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LTC1040CJ Linear Technology IC DUAL COMPARATOR, 750 uV OFFSET-MAX, 80000 ns RESPONSE TIME, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18, Comparator
LTC1040MJ Linear Technology IC DUAL COMPARATOR, 750 uV OFFSET-MAX, 80000 ns RESPONSE TIME, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18, Comparator
LT1078S16 Linear Technology IC DUAL OP-AMP, 750 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1112CS8 Linear Technology IC DUAL OP-AMP, 750 uV OFFSET-MAX, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier
LT1079S Linear Technology IC QUAD OP-AMP, 750 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1022AMH Linear Technology IC OP-AMP, 750 uV OFFSET-MAX, 8.5 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
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43403

Abstract: FRF6766D FRF6766H FRF6766M FRF6766R CGQD
Text: Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad (Si) 2 X 1012 Neutrons 30 A, 200 V , rated drain voltage for both SEU and a prompt gamma level of 2 x 1012 rads (Si)/second. These MOSFETs , V, lD = 19 A — 0.070 0.085 O Resistance1 VGS = 10 V, Id = 19 A, Tc = 125°C — — 0.153 , €” Output Capacitance Cos® Vgs = 0, Vos = 25 V, f = 1 MHz — 750 — pF Reverse-Transfer Capacitance , Qqrn Vdd= 100 V, Id = 30 A 88 230 330 Gate-Plateau Voltage Vgp Method 3471 from Mil-Std- 750 , Cond. A


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PDF FRF6766M, FRF6766D, FRF6766R, FRF6766H FRF6766M FRF6766D FRF6766R FRF6766H 1000K 43403 CGQD
voltis

Abstract: FRL6796D FRL6796H FRL6796M FRL6796R
Text: Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad (Si) 2 x 1012 Neutrons 8 A, 100 V , rated drain voltage for both SEU and a prompt gamma level of 2 x 1012 rads (Si)/second. These MOSFETs , V, lD = 1 mA 100 — — Gate-Threshold Voltage VGS(th] Vds = Vgs, Id = 1 mA 2 — 4 V Gate-Body , 125°C — — 0.35 Forward Transconductance1 gts VDS = 15 V, lD = 5 A — 5.5 — s Input , Gate-Charge Total Qgm VDD = 50 V, Id = 8 A 24 45 80 Gate-Plateau Voltage Vgp Method 3471 from Mil-Std- 750


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PDF FRL6796M, FRL6796D, FRL6796R, FRL6796H FRL6796M FRL6796D FRL6796R FRL6796H 1000K voltis
92CS-43394

Abstract: FRK6766D FRK6766H FRK6766M FRK6766R uls12
Text: Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad (Si) 2 X 1012 Neutrons N-CHANNEL , gamma level of 2! x 1012 rads (Si)/second. These MOSFETs are well suited for applications exposed to , Delay Time to(on) — — 35 Rise Time t, Vod = 100 V, lD = 19 A^Zo = 4.7 n (See Figs. 11 & 12) — â , 3 5.5 8 Gate Charge Q» 48 90 125 nC Gate-Charge Total Qflm Vdd= 100 V, lD = 30 A 88 160 215 Gate-Plateau Voltage V»p Method 3471 from Mil-Std- 750 ,Cond.A 4.5 6.4 7.5 V Gate-Source Charge Qg. (See Fig


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PDF FRK6766M, FRK6766D FRK6766R, FRK6766H FRK6766M FRK6766R FRK6766H 1000K 92CS-43357 92CS-43394 uls12
43403

Abstract: CLN-300 FRK6766D FRK6766H FRK6766M FRK6766R 92CS-43398 10-35* DIODE
Text: Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad (Si) 2 X 1012 Neutrons N-CHANNEL , gamma level of 2! x 1012 rads (Si)/second. These MOSFETs are well suited for applications exposed to , Delay Time to(on) — — 35 Rise Time t, Vod = 100 V, lD = 19 A^Zo = 4.7 n (See Figs. 11 & 12) — â , 3 5.5 8 Gate Charge Q» 48 90 125 nC Gate-Charge Total Qflm Vdd= 100 V, ld = 30 A 88 160 215 Gate-Plateau Voltage V»p Method 3471 from Mil-Std- 750 ,Cond.A 4.5 6.4 7.5 V Gate-Source Charge Qg. (See Fig


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PDF FRK6766M, FRK6766D FRK6766R, FRK6766H FRK6766M FRK6766R FRK6766H 1000K 92CS-43357 43403 CLN-300 92CS-43398 10-35* DIODE
43403

