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Part Manufacturer Description Datasheet Download Buy Part
LT1077AMJ8/883B Linear Technology IC OP-AMP, 330 uV OFFSET-MAX, 0.25 MHz BAND WIDTH, CDIP8, CERDIP-8, Operational Amplifier
LT1077AMJ8 Linear Technology IC OP-AMP, 330 uV OFFSET-MAX, 0.25 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LT1055ACH#PBF Linear Technology IC OP-AMP, 330 uV OFFSET-MAX, 5 MHz BAND WIDTH, MBCY8, LEAD FREE, METAL CAN, TO-5, 8 PIN, Operational Amplifier
LT1077AMH Linear Technology IC OP-AMP, 330 uV OFFSET-MAX, 0.25 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
LT1077AMH/883B Linear Technology IC OP-AMP, 330 uV OFFSET-MAX, 0.25 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
LT1055ACH Linear Technology IC OP-AMP, 330 uV OFFSET-MAX, 5 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
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DW-11-09-F-T-330 Samtec Inc Avnet - €3.40 €1.00
DW-11-09-F-T-330 Samtec Inc Sager - $2.43 $1.49
DW-11-09-F-T-330 Samtec Inc Samtec - $2.21 $1.22

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Catalog Datasheet MFG & Type PDF Document Tags
1992 - cml fx365

Abstract: FX365 FX365A FX365ADW SMD 365A lg monitor
Text: 110.9 146.2 151.4 156.7 162.2 167.9 173.8 179.9 186.2 192.8 203.5 210.7 , Passband Gain at 1.0kHz ­ w.r.t. 1.0kHz -2.0 Stopband Frequencies ­ Attenuation 33.0 Output Noise


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PDF FX365A D/365A/F/2 FX365 FX365A 24-lead cml fx365 FX365ADW SMD 365A lg monitor
Not Available

Abstract: No abstract text available
Text: 79.7 103.5 136.5 179.9 241.8 82.5 107.2 141.3 186.2 250.3 85.4 110.9 146.2 192.8 N o to ne FX365A , 0.5 250 2 3 33.0 36.0 - 36.0 -54.0 40.0 2.0 950 - - -48.0 -48.0 1 See FX365 Data


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PDF FX365A D/365A/F/2 FX365 FX365A 24pin 24-pin
Not Available

Abstract: No abstract text available
Text: .1 ±7 V - > 2 • Vc» ±7 V < > ft A It IS ■A ♦ t ♦ A » * P. 330 ■W * -r ♦ * ft ft r , «-25t) ft § Symbol Test Com4110« BUI mt. Unit v-f 1 • •/-*««*& Vb&qxü fe,-±10*A. V#f-0. fcts-0 ±7 - •20 V r- Â¥ t • Vi if ic a 1« /c.-±10*A. V«-0. Vcir-0 ±7 — ±10 V r - > l Ä ft * A , » (B 4 t r i f Iff.l Km'-wV. Vc,-4V. 10mA. /-IkHi - 17 »S * a ft * PC V»» - 15V. /,-10«.A. 17 20 - 4B 11 t • at NF Vcj-4V. /-TOMHi 2.2 3.3 4B 0 HITACHI 1109


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PDF 7a-25TJ Com4110Â -100rA
8655-3148

Abstract: FCI Connector 8630 8655-3151 8630-3637A 8630 15 pl 8638PSC1006 HE507 MH1501 8630 93C 15M 8638-PSC-1005
Text: No file text available


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PDF
2006 - K1022

Abstract: No abstract text available
Text: RN1107~ 1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108, RN1109 , voltage Collector-emitter voltage RN1107~ 1109 RN1107~ 1109 RN1107 Emitter-base voltage RN1108 RN1109 Collector current Collector power dissipation Junction temperature Storage temperature range RN1107~ 1109 RN1107~ 1109 RN1107~ 1109 RN1107~ 1109 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 100 150 , 2006-02-07 RN1107~ 1109 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut off current


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PDF RN1107 RN1107, RN1108, RN1109 RN2107 RN1108 K1022
N4857

Abstract: gh 311 IC163 ITR07702 ITR07701 ITR07700 ITR07699 ITR07698 ITR07697 2SC4871
Text: No. N 4 8 5 7 2SC4871 No. N4857 30300 2SC4871 NPN UHF S , fT =10GHz typ , / Ta=25 ICBO IEBO hFE fT Cob S21e2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC , / 12395TS TA-0078 No.4857-1/4 2SC4871 hFE - IC 3 2 fT - IC 2 VCE=5V VCE=5V , fT , -10.3 400 0.835 - 33.0 5.282 145.5 0.065 69.9 0.919 -19.2 600 0.742 , -100.6 4.911 92.1 0.091 61.7 0.583 -32.5 1200 0.254 - 110.9 4.223 85.1


