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LTC1040MJ Linear Technology IC DUAL COMPARATOR, 750 uV OFFSET-MAX, 80000 ns RESPONSE TIME, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18, Comparator
LTC1040CJ Linear Technology IC DUAL COMPARATOR, 750 uV OFFSET-MAX, 80000 ns RESPONSE TIME, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18, Comparator
LT1078S16 Linear Technology IC DUAL OP-AMP, 750 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1112CS8 Linear Technology IC DUAL OP-AMP, 750 uV OFFSET-MAX, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier
LT1079S Linear Technology IC QUAD OP-AMP, 750 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1055CH#PBF Linear Technology IC OP-AMP, 750 uV OFFSET-MAX, 4.5 MHz BAND WIDTH, MBCY8, LEAD FREE, METAL CAN, TO-5, 8 PIN, Operational Amplifier
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DW-06-20-L-D-750 Samtec Inc Avnet - $1.26 $0.98
DW-06-20-L-D-750 Samtec Inc Sager - $1.14 $0.69
DW-06-20-L-D-750-LL Samtec Inc Avnet - $1.36 $1.06
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Catalog Datasheet MFG & Type PDF Document Tags
Motorola MRF183

Abstract: ADC 808 NF 948 motorola e1000 motorola MOSFET 935 MRF183SR1 MRF183S MRF183 905 motorola IRL 724 N
Text: Voltage (Vqs = 28 Vdc, Id = 250 mAdc) VGS(Q) 3 'ig—' 5 Vdc Drain-Source On-Voltage (VGS = 10V, lD = 3 A , T-Line. 0.160" x 0.320" x 0.620 C4, C13 47 pf Chip Capacitor Tapered Line C5, C12 47 pF Chip Capacitor Z5 T-Line, 0.650" x 0.620 " C6, C11 0.8-8.0 pF Trim Capacitor Z6 T-Line, 0.020" x 0.620 " C7, C8 10 , . C I; 0.011 -20 0.895 -177 700 0.935 177 !l.0.64 !;. ":!§8 0.011 -17 0.901 -178 750 0.937 , .lipsi'*' *!:, 30 0.007 -22 0.878 -172 700 0.943 178 ,1. % *1|Ì7 0.008 -14 0.888 -173 750


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PDF MRF183/D MRF183/D Motorola MRF183 ADC 808 NF 948 motorola e1000 motorola MOSFET 935 MRF183SR1 MRF183S MRF183 905 motorola IRL 724 N
LG direct drive motor

Abstract: H273 025Q 200A1 DOT055 H271 h274 IRHN7054 IRHN8054
Text: DIMENSIONS 11.55 (0.455) 11.31 (0.445) 3.81 (0.150) 3.31 (0.130) . .630) 15.75 0.620 ) I 5.20 (0.205) 4.95 (M - 2-PLCS ^9.27(0.365) DOT055) . 1.27 (0.050) ^l.tëîôiW) 2-PLCS 16.00 (0.630) 15.75 ( 0.620 , (on) Static Drain-to-Source On-State Resistance - 0.025 a VGS . 12V, lD . 26A _ 0.028 VGS . 12V, lD - 42A vGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS - VGS' 'D = 10 mA gfs Forward , 30V, ld - 42A, Rq - 2.358 tr Rise Time - - 240 ns tyoff) Turn-Off Delay Time - - 85 «f Fall


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PDF IRHN7054 IRHN8054 1x106 1x105 00A//zS, MIL-STD-750, H-274 LG direct drive motor H273 025Q 200A1 DOT055 H271 h274 IRHN8054
Not Available

Abstract: No abstract text available
Text: contained herein is subject to change without notice. 1997 06-20 - 1/13 TOSHIBA BLOCK DIAGRAM A , 06-20 - 2/13 TOSHIBA TC55V2001F/FT/T R/ST/SR-85,-10,-85L,-1 Pi pe RECOMMENDED OPERATING , 0.2 V VDD = 2.0 to 3.6 V V dd ld - ¿ 3 L = 3.3V + 0.3V -85L.-10L -85,-10 -85L.-10L -85,-10 , PF UNIT Note: This parameter is periodically sampled and is not 100% tested. 1997 06-20 - 3 , measurements: 1.5 V Reference level: 1.5 V tR, tF: 5 ns 1997 06-20 - 4/13 TOSHIBA TIMING DIAGRAMS


