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LT2079I Linear Technology IC QUAD OP-AMP, 700 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO14, 0.150 INCH, PLASTIC, SO-14, Operational Amplifier
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Catalog Datasheet MFG & Type PDF Document Tags
1996 - 4016 RAM

Abstract: ram 4016 3459 4016 trigger processor 4034 4016(RAM) Z893XX Z89391 Z89321 sinewave-generator
Text: : ;* ; Initialize Registers ;* ld p0:0, #%00 ;Pointer initialized to RAM bank0 location 0 ld @p0:0, #%00 ;Initialize bank 0 location 0 value ld p0:1, #%00 ;Pointer initialized to RAM bank0 location 0 ld @p0:1, #%00 ;Initialize bank 0 location 0 value ld a,#0 ld phase,a ;Initialize phase to 0 ld a,#39 ;1209 Hz = 1209 * 256 / 8000 ld a,#16 ;500 Hz = ld delta,a 500 * 256 / 8000


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PDF Z893XX Z893XX 16-BIT Z893XX? 0000h AP96DSP0500 4016 RAM ram 4016 3459 4016 trigger processor 4034 4016(RAM) Z89391 Z89321 sinewave-generator
CC 4093 N

Abstract: 4093 N sinewave-generator
Text: : ;* ; Initialize Registers ;* ld p0:0, #%00 ;Pointer initialized to RAM bank0 location 0 ld @p0:0, #%00 ;Initialize bank 0 location 0 value ld p0:1, #%00 ;Pointer initialized to RAM bank0 location 0 ld @p0:1, #%00 ;Initialize bank 0 location 0 value ld a,#0 ld phase,a ;Initialize phase to 0 ld a,#39 ;1209 Hz = 1209 * 256 / 8000 ld a,#16 ;500 Hz = ld delta,a 500 * 256 / 8000


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PDF 0000h AP96DSP0500 AN008802-0701 CC 4093 N 4093 N sinewave-generator
Not Available

Abstract: No abstract text available
Text: 0.315 ±0.020 (8.00 ±1.00) 0.866 ±0.040 (22.00 ±1.00) T d 0.276 ± 0.020 ( 7.00  , ±300 ppm/°C -55°Cto+155°C Conditions Specification S h o r t T im e O v e r lo a d S o ld , ) 70°C at RCWV for 1000hrs (1.5 hrs. o n , 0.5 hrs. o ff) R e s is ta n c e T o S o ld e r in g H e , ±1.50) 0.433 ±0.040 (11.00 ±1.00) 0.276 ± 0.040 ( 7.00 ±1.00) 0.472 ±0.040 (12.00 ±1.00) 0.315 , ±0.059 (25.00 ±1.50) SQM5 (5 W ) 0.512 ±0.040 (13.00 ±1.00) 0.354 ± 0.040 (9.00 ±1.00) SQM7


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PDF 1000hrs
Not Available

Abstract: No abstract text available
Text: Source Voltage V GS ±2 0 V Power Dissipation at Tamtp25°C ptot 700 mW Operating , 'D(on) lD =1m A,VGS=0V 3 V lD =1mA, V DS= V GS 20 nA V g s = ±2 0 V ,V d s =0V , Current MAX. a VGS=10V, lD =250mA mS V DS=25V, lD =250mA 500 Static Drain-Source On-State , 8 ns Turn-Off Delay Time (2X3) ld (off) 20 ns Fall Time (2)(3) tf 12 V d s=25 V, VGS=0V, f=1 MHz ns V d d =25V, lD =250mA (1) Measured under pulsed conditions. Width


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PDF ZVN2120A Tamtp25Â cH7Q57Ã 0Q1Q354 001G35S
3fs 4a

