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DSA250-20G datasheet (1)

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microswitches

Abstract: 120g
Text: AMP Pre Travel (P.T) Operating Position Over Travel Movement Differential 20g Part Number 0-1478603-1 70g 0-1478605-1 20g 0-1478609-1 200g 50g 300g SPNC , 0.8 m/m 0.4 m/m 0-1478616-1 0-1478617-1 SPDT 5 0-1478604-1 0-1478611-1 20g 200g 300g SPNO 1.6 m/m 0-1478667-1 120g 20g 1.6 m/m 14.8 ±0.4 0.8 m/m 0.4 m/m , Position 200g 50g 70g 0-1478608-1 20g 0-1478612-1 200g 50g 300g SPNC 20g


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SM-05-20FRZ

Abstract: SR1C-4 SR1C-24 SM-1XP2 SM-1XN12 SM-3-02 SM-1XN02 SM304 SM-1XM08 SM-1XM06
Text: . 2 0.8 10 400 20G SM-1XM06 *<> if y 600 0. 8 50a 35 50 j 1. 2 0.8 10 600 20G SM-1XM08 ■*<) if y 800 0. 5 50a 20 50 j 1. 2 0. 5 10 800 20G SM-IXMIO * ') if y 1000 0. 5 50a 20 50 j 1. 2 0. 5 10 1000 20G SM-1XN02 t <) 'y y 200 1 50a 45 50 j 1 1 10 200 20G SM-1XN04 t <1 -y y 400 1 50a 45 50j 1 1 10 400 20G SM-1XN06 t ') 'y y 600 1 50a 45 50 j 1 1 10 600 20G SM-1XN08 *<> 20G SM-1XN12 if y 1200 1 50a 45 50 j 1 1


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PDF SM-1XM04 SM-1XM06 SM-1XM08 SM-1XN02 SM-1XN04 SM-1XN06 SM-1XN08 lS1348fBS SR1C-24 1S1349Ã SM-05-20FRZ SR1C-4 SM-1XP2 SM-1XN12 SM-3-02 SM304 SM-1XM08 SM-1XM06
2004 - 606016

Abstract: 30g 122 120g microswitches 330g pt 100 M 222
Text: P.T Operating Force 120g 200g 330g 120g 200g 330g 120g 200g 330g Releasing Force 20g 50g 70g 20g 50g 70g 20g 50g 70g Pre Travel (P.T.) Operating Position Over Travel , ] 14.8 ±0.4 [.606±.016] 0.8 m/m [.031] 0.4 m/m [.016] 120g 20g 1.6 m/m [.063] 14.8 , ) .604 (15.3) n .250 AMP Switch Position SPDT 16 SPNC SPNO Releasing Force 20g 50g 70g 20g 50g 70g 20g 50g 70g Pre Travel (P.T.) Operating Position Over Travel


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SM-05-20FRZ

Abstract: SM-1XN16 SM-1XN08 SM-1XN06 SM-1XN04 SM-1XN02 SM-1XM08 SM-1XM06 SR1D SM-1XP2
Text: . 2 0.8 10 400 20G SM-1XM06 *<> if y 600 0. 8 50a 35 50 j 1. 2 0.8 10 600 20G SM-1XM08 ■*<) if y 800 0. 5 50a 20 50 j 1. 2 0. 5 10 800 20G SM-IXMIO * ') if y 1000 0. 5 50a 20 50 j 1. 2 0. 5 10 1000 20G SM-1XN02 t <) 'y y 200 1 50a 45 50 j 1 1 10 200 20G SM-1XN04 t <1 -y y 400 1 50a 45 50j 1 1 10 400 20G SM-1XN06 t ') 'y y 600 1 50a 45 50 j 1 1 10 600 20G SM-1XN08 *<> 20G SM-1XN12 if y 1200 1 50a 45 50 j 1 1


