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DS90UB960TRGCTQ1 DS90UB960TRGCTQ1 ECAD Model Texas Instruments Quad 2MP Camera Hub FPD-Link III Deserializer With Dual CSI-2 Output Ports 64-VQFN -40 to 105
DS90UB960TRGCRQ1 DS90UB960TRGCRQ1 ECAD Model Texas Instruments Quad 2MP Camera Hub FPD-Link III Deserializer With Dual CSI-2 Output Ports 64-VQFN -40 to 105
SM840002KA TR(2) SM840002KA TR(2) ECAD Model Microchip Technology Inc ClockWorks™ Dual 10 Gigabit/Gigabet Ethernet 62.5MHz, 125MHz or 156.25MHz, Ultra-Low Jitter LVCMOS Clock Synthesizer, K–16
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DS1077LZ-60+T&R Silicon Oscillator 8-Pin SOIC N T/R - Tape and Reel (Alt: DS1077LZ-60+T&R) DS1077LZ-60+T&R ECAD Model
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DS1077LZ-60TR datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
DS1077LZ-60+T&R DS1077LZ-60+T&R ECAD Model Maxim Integrated Products 3V EconOscillator/Divider Original PDF

DS1077LZ-60TR Datasheets Context Search

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2007 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF DS1077L 87kHz 666MHz 150mil 118mil DS1077Lx-40 000MHz DS1077Lx-50 DS1077LU-40+
HPI2734C60

Abstract: No abstract text available
Text: . PART NUMBER OED —HP 12 7340 60-TR CONFIDENTIAL ItfORMATlON TIE INFORMATION C0NTANED IN THIS DOCUMENT , +O.OD " -CECiMAL PRECISION REV. PART NUMBER OED —HP 12 7340 60-TR CONFIDENTIAL ItfORNATlON TLE


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PDF HPI2734C60â 60-TR HPI2734C60
Not Available

Abstract: No abstract text available
Text: 5 1 D1 DIODE SCHOTTKY 60V 2A PMDU ROHM RB060M- 60TR RB060M-60CT-ND 6 1 SW1


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PDF BD9G101G BD9G101G. V-29V 800mohm GRM31CR61A106KA01L 490-1820-2-ND GRM188R71H153KA01D 490-1514-1-ND 015UF
2008 - UMK325

Abstract: HP150 grm188r71c474ka88 UMK325BJ105MH NP04SZB GRM31MR71H105KA88 ZXMP6A13F UMK325BJ105 led driver 200mA RB160M
Text: ZXMP6A13F DN449 F04 D1-D3: ROHM RB160M- 60TR Figure 4. Triple Buck-Boost Mode Can Drive 200mA LEDs


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PDF LT3496 500mA/DIV LT3496 CDRH3D14/HP-150 UMK325BJ105MH TMK212BJ225MG ZXMP6A13F DN449 RB160M-60TR UMK325 HP150 grm188r71c474ka88 UMK325BJ105MH NP04SZB GRM31MR71H105KA88 ZXMP6A13F UMK325BJ105 led driver 200mA RB160M
2005 - Varitronix VI-502-DP-RC-S

Abstract: MAXQ2000 MAX3387E MAX1658 MAX1407 DS9094F DS2433 DS1077L omron pushbutton j7 MAX338
Text: No file text available


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PDF MAXQ2000 RS-232 MAXQ2000. 100nF MAX203ECWP MAXQ2000 Varitronix VI-502-DP-RC-S MAX3387E MAX1658 MAX1407 DS9094F DS2433 DS1077L omron pushbutton j7 MAX338
2005 - SIP 9 Resistor

Abstract: VI-502-DP ECJ2VC1H100D HC49US13.500MABJ DS1077L DS9094F MAX1658 DS89C4 MAXQ2000 MAXQ2000-KIT
Text: No file text available


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PDF MAXQ2000 RS-232 MAXQ2000. 100nF MAX203ECWP MAXQ2000 SIP 9 Resistor VI-502-DP ECJ2VC1H100D HC49US13.500MABJ DS1077L DS9094F MAX1658 DS89C4 MAXQ2000-KIT
2004 - VI-502-DP

Abstract: sw pushbutton footprint ECJ2VC1H100D MAX3387E MAX1658 MAX1407 DS9094F DS1077L MAX338 SIP 9 Resistor
Text: No file text available


