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DT-25-B01X-XX datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
DT-25-B01X-XX DT-25-B01X-XX ECAD Model Others Barrier Style/DT-25-B01X-XX Scan PDF

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DC500V

Abstract: PA6 PLASTIC BARRIER TERMINAL PA66 PA6.6
Text: Barrier Style IDT- 25-B01X-XX Specification I Accessory Explaination Approval Rated Voltage Rated Current Pitch 300V 10A 7.62 Materials Plastic Housing PA6.6 , UL94V-0,Black Terminal Brass , 0.8t, Tin plated Screw Steel, M3 , Nickel plated Specifications Workinq Temperature -40 ~ +105 Insulation withstand Voltage AC2000V at 1 minute Insulation Resistance 500 or more at DC500V Wire range 22 -14 AWG Max.Torque Value 8Kg/cm


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PDF IDT-25-B01X-XX UL94V-0 AC2000V DC500V DC500V PA6 PLASTIC BARRIER TERMINAL PA66 PA6.6
dt61n

Abstract: dt250n DT18N td18n
Text: Modules with soldered contai :ts TD 18 N 14/16 DT 18 N 16/14 1400 1600 40 0,35 610 25 /60 18/85 1,1 16 100 50 F = 1000 1,2 0,2 125 45 TD 25 N 14/16 DT 25 N 16/14 1400 1600 50 0,51 1300 32/69 25 , 3,5 150 150 F = 1000 0,37 0,08 140 49 ■TD 86 N 16/ 25 DT 86 N 25 /16 1600 2500 160 1,8 16200 102 , 16200 92/85 0,85 2,15 150 150 F = 1000 0,37 0,1 130 48 ATD 92 N 16/ 25 DT 92 N 25 /16 1600 2500 160 1,8 , 2 20000 115/78 106/85 0,9 2,6 150 150 F = 1000 0,33 0,08 140 49 TD 106 N 16/ 25 DT 106 N 25 /16 1600


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PDF 3MD35T7 dt61n dt250n DT18N td18n
1999 - Not Available

Abstract: No abstract text available
Text: IFSM TC = 95°C; TC = 25 °C; (at rated VR, Sqare Wave, 20 kHz) tp = 8.3 ms; sine Features High , M3.5 W g q TC = 25 °C Md °C °C °C 33 Ptot A A A -55.+175 175 , Symbol Conditions IR TVJ = 25 °C; VR = ½ VRRM TVJ = 125°C; VR = ½ VRRM 0.2 1 mA mA TVJ = 25 °C; VR = VRRM TVJ = 125°C; VR = VRRM 2 10 mA mA IF = 5 A; IF = 5 A; TVJ = 25 °C TVJ = 125°C 1.1 1.1 V V IF = 10 A; IF = 10 A; TVJ = 25 °C TVJ = 125°C 1.4 1.5 V


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PDF O-220 0-015A 0-018A
Not Available

Abstract: No abstract text available
Text: soldered contacts TD 18 N 14/16 DT 18 N 16/14 1400 1600 40 0,35 610 25 /60 18/85 TD 25 N 14/16 DT 25 N 16/14 1400 1600 50 0,51 1300 32/69 25 /85 1,05 TD 36 N 14/16 , 140 49 ■TD 86 N 16/ 25 DT 86 N 25 /16 1600 2500 160 1,8 16200 102/69 1,0 86/85 , 48 ▲ TD 92 N 16/ 25 DT 92 N 25 /16 1600 2500 160 1,8 16200 92/85 0,85 2,15 , 150 F = 1000 0,33 0,08 140 49 TD 106 N 16/ 25 DT 106 N 25 /16 1600 2500 180