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PDF 144-WORD TC55V2001 F/FT/TR/ST/SR-85 TC55V2001F/FT/TR/ST/SR 152-bit TC55V2001F/FT/T R/ST/SR-85 32-P-0820-0 32-P-0
Not Available

Abstract: No abstract text available
Text: 365m m (H ONLY) o cn 550 650 750 1,000 550 650 750 1,000 250 250 300 350 350 400 450 550 650 750 1,000 550 650 750 17.600 20,600 27,000 40,000 17,600 20,800 27 , _ 1,000 O □û: . Ld L d O MI V PS -■Ori loom O q I- Q £Ê S 1 1 ïfc EER BOX , 450 550 650 750 1,000 PPQ (PCS/BAG) POS PART NUMBER 16,000 Pf ^ 5P 4P 3P 2P 5P 4P , Ld L d O MI V PS -■Ori ^ U EO loom q I- Q £ 1S 1 ïfc Ê -JLlIÜ- , iS 5 t


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PDF 470mm 178mm 6P-16P 16-JUL-2004 16-JUL-2Ã
Not Available

Abstract: No abstract text available
Text: 28 Vdc, lD = 250 mAdc) Drain-Source On-Voltage (VGS = 10 V, lD = 3 A) Forward Transconductance (VDS = , -Line, 0.200" x 0.080" T-Line, 0.570" x 0.120" T -Line, 0.610" x 0.320" T-Line, 0.160" x 0.320" x 0.620 " Tapered Line T-Line, 0.650" x 0.620 " T -Line, 0.020" x 0.620 " T-Line, 0.270" x 0.320" T-Line, 0.130" x , V) lD = 1.5 A f MHz 20 30 40 50 60 70 80 90 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 S 11 ISitl 0.954 0.941


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PDF MRF183 MRF183S
Not Available

Abstract: No abstract text available
Text: 64 59 6,524 6,024 6,950 6,450 7,250 6, 750 260 240 6- 5 3 3 2 8 5 - 0 5-533285-9 , ,950 4,450 3,950 3,650 3,450 2,950 6,250 5, 750 5,250 4, 750 4,250 3,950 3, 750 3,250 6 , ,450 5,950 1, 750 5,550 2,450 8,250 7, 750 7,250 6, 750 6,250 40 192 68 300 280 260 , ,524 4,024 3,524 3,224 3,024 2,524 5,450 4,950 4,450 3,950 3,650 3,450 2,950 5, 750 5,250 4, 750 4,250 3,950 3, 750 3,250 200 180 160 140 128 120 100 E B ,900 4,700


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PDF DIME85-3 31MAR2000
Leaded Magnetics and Inductors

Abstract: IRF power mosfets catalog dale ihd-3 Irf 1540 N SRF 2769 irf 3719 34051 fet irf 1507 data sheet 2SF 826 transistor IRF 9734
Text: 125.0 115.0 100.0 90.0 80.0 75.0 0.18 0.22 0.30 0.40 0.55 0x.85 1.0 1.2 590 535 455 , 39.0 43.0 47.0 51.0 56.0 62.0 68.0 75.0 82.0 91.0 100.0 110.0 120.0 130.0 150.0 160.0


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PDF vsD-db0058-0112 Leaded Magnetics and Inductors IRF power mosfets catalog dale ihd-3 Irf 1540 N SRF 2769 irf 3719 34051 fet irf 1507 data sheet 2SF 826 transistor IRF 9734
Not Available

Abstract: No abstract text available
Text: Id = 1 rnA Id = 1 .5 A x R D S ( o n ) max 2 3 2 4.5 2.5 V Û A ID ( o n ) > lD (on , e Rise Tim e Turn-on C urrent Slope V Dd = 225 V lD = 2 .5 A Rg = 1 5 0 V gs - 10 V (see test , V lD = 4 A V Gs = 10 V 45 33 200 60 42 ns ns A/(is (d i/dt) on Qg Qgs Q gd Total , 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 0.551 0.116 0.620 0.260 0.154 0.151 -


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PDF mTP3N60 MTP3N60FI TP3N60 TP3N60FI MTP3N60FI
801R4BN