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PDF SM-1XM04 SM-1XM06 SM-1XM08 SM-1XN02 SM-1XN04 SM-1XN06 SM-1XN08 lS1348fBS SR1C-24 1S1349Ã SM-05-20FRZ SM-1XN16 SM-1XN08 SM-1XM08 SM-1XM06 SR1D SM-1XP2
SM-1XN06

Abstract: SM-1XN08 SM-1XN12 SM-1XN02 SM3-08FR SM-1XN04 SM-1XM08 SM-1XM06 SM-1XM04 SM-1XP2
Text: . 2 0.8 10 400 20G SM-1XM06 *<> if y 600 0. 8 50a 35 50 j 1. 2 0.8 10 600 20G SM-1XM08 ■*<) if y 800 0. 5 50a 20 50 j 1. 2 0. 5 10 800 20G SM-IXMIO * ') if y 1000 0. 5 50a 20 50 j 1. 2 0. 5 10 1000 20G SM-1XN02 t <) 'y y 200 1 50a 45 50 j 1 1 10 200 20G SM-1XN04 t <1 -y y 400 1 50a 45 50j 1 1 10 400 20G SM-1XN06 t ') 'y y 600 1 50a 45 50 j 1 1 10 600 20G SM-1XN08 *<> 20G SM-1XN12 if y 1200 1 50a 45 50 j 1 1


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PDF SM-1XM04 SM-1XM06 SM-1XM08 SM-1XN02 SM-1XN04 SM-1XN06 SM-1XN08 SR1EM-10 sr1em-12 25MIN SM-1XN08 SM-1XN12 SM3-08FR SM-1XM08 SM-1XM06 SM-1XP2
2004 - 10gbps serdes

Abstract: Q-64G C192X 320-Gbps IBM serdes 899-ball
Text: PRS 5G and PRS 20G Product Brief Switch Fabric Cost Effective Switch Fabric Solutions for Smaller-Capacity MultiService Provisioning Platforms, Scalable to High-end Systems The AMCC PRS 5G and PRS 20G , devices, enterprise networking equipment, and low-end SAN systems. The PRS 5G and PRS 20G provide a , path of the PRS 5G and PRS 20G to higher-capacity solutions, such as the PRS 80G, enables customers , future. The PRS 5G and PRS 20G chips are implemented with IBM 0.13 micron technology, use IBM 3.2


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2014 - Not Available

Abstract: No abstract text available
Text: Data sheet HP 10500/7500 20G Unified Wired-WLAN Module Key features • Enterprise-scale , demanding Enterprise environments Product overview The IEEE 802.11ac-ready HP 10500/7500 20G Unified , 20G of centralized throughput, and high reliability, as well as offering substantial data processing , supports IEEE 802.11a/b/g/n and IEEE 802.11ac APs access devices. The HP 10500/7500 20G Unified Wired-WLAN , | HP 10500/7500 20G Unified Wired-WLAN Module Features and benefits Management • Wi-Fi Clear


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PDF 11ac-ready 11a/b/n 4AA4-6468ENW,
SM-05-20FRZ

Abstract: SM-1XN06 SM-1XN12 SM-1XN08 SM-1XN04 SM-1XN02 SM-1XM08 SM-1XM06 SM-1XM04 1XN08
Text: . 2 0.8 10 400 20G SM-1XM06 *<> if y 600 0. 8 50a 35 50 j 1. 2 0.8 10 600 20G SM-1XM08 ■*<) if y 800 0. 5 50a 20 50 j 1. 2 0. 5 10 800 20G SM-IXMIO * ') if y 1000 0. 5 50a 20 50 j 1. 2 0. 5 10 1000 20G SM-1XN02 t <) 'y y 200 1 50a 45 50 j 1 1 10 200 20G SM-1XN04 t <1 -y y 400 1 50a 45 50j 1 1 10 400 20G SM-1XN06 t ') 'y y 600 1 50a 45 50 j 1 1 10 600 20G SM-1XN08 *<> 20G SM-1XN12 if y 1200 1 50a 45 50 j 1 1


