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LTC1040MJ Linear Technology IC DUAL COMPARATOR, 750 uV OFFSET-MAX, 80000 ns RESPONSE TIME, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18, Comparator
LTC1040CJ Linear Technology IC DUAL COMPARATOR, 750 uV OFFSET-MAX, 80000 ns RESPONSE TIME, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18, Comparator
LT1078S16 Linear Technology IC DUAL OP-AMP, 750 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1112CS8 Linear Technology IC DUAL OP-AMP, 750 uV OFFSET-MAX, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier
LT1079S Linear Technology IC QUAD OP-AMP, 750 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1055CH#PBF Linear Technology IC OP-AMP, 750 uV OFFSET-MAX, 4.5 MHz BAND WIDTH, MBCY8, LEAD FREE, METAL CAN, TO-5, 8 PIN, Operational Amplifier
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DW-10-19-L-D-750 Samtec Inc Avnet - $2.19 $1.69
DW-10-19-L-D-750 Samtec Inc Sager - $2.08 $1.25
DW-10-19-L-D-750-LL Samtec Inc Newark element14 100 $3.53 $1.65
DW-10-19-L-D-750-LL Samtec Inc Sager 62 $2.17 $1.34
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DW-1019LD750LL Samtec Inc Avnet - $2.39 $1.79

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2000 - BC 677

Abstract: Z80S183 Z80182 Z80183 transistor BC 945 0000FE5B transistor pcr 406 diode jr 702 0000FEFE 0000FEFA
Text: Vector: rstxxvec: push push ld ld jr ; ; ; ; ; ; xx = 10, 18, 20 etc save hl save af , : xrst: ld pop ex ret h,a af (sp),hl 21 Copyright © 2000 Nomadic Communications. All Rights , ;-global _FlashErase _FlashErase: push de push hl push bc ld de, 0 ld (FlashAddr),de xor a ; Clear the result status ld (FlashStatus),a out0 (BBR),a ; Select the first bank ld ld ld ld ld ld ld ld ld ld ld ld FlashEraseWait: ld ld bit jr bit jr ld bit last time jp ld ld


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PDF Z80S183 BC 677 Z80182 Z80183 transistor BC 945 0000FE5B transistor pcr 406 diode jr 702 0000FEFE 0000FEFA
hexfets

Abstract: 100V Single P-Channel HEXFET MOSFET
Text: Qgs Qgd *d(on) V ^(off) tf ld V p o = -50V, lD « -6.0A, RG = 750 Measured from center of drain , q q applied and V p g = 0 during irradiation per MIL-STD- 750 , method 1019 . (D This test is , during irradiation per MIL-STD- 750 , method 1019 . <3> H-113 IRHE9130 Device Radiation , MIL-STD- 750 , test method 1019 . International Rectifier has imposed a standard gate voltage of -1 2 volts , MIL-STD- 750 , method 1019 . ® Total Dose Irradiation with V p § Bias. V q s = 05 rated BVpgg (pre-radiation


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PDF IRHES13Q 1x105 150OC MIL-STD-750, H-114 hexfets 100V Single P-Channel HEXFET MOSFET
Not Available

Abstract: No abstract text available
Text: Irradiation per MIL-STD- 750 , method 1019 . ® ® (E) Total D o w Irradiation w ith V q s B I u V q s , tested in a low dose rate (total dose) environment per MIL-STD- 750 , test method 1019 . International , Bias. -12 volt V q 5 applied and V p s = 0 during irradiation per MIL-STD- 750 , method 1019 , 0 during Irradiation per MIL-STD- 750 , method 1019 . <1i) H-70 , * 0-® x Max. Rating, Vq § = 0V Units V V/°C Test Conditions Vq s = 0V, lD = -1.0 mA Reference to 25


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PDF IRH9130 1x105 MIL-STD-750,
Not Available

Abstract: No abstract text available
Text: V q d * -50V, lD = -6.5A, Rq - 7.50 5.0 " " nH LS internal Source Inductance 13 Measured , q s applied and V d s = 0 during irradiation per MIL-STD- 750 , method 1019 . ® This test is , during irradiation per MIL-STD- 750 , method 1019 . (Q) H H-153 IRHF9130 Device Radiation , ) environment per MIL-STD- 750 , test method 1019 . International Rectifier has imposed a standard gate voltage of , volt V q s applied and V q s 0 during irradiation per MIL-STD- 750 , method 1019 . Total Dose Irradiation