Abstract: 801R2BN APT801R2BN
Text: Drain-Source Voltage 750 800 801R4BN 750 800 UNIT Volts Continuous Drain Current 9.0 , MAX 800 750 Volts Volts Zero Gate Voltage Drain Current (VD = VDSS, VQ = 0V) S S ' dss , Current® Vgs(TH) Gate Threshold Voltage (VD = VQS, lD = 1mA) S 4 Ohms 1.40 Ohms MAX , APT801R4BN / APT751R4BN 34 Amps 1.3 Volts VGS=10V’ lD = lDtCont l ^DD Turn-on Delay Time ^DD = 0,5 ^DSS lD - l D[Cont.],VGS-1 5 V RG = 1.8fi Rise Time Turn-off Delay Time » . 0,5


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PDF APT801R2BN APT751R2BN APT801R4BN APT751R4BN 801R2BN 751R4BN 751R2BN 801R4BN APT801R2/751R2/801R4/751R4BN 801R4BN APT801R2BN
transistor U402

Abstract: U402 221A-06 304 fet transistor irf640 MTP20N20E 221D IRF640 applications note motorola irf640 DIODE MOTOROLA 824
Text: Transconductance (Vps ^ 3.2 V, lD - 10 A) 9FS 6 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VQS = o, f = 1 MHz) Cjss — 1600 pF Output Capacitance Coss — 750 Reverse Transfer Capacitance Crss — 300 SWITCHING CHARACTERISTICS* Turn-On Delay Time (Vdd^SOV, lD = 15 Apk, Rgen = 4-7 Ohms) ld (on) — 30 ns Rise Time tr — 60 Turn-Off Delay Time ld (off) — 80 Fall Time tf , ) (Measured from the drain lead 0.25" from package to center of die) Ld 3.5 (Typ) 4.5 (Typ) — nH Internal


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PDF IRF640 21A-06 TQ-220AB) O-220 transistor U402 U402 221A-06 304 fet transistor irf640 MTP20N20E 221D IRF640 applications note motorola irf640 DIODE MOTOROLA 824
Not Available

Abstract: No abstract text available
Text: 3EH Z5119-1 4- 1 7 7 5 1 1 9 - 0 750 50 3- 1 7 75 1 1 9 - 9 900 60 3-1775119-8 , 750 7.3 KG 6.3 KG ♦ rge©- 6.9 KG 5.9 KG C 6.6 KG 5JÖDS 7.5 KG 6.5 KG , 5.9 KG 600 40 2-1775119-4 7.5 KG 6.5 KG 750 50 2-1775119-2 6.9 KG 5.9 KG 750 50 2- 1 7 7 5 1 1 9 - 0 7.6 KG 6.6 KG 900 60 1- 1775119-8 900 60 , LD SHIPPING CARTON NET GROSS PCS/ PCS/ WEIGHT WEIGHT CARTON TRAY Tyco Tyco Electronics


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PDF 31MAR2000
Not Available

Abstract: No abstract text available
Text: ] TYp .096 [2.44] .225 TYP [5.72] LO .050 TYP [1 .27] 00 LD B HOUSING MATERIAL , [25,40] , 750 [19,05] 1,055 [26,80] 1,305 [33,15] 1,000 [25,40] 1,250 [31,75] 1,500 1, 750 2,000 2,250 2,500 2, 750 3,000 3,450 [39,50] [45,85] [52,20] [58,55] [64,90] [71,25] [77,60


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PDF T2006 L-55302, 31MAR2000 MIL-C-55302,
Motorola MRF183

Abstract: GS -L Capacitor
Text: , lD = 50 nAdc) Zéro Gâte Voltage Drain Current (V DS = 28 V, V GS = 0) G a te-S ource Leakage Current , Max Unit ON CHARACTERISTICS Gate Q uiescent Voltage (V DS = 28 Vdc, lD = 250 mAdc) D rain-S ource O n-V oltage (VGS = 10 V, lD = 3 A) Forward Transconductance (V DS= 10 Vdc, lD = 5 Adc) V GS(Q , 0.620 ' Tapered Line T -L in e , 0.650" x 0.620 " T -L in e , 0.020" x 0.620 " T -L in e , 0.270" x 0.320 , 7 Table 1. Typical Common Source S-Parameters (V qs = 13-5 V) lD = 1.5 A f MHz 20 30 40 50 60


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PDF RF183/D MRF183/D Motorola MRF183 GS -L Capacitor
925 960 tyco