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PDF SM-1XM04 SM-1XM06 SM-1XM08 SM-1XN02 SM-1XN04 SM-1XN06 SM-1XN08 lS1348fBS SR1C-24 1S1349Ã SM-05-20FRZ SM-1XN12 SM-1XN08 SM-1XM08 SM-1XM06 1XN08
1478600-2

Abstract: microswitches 1478603-6
Text: Force 20g 50g 70g 20g 50g 70g 20g 50g 70g 120g SPDT Operating Force 120g 200g 300g , ] 1.6 m/m [.063] 14.8 ±0.4 [.582±.016] 0.8 m/m [.031] 0.4 m/m [.016] 20g 1.6 m/m , Operating Force 120g 200g 300g 120g 200g 300g 120g 200g 300g Releasing Force 20g 50g 70g 20g 50g 70g 20g 50g 70g Pre Travel (P.T.) Operating Position Over Travel Movement , Releasing Force 20g 50g 70g 20g 50g 70g 20g 50g 70g Pre Travel (P.T.) Operating Position


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2001 - 0.18-um CMOS technology

Abstract: temperature controller circuit diagram PM5310 PM5372 PM8610 PM8611 PM8620 0.18 um CMOS technology
Text: Preliminary PM8620 NSE- 20G 20G Narrowband Switch Element OVERVIEW The PM8620 NSE- 20G is a , E1s/VT2s, 384 DS3s/E3s) switching. · · · · The NSE- 20G can be combined in applications with , , · PHYSICAL CHARACTERISTICS E1, VT1.5, VT2, DS3 and E3 tributaries. The NSE- 20G can be used , PMC-Sierra, Inc. 2001. Preliminary PM8620 NSE- 20G 20G Narrowband Switch Element TYPICAL APPLICATIONS , SBSLITE PM8611 SBSLITE PM8620 NSE- 20G PM8620 NSE- 20G PM8611 SBSLITE PM8610 SBS SBI


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PDF PM8620 NSE-20G NSE-20G STS-12 20Gb/s PM5372 PM5310 PM8610 0.18-um CMOS technology temperature controller circuit diagram PM8611 0.18 um CMOS technology
30g 122

Abstract: 120g pt 100 M 222
Text: 60g 120g 180g 60g 120g 180g 60g 120g 180g Releasing Force 10g 20g 30g 10g 20g 30g 10g 20g 30g 60g 35g Over Travel Movement Differential 4.0 m/m [.157] 20.7 ±1.6 , 20g 30g 10g 20g 30g 10g 20g 30g Pre Travel (P.T.) Operating Position Over Travel , 60g 120g 180g 60g 120g 180g 60g 120g 180g Releasing Force 10g 20g 30g 10g 20g 30g 10g 20g 30g 60g 35g SPDT SPNC SPNO SPDT SPNC SPNO 5 0.1 1.095 (27.8


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2001 - 0.18-um CMOS technology

Abstract: PM5310 PM5372 PM8610 PM8611 PM8620 temperature controller circuit diagram 0.18 um CMOS technology
Text: Advance PM8620 NSE- 20G 20G Narrowband Switch Element OVERVIEW The PM8620 NSE- 20G is a , E1s/VT2s, 384 DS3s/E3s) switching. · · · · The NSE- 20G can be combined in applications with , , · PHYSICAL CHARACTERISTICS E1, VT1.5, VT2, DS3 and E3 tributaries. The NSE- 20G can be used , PMC-Sierra, Inc. 2001. Advance PM8620 NSE- 20G 20G Narrowband Switch Element TYPICAL APPLICATIONS , SBSLITE PM8611 SBSLITE PM8620 NSE- 20G PM8620 NSE- 20G PM8611 SBSLITE PM8610 SBS SBI


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PDF PM8620 NSE-20G NSE-20G STS-12 20Gb/s PM5372 PM5310 PM8610 0.18-um CMOS technology PM8611 temperature controller circuit diagram 0.18 um CMOS technology
Not Available

