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dsd44

Abstract: SMBJ11CA SMBJ170C SMBJ15 SMBJ14 SMBJ13 SMBJ12 SMBJ11 SMBJ10 SMBJ14CA
Text: . For the bidirection typ having Vrwm of 10 volts and less, the IR limit is doubled. 3/4 DSD43 , RO


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PDF SMB/DO-214AA 100us DSD44, JAN-06 dsd44 SMBJ11CA SMBJ170C SMBJ15 SMBJ14 SMBJ13 SMBJ12 SMBJ11 SMBJ10 SMBJ14CA
5810L

Abstract: No abstract text available
Text: number, e.g.,IU C N 5310A Fl. 3-150 ■DSD433Ô GDD7flfib 355 s 5 iH 1 0 - lo - iu r s u


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PDF 10-BIT UCN5810AF, UCN5810EPF, UCN5810LWF UCN5810LWF-1 UCN5810AF/EPF/LWF UCN5810A. UCN5810AF 5810L
Not Available

Abstract: No abstract text available
Text: design information only. ALLOWABLE AVALANCHE ENERGY Dwg. GK-009-1 6-16 ■I DSD433Ô DDOTEbl


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PDF STR-S6525 GK-009-1 DSD433Ã IRFBC40. GK-019 0Q072b2
Not Available

Abstract: No abstract text available
Text: positive than Vg. 3-27 DSD433Ö 00D77b3 S77 ALLOWABLE PEAK COLLECTOR CURRENT AT 50°C AS A


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PDF UDN2580A/LW 2580/85L 25S0/85A UDN2580A UDN2580LW DSD433Ã 00D77b3 0S0433S UDN2580A B-1458A
VEE25

Abstract: UCN5840A UCN5840LW UCN5841A UCN5842LW UCN5843A allegro 5841 UCN5841ALW
Text: MICROSYSTEHS INC blE D ■DSD433fl DDDLDS3 7hH ■ALGR 5841 thru 5843 BiMOS II 8-BIT SERIAL-INPUT, LATCHED


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PDF UCN5841A UCN5843A UCN5841A/LW) UCN5842A/LW) UCN5843A/LW) V-15V VEE25 UCN5840A UCN5840LW UCN5842LW UCN5843A allegro 5841 UCN5841ALW
Not Available

Abstract: No abstract text available
Text: Output Current table. 6-36 = 0 mA DSD433Û 00002*13 TS? Dwg. GP-053-7 LO AD R EG ULATIO N


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PDF A8187SLT 0S0433Ã GP-051-2 GP-058 WP-028-1 GP-054-1
ULN-2013A

Abstract: ULN20
Text: digits as show n. See matrix on next page. 3-1 ALLEGRO MICROSYSTEMS INC blE J > DSD433fl , Applicable Devices All V ce 2001 T im t 2024 , blE D DSD433Ô GGGSflST SHE ALGR


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PDF 433fl ULN20XXL ULN20XXA -9754C 0S0433fl ILN20X3A/L -9750B VUV20X4A/L ULN-2013A ULN20
Not Available

Abstract: No abstract text available
Text: ) level for over-current protection. DSD433S D00S133 52*} m « . • tm # s Ã


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PDF A3952S- 3952SB P-007
Not Available

Abstract: No abstract text available
Text: 5-94 DSD433Ô D00fl257 TSb L L . L L


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PDF 32-BIT UCQ5818AF UCQ5818EPF 5818E DSD433Ã D00fl257
Not Available

Abstract: No abstract text available
Text: result from its use. ■.'.'M öS IÄ ^ffl'röO .Y w DSD433Û D0G12ÔÔ 517 ■115


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PDF 10-BIT UCN5810AF UCN5810AF, UCN5810EPF, UCN5810LW UCN5810AF/EPF/LWF UCN5810A. DSD433Ã D0G12Ã
DSD433S

