VDD + VGS(OFF) of the depletion MOSFET for , voltage rating of the depletion MOSFET . The worst-case power dissipation in the HV9906 is now given by the , FMAX VIN = 12V VIN = 400V Decaying VDD MOSFET Gate Drive Output tR tF Rise Time Fall Time 75 75


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PDF HV9906 HV9906 1N4148 MMBT2907 80VAC 135VAC 1-23V 7N60S5 byv26 equivalent 400V to 6V DC Regulator DC DC converter 400V lighting led lamp circuit diagram Depletion MOSFET depletion 400V power mosfet HV9906P DN2540
2005 - 7n60s5

Abstract: flyback converter DC/DC 400V byv26 equivalent depletion MOSFET 400V voltage regulator HV9906P non-isolate flyback pfc using pwm 7N60 LED-driver 6 pins flyback HV9906
Text: the input is AC then a depletion MOSFET may be added in series with VIN 4. Encapsulating the circuit , depletion MOSFET may be added as depicted in the following diagram. For an encapsulated application the , . This method limits the +VIN voltage to VDD + VGS(OFF) of the depletion MOSFET for all input voltages , depletion MOSFET . The worst-case power dissipation in the HV9906 is now given by the equation Power Dissipation HV9906 = ( VDD + VGS( OFF )max ) × IIN and the dissipation in the depletion MOSFET is given by


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PDF HV9906 HV9906 1N4148 80VAC 135VAC 1-23V 750mA 7n60s5 flyback converter DC/DC 400V byv26 equivalent depletion MOSFET 400V voltage regulator HV9906P non-isolate flyback pfc using pwm 7N60 LED-driver 6 pins flyback
2003 - TDA 16822

Abstract: 04N60C3 equivalent ICE1QS01 equivalent 1QS01 TDA 16888 07N60C3 mosfet transistor TDA 16846 tda 3050 tda 1040 04n60c3
Text: Product Description Voltage Class Page N-Channel Enhancement MOSFET 600 V 21 N-Channel Depletion MOSFET 240 V 23 N-Channel Depletion MOSFET 600 V 23 N-Channel Depletion MOSFET 200 V 23 , MOSFET 800 V 23 N-Channel Enhancement MOSFET 400 V 18 N-Channel Depletion MOSFET 600 V 23 N-Channel Depletion MOSFET 250 V 23 N-Channel Depletion MOSFET 50 V 23 N-Channel Depletion MOSFET 100 , MOSFET drain-source voltage VDS = VI Core demagnetization is no problem The transformer may have a high


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PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent 1QS01 TDA 16888 07N60C3 mosfet transistor TDA 16846 tda 3050 tda 1040 04n60c3
2005 - IXAN0006

Abstract: 0006 Depletion MOSFET IXI859 power factor load pump IXI858 depletion mode power mosfet Zener diode 8,2v active clamp flyback pfc
Text: L1 C4 Depletion MOSFET Rbias Rccs VCC VCAP 1 Vreg UVLO µP 220nF + , circuit, enough The addition of Rccs is used to shift power dissipation away from the depletion MOSFET , the depletion MOSFET will be fixed at a value close to that of Vzener. If the value of HVDCin is large then the voltage drop across the depletion MOSFET and resulting power dissipation can be large , (IXI859) to supply power to a micro-controller, a high current non-inverting MOSFET gate driver, a


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PDF IXAN0006 IXI858 IXI859 IXI858/859 IXAN0006 0006 Depletion MOSFET IXI859 power factor load pump depletion mode power mosfet Zener diode 8,2v active clamp flyback pfc
1995 - P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
Text: Through an NChannel DepletionType MOSFET 6b) Circuit Arrangement for NChannel Depletion MOSFET VDS = , Depletion MOSFET 6d) Family of Output Characteristics for NChannel Enhancement MOSFET Figure 6. 4 , enhancement and depletion modes, and also exist as both n and pchannel devices. The two main FET groups , Not Possible Depletion n MOS p Depletion n Enhancement p n p Figure 1 , buildup of the depletion layer as VDS increases. The curve approaches the level of the limiting current


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PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
1999 - P-Channel Depletion Mosfets

Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
Text: ) Circuit Arrangement for N-Channel Depletion MOSFET VDS = VGS ­ VGS(th) Ohmic Region Characteristics , ) 6c) Family of Output Characteristics for N-Channel Depletion MOSFET 6d) Family of Output , - and p-channel configurations. MOSFETs are available in both enhancement and depletion modes, and , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , Channel N-Drain S D P N Depletion Layer P N-Channel P-Gate G Final form taken by


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PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
1996 - p channel depletion mosfet

Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfets depletion p mosfet
Text: Cross-Section Through an N-Channel Depletion-Type MOSFET 6b) Circuit Arrangement for N-Channel Depletion , N-Channel Depletion MOSFET 6d) Family of Output Characteristics for N-Channel Enhancement MOSFET Figure , both enhancement and depletion modes, and also exist as both n- and p-channel devices. The two main , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , which the maximum IDSS flows. VDS < VP Channel S N-Source D P N N-Drain Depletion


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PDF AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfets depletion p mosfet
P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
Text: N-Channel Depletion-Type MOSFET 6b) Circuit Arrangement for N-Channel Depletion MOSFET VDS = VGS ­ VGS , - and p-channel configurations. MOSFETs are available in both enhancement and depletion modes, and , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , interchangeable. initial rise in ID is related to the buildup of the depletion layer as VDS increases. The , which the maximum IDSS flows. VDS < VP N-Source N-Drain Channel S D P N Depletion


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PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
2002 - 225k 400v capacitor

Abstract: IRFBC30AF Depletion MOSFET ips battery charging 400V to 6V DC Regulator HV9906P VN2460 depletion 400V power mosfet 2N2222 1N4007
Text: the input is AC then a depletion MOSFET may be added in series with VIN 4. Encapsulating the circuit , depletion MOSFET may be added as depicted in the following diagram. For an encapsulated application the , . This method limits the +VIN voltage to VDD + VGS(OFF) of the depletion MOSFET for all input voltages , depletion MOSFET . The worst-case power dissipation in the HV9906 is now given by the equation Power Dissipation HV9906 = ( VDD + VGS( OFF )max ) × IIN and the dissipation in the depletion MOSFET is given by


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PDF HV9906 HV9906 130mA. 225k 400v capacitor IRFBC30AF Depletion MOSFET ips battery charging 400V to 6V DC Regulator HV9906P VN2460 depletion 400V power mosfet 2N2222 1N4007
2002 - 225k 400v capacitor

Abstract: 400V voltage regulator Depletion MOSFET HV9906 step up 12v ac to 100v ac 400hz transformer Sine PWM AC 50HZ 1N4007 2N2222
Text: the input is AC then a depletion MOSFET may be added in series with VIN 4. Encapsulating the circuit , depletion MOSFET may be added as depicted in the following diagram. For an encapsulated application the , . This method limits the +VIN voltage to VDD + VGS(OFF) of the depletion MOSFET for all input voltages , depletion MOSFET . The worst-case power dissipation in the HV9906 is now given by the equation Power Dissipation HV9906 = ( VDD + VGS( OFF )max ) × IIN and the dissipation in the depletion MOSFET is given by


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PDF HV9906 HV9906 130mA. 225k 400v capacitor 400V voltage regulator Depletion MOSFET step up 12v ac to 100v ac 400hz transformer Sine PWM AC 50HZ 1N4007 2N2222
2006 - dimmable Fluorescent BALLAST

Abstract: dali power supply circuit diagram Fluorescent BALLAST IXI859S1 ic driver mosfet for BLDC motor dimmable HID BALLAST IXI858 charge pump mosfet driver external IXTY02N50D hid ballast diagram
Text: (Tube) 2500 (Tape & Reel) HVDCout Blocking Diodes C4 Depletion MOSFET Rccs Rbias , (Tube) 2500 (Tape & Reel) HVDCout Blocking Diodes C4 Depletion MOSFET Rccs Rbias , Depletion-Mode Power MOSFET such as the IXTY02N50D, which can be used to create a constant current source to , not used Used as a input signal to drive the output at pin 5, controlling power MOSFET in a typical power factor correction application. Output for driving external power MOSFET Ground return Charge


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PDF IXI858/IXI859 IXI858S1 IXI859S1 IXI858 IXI859 IXI858/859 120mA 220nF IXI858/IXI859 dimmable Fluorescent BALLAST dali power supply circuit diagram Fluorescent BALLAST IXI859S1 ic driver mosfet for BLDC motor dimmable HID BALLAST charge pump mosfet driver external IXTY02N50D hid ballast diagram
2006 - Buck-Boost Converter advantages

Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
Text: SPB04N50C3 SPB04N60C3 SPB04N60S5 N-Channel Enhancement MOSFET N-Channel Depletion MOSFET N-Channel Depletion MOSFET N-Channel Depletion MOSFET N-Channel Enhancement MOSFET N-Channel Enhancement MOSFET N-Channel Enhancement MOSFET N-Channel Enhancement MOSFET N-Channel Depletion MOSFET N-Channel Enhancement MOSFET N-Channel Depletion MOSFET N-Channel Depletion MOSFET N-Channel Depletion MOSFET , for operating voltage changes Advantages C MOSFET drain-source voltage VDS = VI C Core


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PDF B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
BJT with V-I characteristics

Abstract: P-Channel Depletion Mosfets ECE60L IN60L depletion MOSFET 24vDS P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfet datasheet P-Channel Depletion Mode FET n channel depletion MOSFET
Text: operated either in enhancement mode or in depletion mode. p-type depletion MOSFET operate similarly to p-type enhancement MOSFET expect that Vt > 0 for depletion type and Vt < 0 for the enhancement type , B S S D iD iD G G n-type Depletion MOSFET ECE60L Lecture Notes, Spring 2002 D iD S S p-type Depletion MOSFET 69 NMOS Inverter and Switch The basic NMOS , widely used FETs are Metal-Oxide-Semiconductor FETs (or MOSFET ). MOSFET can be manufactured as


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PDF ECE60L BJT with V-I characteristics P-Channel Depletion Mosfets IN60L depletion MOSFET 24vDS P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfet datasheet P-Channel Depletion Mode FET n channel depletion MOSFET
APP4573

Abstract: MAX4236 MAX5490 MAX6138
Text: depletion MOSFET ) at the 20mA high end of the current range. For brief periods of 20ms or so, the maximum


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PDF MAX4236) MAX4236, MAX5490, MAX6138 MAX4236 com/an4573 AN4573, APP4573, Appnote4573, APP4573 MAX5490
2009 - Si9108

Abstract: PLCC-20 Si9108DJ02 Si9108DW Si9108DW-T1
Text: a constant current. The magnitude of this current is determined by a high-voltage depletion MOSFET , high-voltage depletion MOSFET device which is connected between +VIN and VCC. This start-up circuitry , -mA MOSFET D Internal Start-Up Circuit D SHUTDOWN and RESET D Maximum Duty Cycle of 99.9% DESCRIPTION , 8.0 1 5 V mA MOSFET Switch Breakdown Voltage V(BR)DSS IDRAIN = 100 mA Full rDS , normal operating conditions, an internal undervoltage (UV) lockout circuit keeps the output MOSFET


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PDF Si9108 250-mA Si9108 18-Jul-08 PLCC-20 Si9108DJ02 Si9108DW Si9108DW-T1
Si9108

Abstract: No abstract text available
Text: magnitude of this current is determined by a high-voltage depletion MOSFET device which is connected , depletion MOSFET device which is connected between + VIN and VCC. This start-up circuitry provides initial , €¢ 10 to 120 V Input Range • 200 V, 250 mA MOSFET • Internal Start-Up Circuit • SHUTDOWN and , Input Current Input, Voltage High Input Current Input, Voltage Low MOSFET Switch Breakdown Voltage , conditions, an internal undervoltage (UV) lockout circuit keeps the output MOSFET disabled until VCC exceeds


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PDF Si9108 Si9108 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2005 - Si9108

Abstract: Depletion MOSFET PLCC-20 Si9108DJ02 Si9108DW Si9108DW-T1
Text: a constant current. The magnitude of this current is determined by a high-voltage depletion MOSFET , high-voltage depletion MOSFET device which is connected between +VIN and VCC. This start-up circuitry , -mA MOSFET D Internal Start-Up Circuit D SHUTDOWN and RESET D Maximum Duty Cycle of 99.9% DESCRIPTION , 8.0 1 5 V mA MOSFET Switch Breakdown Voltage V(BR)DSS IDRAIN = 100 mA Full rDS , normal operating conditions, an internal undervoltage (UV) lockout circuit keeps the output MOSFET


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PDF Si9108 250-mA Si9108 08-Apr-05 Depletion MOSFET PLCC-20 Si9108DJ02 Si9108DW Si9108DW-T1
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