Abstract: No abstract text available
Text: =25°C b -45 mA Pulsed Drain Current 'dm -400 mA V qs ±20 V 700 mW -55 , Capacitance (2) lD =-1mA, VGS=0V -4.5 V nA -20 -2 HA mA Vds=-450 V, VGS=0 Vds=-360 V, VGS=0V, T=125°C(2) mA VDS= -25V,VGS=-10V 150 a VGS=-10V, lD =-50mA mS VDS=-25V, lD , (2X3) 'dfoffl 15 ns Fall Time (2X3) tf 20 lD =-1 mA, VDg= Vjjg ,V GS=±20V,VD£r0V ns Common Source Output Capacitance (2) V DS=-25 V, V GS=0V, f=1 MHz VDD=-25V, lD


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PDF cH7Q57Ã 001G35S 3fs 4a
Not Available

Abstract: No abstract text available
Text: Power Dissipation at Tamb=25°C ^tot 700 mW Operating and Storage Temperature Range , Voltage v GS(th) -1.5 Gate-Body Leakage MAX UNIT CONDITIONS. V -4.5 lD =-1mA,VGS , Drain Currentd) 'D(on) mA V ds=-25V,V gs=-10V 100 C l VGS=-10V, lD =-50mA mS VDS=-25V( lD =-50mA Static Drain-Source On-State Resistance (1) -120 RDS(on) Forward , ns Fall Time (2)(3) tf 20 Vds=-25 V, VGS=0V, f=1MHz ns VDD=-25V, lD =-50mA (1


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PDF onf100Ã Tamtp25Â 0Q1Q354 001G35S
Not Available

Abstract: No abstract text available
Text: VGS + 20 Power Dissipation at Tamb=25°C ^tot 700 mW Operating and Storage Tem , Gate-Source Threshold Voltage v GS(th) 1 UNIT CONDITIONS. V MAX. lD =1m A ,V GS=0V V lD =1mA, VDg= VGg !gss 20 nA VGS= ± 2 0 V ,V DS=0V bss 10 100 Zero Gate Voltage , , lD -25 0 m A mS 16 Vds=240 V, VGS=0 Vds=192 V, VGS=0V, T=125°C(2) mA 500 1 1 3 Gate-Body Leakage VDS=25V, lD =250mA Input Capacitance (2) ^¡ss 85 pF Com mon Source O


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PDF Tamp25Â cH7Q57Ã 0Q1Q354 001G35S
Not Available

Abstract: No abstract text available
Text: ^=25°C ^tot 700 mW -55 t o +150 °C Operating and Storage Temperature Range Tj:Tstg , . UNIT CONDITIONS. 1.5 V lD =1mA, VDS= V GS nA V q s =± 20V, V DS=0V 10 100 i t , DS= 2 5 V ,V GS=5V Q n VGS=5V,ln=250mA V GS=3V, to=125mA mS 500 V DS=25V, lD =250mA ld (on) 8 ns Rise Time (2){3) tr 8 ns Turn-Off Delay Time (2)(3) ld (off) 20 Vos=25 V, V GS=0V, f=1MHz ns V q D=25V, lD =250mA Fall Time (2)(3) 12 ns tf (1) Measured


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PDF ZVNL120A cH7Q57Ã 001G35S
Not Available

Abstract: No abstract text available
Text: Power Dissipation atTamb=25°C Pto, 700 mW -55 to +150 °C Operating and Storage , . b v DSS V GS(th> 1 Gate-Body Leakage CONDITIONS. lD =1m A,VGS=0V V l^ lm A , V DS= V , ) ^oss 10 pF 100 VDS= 2 5 V ,V GS=10V n V GS=10V, lD =100mA mS 50 V ds=350 V, V , V DS=25V, lD =100mA Reverse Transfer Capacitance (2) ^rss 4 pF Turn-On Delay Time (2)(3) ld (on) 7 ns Rise Time (2)(3) *r 7 ns Turn-Off Delay Time <2)(3) td(off> 16


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PDF onr50Â cH7Q57Ã 0Q1Q354 001G35S
Not Available