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PDF IRHF913Q 1x10s 1x105 1x1012 oper-140 MIL-STD-750,
LG direct drive motor

Abstract: H273 025Q 200A1 DOT055 H271 h274 IRHN7054 IRHN8054
Text: during irradiation per MIL-STD- 750 , method 1019 . ® Total Dote Irradiation with Vqs Bias. Vqs - 0.8 rated BVqqs (pre-radlation) applied and Vq§ ■0 during irradiation per MIL-STD- 750 , method 1019 , (total dose) environment per MIL-STD- 750 , test method 1019 . International Rectifier has imposed a , applied and Vqs = 0 during irradiation per MIL-STD- 750 , method 1019 . ® Total Dose Irradiation with VDS , (on) Static Drain-to-Source On-State Resistance - 0.025 a VGS . 12V, lD . 26A _ 0.028 VGS . 12V


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PDF IRHN7054 IRHN8054 1x106 1x105 00A//zS, MIL-STD-750, H-274 LG direct drive motor H273 025Q 200A1 DOT055 H271 h274 IRHN8054
025Q

Abstract: IRH7054 IRH8054
Text: Vqq = 0 during irradiation per mil-std- 750 , method 1019 . This test is performed using a flash x-ray , ) environment per MIL-STD- 750 , test method 1019 . International Rectifier has imposed a standard gate voltage of , during irradiation per MIL-STD- 750 , method 1019 . ® Total Dose Irradiation with Vqs Bias. Vqs - 0.8 x rated BVqss (pre-radiallon) applied and Vqs = 0 during irradiation per MIL-STD- 750 , method 1019 . This , 35 VDD - 30V, lD = 45A, RQ - 2.350 tr Rise Time - - 240 ns fd(off) Turn-Off Delay Time - - 85


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PDF IRH7Q54 IRH8054 1x105 ci45A MIL-STD-750, 025Q IRH7054 IRH8054
100-C

Abstract: IRHE9130 h112 hexfets 1x105
Text: 0 during irradiation per MIL-STD- 750 , method 1019 . (D Total Dote Irradiation with Vpg Bias. Vqs = 0.8 rated BVqss (pre-radiation) applied and Vqs = 0 during irradiation pei MIL-STD- 750 , method 1019 , and Vqs * 0 during Irradiation per MIL-STD- 750 , method 1019 . ® Total Dose irradiation with VDg Bias , to 25°C, Id = - .0 mA RDS(on) Static Drain-to-Source On-State Resistance - - 0.30 !1 Vqs . -12V, lD , Gate-to-Source Leakage Reverse - - 100 VQS - +20V °g Total Gate Charge - - 34.8 VQS - -12V, lD = -6.0A Qgs


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PDF 1x105 1x1012 MIL-STD-750, H-114 100-C IRHE9130 h112 hexfets
H336

Abstract: h337 Rad Hard in MOSFET
Text: V q s applied and V p g * 0 during irradiation per MIL-STD- 750 , method 1019 . © Total Dose , per MIL-STD- 750 , method 1019 . @ (3) H-337 IRHN9130 Device Radiation Performance of , volt V q s applied and V q s " 0 during irradiation per MIL-STD- 750 , method 1019 . This test is , during irradiation per MIL-STD- 750 , method 1019 . H-338 , Conditions V q s - OV, Id " 10 mA Reference to 250C, I d - 1.0 mA VGS = -12V, lD = -5.0A _


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PDF IRHN913Q 1x105 1x1012 MIL-STD-750, H-338 H336 h337 Rad Hard in MOSFET
h268

Abstract: H269
Text: 0 during irradiation per MIL-STD- 750 , method 1019 . (§) This test is performed using a flash , (pre-radiation) applied and V q s = 0 during irradiation per MIL-STD- 750 , method 1019 . © 3 . 7 8 ( 0 .1 4 9 , ) environment per MIL-STD- 750 , test method 1019 . International Rectifier has imposed a standard gate voltage of , MIL-STD- 750 , method 1019 . (D Total Dose Irradiation with V q § Bias. Vd s " 0.8 rated BVq s s (pre*radiation) applied and Vq q * 0 during irradiation per MIL-STD- 750 , method 1019 . ® © (Tj) H-270