Abstract: No abstract text available
Text: HL6319/ 20G AlGalnP Laser Diodes HITACHI Description The HL6319/ 20G are 0.63 ¡im band AlGalnP , HL6319/ 20G Absolute Maximum Ratings (Tc = 25°C) Item Symbol Value Unit Optical output , HL6319/ 20G Typical Characteristics Curves HITACHI 3 HL6319/ 20G Monitor Current vs. Case , ) HITACHI 10 HL6319/ 20G Astigmastism vs. Optical Output Power 10 Far Field Pattern 8 6 4 , ) HITACHI 5 HL6319/ 20G Polarization direction The polarization direction is TM mode. The


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PDF HL6319/20G HL6319/20G 635nm
SM-1-02

Abstract: SM-1XH02 SM-1-04FR SM-1-04 SM-1-02FRA SM-1-02FR SM-1A-02FRA SL012 1S2832 SM-1XH04
Text: 10 1500 1SR100-I500ÍB3 20C SM-1XF08 *<) -y y 800 1 50a 35 50] 1. 1 1 10 800 trr<0. in s 20G SM-1XF16 ■*<) 's y 1600 0. 5 50a 20 50 j 1. 5 0. 5 10 1600 trr 20G SM-1XF20 *<) 's y 2000 0. 5 50a 20 50 j 1. 5 0. 5 10 2000 trr 20G SM-1XH02 * 'J -y y 200 1 50a 35 50] 1. 1 1 10 200 trr<0. in s 20G SM-1XH04 it ') 's y 400 1 50a 35 50] 1. 1 1 10 400 trr<0.4n s 20G SM-1XH06 * <) 's y 600 1 50a 35 50j 1. 1 1 10 600 trr<0. s 20G SM-1XH08 *<) -y y


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PDF SIN03-30 SL012 SM-1-02 1S2832Ã SM-1-02FR SM-1-02FRA SM-1-04 SM-1-04FR 1SR100-I500Ã SM-1XF08 SM-1XH02 SM-1-04FR SM-1-04 SM-1-02FR SM-1A-02FRA 1S2832 SM-1XH04
20g101

Abstract: 20G102
Text: NC I/O 5 I/O 6 20G 10-3 l/ 0 7 - Note: 1. > - - IL l IO '» q ">booz , The CG7C323 is the PLDC 20G 10 packaged in the JE D EC -com patible 28-pin PLCC pinout. Pin function , PLDC20G10B/PLDC20G10 - Selection Guide Ice (m A ) Generic Part Number 20G1 OB-15 20G 10B -20 20G1 OB-25 20G 10-25 20G 10-30 20G 10-35 20G 10-40 55 80 (continued) 55 80 35 40 Co m/l rid 70 70 100 100 25 30 , U D IN G JIG A N D SCOPE 20G 10-14 IN C L U D IN G J IG A N D SCOPE (a) (b) E q u iv a


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PDF 24-Pin 20L10, 20g101 20G102
1999 - Not Available

Abstract: No abstract text available
Text: HL6319/ 20G AlGaInP Laser Diodes Description The HL6319/ 20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers , : 10 mW CW Low operating current: 95 mA Max Low operating voltage: 2.7 V Max 117 HL6319/ 20G , 10 mW, VR(PD) = 5 V 118 HL6319/ 20G Typical Characteristics Curves 119 HL6319/ 20G 120 HL6319/ 20G 121 HL6319/ 20G Polarization direction The polarization direction is TM


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PDF HL6319/20G HL6319/20G 635nm
2000 - HL6319G

Abstract: HL6320G infrared emitting CIRCUIT Hitachi DSA00230
Text: HL6319G/ 20G AlGaInP Laser Diodes ADE-208-479D (Z) 5th Edition Dec. 2000 Description The HL6319G/ 20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are , voltage: 2.7 V Max TM mode oscillation Package Type · HL6319G/ 20G : G2 Internal Circuit · HL6319G 1 Internal Circuit · HL6320G 1 3 PD LD 2 3 PD LD 2 HL6319G/ 20G Absolute , 10 mW, VR(PD) = 5 V 2 HL6319G/ 20G Typical Characteristic Curves Monitor Current vs. Optical