Abstract: FRK6766D FRK6766H FRK6766M FRK6766R 10-35* DIODE uls12 92CS-43398 1E1A
Text: Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad (Si) 2 X 1012 Neutrons N-CHANNEL , gamma level of 2! x 1012 rads (Si)/second. These MOSFETs are well suited for applications exposed to , Delay Time to(on) — — 35 Rise Time t, Vod = 100 V, lD = 19 A^Zo = 4.7 n (See Figs. 11 & 12) — â , 3 5.5 8 Gate Charge Q» 48 90 125 nC Gate-Charge Total Qflm Vdd= 100 V, ld = 30 A 88 160 215 Gate-Plateau Voltage V»p Method 3471 from Mil-Std- 750 ,Cond.A 4.5 6.4 7.5 V Gate-Source Charge Qg. (See Fig


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PDF FRK6766M, FRK6766D FRK6766R, FRK6766H FRK6766M FRK6766R FRK6766H 1000K 92CS-43357 43403 10-35* DIODE uls12 92CS-43398 1E1A
B20S

Abstract: FRK6764D FRK6764H FRK6764M FRK6764R TA9798
Text: V, lD = 38 A" 2.7 1. Pulse Test: Pulse Width < 300 ps, Duty Cycle S 2%. 2. Neutron Dose 1 x 1012 , Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad (Si) 2 x 1012 Neutrons N-CHANNEL , Gate-Plateau Voltage V„p Method 3471 from Mil-Std- 750 ,Cond.A 4.5 7 8.2 V Gate-Source Charge Qg. (See Fig. 13 , '4'5 — 0.055 Resistance1 FRK6764R Vos = 12 V, lD = 24 A3'4'5 — 0.060 O FRK6764H Vos = 16 V, Id = 12 A3'4'5 — 0.125 All Vos = 10 V, lD = 24 A2 — 0.060 FRK6764M Vos = 10 V, Id = 38 A3


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PDF FRK6764M, FRK6764D FRK6764R, FRK6764H FRK6764M FRK6764R FRK6764H 1000K B20S TA9798
BJ10A

Abstract: BJ75C SMBJ170A SMBJ130A BJ12C BJ16C BJ70C 1670 SM BJ16 SMBJ8.5CA
Text: ) (see diagram on page 6 for wave form) 1.5 Watt Steady State ; Response time: 1 X 10-12 secs , junction UL94V(0) (Thermoset) Epoxy. · Terminals: Solder plated solderable per MIL-STD- 750 Method 2026 · , SM BJ24A SM BJ26 SM BJ26A SM BJ28 SM BJ28A KH KK KL KM KN KP KQ KR KS KT KU KV KW KX KY KZ LD LE LF , SMBJ60C DH 60.0 SMBJ60CA DK 60.0 SMBJ64C DL 64.0 SMBJ64CA DM 64.0 SMBJ70C DN 70.0 SMBJ70CA SMBJ75C DQ 75.0 , 71.10 90.10 71.10 81.80 77.80 98.60 77.80 89.50 83.30 105.70 83,30 75.0 95.80 86,70 78.0 109.80 78.0


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PDF
1998 - ky 201 thyristor

Abstract: SMBJ8.5CA thyristor s 1210 bh TVS marking LZ ON SMBJ15A KD 502 lm 7410 thyristor bt 136 crydom series cy SMBJ11CA
Text: provide high-speed protection to prevent damage · Terminals: Solder plated solderable per MIL-STD- 750 , state grated circuits. · Response time: 1 X 10-12 s (theoretical) · Forward surge rating: 100 A , KV KW KX KY KZ LD LE LF LG LH LK LL LM LN LP LQ LR LS LT LU LV LW LX LY LZ , 75.0 75.0 78.0 78.0 85.0 85.0 90.0 90.0 100.0 100.0 110.0 110.0 120.0 120.0 130.0 130.0


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PDF SMBJ170CA D0214AA UL94V MIL-STD-750 ky 201 thyristor SMBJ8.5CA thyristor s 1210 bh TVS marking LZ ON SMBJ15A KD 502 lm 7410 thyristor bt 136 crydom series cy SMBJ11CA
2003 - SMBJ8.5CA