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2013 - 2DLF

Abstract: fagor 295
Text: , automotive and telecommunication. Maximum Ratings and Electrical Characteristics at 25 ºC FES1DWSR TG , Temperature Range Tj = 25 ºC Tj = 100 ºC Tj = 25 ºC Tj = 100 ºC Tj = 175 ºC WF 200 140 200 1.0 A 50 A 0.90 , Rectifier Recovery Characteristics (Tj = 25 ºC) Symbol trr ta tb tb/ta Softness VR = 30V, dIF/dt = 50A/µs , , dIF/dt = 150A/µs, IF = 5A VR = 30V, dIF/dt = 150A/µs, IF = 15A 0.45 7 8.5 9.5 10 9 15 25 30 nC nC IF = 0.5 A, dIF/dt = 100 A/µs, IRR = 1000 mA Test Conditions Min. Max. 25 15 6 ns Typ. Unit


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PDF OD123W 2011/65/EU 2002/96/EC J-STD-020, OD123W. Jul-12 2DLF fagor 295
Not Available

Abstract: No abstract text available
Text: dt o f T dt "Suggested 25 % o f T dt 2 0% of T dt 2 0 % of T dt 2 0 % of T dt 16% o f T ot 16% o f T dt 25 % o f T dt 2 0 % o f T DT 25 % o f T dt 2 0 % o f T DT 2 0 % o f T dt 2 0% of T dt 2 0% of T


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PDF PDU-13F PDU-14F PDU-15F U-16F U-17F U-18F PDU-53 PDU-54 U-108H U-1016H
LA 369

Abstract: No abstract text available
Text: 0001.2011 800150209 800150409 800150609 25 25 0001.2012 0001.2005 800151009 800151509 rosa/rose braun/brun grün/vert 25 25 25 0001.2021 0001.2022 0001.2023 800250209 800250409 800250609 10 16 20 rot/rouge grau/gris blau/bleu 25 25 25 0001.2024 0001.2025 0001.2026 800251009 800251509 800252009 25 gelb/jaune 25 0001.2027 800252509 35 40 50 schwarz/noir schwarz/noir weiss/blanc 25 25 25 0001.2028 0001.2029 0001.2030


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FES1D

Abstract: No abstract text available
Text: . Maximum Ratings and Electrical Characteristics at 25 ºC FES1DWSR TG Marking Code WF VRRM , www.fagorelectronica.com Document Name: fes1dwsr-tg Tj = 25 ºC Tj = 100 ºC Tj = 25 ºC Tj = 100 ºC Tj = 175 ºC , Characteristics (Tj = 25 ºC) Test Conditions Symbol Min. trr ta Typ. IF = 0.5 A, dIF/dt = 100 A , = 5A 25 VR = 30V, dIF/dt = 150A/µs, IF = 15A Qrr ns 0.45 VR = 30V, dIF/dt = 50A/µs, IF = 1A Qrr Unit 25 tb tb/ta Max. 30 www.fagorelectronica.com Document Name


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PDF AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, OD123W OD123W. FES1D
Not Available

Abstract: No abstract text available
Text: % o f T dt 8% o f T ot 6% o f T dt 6% of T dt ·Suggested 25 % o f T dt 2 0% of T dt 2 0% of T dt 20% of T Q T 16% o f T dt 16% of T dt 25 % o f T dt 20% of T dt 25 % o f T dt 2 0% of T ot 2 0% O f T Qy 2


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PDF PDU-13F PDU-14F PDU-15F PDU-16F PDU-17F PDU-18F PDU-53 PDU-54 PDU-108H PDU-1016H
2000 - Semikron sk 20

Abstract: Semikron Semitop sk 70 dt 08 field controlled thyristor 3SK40 SK 70 DT 16
Text: °C; ind. load Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3.10 ms Tvj = 125 °C; 8,3.10 ms Tvj = 125 °C Tvj = 125 °C; f = 50.60 Hz Tvj = 125 °C Tvj = 25 °C; typ. / max Tvj = 25 °C; RG = 33 ; typ. / max. Tvj = 25 °C; IT = 75 A Tvj = 125 °C Tvj = 125 °C Tvj = 125 °C; VDD = VDRM; VRD = VRRM Tvj = 25 °C; dc Tvj = 25 °C; dc Tvj = 125 °C; dc Tvj = 125 °C; dc per thyristor SK 40 DT SK 70 DT Units 42 320 280 510 390 500 100 80 80 / 150 150 / 300 2,45 1,10 20 max. 8 2 100 0, 25 3 1,7 68