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PDF IRHM9150 1x105 1x1012 MIL-STD-750, H-270 h268 H269
Not Available

Abstract: No abstract text available
Text: with V q s -12 volt Vq3 applied and V^s - 0 during irradiation per MiL-STD- 750 , method 1019 .  , irradiation per MIL-STD- 750 , method 1019 . Repetitive Rating; Pulse width limited by maximum junction , ) environment per MIL-STD- 750 , test method 1019 . International Rectifier has imposed a standard gate voltage , applied and V q s “ 0 during irradiation per MIL-STD- 750 , method 1019 . Study sponsored by NASA , Reference to 25*C, \q - - 1.0 mA VG S “ -12V. ID = -7.0A _ ® Vq s - -12V, lD - -11A vGS(th


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PDF IRHM913Q 1x105 1x105 MIL-STD-750,
H265

Abstract: TO-254AA Package H266
Text: volt Vq § applied and V qq » 0 during irradiation per MIL-STD- 750 , method 1019 . Total Dose Irradiation , MIL-STD- 750 , method 1019 . d) This test is performed using a flash x-ray source operated in the , MIL-STD- 750 , test method 1019 . International Rectifier has imposed a standard gate voltage of -1 2 volts , = 0 during irradiation per MIL-STD- 750 , method 1019 . (D This test is performed using a flash , ft.A - -2 5 0 V q s = 0.8 x Max- Rating VGS = 0V, T j = 125°C Vq s = -20V VGS = +20V VGS = -12V, lD =


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PDF IRHM913Q 1x105 1x1012 MIL-STD-750, H-266 H265 TO-254AA Package H266
Not Available

Abstract: No abstract text available
Text: 0 during irradiation per MIL-STD- 750 , method 1019 . V q s * 0.8 x rated BVq s s (pre-radiation) applied and Vq s » 0 during irradiation per MIL-STD- 750 , method 1019 . Suggested R q = 2350 This , ) environment per MIL-STD- 750 , test method 1019 . International Rectifier has imposed a standard gate voltage , Irradiation per MIL-STD- 750 , method 1019 . H-74 542 ■Vq s Bias (V) +5 ® This test is , applications. -12 volt V q s applied and V q s - 0 during Irradiation per MIL-STD- 750 , method 1019 . V q


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PDF IRH91SO 1x105 1x105 1x1012 MIL-STD-750, 235ft
Not Available

Abstract: No abstract text available
Text: irradiation per MIL-STD- 750 , method 1019 1 SD £ 45A, di/dt s 200 N^s, V d q s BVdss- t J 3 150°c 5 , q s applied and V q s = 0 during irradiation per MIL-STD- 750 , method 1019 . Is o ^ 45A, * /d t  , per MIL-STD- 750 , method 1019 . H' 6 , ) mA VGS = 1ZV- ID = 32A — V q s = 12V. lD - 45A 25 — 250 V VDS * VGS- to â , nA - - Vq s = 20V VGS = -20V VGS = 12V, lD = 45A nC 35 VDS - O x Max. Rating '5


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PDF IRH7054 IRH8054 MIL-STD-750,
H188

Abstract: No abstract text available
Text: MIL-STD- 750 , method 1019 . @ VDD This test is performed using a flash x-ray source operated in the , low dose rate (total dose) environm ent per M IL-STD - 750 , test m ethod 1019 . International R ectifier , per MIL-STD- 750 , method 1019 . 0 ® ® Is o s 36A, di/dt £ 200 VDD s BVDSS, T j s 150 , (pre-radiation) applied and V q § - 0 during irradiation per MIL-STD- 750 , method 1019 . (tj) H-190 , Drain-to-Source - - V q s " 12V< ID - 30A Q V q s - 12V, lD - 35A V VDS " VGS- Id " 10 mA VDS a 15V, lDS


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PDF IRHM7054 IRHM8054 1x106 1x105 MIL-STD-750, H-190 H188
Not Available