Abstract: No abstract text available
Text: – d Pulsed Drain Current ’d m 800 mA V qs ±20 V 700 mW -55 to +150 , CONDITIONS. V lD =1m A,VGS=0V 1.5 V lp=1mA, VDS= VGS 'gss 100 nA V gs = ± 2 0 V ,V , Static Drain-Source On-State Resistance (1) RDS(on) a Si V GS=5V, lD =100mA VGS=3V. lD , 7 ns Turn-Off Delay Time (2)(3) ld (off) 16 ns 10 ns Input Capacitance (2 , B C 3.61 4.01 0.142 0.158 I D 13.00 13.97 0.512 0.550 1 ^


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PDF onf400 cH7Q57Ã 001G35S
Not Available

Abstract: No abstract text available
Text: am[^250C b 320 Pulsed Drain Current 'dm 6 A VGS ±20 V 700 mW -55 , lD =1mA, VGS=0V 1.5 V lD =1mA, Vpg= Vq5 nA 100 ■ss d 10 500 On-State Drain , ) tf V ds = 25V ,V gs =5V Q n VGS=5V, lD =250mA VGS=10V, 1 0=500mA mS 4.5 3.0 VDS , ,V DS=0V 1 1 ■s s g Zero Gate Voltage Drain Current VDg=25V, lD =500mA Vds=25 V, VGS , 13.97 0.512 0.550 1 ^ E NOM 1.27 F I - * _ -1 = - 0.37


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PDF cH7Q57Ã 001G35S
Not Available

Abstract: No abstract text available
Text: ±20 V Power Dissipation at Tamtj=25°C ^tot 700 mW -55 to +150 °C , Threshold Voltage VGS(th) -1.5 MAX. UNIT CONDITIONS. V lD =-1mA, VGS=0V -3.5 V , ) RDS(on) Forward Transconductance (1X2) 9fs 150 V ds="18 V, VGS=-10V a VGS=-10V, lD , Leakage Vos=-18V, lD =-500mA Input Capacitance (2) *-"iss 100 pF Common Source Output , ) tdfoff) 12 ns OSS VDS=-18V, VGS=0V, f=1MHz Vdd =-18V, lD =-500mA Fall Time (2)(3) 15


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PDF ZVP2106A cH7Q57Ã 0Q1Q354 001G35S
Not Available

Abstract: No abstract text available
Text: Voltage V qs + 20 V Power Dissipation at Tarrib=25°C ^tot 700 mW Operating and , UNIT CONDITIONS. V M AX. lD =-1mA, V Gg=0V -3.5 V lp=-1mA, Vpg= V GS 'g s s , ,V GS=-10V 8 £i VGS=-10V, lD =-375mA mS VDS=-25V, lD =-375mA Gate-Body Leakage Zero , Capacitance (2) ^rss 10 pF Turn-On Delay Time (2)(3) ld (oni 7 ns Rise Time (2)(3 , 0.142 0.158 I D 13.00 13.97 0.512 0.550 1 ^ E F I - * _


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PDF ZVP2110A cH7Q57Ã 001G35S
lm 3357

Abstract: No abstract text available
Text: Dissipation at Tamb=25°C P.o, 700 mW -55 to +150 °C Operating and Storage Temperature , Capacitance (2) VDS= 2 5 V ,V G£=10V 100 a V Gg=10V,l[j=100mA mS 50 V Dff=25V, lD , *-"oss 10 PF Reverse Transfer Capacitance (2) ^rss 4 PF Turn-On Delay Time (2X3) ld , ns Fall Time (2X3) tf 10 V DS=25 V, VGS=0V, f=1MHz ns V d d =25V, lD =100mA (1 , B C 3.61 4.01 0.142 0.158 I D 13.00 13.97 0.512 0.550 1 ^


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PDF cH7Q57Ã 001G35S lm 3357
Not Available

Abstract: No abstract text available
Text: Tamtj=25°C ^tot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 , =10V 50 n VGS=10V, lD =100mA mS VDS=25V, lD =100mA ^D(on) Static Drain-Source On-State , ns l d(of0 16 Vds=25 V, VGS=0V, f=1 MHz ns Turn-Off Delay Time (2)(3) V dd =25V, lD , 0.085 0.095 B C 3.61 4.01 0.142 0.158 I D 13.00 13.97 0.512 0.550 , D T Max B B Min A I Max 13.00 13.97 0.512 0.550 E NOM 2.54