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PDF SK40DT Semikron sk 20 Semikron Semitop sk 70 dt 08 field controlled thyristor 3SK40 SK 70 DT 16
2013 - Not Available

Abstract: No abstract text available
Text: , automotive and telecommunication. Maximum Ratings and Electrical Characteristics at 25 ºC FES1DWSR TG , Temperature Range Tj = 25 ºC Tj = 100 ºC Tj = 25 ºC Tj = 100 ºC Tj = 175 ºC WF 200 140 200 1.0 A 50 A 0.90 , Rectifier Recovery Characteristics (Tj = 25 ºC) Symbol trr ta tb tb/ta Softness VR = 30V, dIF/dt = 50A/µs , , dIF/dt = 150A/µs, IF = 5A VR = 30V, dIF/dt = 150A/µs, IF = 15A 0.45 7 8.5 9.5 10 9 15 25 30 nC nC IF = 0.5 A, dIF/dt = 100 A/µs, IRR = 1000 mA Test Conditions Min. Max. 25 15 6 ns Typ. Unit


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PDF OD123W 2011/65/EU 2002/96/EC J-STD-020, OD123W. Jul-12
2013 - 2DLF

Abstract: No abstract text available
Text: telecommunication. Maximum Ratings and Electrical Characteristics at 25 ºC FES1DWSR TG Marking Code VRRM , Tj = 25 ºC Tj = 100 ºC Tj = 25 ºC Tj = 100 ºC Tj = 175 ºC WF 200 140 200 1.0 A 50 A 0.90 V 0.75 V , Characteristics (Tj = 25 ºC) Symbol trr ta tb tb/ta Softness VR = 30V, dIF/dt = 50A/µs, IF = 1A Qrr VR = 30V, dIF , VR = 30V, dIF/dt = 150A/µs, IF = 15A 0.45 7 8.5 9.5 10 9 15 25 30 nC nC IF = 0.5 A, dIF/dt = 100 A/µs, IRR = 1000 mA Test Conditions Min. Max. 25 15 6 ns Typ. Unit www.fagorelectronica.com Document Name


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PDF OD123W AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, OD123W. Jul-12 2DLF
p174fct162244

Abstract: QS74FCT843 IDT74FCT 6823A AT/N0944 AT/S3C84E9 P174fct162q2 P174FCT521T IDT74FCT191T copartner
Text: Cypress S i l i c o n I n t e r f a c e FAMILY Octal SV FCT and 5V FCT with 25 Ohm Series Resistor Logic Products* ( FCTxxxT S tandard Version, FCT2xxxT = W ith 25 Ohm Series Resistors) PI29FCT52AT/BT , /CT Footnotes: * This standard version (FCTxxxT nomenclature) is also available with 25 Ohm series , nomenclature) is also available with 25 Ohm series resistors (FCT2xxxT nomenclature). * TI's "A" speed is


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PDF PI49FCT804T/AT PI49FCT805T/AT/BT/CT PI49FCT2805T/AT/BT/CT PI49FCT806T/AT/BT/CT PI49FCT807T/AT/BT/CT PI49FCT2807T PI49FCT811T/AT/BT QS5805T QS52805T QS5806T p174fct162244 QS74FCT843 IDT74FCT 6823A AT/N0944 AT/S3C84E9 P174fct162q2 P174FCT521T IDT74FCT191T copartner
dt61n