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PDF HL6319G/20G ADE-208-479D HL6319G/20G HL6319G/20G: HL6319G HL6320G HL6319G HL6320G infrared emitting CIRCUIT Hitachi DSA00230
2012 - Not Available

Abstract: No abstract text available
Text: HVGT AF02- 20G 20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES Outline Drawings : mm is , multilayed mesa type silicon chip by epoxy resin. AF02- 20G DO-415 Cathode Mark Lot No. o 4.2 , light Power supply Type Mark Laser Voltage doubler circuit Microwave emission power AF02- 20G AF02- 20G Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition AF02- 20G Units 20 kV 20 mA I FSM 1.5 A peak Junction Temperature


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PDF AF02-20G DO-415
Not Available

Abstract: No abstract text available
Text: nected from bo th tru e and com plem ent in puts. Cypress PLD C 20G 10 uses an advanced 0.8-m icron C M O , PLCC Top View nnnnnnn 4 NC C 3 2 1 28 2 7 26 25 P LD C20G 10 PLD C 20G 10B JE D E C P L C C l'l , 20G 10B -15 2 0 G 1 0 B -2 0 20G 10B -25 20G 10-25 2 0 G 1 0 -3 0 20G 10-35 20G 10-40 55 80 55 80 , architecture bit `CO'. A long w ith this increase in functional density, the Cypress PLD C 20G 10 provides low , preload feature. 20G10 Functional Description T h e PL D C 20G 10 is a generic 24-pin device th a t


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PDF PLDC20G10B/PLDC20G10 24-Pin 24-Lead 300-M 28-Lead 28-Square
2013 - Not Available

Abstract: No abstract text available
Text: Data Sheet HL6319G/ 20G AIGaInP Laser Diode 638nm/10mW Features: Outline ï , oscillation Applications   1 HL6319G/ 20G Rev.2 Mar. 08, 2013 Laser module  Internal Circuit Laser lever Optical equipment for measurement Data Sheet HL6319G/ 20G , Symbol As - 5 - m Po=10mW, NA=0.55 HL6319G/ 20G Rev.2 Mar. 08, 2013 Data Sheet HL6319G/ 20G Typical Characteristic Curves 3 HL6319G/ 20G Rev.2 Mar. 08, 2013 Data Sheet


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PDF HL6319G/20G 638nm/10mW 638nm HL6319G/20G
3SAE5041K1

Abstract: relay socket studs k552 tyco relay k 552 relay studs
Text: €¢ Power or low-level switching • 20G to 2000 Hz vibration capability Description CIIT's line of , 20g 3SAE 00 1.187 15g 3SAC a .359 MAX-1 Flange Mount, 2 in-line holes r Assumes relay securely , . Vibration Relay Type 13 0.875 0.125 15g 3SAE '13 1.187 0.125 10g 3SAC 14 0.875 0.375 20g 3SAE 14 1.187 , 0.375 20g 3SAE 02 1.187 0.455 15g 3SAC .359 MAX T + 1.330 MAX .040 MAX i. T Two-hole Side , .375 ±.015 Mounting Code A Dim. (Max) Vibration Relay Type 04 0.875 20g 3SAE 04 1.187 15g 3SAC


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PDF 50/xA 3SAE5041K1 relay socket studs k552 tyco relay k 552 relay studs
1SR100-1200

Abstract: SM-1XH02 SM-1-02FR SM-1-02 SL012 SIN03-30 1S2832 st 50a SM-1XF20 SM1-12
Text: 10 1500 1SR100-I500ÍB3 20C SM-1XF08 *<) -y y 800 1 50a 35 50] 1. 1 1 10 800 trr<0. in s 20G SM-1XF16 ■*<) 's y 1600 0. 5 50a 20 50 j 1. 5 0. 5 10 1600 trr 20G SM-1XF20 *<) 's y 2000 0. 5 50a 20 50 j 1. 5 0. 5 10 2000 trr 20G SM-1XH02 * 'J -y y 200 1 50a 35 50] 1. 1 1 10 200 trr<0. in s 20G SM-1XH04 it ') 's y 400 1 50a 35 50] 1. 1 1 10 400 trr<0.4n s 20G SM-1XH06 * <) 's y 600 1 50a 35 50j 1. 1 1 10 600 trr<0. s 20G SM-1XH08 *<) -y y