Abstract: No abstract text available
Text: 11.50 11.00 10.50 10.00 9.50 9.00 8.50 8.00 7.50 7.00 6.50 6.00 5.50 5.00 4.50 4.00 3.50 3.00 2.50 2.00 , H O LD IN G S CHK S. HOU Electronics 1 1 -A U G -2 0 0 6 LTD. TAIWAN APVD W.J. KE 1 , NAME TYCO VII H O LD IN G S (B E R M U D A ) BR AN C H CHK S. HOU Electronics 11-A U G , 13.00 12.50 12.00 11.50 11.00 10.50 10.00 9.50 9.00 8.50 8.00 7.50 7.00 6.50 6.00 5.50 5.00 4.50 4.00 , N S TYCO VII H O LD IN G S H. HUANG 11 - AUG-2 0 0 6 0 PLC 1 PLC 2 PLC 3 PLC ANGLES


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PDF
Not Available

Abstract: No abstract text available
Text: THICK OVER M IL-G -45204, [.000030] INTERFACE QQ-B- 750 . ASTM-B-545, [.000150] 0 , DIAM ETER TO 12.29 [.484] C LT) 1.17 CM O LD xh [.1 3 0 ] PCB 12.83 ^


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PDF QQ-B-750. ASTM-B-545, QQ-Z-363. 12JAN05 31MAR2000
6V DC-AC Fluorescent lamp

Abstract: STP9N30
Text: Drain-source On Resistance Vgs = 10V Id = 4.5 A Vgs = 10V Id = 4.5 A Tc = 100°C 0.4 0.55 1.1 Q. n ld (on) On , Conditions Min. Typ. Max. Unit at. (*) Forward Transcondu dance VdS > ld (on) X rds(on)max Id = 4.5 A 3 6 S , Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time Vdd = 150 V lD =4.5 A Rg = 50 A Vgs = 10 V (see , Charge Gate-Drain Charge Vdd = 240 V lD = 9 A Vgs = 10 V 38 55 nC nC nC SWITCHING OFF Symbol Parameter , b27 STP9N30 Capacitance Variations C(pF) 1500 1250 1000 750 500 250


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PDF STP9N30 STP9N30 O-220 0G73m^ O-220 007342Q 6V DC-AC Fluorescent lamp
Not Available

Abstract: No abstract text available
Text: 35.00 32.50 30.00 27.50 25.00 22.50 20.00 17.50 15.00 12.50 10.00 7.50 5.00 2.50 DIM A 15 14 13 12 , . CHK HU 10JA N 2006 tlfCEJ Electronics NAME T yco H o ld in g s (B e rm u d a ) VII Ltd. T


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PDF 31MAR2000
depth-90

Abstract: BOS 401 card connector 2006 108-57127
Text: CL gw hi io olü CL OCL o et: UJÜJ o LOX -X o I_^ LOOÜJ O o ' o "ii . < o to —JLlJQ-<Û2 et Jj y 2 Q(/>0 —o: Z LU LI- 00 o zON of <00 ^EzZ LO b ^ xoce — hZ5Û 1,70 1.20 25.80 24.30 2.425 TYCO LOGO & DATE CODE 2.50 6 PLC D_□_□_LJ] ^ L Ks-izcq i O o LO \ r i L j m. CD # 28.00 2. O LD ♦ CSI o LO # O INSERTION CARD o m I 24.15 i i o 00.95 01.40 r I 21.00 m o • o -H < o CIRCUIT ! o , 32±0.1 4±0.1 10' oo + I 11.84 15.00 7.50 7.50 1 1.84 26.8±0.1 4.5±0.1 0.35±0.05 i o -H en to CN t I A


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PDF C-1734234 depth-90 BOS 401 card connector 2006 108-57127
2013 - Not Available

Abstract: No abstract text available
Text: 8.0 A, I B = 80 mA Base-Emitter Saturation Voltage I C = 8.0 A, I B = 80 mA h FE 500 750 100 , OPERATING AREA (See figures 1 and 2 and MIL-STD- 750 ,Test Method 3053) DC Tests T C = 25 °C +10 ºC, t = 1 , CB CD CH HR HT HR1 LD LL L1 MHD MHS PS PS1 S T1 T2 Case INCH MILLIMETERS MIN MAX MIN MAX 0.470 0.500 11.94 12.70 0.620 15.76 0.250 0.340 6.35 8.64 0.350 8.89 0.050 , (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD


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PDF 2N6298 2N6299 MIL-PRF-19500/540 O-213AA O-213AA 2N6299. MIL-PRF-19500/540. T4-LDS-0310,
Not Available