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PDF cH7Q57Ã 001G35S
Not Available

Abstract: No abstract text available
Text: =25°C Ptot 700 mW -55 to +150 °C Operating and Storage Temperature Range Tj;Tstg , gs =10V n VGS=10V, lD -250mA mS 500 VDS=25V, lD =250mA Input Capacitance (2) ^iss , ns Fall Time (2X3) V dd =25V, lD =250mA (1) Measured under pulsed conditions. Width=300|is , D 13.00 13.97 0.512 0.550 1 ^ E F I - * _ -1 = - NOM , 13.97 0.512 0.550 E NOM 2.54 F Leads to pass through a hole 0.7mm dia. 4-3 â


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PDF ZVN0124A cH7Q57Ã 001G35S
Not Available

Abstract: No abstract text available
Text: ±20 Power Dissipation at Tam^=25°C Ptot 700 Operating and Storage Temperature Range Tj^stg , CONDITIONS. V - 200 lD =-1mA, V q 3= 0V V lD =-1mA, VDS= V GS ■gss nA VGS , =-25V, lD =-150mA <1)(2> Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer , 0.095 B C 3.61 4.01 0.142 0.158 I D 13.00 13.97 0.512 0.550 1 , 4.01 0.142 0.158 D I Max 13.00 13.97 0.512 0.550 B T E F Leads


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PDF ZVP2120C ZVP2120A 001G35S
Not Available

Abstract: No abstract text available
Text: 700 mW -55 t o +150 “C Power Dissipation a tT amb=25°C ^tot Operating and Storage , Voltage v GS(th) -1.5 Gate-Body Leakage MAX. UNIT CONDITIONS. V -4.5 lD =-1mA,VGS=0V V lD =-1mAr VDS= VG3 'g s s 20 nA VG£=±20V,VD£r0V Zero Gate Voltage Drain , VDS=-25V, lD =-50mA Static Drain-Source On-State Resistance (1) -100 ^DS(on) Forward , B C 3.61 4.01 0.142 0.158 I D 13.00 13.97 0.512 0.550 1 ^


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PDF cH7Q57Ã 001G35S
Not Available

Abstract: No abstract text available
Text: Voltage V qs ±20 V Power Dissipation at Tanl|j=250C ^tot 700 mW -55 to +150 "C , Threshold Voltage V GS(th) 0.8 MAX. 100 UNIT CONDITIONS. 2.4 V lD =1mA, Vds= V qs , 2.5 1 1 Zero Gate Voltage Drain Current lD =1mA, VGS=0V ■ss g Gate-Body Leakage , 100125 150 175 200 225 . lD (on)“ Drain Current (Amps) Tj-Junction Temperature (°C , 0.095 B C 3.61 4.01 0.142 0.158 I D 13.00 13.97 0.512 0.550 1


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PDF 0Q1Q354 001G35S
2008 - DM 311 BG 30

Abstract: BK 1085 DM 311 BG BTS 640 N1 m7 hc 08 b1 M9588 KT 805 Rk M9 m7 hc 08 BP TV fx
Text: LAN / WAN OADM and IP Routers Test Equipment Block Diagram LD (7) VCC (14) FIN1 FIN2 F FIN ( (13) ÷ FIN3 VMON (5) Phase Detector & LD Loop Filter VCSO (8) FOUT1 , -1.830 45 VCC-1.3 VCC-0.950 VCC-1.7 700 0.5 0.5 50 55 5, 6 n n n n n n n -64/-27 , Enabled = Logic "0" or no connect 7 LD O LVCMOS Lock Detect Locked = Logic "1" Loss of , 0.32 AW 10.4582 DU 27.648 FB 53.33 JU 130 LD 375 RF 718.75 T5


