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Top Results (2)

Part Manufacturer Description Datasheet Download Buy Part
PT6362N Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12
PT6362C Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12

DSA2-11A datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
DSA2-11A DSA2-11A ECAD Model ABB Group Power Semiconductor Data Book 1976 Scan PDF
DSA2-11A DSA2-11A ECAD Model Others Shortform Semicon, Diode, and SCR Datasheets Scan PDF

DSA2-11A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - Not Available

Abstract: No abstract text available
Text: =0V Drain-source on-state resistance V GS=10V, I D= 11A , Tj=25°C Gate input resistance W f = 1 MHz, open , . tbd 12 - S pF Characteristics Transconductance g fs V DS³2*ID*R DS(on)max , ID= 11A


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PDF SPW17N80C2 P-TO247
Not Available

Abstract: No abstract text available
Text: current - - 100 VGS=10V, ID= 1.1A , nA Ω Tj=25°C - 2.7 3 Tj=150°C - , Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID= 1.1A Input capacitance Ciss V


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PDF SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5
1999 - Not Available

Abstract: No abstract text available
Text: °C mJ ID =5.5A, VDD =50V Avalanche energy, repetitive tAR limited by TjmaxF) ID = 11A , VDD =50V IS = 11A , VDS <=VDD, di/dt=100A/µs, Tjmax =150°C Page 1 V 2002-06-07 SPW11N60C3 , =0V, ID =0.25mA Drain-source avalanche breakdown voltage VGS =0V, ID = 11A Gate threshold , Rise time tr ID= 11A , R G=6.8Ω - 5 - Turn-off delay time t d(off) - 44 , Qgd Gate charge total Qg VDD =480V, ID = 11A VDD =480V, ID = 11A , nC VGS =0 to 10V


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PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3
2007 - Not Available

Abstract: No abstract text available
Text: =380V, V GS=0/10V, - 10 - Rise time tr ID= 11A , - 5 - Turn-off delay time , Qgs Gate to drain charge Qgd Gate charge total Qg VDD =480V, ID = 11A VDD =480V, ID = 11A , nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =480V, ID = 11A 1Limited only , 125°C dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, I D= 11A par.: VDS=380V, VGS=0/+13V, I D= 11A 140 3000 V/ns A/µs dv/dt(off) 120 dv/dt di/dt


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PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3
1999 - 11N65C3

Abstract: No abstract text available
Text: =380V, V GS=0/10V, - 10 - Rise time tr ID= 11A , - 5 - Turn-off delay time , Qgs Gate to drain charge Qgd Gate charge total Qg VDD =480V, ID = 11A VDD =480V, ID = 11A , nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =480V, ID = 11A 1Limited only , 125°C dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, I D= 11A par.: VDS=380V, VGS=0/+13V, I D= 11A 140 3000 V/ns A/µs dv/dt(off) 120 dv/dt di/dt


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PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3 11N65C3
1999 - Not Available

Abstract: No abstract text available
Text: time tr ID= 11A , - 5 - Turn-off delay time td(off) RG=6.8Ω - 44 70 , total Qg VDD =480V, ID = 11A VDD =480V, ID = 11A , nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =480V, ID = 11A 1Limited only by maximum temperature 2Repetitve avalanche causes , (RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, I D= 11A par.: VDS=380V, VGS=0/+13V, I D= 11A 140 3000 V/ns A/µs dv/dt(off) 120 dv/dt di/dt 110 2000 100 90


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PDF SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 SPP11N65C3 Q67040-S4557 11N65C3
1999 - Not Available

Abstract: No abstract text available
Text: -55. +150 °C mJ ID = 5.5 A, V DD = 50 V IS= 11A , V DS=480V, T j=125°C Rev. 2.4 Page , (BR)DSS V GS=0V, I D=0.25mA Drain-Source avalanche V (BR)DS V GS=0V, I D= 11A - 700 - , - Rise time tr ID= 11A , RG=6.8Ω - 18 - Turn-off delay time td(off) - , Gate charge total Qg V DD=480V, I D= 11A V DD=480V, I D= 11A , nC V GS=0 to 10V Gate plateau voltage V(plateau) V DD=480V, I D= 11A V 1Repetitve avalanche causes additional power


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PDF SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD
2011 - RFDA0066SR

Abstract: No abstract text available
Text: No file text available


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PDF RFDA0066 RFDA0066Digital 12-BIT 28-Pin, 100MHz 39/22dBm DS140303 075mm RFDA0066SR
1999 - Not Available

Abstract: No abstract text available
Text: -55. +150 °C mJ ID = 5.5 A, V DD = 50 V IS= 11A , V DS=480V, T j=125°C Rev. 2.4 Page , (BR)DSS V GS=0V, I D=0.25mA Drain-Source avalanche V (BR)DS V GS=0V, I D= 11A - 700 - , - Rise time tr ID= 11A , RG=6.8Ω - 18 - Turn-off delay time td(off) - , Gate charge total Qg V DD=480V, I D= 11A V DD=480V, I D= 11A , nC V GS=0 to 10V Gate plateau voltage V(plateau) V DD=480V, I D= 11A V 1Repetitve avalanche causes additional power


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PDF SPP11N60CFD PG-TO220-3-1 PG-TO220-3-1 Q67040-S4618 11N60CFD
1999 - Not Available