Abstract: SMBJ15A SMBJ11CA SMBJ100A SMBJ58A SMBJ14CA SMBJ17A SMBJ130CA SMBJ170A SMBJ130A
Text: state q Response time: 1 x 10-12 secs (theoretical) q Forward surge rating: 100A, 8.3 ms single half , Terminals: Solder plated solderable per MIL-STD- 750 Method 2026 q Solderable leads: 230°C for 10 seconds. q , SMBJ28A SMBJ30 SMBJ30A SMBJ33* KD KE KF KG KH KK KL KM KN KP KQ KR KS KT KU KV KW KX KY KZ LD LE LF LG , 43.0 43.0 45.0 45.0 48.0 48.0 51.0 51.0 54.0 54.0 58.0 58.0 60.0 60.0 64.0 64.0 70.0 70.0 75.0 75.0


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PDF SMBJ188CA SMBJ40C SMBJ40CA SMBJ43C SMBJ43CA SMBJ45C SMBJ45CA SMBJ48C SMBJ48CA SMBJ51C* SMBJ8.5CA SMBJ15A SMBJ11CA SMBJ100A SMBJ58A SMBJ14CA SMBJ17A SMBJ130CA SMBJ170A SMBJ130A
SMBJ8.5CA

Abstract: SMBJ11CA SMBJ15A SMBJ64A SMBJ100A SMBJ58A SMBJ14CA SMBJ17A SMBJ130CA SMBJ170A
Text: for wave form) ■Response time: 1 X 10-12 secs (theoretical) ■Forward surge rating: 100A, 8.3 , 0 .0 7 6 M UL94V(0) (Thermoset) Epoxy. ■Terminals: Solder plated solderable per MIL-STD- 750 , SMBJ12 LD SMB J12C BD 12.0 13.30-16.90 1 5.0 22.0 27.3 SMBJ12A LE , 5.0 113.0 5.3 SMBJ75 NQ SMBJ75C DQ 75.0 83.30- 105.70 1 5.0 134.0 4.5 SMBJ75A NR SMBJ75CA DR 75.0 83.30 - 95.80 1 5.0 121.0 4.9 SMBJ78


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PDF SMBJ170CA SMBJ160A SMBJ160CA SMBJ170 SMBJ170C SMBJ170A SMBJ170CA SMBJ8.5CA SMBJ11CA SMBJ15A SMBJ64A SMBJ100A SMBJ58A SMBJ14CA SMBJ17A SMBJ130CA SMBJ170A
2002 - SMBJ8.5CA

Abstract: DI 944 KD SMBJ15A SMBJ11CA SMBJ20A SMBJ100A SMBJ58A SMBJ17A SMBJ130CA SMBJ170A
Text: state G Response time: 1 x 10-12 secs (theoretical) G Forward surge rating: 100A, 8.3 ms single half , Terminals: Solder plated solderable per MIL-STD- 750 Method 2026 G Solderable leads: 230°C for 10 seconds. G , SMBJ28A SMBJ30 SMBJ30A SMBJ33* KD KE KF KG KH KK KL KM KN KP KQ KR KS KT KU KV KW KX KY KZ LD LE LF LG , 43.0 43.0 45.0 45.0 48.0 48.0 51.0 51.0 54.0 54.0 58.0 58.0 60.0 60.0 64.0 64.0 70.0 70.0 75.0 75.0


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PDF SMBJ188A SMBJ40C SMBJ40CA SMBJ43C SMBJ43CA SMBJ45C SMBJ45CA SMBJ48C SMBJ48CA SMBJ51C* SMBJ8.5CA DI 944 KD SMBJ15A SMBJ11CA SMBJ20A SMBJ100A SMBJ58A SMBJ17A SMBJ130CA SMBJ170A
SMBJ8.5CA

Abstract: SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ14CA SMBJ58A SMBJ100A SMBJ64A
Text: * Response time: 1 X 10-12 secs (theoretical) * Forward surge rating: 100A, 8.3 ms single half sine-wave , solderable per MIL-STD- 750 M ethod 2026 ® Solderable leads: 230°C for 10 seconds. * Marking: cathode band , KV KW KX KY KZ LD LE LF LG LH LK LL LM LN LP LQ LR LS LT LU LV LW LX LY LZ MD ME MF MG MH MK ML SMBJ5 , 45.0 48.0 48.0 51.0 51.0 54.0 54.0 58.0 58.0 60.0 60.0 64.0 64.0 70.0 70.0 75.0 75.0 78.0 78.0 85.0


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PDF SMBJ58C SMBJ58CA SMBJ60C SMBJ60CA SMBJ64C SMBJ64CA SMBJ70C SMBJ70CA SMBJ75C SMBJ75CA SMBJ8.5CA SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ14CA SMBJ58A SMBJ100A SMBJ64A
2002 - SMBJ8.5CA