Abstract: No abstract text available
Text: CD < d O I CJ 1.25 2 POS. 2.20 0.26 TYP. 3 P0S, o cn tj LO _* LO O) ho oy t i Otto lü Qi AMP LOGO ry. Q_ O Pf ^ û: Ld Ld O M I V PS -Ori Ql- . LOO-l O Q NOTE: 1. MATERIAL: HOUSING: "?I ïf c S S -JL lIÜ- , is s t LJSL THERMOPLASTIC, UL 9 4 V-0, COLOR: NATURAL 2. APPLY TERMINAL PART NO: X-440147-X. DIMENSION : 0 PLC ± 1 PLC ±0.15 2 , 8.75 7.50 6.25 5.00 3.75 2.50 1.25 C 1-440146-5 1-440146-4 1-440146-3 1-440146-2 1-440146-1


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PDF X-440147-X. 29-JUL-2003 29-JUL-2003 31JUL 26JUL 04APR
Not Available

Abstract: No abstract text available
Text: – 3.81+0.08 [. 1 50+.003] 3.81+0.08[. 1 50+.003] B T IN -e PCB AIR /¿m PER QQ-B- 750 . M IL - P - 19468A. A S T M — B —5 4 5 , M IN 2 .5 4 /¿m o LD r- T H IC K .


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PDF 10JAN05 QQ-B-750. 9468A. QQ-Z-363.
2013 - Not Available

Abstract: No abstract text available
Text: -80 mA h FE 500 750 100 Max. Unit V 18000 V CE(sat) V V BE(sat , 2.0 µs t off 8.0 µs SAFE OPERATING AREA (See figures 1 and 2 and MIL-STD- 750 ,Test , of 6 2N6298 and 2N6299 PACKAGE DIMENSIONS DIM CB CD CH HR HT HR1 LD LL L1 MHD MHS PS PS1 S T1 T2 Case INCH MILLIMETERS MIN MAX MIN MAX 0.470 0.500 11.94 12.70 0.620 , ) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. Lead number 1 is the emitter


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PDF 2N6298 2N6299 MIL-PRF-19500/540 O-213AA O-213AA T4-LDS-0310,
TX433

Abstract: TX433 MODULE TX-433 13619 Temecula TD415
Text: Common Mode Attenuation Û1 Ld m Z) Ld a o Electrical Specification from 25'C —40*C~85 , €”8178 Date Code 2.03 [0.08Û 15.70 [ 0.620 ] 0.38[0.015] 48 23x1.02[0.40] =23.46[0.920] Suggested Solder Pad Layout 0.64[0.025]- 25 16.76 [0.660] 24 DD_ 0.40 [0.01 6]^~ 23x1.02[0.040] =23.46[0.920] " _L 7.50 [0.295


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PDF TAAA12J3A 10OKHz, PREP3619 ACAD\TTC\A1133192 TX433 TX433 MODULE TX-433 13619 Temecula TD415
Not Available

Abstract: No abstract text available
Text: CWR D c A A PHOSPHOR BRONZE PER Q Q -B- 750 . GOLD PLATED IN LOCALIZED GOLD PLATE AREA AS , C.STINSON ± PRODUCT SPEC CONTACT, S IZ E 20 DF, eg MATERIAL ± ± ± S O LD E R C U


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PDF -B-750. 76/xm
ds3847

Abstract: BUZ-10L BUZ10L 221A-04 AN569 MTP23N05L
Text: PF Output Capacitance Coss — 500 750 Reverse Transfer Capacitance Crss — 180 270 Total Gate Charge (VDS = 25 V, Vqs = 5.0 Vdc, lD = 23 A) Qg — 21 — nC SWITCHING CHARACTERISTICS* Turn-On Delay Time td(on) — 25 40 ns Rise Time (VDD = 30 V, lD = 3.0 A, VGS = 10 V, tr — 60 90 , 15.75 0.570 0.620 B 9.66 ■10.28 0.380 0.405 C 4.07 4.82 0.160 0.190 D 0.64 0.88 0.025 0.035 F 3.61 , e 0.2 Figure 3. On-Resistance Variation versus Junction Temperature -50 j ld = 11.5 a


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PDF BUZ10L MTP23N05L 21A-04 O-220AB 50tching BUZ10L C6554S ds3847 BUZ-10L 221A-04 AN569 MTP23N05L
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