Abstract: Sprague Electric zener
Text: ALLEGRO MICROSYSTEMS INC TB D ZENER DIODES DSD433S OODa?^1) fl ■ALGR T-91-01 Process ZAA and ZAB Zener Diodes • Alloy Junction • Buried Zener Junction for High Reliability • Silicon Epitaxial Layer Construction for Low Series Resistance • Silicon Nitride Passivation Process ZAA Zener Voltage 2.7 V—5.1 V Process ZAB Zener Voltage 3.9 V—5.1 V NOTE: Sprague Electric recommends against wire-bonding in the coarse (center) region of the alloy junction. 3003 E—02 4-168


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PDF DSD433S T-91-01 4-168nce Sprague Electric zener
6-BT

Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC blE D m DSD433B GODblB'ì 27S ■ALCR 3113, 3120, 3130, a n d 3140 " T t S - o ' S HALL-KFFFCT SWITCHES These Hall-effect switches are highly temperature stable and stressresistant sensors best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. Vcc Each device includes a voltage regulator, quadratic Hall voltage generator, temperature stability circuit, signal amplifier, Schmitt


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PDF DSD433B bipo120 GH-013 GH-014 D5G433Ã MH-006A MH-002-1A MH-011-1A 6-BT
AK116

Abstract: DSD433
Text: ALLEGRO MICROSYSTEMS INC ^3 D DSD433Ö D0D37cifl b ■ALGR T-91-01 PROCESS YIA Process YIA Power Diode Process YIA is a silicon epitaxial N on P diode designed for high-power applications. It can operate with a forward current of up to 5A. ABSOLUTE MAXIMUM RATINGS Peak lF Surge (Pulse Width = 1s).5.OA Operating Junction Temperature, Tj.+150°C Storage Temperature Range, Ts.- 55°C to + 150°C CATHODE. 0.0380 SQ. YIA 0.047"x0.047" ELECTRICAL


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PDF DSD433Ã D0D37cifl T-91-01 -K116 AK116 DSD433
BTB 600

Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC il ï DSD433Ô DODSSIh S `ü ^ ` 8 5 1 4 0 1 9 S P R A GU E. S E M I C O N D S / ICS 9 3 D 0 3 5 9 6 3> T'«t7-9ô PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors `2N' and `TP' Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 3 g 0 3 If f Device Type 2N5087 TP5138 TP5139 2N5142 2N5221 2N5226 2N5227 2N5354 2N5355 2N5356 2N5365 2N5366 2N5367 TP5372 TP5373 TP5374 TP5375 TP5378 TP5379 TP5382 TP5383 2N5400 2N5401 TP5447 TP5448 TP5811 TP5813 TP5815 TP5817


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PDF DSD433Ô 2N5087 TP5138 TP5139 2N5142 2N5221 2N5226 2N5227 2N5354 2N5355 BTB 600
2N3055 power supply circuit

Abstract: 2N3055 power amplifier circuit 2n3055 voltage regulator L465 TL431 amplifier l165 highpower audio bridge amp ULN3751Z amplifier uln3751 AC servo position
Text: – DSD433fl OOOS^äM bâ^ ■AL6R 3751 power opfrafioxal amplifier TYPICAL APPLICATIONS WIEN BRIDGE VIDEO


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PDF PS-002 ULN3751Z 2N3055/2N3772 DSD433fl 2N3055 power supply circuit 2N3055 power amplifier circuit 2n3055 voltage regulator L465 TL431 amplifier l165 highpower audio bridge amp amplifier uln3751 AC servo position
Not Available

Abstract: No abstract text available
Text: – DSD433Ö OOOäDSb 2Sfl ■TYPICAL CHARACTERISTICS POINT IN GAUSS - OPERA TE POINT - T A


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PDF GH-021 GH-022 GH-024 GS0433a GH-023 MH-008-2A MH-002-2 MH-011-2A SD433Ã
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