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PDF 2SC4871 N4857 10GHz S21e2 S21e2 N4857 gh 311 IC163 ITR07702 ITR07701 ITR07700 ITR07699 ITR07698 ITR07697 2SC4871
BZW07-10

Abstract: BZW07-110 od10m
Text: ' ft « j mmx c~t»> vR -6v f - 1 MMi 1 ma o_«po , -110 «ZMOTMO* BZW37Z78 HZVW7X3B uvw-l t*e B 5 6 8 10 27 45 110 tt 50 1J0 30 42 1W • 20 43* 71 JO) s ft 5 25 , CAftMfc Tto rrirrtnum aiiil Iingth th» dir^k« ba plioad * it» totto boot at right vygk* ft 0 , - f>° rye* odtf att/xrte pour fypa Mm* 2/4 330 fig. 2 - PmV pub» etmani %v«ua .oh^ - Pm% pjIw , 07 -H. 0-BZW07 - 110.9 TT 5?C" 02657 '7'0 T- // '¿3 : Ffc-to-lb- Poafc pcIm vera* mporantíil pu>w


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PDF BZW07-10 B2W07-110 fc-10* BZW07-110 od10m
RN1107

Abstract: RN1108 RN1109 RN2107
Text: V V Translation frequency RN1107~ 1109 fT VCE =10V, IC = 5mA 250 MHz , RN1107~ 1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 , voltage RN1107~ 1109 VCBO 50 V Collector-emitter voltage RN1107~ 1109 VCEO 50 V , RN1107~ 1109 Ic 100 mA Collector power dissipation RN1107~ 1109 Pc 100 mW Junction temperature RN1107~ 1109 Tj 150 °C Storage temperature range RN1107~ 1109 Tstg


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PDF RN1107 RN1108 RN1109 RN2107 RN1107 RN1108 RN1109
1109

Abstract: No abstract text available
Text: RN1107,1108, 1109 {RN1107) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT , RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage RN1107- 1109 VCBO 50 Collector-Emitter Voltage RN1107- 1109 VCEO 50 RN1107 6 Emitter-Base Voltage RN1108 7 vebo RN1109 15 Collector Current RN1107- 1109 XC 100 Collector Power Dissipation R N 1107-U 09 PC 100 Junction Temperature RN1107- 1109 Tj 150 -5 5 -1 5 0 Storage Temperature Range RN1107- 1109 Tstf? UNIT V V V mA mW °C °C 93


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PDF RN1107 RN1107) RN2107 RN1108 RN1109 RN1107--1109 RN1107-1109 1109
Not Available

Abstract: No abstract text available
Text: . [mm] À .055(1.40] DIA O . 330 [8.38] f .394[10.00] ,437[ 11.09 ] .250(6.35] - , C R f G Mf C A LN S fT H Rocker Switches LS-Series The L S-Series Softspot illu m in ated rocker switches feature a three-color high brightness light sequence, from a single lamp. These switches are designed with a standard nylon snap-in bracket and “Drip-Dry” construction that protects the front panel from dust and moisture. S p e c ific a tio n s • Dielectric Strength: 1,000 V


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PDF 25V/NEON 50V/NEON 00D12b3
Not Available

Abstract: No abstract text available
Text: 28 - 1107 27 26 25 24 23 22 1108 1109 1v nn II01Q 1v ss |CP4 22 NC* CP1 CPO VDD CP2 NC* IO OI , . Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 ( ft


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PDF MC143120FE2/D 143120FE2 MC143120FE2 MC143120B1 11-Pin 3-14-2Tatsumi
2001 - RN1107

Abstract: RN1108 RN1109 RN2107 1109 1109 pc
Text: RN1107~ 1109 fT VCE =10V, IC = 5mA 250 MHz Collector output capacitance , RN1107~ 1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 , voltage RN1107~ 1109 VCBO 50 V Collector-emitter voltage RN1107~ 1109 VCEO 50 V , RN1107~ 1109 Ic 100 mA Collector power dissipation RN1107~ 1109 Pc 100 mW Junction temperature RN1107~ 1109 Tj 150 °C Storage temperature range RN1107~ 1109 Tstg


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PDF RN1107 RN1108 RN1109 RN2107 RN1107 RN1108 RN1109 1109 1109 pc
1999 - transistor kt 925

Abstract: Kt 0912 2SC4871
Text: Ordering number:EN4857 NPN Epitaxial Planar Silicon Transistor 2SC4871 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions · High cutoff frequency : fT , IEBO DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Forward , 0.974 ­10.3 400 0.835 ­ 33.0 5.282 145.5 0.065 69.9 0.919 ­19.2 600 , 1000 0.291 ­100.6 4.911 92.1 0.091 61.7 0.583 ­32.5 1200 0.254 ­ 110.9


