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Samtec Inc
SFSDT-31-30-G-06.00-DR-NDX Cable Assembly Discrete Wire 0.152m 62 POS Discrete Wire Housing to 62 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: SFSDT-31-30-G-06.00-DR-NDX) SFSDT-31-30-G-06.00-DR-NDX ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet SFSDT-31-30-G-06.00-DR-NDX Bulk 0 3 Weeks 250 - - - $33.43303 $29.70886 More Info
Onlinecomponents.com SFSDT-31-30-G-06.00-DR-NDX 0 - - $82.05 $27.94 $27.94 More Info
Sager SFSDT-31-30-G-06.00-DR-NDX 0 250 - - - $30.37 $30.37 More Info
SDT Technology (Shanghai ShiDi Technology)
SDT313-313-3 RF COAXIAL BOARD MOUNT CONNECTOR SDT313-313-3 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Richardson RFPD SDT313-313-3 48 1 - - - - - More Info

DT313 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
DT313 DT313 ECAD Model Others Shortform Semicon, Diode, and SCR Datasheets Scan PDF
DT31-3010 DT31-3010 ECAD Model Delta Electronics HDSL Transformer Original PDF

DT313 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
YTF450

Abstract: dp 52
Text: TOSHIBA OISCRETE/OPTOl TT DE | TDTVaSD □□IbûZO S 9097250 TOSHIBA D"T-3^-13 TOSHIBA FIELD EFFECT TRANSISTOR Y T F 4 5 0 SILICON N CHANNEL MOS TYPE ( 71 -MOS I) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER RECULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES: . Low Drain-Source ON Resistance : RDS(ON)=0.3i2 (Typ.) . High Forward Transfer Admittance : |Yfs|=11S (Typ.) . Low Leakage Current : lGss=±100nA(Max.) @


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PDF 100nA 250uA 250yA SYM30L 00A/us YTF450 dp 52
TOSHIBA 9097250

Abstract: No abstract text available
Text: 9097250 TOSHI B A DT-3^-13 , ¿T o sh ib a SEMICONDUCTOR TECHNICAL


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PDF Q01ti77H DT-31-13 045i2 100nA 250yA 150pC, TOSHIBA 9097250
YTF150

Abstract: No abstract text available
Text: TOSHIBA CORPORATION 99D 16773 DT-3^-13 , y T F 1 5 0 Powered by ICminer.com Electronic-Library Service


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PDF TDT72SD 0-045i2 100nA 250uA 250uA 150pC, YTF150
2SK794

Abstract: C1B capacita
Text: ) SEMICONDUCTOR ¿fashìha TECHNICAL DATA 99D 1677 t DT-3^-13 2 S K 7 9 4 rds(on) - id Be Sì U O O V e


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PDF DT-39 -100nA 300/iA VdS-900V) 2SK794 C1B capacita
cdi dc/dc

Abstract: 2SK355 Vtih-20V
Text: TOSHIBA OISCRETE/OPTO} DeT| BOTOSO DOlbbM? b 9097250 TOSHIBA CDI SCRETE/OPTO) 990 16647 DT-3^-13 ¿/OóJlìlll SEMICONDUCTOR TECHNICAL DATA HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES: . Low Drain-Source ON Resistance : RDS(ON)=0.12"(Typ.) . High Forward Transfer Admittance : I Yfsl=6S(Typ.) . Low Leakage Current : IGsS=±100nA


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PDF
2000 - DT31-3010

Abstract: SEC.500
Text: Telecommunication HDSL Transfor mer Transformers DT31-3010 DT31-3010 A 1.07 0.3 1 2 10 9 DT31-3010 3 4 8 7 6 DELTAXXXX 5 6 B PRI 7 135 8 N1 4 N3 2 N2 SEC 31 9 C XXXX: DATE CODE WHITE DOT ON PIN 1 F 5 E 6 6 D 10 DIMENSIONS IN mm A B C D E F 3.81 0.3 24.2 MAX. 26.7 MAX. 20.3 0.3 3.3 MIN. 12.7 MAX. ELECTRICAL CHARACTERISTICS TURNS RATIO (PRI : SEC) 2:1


Original
PDF DT31-3010 10KHz, 160mA 100KHz, 300KHz DT31-3010 SEC.500
MGF1425

Abstract: No abstract text available
Text: MITSUBISHI {DISCRETE SC> TÏ 0^1^54^,32^ 00100L0 B 1~ MITSUBISHI SEMICONDUCTOR 6 249 82 9 MITSUBISHI I (DISCRETE SC) : 91 D 10060 MGF1425 DT-31'35 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION The M G F1425 super-low-noise GaAs F E T w ith an Nchannel S chottky gate is designed fo r use in Ku-band am plifiers. FEATURES · · · Low noise figure N F = 1.4 (T Y P .) @ f = 12 G H z High associated gain Gs = 10.5 dB (T Y P .


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PDF 00100L0 MGF1425 DT-31 F1425 MGF1425
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