Abstract: dt250n
Text: 20/14 TD 92 N 16/ 25 1600 2500 60/85 92/85 104/76 160 1,80 16,2 DT 92 N 25 /16 92/85 104/76 Baseplate = 25 mm TD 106 N 14/20 1400 2000 180 2,00 20 DT 106 N 20/14 TD 106 N 16/ 25 1600 2500 106/85 115/78 180 2,00 20 DT 106 N 25 /16 106/85 115/78 Baseplate = 30 mm TD 121 N 14/20 1400 2000 200 2,35 27,6 DT 121 N 20/14 TD 121 N 16/ 25 1600 2500 121/85 128/81 200 2,35 27,6 DT 121 N 25 /16 121/85 128/81 Baseplate = 50 mm


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td 32 n 1600 powerblock

Abstract: powerblock TD 170 N dt61n dt250n
Text: TD 92 N 16/ 25 1600 DT 92 N 25 /16 Baseplate = 25mm 2000 120 1,4 9,8 2000 160 1,8 16,2 2500 160 1,8 16,2 TD 106 N 14/20 DT 106 N 20/14 TD 106 N 16/ 25 DT 106 N 25 /16 1400 2000 180 2 20,0 1600 2500 180 2 20,0 1400 2000 200 , N 14/20 DT 121 N 20/14 TD 121 N 16/ 25 DT 121 N 25 /16 Baseplate = 50mm TD 150 N 24/32 DT 150 N 32/24 TD 170 N 14/20 DT 170 N 20/14 TD 170 N 16/ 25 1600 2500 350 DT 170 N 25 /16 TD 210N 14


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PDF 215N22/30 215N30/22 td 32 n 1600 powerblock powerblock TD 170 N dt61n dt250n
powerblock TD 95 N 08

Abstract: dt61n
Text: Baseplate = 20r im TD 61 N 14/20 DT 61 N 14/20 TD 92 N 14/20 DT 92 N 20/14 TD 92 N 16/ 25 DT 92 N 25 /16 Baseplate = 25rnm TD 106 N 14/20 DT 106 N 20/14 TD 106 N 16/ 25 DT 106 N 25 /16 BaseDlate = 1400 1400 1600 , 121 N 16/ 25 DT 121 N 25 /16 Baseplate = 50rnm TD 150 N 24/32 DT 150 N 32/24 TD 170 N 14/20 DT 170 N 20/14 TD 170 N 16/ 25 DT 170 N 25 /16 TD 21 ON 14/20 DT 210 N 20/14 TD 21 ON 16/ 25 DT 210 N 25 /16 TD 215N22/30 DT 215N30/22 TD 250 N 14/20 DT 250 N 20/14 TD 250 N 16/ 25 DT 250 N 25 /16 Most


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PDF 25rnm 50rnm 215N22/30 215N30/22 powerblock TD 95 N 08 dt61n
ic 9945 a 8 pin

Abstract: 9945 A transistor ic 9945 a 4 pin L9944 diode 9948 LT 9949 fairchild micrologic 3m 9962 9932 DTL fairchild 9946
Text: ,T = 25 °C) R o Vqot (6 k Pull-up) (6 k & 2 k Pull-u (2 k Pull-up) t, 'p d + lp d - 3.9kS2 400 n 3.9kfi c2 30 pF 50 pF 30 pF Min. 25 ns 10 ns 15 ns Max. 80 ns 30 ns 50 ns t, pd + , s P ro b e and J i g C a p a c ita n c e (Vcc = 5.0 V, Ta = 25 °C) R 9932 9932 C 500 pF 500 pF Min. 25 ns 15 ns Max. 80 ns 40 ns = 5.0 V, Ta = 25 °C) (^cc = R 510 a 150 ii V , (9932,9944) 1 ta 1 1 25 °C O / Vc c « 5.0V R 400 Q 1 1 R 100« I 500 CAPACITO R C -