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PDF FX-427 FX-427 D-74924 1-88-VECTRON-1 DM 311 BG 30 BK 1085 DM 311 BG BTS 640 N1 m7 hc 08 b1 M9588 KT 805 Rk M9 m7 hc 08 BP TV fx
Not Available

Abstract: No abstract text available
Text: Gate-Source Voltage VGS ±20 V Power Dissipation at Tamb=25°C ^tot 700 mW Operating , =-100hA , V GS=0V -3.5 V lD =-1mA, V DS=VGS 'g s s -20 nA VGS=-15V,VDS=0V Zero Gate , mS VDS=-10V, lD =-200mA Input Capacitance (2) ^iss 60 pF v g s =ov , v ds =-io v f=1MHz Turn-On Time (2)(3) ^(on) 20 ns VDCP-25V, lD =-500mA Turn-Off Time (2)(3) ‘ (off) 20 , 0.512 0.550 1 ^ E NOM 1.27 F I - * _ -1 = - 0.37


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PDF BS250P ZVP2106A 001G35S
Not Available

Abstract: No abstract text available
Text: Source Voltage VGS + 20 V ^tot 700 mW -55 to +150 °C Power Dissipation a tT , PARAMETER lD =1mA, VGS=0V V l^ lm A , V DSi= V GS ■gss 100 nA V gs = ± 2 0 V ,V ds , V Dsr2 5 V ,V GS=5V a a VGS=5V,|D=250mA V gs =3V, lD =125mA mS 10 10 Vds=200 V, VGS=0 Vds=160 V, VGS=0V, T=125°C(2) mA 500 1 1 1.5 Gate-Body Leakage VDS=25V, lD , Time <2)(3) tf 12 VDS=25 V, V gs=0V, f=1MHz ns V DD=25V, lD =250mA (1) Measured under


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PDF Tamtp25Â 001G35S
Not Available

Abstract: No abstract text available
Text: ^25°C Ptot 700 mW Operating and Storage Tem perature Range Tj:T stg -55 to +150 °C , CONDITIONS. V -100 PARAMETER lD = -1 m A ,V G£r0V -3.5 V lD =-1mA, V Dg= VGS ' gss , =-80 V, V GS=0V, T=125°C(2) mA V DS= -2 5 V ,V GS=-10V 8 a VGS=-10V, lD =-375mA mS V DS=-25V, lD =-375mA Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain C urrentd , d(off) 12 ns Fall Tim e (2X3) tf 15 VDS=-25V, VGS=0V, f=1MHz ns VDD=-25V, lD


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PDF 0Q1Q354 001G35S
Not Available

Abstract: No abstract text available
Text: =25°C ^tot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C , CONDITIONS. V MAX. lD =-1mA,VGS=0V Drain-Source Breakdown Voltage b v DSS -60 Gate-Source Threshold Voltage VGS(th) -1.5 -3.5 V lD =-1mA, VDS= VGS Gate-Body Leakage ' , =-10V, lD =-500mA mS VDS=-18V, lD =-500mA On-State Drain Currentd) ' talon) Static Drain-Source , ) Fall Time (2X3) VDS=-18V, VGS=0V, f=1MHz VDD=-18V, lD =-500mA (1) Measured under pulsed


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PDF cH7Q57Ã 001G35S
Not Available

Abstract: No abstract text available
Text: Pulsed Drain Current 'd m -1 A V GS ±20 V 700 mW -55 to +150 °C Gate , Threshold Voltage V GS(th) -1.5 Gate-Body Leakage MAX U N IT C O N D IT IO N S. V lD =-1m A,VGS=0V -3.5 V lD =-1mA, V DS= V GS 'g ss 20 nA V GS=± 20V, V DS=0V Zero , GS=0V, f=1 M H z ‘r 15 ns Turn-Off Delay Time (2)(3) ld (off) 12 ns Fall Time <2)(3) tf 15 ns V d d = - 25V, lD =-125m A (1) M easured under pulsed conditions


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PDF 0Q1Q354 001G35S
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