Abstract: SMBJ11CA SMBJ15A SMBJ64A SMBJ100A SMBJ58A SMBJ14CA SMBJ17A SMBJ130CA SMBJ170A
Text: state G Response time: 1 x 10-12 secs (theoretical) G Forward surge rating: 100A, 8.3 ms single half , Terminals: Solder plated solderable per MIL-STD- 750 Method 2026 G Solderable leads: 230°C for 10 seconds. G , SMBJ28A SMBJ30 SMBJ30A SMBJ33* KD KE KF KG KH KK KL KM KN KP KQ KR KS KT KU KV KW KX KY KZ LD LE LF LG , 43.0 43.0 45.0 45.0 48.0 48.0 51.0 51.0 54.0 54.0 58.0 58.0 60.0 60.0 64.0 64.0 70.0 70.0 75.0 75.0


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PDF SMBJ188A SMBJ40C SMBJ40CA SMBJ43C SMBJ43CA SMBJ45C SMBJ45CA SMBJ48C SMBJ48CA SMBJ51C* SMBJ8.5CA SMBJ11CA SMBJ15A SMBJ64A SMBJ100A SMBJ58A SMBJ14CA SMBJ17A SMBJ130CA SMBJ170A
Not Available

Abstract: No abstract text available
Text: GO LD 30 10 GO LD u" u" FLA SH u" u" FLA SH P C 99/A C T U A L COLOR PC 99/A C T U A L COLOR P C 99/A , 3 8 .3 0 2 4 .6 0 1 6 .2 0 4 9 .8 6 3 3 .2 4 1 9 .3 9 1 1 .0 8 30 10 G O LD 30 10 G OLD u" u , 360 10.12 11.55 15-15 28 10 280 9.73 11. 16 25-25 20 10 200 9.53 11.01 37-37 16 10 160 10.10 11.53


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PDF 31MAR2000
Not Available

Abstract: No abstract text available
Text: 365m m (H ONLY) o cn 550 650 750 1,000 550 650 750 1,000 250 250 300 350 350 400 450 550 650 750 1,000 550 650 750 17.600 20,600 27,000 40,000 17,600 20,800 27 , _ 1,000 O □û: . Ld L d O MI V PS -■Ori loom O q I- Q £Ê S 1 1 ïfc EER BOX , 450 550 650 750 1,000 PPQ (PCS/BAG) POS PART NUMBER 16,000 Pf ^ 5P 4P 3P 2P 5P 4P , Ld L d O MI V PS -■Ori ^ U EO loom q I- Q £ 1S 1 ïfc Ê -JLlIÜ- , iS 5 t


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PDF 470mm 178mm 6P-16P 16-JUL-2004 16-JUL-2Ã
N8230B

Abstract: H309 N8230
Text: 0B x Max. Rating Vq s - OV, T j - 125°C Vq s - 20V Vq s -20V V q s - 12V, lD - 6.0A nA nC Vd s * 0 5 x Max- bating See Fig. 23 and 31 VD d - 100V, lD - 6.0A, Rq - 750 See Fig. 28 Modified , » Ofld tdioni V tdiofft tf Ld Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total , V V/*C Test Conditions ® V q s - 0V, lD - I j O mA Reference to 25°C, Iq - 1.0 mA V q s - 12V, lD , center of drain pad to die. rH _ VQS - 12V, lD - 6.0A V os VGS< !d * 1-0 mA @ V S(0) *iA _


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PDF IRHN7230 IRHN8S30 1x105 1x106 H-309 IRHN7230, IRHN8230 102l---------------------------------50 H-310 N8230B H309 N8230
IRHN7450SE

Abstract: No abstract text available
Text: surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation , €” — 50 tdfoff) Turn-Off Delay Time — — 100 tf Fall Time — — 60 ld Internal Drain , Turn-On Time Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by Ls + Ld , (total dose) environment per MIL-STD- 750 , test method 1019. International Rectifier has imposed a , . High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads


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PDF IRHN7450SE IRHN7450SE
2007 - amcc CDR

Abstract: FEC 10G CDR STS-192 S19233 S19227 S19205 S19204 S19203 S19202 S19260
Text: Differential TIAs (Center Tap Option) · Input Sensitivity of 10 mV p-p (one wire or two wire) at 10-12 BER · , 16 AMCC S19261 AMCC TIA ORX OTX LD 10G Clk data System Block Diagram with the