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EUPEC DD 90 N 16 K

Abstract: EUPEC tt 162 n 16 sinus ISD 400 EUPEC TT25 eupec dd 90 n 12 L EUPEC TT 25 EUPEC tt 25 N 12 pulse generator module at 4 KHZ EUPEC DD 31 N 1200 k DT25F
Text: EUPEC blE » m 34D3Ecî7 DOQllMS 857 «UPEC tt 25 f, td 25 f, dt 25 f Elektrische , 25 A tc = 71°C 32 A Stoßstrom-Grenzwert surge current t„j = 25°C, tp = 10 ms Itsm 520 A , Respective Manufacturer EUPEC TT 25 F, TD 25 F, DT 25 F blE D 34038^7 Ü001143 7T3 MUPEC Bild/Fig. 1, 2 , TT 25 F12 Bild/Fig. 1 M 400 'tm 60 40 = ao-c , Manufacturer EUPEC TT 25 F, TD 25 F, DT 25 F blE D 34032e]? OOOllMM t2T IUPEC Bild/Fig. 4, 5, 6


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PDF 34D3Ecà EUPEC DD 90 N 16 K EUPEC tt 162 n 16 sinus ISD 400 EUPEC TT25 eupec dd 90 n 12 L EUPEC TT 25 EUPEC tt 25 N 12 pulse generator module at 4 KHZ EUPEC DD 31 N 1200 k DT25F
TT 46 N 12

Abstract: din 6900 TT60N TT 93 N 08 TT105N DIN 46 244 din 46247 4.8 DIN 46247 AD116s TT95N
Text: -1 pan-head screw flat plug AK K 3 , 4 _ A 9 I iS a A TT TT TT TT TT TT TT 18 25 31 36 46 56 66 N N N N N N N TT TT TT TT 18 25 32 42 AK o K o3 . 4 _ A , 18 N 25 N 31 N 36 N 46 N 56 N 66 N 93 N 105 N 18 N 25 N 31 N 36 N 46 N 56 N 66 N 93 N 105 N 18 N 25 N , TD TD TD TD TD 18 25 31 36 46 56 66 N N N N N N N TD TD TD TD 18 25 32 42 AK o K o3 . A 0 AK K 9 4 A 2 DT DT DT DT DT DT DT 18 25 31 36 46 56 66 N N N N N N


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PDF 28min------» TT 46 N 12 din 6900 TT60N TT 93 N 08 TT105N DIN 46 244 din 46247 4.8 DIN 46247 AD116s TT95N
2013 - Not Available

Abstract: No abstract text available
Text: telecommunication. Maximum Ratings and Electrical Characteristics at 25 ºC FES1DWSR TG Marking Code WF , www.fagorelectronica.com Document Name: fes1dwsr-tg Tj = 25 ºC Tj = 100 ºC Tj = 25 ºC Tj = 100 ºC Tj = 175 ºC , Characteristics (Tj = 25 ºC) Test Conditions Symbol Min. trr ta Typ. IF = 0.5 A, dIF/dt = 100 A , = 5A 25 VR = 30V, dIF/dt = 150A/µs, IF = 15A Qrr ns 0.45 VR = 30V, dIF/dt = 50A/µs, IF = 1A Qrr Unit 25 tb tb/ta Max. 30 www.fagorelectronica.com Document Name


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PDF OD123W AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, OD123W.
2014 - Not Available

Abstract: No abstract text available
Text: . Maximum Ratings and Electrical Characteristics at 25 ºC FES1DSR TG Marking Code VC VRRM , Symbol VF Parameter Test Conditions Max. 0.90 IF = 1.0 A 0.75 Tj = 25 °C VR = , 100 °C IR Tj = 25 °C Tj = 100 °C Max. Instantaneous Forward Voltage VR = VRRM Unit 100 V µA Recovery Characteristics (Tj = 25 ºC) Test Conditions Symbol Min. trr ta , 15 VR = 30V, dIF/dt = 150A/µs, IF = 5A 25 VR = 30V, dIF/dt = 150A/µs, IF = 15A Qrr