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PDF SIN03-30 SL012 SM-1-02 1S2832Ã SM-1-02FR SM-1-02FRA SM-1-04 SM-1-04FR 1SR100-I500Ã SM-1XF08 1SR100-1200 SM-1XH02 SM-1-02FR 1S2832 st 50a SM-1XF20 SM1-12
2010 - BF480

Abstract: R950 Avantek S 2n3570 2SC988
Text: :>:; 125 S 125 S 175 J 175 S 175S 175 S 175 S 175 S ~gg~ 800M 1.3G 2.0G 2.0G 2.0G 2.0G 2.0G 2.0G 2.0(i , 18 10 20 20 20 10 19 19 19 60m ~gg~ 200M 2.0G 30M 30M 30M 1.0G 500M 500M 500M ~g , 20 5~g~ 2.0G 3.0G 3.0G 3.0G 3.0G 3.5G 3.SG 3.SG 3.5G 3.5G 4.5G 5.0G 5.0G 5.0G 5.0G 5.0G 5.0G 5.0G , 20 2u 25 25 25 25 25 25 25 25 25 ~~ ~g~ 1.0G 2.0G 2.0G 800M 800M 500M 500M 500M ~gg~ 40m


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PDF 2N6619 2N6620 BFR15A MA42260-2B7 MM2261-2B7 2N6597 2N6598 BF480 R950 Avantek S 2n3570 2SC988
2008 - TRANSISTOR C-111 M 5G

Abstract: 30g 124 SDS21 TRANSISTOR C-111 C-111 FERRITE0603 ISL55016 ISL55016IRTZ-T7 TB347 TB379
Text: -14 10 0 0.5G 1.0G 1.5G 2.0G 2.5G -16 0 3.0G 0.5G 1.0G 1.5G 2.0G 2.5G 3.0G FREQUENCY (Hz) FREQUENCY (Hz) FIGURE 2. |Scs21| vs FREQUENCY FIGURE 1 , -16 -25 -18 -30 0 0.5G 1.0G 1.5G 2.0G 2.5G 3.0G FREQUENCY (Hz) -20 0 0.5G 1.0G 1.5G 2.0G FREQUENCY (Hz) 2.5G 3.0G FIGURE 4. |Sdd22| vs INPUT POWER , 0.5G 1.0G 1.5G 2.0G 2.5G 3.0G FREQUENCY (Hz) FIGURE 5. |Ssd12| AND |Ssc12| vs


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PDF ISL55016 FN6526 ISL55016 ISL55016IRTZ-T7* 26dBm AMSEY14 5m-1994. TRANSISTOR C-111 M 5G 30g 124 SDS21 TRANSISTOR C-111 C-111 FERRITE0603 ISL55016IRTZ-T7 TB347 TB379
Not Available

Abstract: No abstract text available
Text: =1765959 Additional products Item Designation Description 1900028 EMSTBA 2,5/ 20-G Header, Nominal , EMSTBVA 2,5/ 20-G Header, Nominal current: 12 A, Nom. voltage: 200 V, Pitch: 5 mm, Number of positions , , Color: green, Assembly: Soldering 1754795 MSTB 2,5/ 20-G Header, Nominal current: 12 A, Nom , positions: 20, Assembly: Soldering 1757640 MSTBA 2,5/ 20-G Header, Nominal current: 12 A, Nom , positions: 20, Assembly: Soldering 1753796 MSTBV 2,5/ 20-G Header, Nominal current: 12 A, Nom


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PDF 5/20-ST 10-position CC-2005) 5/20-G 5/20-ST
Supplyframe Tracking Pixel