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PDF S19261 STS-192 16-bit S19261 PB2030 amcc CDR FEC 10G CDR S19233 S19227 S19205 S19204 S19203 S19202 S19260
Not Available

Abstract: No abstract text available
Text: €” - V — 0.6 — - V/°C Test Conditions (y) VGS - 0V, lD “ IX) mA Reference to 25°C, Iq = 10 mA V q S - 12V, lD - 5.0A 0.45 — RDS(on) Static Drain-to-Source , . Rating, Vq s = 0V V q s = 0-8 * Max. Rating V q S - OV, Tj = 125°C VGS = 12V, lD = 9.0A 150 Gate-to-Source Charge <> S VGS = 20V Vq s - -20V -100 QgS _ V q s = 12V, lD = 9.0A V nC , MIL-STD- 750 , test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts


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PDF IRHN7450 IRHN8450 1x106 H-333 IRHN7450, IRHN8450 5S452 H-334
Not Available

Abstract: No abstract text available
Text: ) 36.7(1.445) 28.7(1.130) 24 33.00(1.299) 39.7(1.563) 4 A for A W G # 2 4 25.7( 1.012 , 300H BT2R serie s, 3.00mm latch'n lock, side entry, dip so ld e r header, dual row, with pegs T H E


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PDF 300HBT2RXX
Not Available

Abstract: No abstract text available
Text: 64 59 6,524 6,024 6,950 6,450 7,250 6, 750 260 240 6- 5 3 3 2 8 5 - 0 5-533285-9 , ,950 4,450 3,950 3,650 3,450 2,950 6,250 5, 750 5,250 4, 750 4,250 3,950 3, 750 3,250 6 , ,450 5,950 1, 750 5,550 2,450 8,250 7, 750 7,250 6, 750 6,250 40 192 68 300 280 260 , ,524 4,024 3,524 3,224 3,024 2,524 5,450 4,950 4,450 3,950 3,650 3,450 2,950 5, 750 5,250 4, 750 4,250 3,950 3, 750 3,250 200 180 160 140 128 120 100 E B ,900 4,700


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PDF DIME85-3 31MAR2000
FRM6758H

Abstract: FRM6758D FRM6758M FRM6758R
Text: Radiation-Hardened MOSFETs File Number 2171 FRM6758M, FRM6758D FRM6758R, FRM6758H Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad (Si) 2 x 1012 Neutrons N-CHANNEL , rated drain voltage for both SEU and a prompt gamma level of 2 x 1012 rads (Si)/second. These MOSFETs , Method 3471 from Mil-Std- 750 ,Cond.A 4.5 6 7.5 V Gate-Source Charge Q». (See Fig. 13) 2.2 5.7 8 nC , , Id = 6 A3,4,5 — 0.50 Q FRM6758H Vos = 16 V, lD = 4 A3'4'5 — 0.75 All Vas = 10 V, Id = 6 Az


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PDF FRM6758M, FRM6758D FRM6758R, FRM6758H FRM6758M FRM6758R FRM67S8H 1000K FRM6758H
1996 - IRHI7360SE

Abstract: No abstract text available
Text: LS + LD . - - - - - - 1.4 750 16 V ns µC Thermal Resistance Parameter , devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and , 4.5 - 50 250 V V/°C IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source , MlL-STD- 750 , test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts , testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec


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PDF IRHI7360SE IRHI7360SE
IRHG7110

Abstract: MO-036AB 31VDS
Text: Resistance - - 070 VGS - 12V, ld . 0.60A - - 0.80 Vqs - 12V, ld - 1.0A vGSfth> Gate Threshold Voltage , 11 VGS = 12V, lD - 1.0A Qgs Gate-to-Source Charge - - 3.0 nC Vos = 050 x Max. Rating Qad , , ld a 1.0A, Rq = 240 tr Rise Time - - 25 •dioff) Turn-Off Delay Time — — 40 See Fig. 24 If Fail Time — — 40 LD Internal Drain Inductance 4.0 nH Measured from the drain lead, 6mm , (total dose) environment per MIL-STD- 750 , test method 1019. International Rectifier has imposed a


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PDF IRHG711Q 1x10s 1x1012 H-184 IRHG7110 H-185 MO-036AB 31VDS
1996 - IRHNA7360SE

Abstract: No abstract text available
Text: devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and , IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source , turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD . - - - - - - 1.4 750 16 V ns µC Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case , dose) environment per MlL-STD- 750 , test method 1019. International Rectifier has imposed a standard


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PDF IRHNA7360SE IRHNA7360SE
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