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PDF AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, DO-214AB
2014 - Not Available

Abstract: No abstract text available
Text: Electrical Characteristics at 25 ºC FES1DWSR TG Marking Code WF VRRM Maximum Recurrent Peak , Name: fes1dwsr-tg Tj = 25 ºC Tj = 100 ºC Tj = 25 ºC Tj = 100 ºC Tj = 175 ºC 50 A 5 , Mount Top Glass Passivated Ultrafast Very Soft Recovery Rectifier Recovery Characteristics (Tj = 25 ºC , 9 VR = 30V, dIF/dt = 150A/µs, IF = 2A 15 VR = 30V, dIF/dt = 150A/µs, IF = 5A 25 VR , Unit 25 tb tb/ta Max. 30 www.fagorelectronica.com Document Name: fes1dwsr-tg nC


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PDF OD123W AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, OD123W.
2014 - Not Available

Abstract: No abstract text available
Text: Electrical Characteristics at 25 ºC FES1DSR TG Marking Code VI VRRM Maximum Recurrent Peak , Conditions Max. 0.90 IF = 1.0 A 0.75 Tj = 25 °C VR = VRRM 5 VR = VRRM 10 Tj = 175 °C Max. DC Reverse Leakage Current IF = 1.0 A Tj = 100 °C IR Tj = 25 °C Tj = , Characteristics (Tj = 25 ºC) Test Conditions Symbol Min. trr ta Typ. IF = 0.5 A, dIF/dt = 100 A , = 5A 25 VR = 30V, dIF/dt = 150A/µs, IF = 15A Qrr ns 0.45 VR = 30V, dIF/dt = 50A


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PDF DO-214AC AEC-Q101 2011/65/EU 2002/96/EC J-STD-020,
2000 - 3SK40

Abstract: field controlled thyristor
Text: 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3.10 ms Tvj = 125 °C; 8,3.10 ms Tvj = 125 °C Tvj = 125 °C; f = 50.60 Hz Tvj = 125 °C Tvj = 25 °C; typ. / max Tvj = 25 °C; RG = 33 ; typ. / max. Tvj = 25 °C; IT = 75 A Tvj = 125 °C Tvj = 125 °C Tvj = 125 °C; VDD = VDRM; VRD = VRRM Tvj = 25 °C; dc Tvj = 25 °C; dc Tvj = 125 °C; dc Tvj = 125 °C; dc per thyristor SK 40 DT SK 70 DT Units 42 320 280 510 390 500 100 80 80 / 150 150 / 300 2,45 1,10 20 max. 8 2 100 0, 25 3 1,7 68 450 380 1 000 720 1 000


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PDF 12ward SK40DT ARKETIN\FRAMEDAT\datbl\B17-Semitop\sk40dt 3SK40 field controlled thyristor
DT-670-SD

Abstract: Silicon Diode DT-470 DT-670C-SD dt 670 c cu DT-670B-SD DT-670A-SD DT-670 Lake Shore Cryotronics Silicon Diode DT-670 DT-670E-BR
Text: tight tolerance band designed for applications greater than 25 K, and available in a bare die that has , from 25 to 500 K of any silicon diode to date DT-670 diode temperature sensors are available in , from 25 K to room temperature. Tolerance bands allow users to select the degree of accuracy and value , 305 K ­ 500 K +/- 0.5 K +/- 0.33% +/- 0.50% Temperature Range Band D E 25 K ­ 100 K +/- , accuracy and value for specific application needs. Band D: The best accuracy from 25 to 500 K DT


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PDF DT-670 DT-670E-BR DT-670A-SD DT-670B-SD DT-670C-SD DT-670D-SD DT-670-SD- DT-670-SD Silicon Diode DT-470 DT-670C-SD dt 670 c cu DT-670B-SD DT-670A-SD Lake Shore Cryotronics Silicon Diode DT-670 DT-670E-BR
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