Abstract: No abstract text available
Text: (pre-radiation) applied and V q s * 0 during irradiation per MIL-STD- 750 , method 1019 . (Tj) Suggested R q « , low dose rate (total dose) environment per MIL-STD- 750 , test method 1019 . International Rectifier has , with Vq s Bias. -12 volt Vq s applied and Vq s » 0 during irradiation per MIL-STD- 750 , method 1019 , during irradiation per MIL-STD- 750 , method 1019 , (0) H-74 , (0) VGS - -12V, lD - -21A Vd s VGS' to * -1 -° mA VDS a ~15V- tos * -13A @ Vq s « 0.8 x Max. Rating


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PDF IRHS15Q 1x10s 1x1012 MIL-STD-750,
mc 9880

Abstract: No abstract text available
Text: and V[>§ - 0 during irradiation per MIL-STD- 750 , method 1019 . (£) Total Doae Irradiation with , MIL-STD- 750 , method 1019 . H-69 4Û5545E 00107=13 355 K/W ® IRH9130 Device Radiation , dose) environment per MIL-STD- 750 , test method 1019 . International Rectifier has imposed a standard , MIL-STD- 750 , method 1019 . H-70 4 B 55 45 2 0 0 1 0 ? ^ This test is performed using a flash , volt V3 3 applied and V q s « 0 during irradiation per MIL-STD- 750 , method 1019 . ISD * -11A, di/dt


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PDF IRHS130 1x105 1x105 1x1012s MIL-STD-750, 15Q0C mc 9880
Not Available

Abstract: No abstract text available
Text: = 0 during irradiation per MIL-STD- 750 , method 1019 . Total Dose Irradiation with Vq s Bias , tested in a low dose rate (total dose) environment per MIL-STD- 750 , test method 1019 . International , Vos " 0 during irradiation per MIL-STD- 750 , method 1019 . Ita M Dose Irradiation with V q s Bias , – - 1.0 mA Vq s - -12V, lD - -13A Vq s - -12V, lD - -2 1 A _ 0 vQS(th , -2 0 V Qa total Gate Charge - - 200 Vq s - -12V, lD - Go. Gate-to-Souice


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PDF IRHM915Q 1x105 1x105 1x1012 MIL-STD-750,
Not Available

Abstract: No abstract text available
Text: s applied and Vd s “ ® during irradiation per MIL-STD- 750 , method 1019 . ® Study sponsored , MIL-STD- 750 , test method 1019 . International Rectifier has imposed a standard gate voltage of 12 volts , during irradiation per MIL-STD- 750 method 1019 . IgD * 35A. di/dt £ 200 A/pS, Vd d * bv Ds s . Tj , Conform s to JEDEC O utline TO -254AA“ Dimensions in Millimeters and (Inches) * lD lim ited by pin , (typical) Weight * lD lim ited by pin diam eter Electrical Characteristics @ tj = 230c


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PDF IRHM7054 IRHM8Q54 1x106 1x105 1x106 MIL-STD-750
Not Available

Abstract: No abstract text available
Text: MIL-STD- 750 , method 1019 . © ® Itotal D ose Irradiation with V q s Bias. V q s " 0-8 rated B V ^ s s (pre-radiation) applied and V q s - 0 during irradiation per MIL-STD- 750 , method 1019 . (jj , irradiation per M IL-STD- 750 , method 1019 . +12 <0) © IS D ^ 4 2 A di/dt < 200A/iiS, V d d ^ B V d s , Test Conditions - 0V, lD = 1.0 m A Drain-to-Source Breakdow n Voltage ^T j ABVd Temperature , Gate Voltage Drain Current 2 .0 V D S = V G S * >D = V DS * Vq s mA 15 - 15V, lD S =


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PDF IRHN7054 IRHN8Q54 1x10s IL-STD-750, 00A/iiS, H-274
H-341

Abstract: No abstract text available
Text: Bias. + 12 volt V q s applied and V q s = 0 during irradiation per MIL-STD- 750 , method 1019 , 0 during irradiation per MIL-STD- 750 , method 1019 . (it; H-341 IRHN9150 Device Radiation , MIL-STD- 750 , test method 1019 . International Rectifier has imposed a standard gate voltage of -12 volts , irradiation per MIL-STD- 750 , method 1019 . © © Ig o S -18A, d i/d t s -140A/jiS. V d d ; B V q s s , T , q s s (pre-radiation) applied and V q s = 0 during irradiation per MIL-STD- 750 , method 1019 . (2