Abstract: No abstract text available
Text: =150°C Gate-source leakage current - - 100 Ω VGS=10V, ID= 1.1A , Tj=25°C - 2.7 3 Tj , *RDS(on)max, ID= 1.1A Input capacitance Ciss V GS=0V, V DS=25V, - 240 - Output


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PDF SPP02N60S5 PG-TO220 P-TO220-3-1 Q67040-S4181 02N60S5
2011 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF RFDA0066 RFDA0066Digital 12-BIT 28-Pin, 100MHz 39/22dBm DS120111 075mm
1999 - Not Available

Abstract: No abstract text available
Text: =0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID= 11A typ. max. 600 - - - 700 - 3.5 4.5 , , - 130 - Rise time tr ID= 11A , R G=6.8Ω - 35 - Turn-off delay time t d , charge Qgd Gate charge total Qg VDD=350V, ID= 11A VDD=350V, ID= 11A , ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID= 11A V 1Repetitve avalanche causes


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PDF SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5
2011 - RFDA0066

Abstract: JMK105BJ105KVLF TSW-106-07-G-S RFDA0066SB 433 mhz rf module spi TAJB106K016R PSF-S01-006
Text: No file text available


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PDF RFDA0066Digital RFDA0066 12-BIT 28-Pin, 100MHz 39/22dBm RFDA0066 DS120111 JMK105BJ105KVLF TSW-106-07-G-S RFDA0066SB 433 mhz rf module spi TAJB106K016R PSF-S01-006
33R 8P4R

Abstract: C3198 CAP0402 AD148 29ee512 CAP0402 0.1UF 16V MTH315D158 l0805 XRS10L620 con3 b27
Text: No file text available


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PDF CAP0402 MTH315D158 M66EN 33R 8P4R C3198 CAP0402 AD148 29ee512 CAP0402 0.1UF 16V MTH315D158 l0805 XRS10L620 con3 b27
1999 - Not Available

Abstract: No abstract text available
Text: avalanche V(BR)DS V GS=0V, ID= 11A typ. max. 600 - - - 700 - 3.5 4.5 5.5 , , - 130 - Rise time tr ID= 11A , R G=6.8Ω - 35 - Turn-off delay time t d , charge Qgd Gate charge total Qg VDD=350V, ID= 11A VDD=350V, ID= 11A , ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID= 11A V 1Repetitve avalanche causes


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PDF SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5
DSA2-12A

Abstract: No abstract text available
Text: No file text available


OCR Scan
PDF DS2-08A DS2-12A DSA2-12A DSA2-16A DSA2-18A
2001 - ALD523D

Abstract: ALD523DPH 2-line 16-character LCD screen B15PH DVM523 16-CHARACT EEPROM memory controller ALD521D weigh scale calibration program Note-AN523DA
Text: No file text available


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PDF ALD523D ALD500 ALD523D 16-alphanumeric ALD523DPH 2-line 16-character LCD screen B15PH DVM523 16-CHARACT EEPROM memory controller ALD521D weigh scale calibration program Note-AN523DA
DSA2

Abstract: DSA2-12A
Text: No file text available


OCR Scan
PDF DS2-08A DS2-12A DSA2-12A DSA2-16A DSA2-18A 16QCC DSA2
2001 - Note-AN523DA

Abstract: No abstract text available
Text: No file text available


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PDF ALD523D ALD500 ALD523D 16-alphanumeIBRATION Note-AN523DA
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 891-9155C
1999 - Not Available

Abstract: No abstract text available
Text: =0/+13V,ID= 11A 8 20 Avalanche SOA E = f(RG), inductive load, Tj=125°C A ID par.: Tj â


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PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3-31 PG-TO262-3-1 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: SPP07N65C3
Not Available

Abstract: No abstract text available
Text: No file text available


OCR Scan
PDF 0086N L60950.
600v 20 amp mosfet

Abstract: Ultrafast MOSFET Driver 10 AMP 1200V RECTIFIER DIODE DSEI30-10A IXDI404PI-ND IXCP10M45S 14 Amp Low-Side Ultrafast MOSFET Driver 200 Amp bridge mosfet IXCP10M45S-ND DSEI12-12A
Text: No file text available


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PDF O-240AA O-220AC O-247AD O-227B DSEI20-12A-ND DSEI8-06A DSEI12-06A DSEI12-10A DSEI12-12A 600v 20 amp mosfet Ultrafast MOSFET Driver 10 AMP 1200V RECTIFIER DIODE DSEI30-10A IXDI404PI-ND IXCP10M45S 14 Amp Low-Side Ultrafast MOSFET Driver 200 Amp bridge mosfet IXCP10M45S-ND DSEI12-12A
VDD18

Abstract: VDD33 rcs 72 XRS10L AD20-AD21
Text: No file text available


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PDF VDD33 VDD18 M66EN XRS10L620 DD10/RA12 DD4/RA15 VDD18 VDD33 rcs 72 XRS10L AD20-AD21
ether H5

Abstract: GP1219A01A futaba vfd 9 Futaba VFD display 256X64 futaba vfd circuit diagram Futaba VFD futaba display 126 Futaba protocol futaba 4 digit
Text: No file text available


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PDF GP1219A01A GP1219A01A 256Kbit 256x64 ether H5 futaba vfd 9 Futaba VFD display futaba vfd circuit diagram Futaba VFD futaba display 126 Futaba protocol futaba 4 digit
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