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PDF EN4857 2SC4871 10GHz S21e2 2059B 2SC4871] transistor kt 925 Kt 0912 2SC4871
Not Available

Abstract: No abstract text available
Text: 25 24 23 22 1108 1109 1v nn II01Q 1v ss |CP4 22 NC* CP1 CPO VDD CP2 NC* IO OI SERVICE | 21 20 , . 852-26629298 ( ft ) M O T O ffO L A u A ii- n o n c o / n MC143120E2/D


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PDF MC143120E2/D C143120E2 MC143120E2 MC143120B1 11-Pin 824E-02 MC143120E2DW MC143120E2FBdesign 3-14-2Tatsumi
Not Available

Abstract: No abstract text available
Text: 22 1108 1109 1v nn II01Q 1v ss |CP4 ^ 6 7 8 9 10 11 12 13 14 15 16 IO OI SERVICE I v s , Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 ( ft ) M O T O ffO L A MC143120LE2/D


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PDF MC143120LE2/D 143120LE2 MC143120LE2 3-14-2Tatsumi
r2137

Abstract: No abstract text available
Text: A T IN G S (Ta = 25°C) SYMBOL RATING UNIT CHARACTERISTIC V 50 RN1107- 1109 VCBO Collector-Base Voltage V 50 Collector-Emitter Voltage RN1107- 1109 VCEO 6 RN1107 V Emitter-Base Voltage 7 RN1108 Ve b o 15 RN1109 mA 100 Collector Current RN1107- 1109 ic mW 100 Collector Power Dissipation RN1107- 1109 PC °C 150 RN1107- 1109 Tj Junction Temperature -5 5 -1 5 0 °C Storage Temperature Range RN1107- 1109 Tstg 711 , RN1107- 1109 Current RN1I07 Em itter Cut-off RN1I08 Current RN1109 RN1107 DC Current Gain RN1108 RN1109


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PDF RN1107-RN1109 RN2107 RN1107 RN1108 RN1109 RN1107-1109 r2137
2007 - Not Available

Abstract: No abstract text available
Text: RN1107~ 1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108, RN1109 , Collector-base voltage Collector-emitter voltage RN1107~ 1109 RN1107~ 1109 RN1107 Emitter-base voltage RN1108 , RN1107~ 1109 RN1107~ 1109 RN1107~ 1109 RN1107~ 1109 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 , ~ 1109 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut off current RN1107~ 1109 , saturation voltage RN1107~ 1109 RN1107 Input voltage (ON) RN1108 RN1109 RN1107 Input voltage (OFF) RN1108


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PDF RN1107 RN1107, RN1108, RN1109 RN2107 RN1108
Not Available

Abstract: No abstract text available
Text: 6.03 7.31 8.92 12.14 5.50 6.68 8.15 11.09 6 10 15 25 Ft . Ft . Ft . Ft . 6.55 7.95 9.70 13.20 6 .0 3 7.31 8.92 12.14 5.50 6.68 8 .1 5 11.09 6 10 15 25 Ft . Ft . Ft . Ft . 6.55 7.95 9.70 13.20 6.03 7.31 8.92 12.14 5.50 6 .6 8 8.15 11.09 6 10 15 , 5 11.09 6 10 20 30 6 10 Ft . Ft . Ft Ft . Ft . Ft . 7.95 9.55 13.55 17.55 7,95 , MODEL_ DESCRIPTION-GENDER_ LGT/ FT 1-9 ~ 10-24 25-99 I Premium DIN &


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PDF
2001 - RN1107

Abstract: RN1108 RN1109 RN2107
Text: RN1107~ 1109 fT VCE =10V, IC = 5mA 250 MHz Collector output capacitance , RN1107~ 1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 , Collector-base voltage RN1107~ 1109 VCBO 50 V Collector-emitter voltage RN1107~ 1109 VCEO , current RN1107~ 1109 Ic 100 mA Collector power dissipation RN1107~ 1109 Pc 100 mW Junction temperature RN1107~ 1109 Tj 150 °C Storage temperature range RN1107~ 1109 Tstg


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PDF RN1107 RN1108 RN1109 RN2107 RN1107 RN1108 RN1109
C 2109 RM TO-3