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PDF IRHN915Q 1x105 MIL-STD-750, -140A/jiS. H-342 H-341
Not Available

Abstract: No abstract text available
Text: irradiation per MIL-STD- 750 , method 1019 . © This test is performed using a flash x-ray source operated , per MIL-STD- 750 , method 1019 . ® H-5 IRH7054, IRH8054 Devices Radiation Performance of RAD , manufacturing lot is tested in a low dose rate (total dose) environment per MIL-STD- 750 , test method 1019 , during irradiation per MIL-STD- 750 , method 1019 . Total Dose Irradiation with V q § Bias. V q s = 0.8 x rated BV q s S (pre-radiation) applied and V q s « 0 during irradiation per MIL-STD- 750 , method 1019


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PDF IRH7054 IRH8054 1x106 1x105 MIL-STD-750,
Not Available

Abstract: No abstract text available
Text: 1019 . VDS = 0.8 rated BVOSS (pre-radiation) applied and VGS = 0 during irradiation per MIL-STD- 750 , — -2.0 2.2 — — — — ““ LD Gate-to-Source Leakage Forward , Capacitance •GSS IGSS Qp < Qas Qad ld (on) tr td(off) tf — — — — — — â , V V/°C VGS = -12V, lD = -2.4A VGS = -12V, Id =-4.0A u V VDS = VGS. ID = -1 -0 mA sto» v d , Turn-On Time | Intrinsic tum-on time s negligible. Tum-on speed is substantially controlled by Ls + Ld .


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PDF IRHF9230
MIL-STD-750

Abstract: MIL-STD-750 2072
Text: Bond Strength Evaluation i.a.w. 2037 of MIL-STD- 750 Total Dose Irradiation i.a.w. method 1019 of MIL-STD- 750 , dose= 100 kRAD, Drain shorted to Source, VGS= 10V Total Dose Irradiation i.a.w. method 1019 , specified) SYM B O L b v dss CONDITIONS VG S = 0 V, lD = 1 mA MIN 200 TYP. MAX UNIT V , = 12V, lD = 28A lD = 25A V DS> 10 V; lD = 50 A 0.043 26 32 4400 900 280 0.050 0.093 S PF , 560 ns VG S = 12 V, VD S = 100V, lD = 44 A nC Qg= Q qd VsD If = ls> VG S= 0 V lF


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PDF MX043J MX043G FSC260R 1012RAD MX043J) MX043G) 1042B MIL-STD-750 MIL-STD-750 MIL-STD-750 2072
vij smd diode

Abstract: No abstract text available
Text: (total dose) environment per M IL-STD- 750 , test method 1019 . International Rectifier has imposed a , volt Vg S applied and Vos = 0 during irradiation per MIL-STD- 750 , method 1019 . ® Total Dose Irradiation , Reference to 25°C, Ip = 1.0 mA VGS = 12V, Id = 6.5A VGS = 12V, IQ = 10.4A u V os =V gS , lD = 1.0 mA VDS , n V S « HA IGSS IGSS Qg ÖQS Qad td(on) tr tdioffi tf ld Gate-to-Source Leakage Forward , by Ls + Ld . Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board


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PDF IRHN2C50SE IRHN7C50SE vij smd diode
Not Available

Abstract: No abstract text available
Text: i.a.w. 2037 o f MIL-STD- 750 RADIATION EVALUATION Total Dose Irradiation i.a.w. method 1019 o f MIL-STD- 750 , dose= 100 kRAD, Drain shorted to Source, VGS= 10V Total Dose Irradiation i.a.w. method 1019 , 0 V, lD = 1 m A A B V dss/AT j UNIT V tbd V/°C B reakdow n Voltage Gate T hre sh o ld Voltage v GS(th) G ate-to-Source Leakage Current 5.0 V V V T, = 25°C ±100 nA T, = 125°C ±200 VG = 0 V S T j = 25°C T j = 125°C 25 250 V G 12V, lD 2 8


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PDF MX043J MX043G FSC260R MX043J) MIL-STD-750 1042B MIL-STD-750
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