Abstract: No abstract text available
Text: Transition Frequency RN1107- 1109 fT V c e - 1 0 V , I q = 5mA — 250 Collector Output , €” 1109 VCBO 50 V Collector-Emitter Voltage RN1107- 1109 VCEO 50 V RN1107 Emitter-Base Voltage RN1108 6 Ve b o RN1109 7 V 15 Collector Current RN1107- 1109 ic 100 mA Collector Power Dissipation RN1107— 1109 PC 100 mW Junction Temperature RN1107- 1109 Tj 150 °C Storage Temperature Range RN1107- 1109 T stg -5 5-150 °C


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PDF RN1107 RN1109 RN1107, RN1108, RN2107 RN1107 RN1108 RN1107â C 2109 RM TO-3
2006 - 700-HT22AU120

Abstract: 800T-N1 700-HA32A1 800T-N320G 700-HT12AU120 800T-N169 800T-N320R 599-FR04 700-HT12BU120 1494F-P1
Text: 512V/513V/1102C/ 1109 /1232V/1233V Vacuum Starters, Combination Starters, and Pump Controls Panels Table of Contents Table of Contents Description Page Catalog Number Explanation (1102C & 1109 , . 5 Bulletin 1109 Vacuum Open-Type Starter , . 25 Visit our website: www.ab.com/catalogs 3 Bulletins 1102C/ 1109 Vacuum Contactors , 1102C ­ B a O D 93 c d e b 1109 ­ B a O D ­ EEJ c b d a c


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PDF 500-SG006B-EN-P 500-SG-006A-EN-P 700-HT22AU120 800T-N1 700-HA32A1 800T-N320G 700-HT12AU120 800T-N169 800T-N320R 599-FR04 700-HT12BU120 1494F-P1
2009 - SAE-AS7928

Abstract: SAE-AS-7928 59974-1 AMP 59974-1 AMP 59250 1804700-1 amp tyco 69120 53548-1 Power Unit 69120-2 certi-crimp
Text: .312 7.92 .281 7.13 .685 17.4 .844 21.44 53409-1 _ .469 11.91 .437 11.09 .841 21.37 1.078 27.39 53410-1 53410-2 .469 11.91 .437 11.09 .841 21.37 1.078 , 17.4 .844 21.44 53418-1 53418-2 .469 11.91 .437 11.09 .841 21.37 1.078 27.39 53419-1 _ .469 11.91 .437 11.09 .841 21.37 1.078 27.39 53420-1 _ .531 13.49 , 53983-1 _ .531 13.49 .437 11.09 1.028 26.12 1.296 32.92 53984-1 _ .219 5.56


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PDF Resistant/150 SAE-AS7928. SAE-AS7928 SAE-AS-7928 59974-1 AMP 59974-1 AMP 59250 1804700-1 amp tyco 69120 53548-1 Power Unit 69120-2 certi-crimp
Not Available

Abstract: No abstract text available
Text: 0.25 mA VCE (sat) 0.3 RN1109 Transition frequency RN1107 to 1109 fT Collector output , RN1107~ 1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108 , Rating Unit Collector-base voltage RN1107 to 1109 VCBO 50 V Collector-emitter voltage RN1107 to 1109 VCEO 50 V RN1107 Emitter-base voltage RN1108 6 VEBO 7 V 15 RN1109 Collector current RN1107 to 1109 IC 100 mA Collector power


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PDF RN1107 RN1107, RN1108, RN1109 RN2107 RN1107 RN1108
RN1107

Abstract: RN1108 RN1109 RN2107
Text: frequency RN1107~ 1109 fT VCE =10 V, IC = 5 mA 250 MHz Collector output , RN1107~ 1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108 , Unit Collector-base voltage RN1107~ 1109 VCBO 50 V Collector-emitter voltage RN1107~ 1109 VCEO 50 V RN1107 Emitter-base voltage RN1108 6 VEBO 7 V 15 RN1109 Collector current RN1107~ 1109 Ic 100 mA Collector power dissipation RN1107~ 1109 Pc


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PDF RN1107 RN1107, RN1108, RN1109 RN2107 RN1107 RN1108 RN1108 RN1109
Not Available

Abstract: No abstract text available
Text: screws Length (mm) ATS- 1109 -C2-R0 5 (M3 Philips Pan Head) at 5, 6 and 8 mm lengths ATS- 1109 -C3-R0 6 ATS- 1109 -C4-R0 8 Thermal Performance AIR VELOCITY THERMAL RESISTANCE FT /MIN M/S , maxiFLOWTM Heat Sink for Full Brick DC-DC Converter ATS PART # ATS- 1109 -C1-R0 Features & Benefits »» High performance maxiFLOWTM design features less pressure drop and more surface area that maximizes the effective convection (air) cooling *Image is for illustration purposes only. »» Hole


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PDF ATS-1109-C1-R0 ATS-1109-C2-R0 ATS-1109-C3-R0 ATS-1109-C4-R0
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