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PDF MAXQ2000-KIT MAXQ2000 RS-232 MAXQ2000. SEG13 SEG14 SEG15 VI-502-DP sw pushbutton footprint ECJ2VC1H100D MAX3387E MAX1658 MAX1407 DS9094F DS1077L MAX338 SIP 9 Resistor
2004 - Samsung k9f1208u

Abstract: SAMSUNG NAND FLASH WSOP48 samsung nand NAND01G cache program K9F28 NAND FLASH BGA samsung 1Gb nand flash samsung FLASH BGA Samsung Electronics. NAND flash memory
Text: to Ready/Busy High (E intercepted read) max 60+tr 60+tr 50+tr ns Note: The shaded


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PDF AN1838 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits Samsung k9f1208u SAMSUNG NAND FLASH WSOP48 samsung nand NAND01G cache program K9F28 NAND FLASH BGA samsung 1Gb nand flash samsung FLASH BGA Samsung Electronics. NAND flash memory
2004 - SAMSUNG NAND FLASH

Abstract: NAND01G cache program Samsung 256 Gbit nand Samsung k9f1208u WSOP48 tbga 6x8 Package Samsung Nand NAND FLASH BGA K9F1208U0M STMicroelectronics NAND256W3A
Text: 60 ns tEHBH tCRY Chip Enable High to Ready/Busy High (E intercepted read) max 60+tr 50+tr 60+tr 50+tr ns tRP Read Enable Pulse Width tRLQV tREA Read Enable


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PDF AN1838 Byte/264 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits SAMSUNG NAND FLASH NAND01G cache program Samsung 256 Gbit nand Samsung k9f1208u WSOP48 tbga 6x8 Package Samsung Nand NAND FLASH BGA K9F1208U0M STMicroelectronics NAND256W3A
2012 - mcr03pzpz

Abstract: GRM31CB31H225 GRM31MB31H105 1094AS-10M VLF302512 VLF3025 RB160M RB060M-6 IC MARKING A60 VSON008X2030
Text: , LED current =25mA, coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 95 90 eff1 eff2 , =25mA, PWM frequency = 20 kHz, Ta=25deg coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 100.00 BD60A00NUX Vcoil vs efficiency VIN=5VTa=25 LED 8 (26V) coil 1094AS-10M(TOKO) SBD RB060M- 60TR (ROHM) LED


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PDF BD60A00NUX BD60A60NUX 600kHz mcr03pzpz GRM31CB31H225 GRM31MB31H105 1094AS-10M VLF302512 VLF3025 RB160M RB060M-6 IC MARKING A60 VSON008X2030
2006 - hynix hy27

Abstract: HY27US08561A S08561A
Text: Preliminary HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Change AC Parameter tCRY(1.8V) Before 50+tr(R/B#) 60+tr (R/B#) History , ) 80+tr(R/B#)(4) tREA 35 30 tCRY (3.3V) 50+tr(R/B#)(4) 60+tr (R/B#)(4) Aug. 08. 2005 Preliminary , 100 60+tr (R/B#) 100 (4) ns ns ns Device Resetting Time (Read / Program / Erase) Write


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PDF HY27US HY27SS 256Mbit 32Mx8bit 16Mx16bit) 256Mb hynix hy27 HY27US08561A S08561A
2012 - S11V

Abstract: GRM31MB31H105
Text: , LED current =25mA, coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 95 90 eff1 eff2 , =25mA, PWM frequency = 20 kHz, Ta=25deg coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 100.00 BD60A00NUX Vcoil vs efficiency VIN=5VTa=25 LED 8 (26V) coil 1094AS-10M(TOKO) SBD RB060M- 60TR (ROHM) LED


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PDF BD60A60NUX BD60A00NUX 600kHz S11V GRM31MB31H105
2013 - Not Available

Abstract: No abstract text available
Text: =5.0V, Coil Power=2.7V to 20V, LED 8serial, LED current =25mA, coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM , , Ta=25deg coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 100.00 BD60A00NUX Vcoil vs efficiency VIN=5V Ta=25℃ LED 8 灯(26V) coil 1094AS-10M(TOKO) SBD RB060M- 60TR (ROHM) LED current 25mA PWM


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PDF BD60A00NUX BD60A60NUX BD60A00NUX BD60A60NUX
2014 - Not Available

Abstract: No abstract text available
Text: driver ESOP8 ADT6750 ADTech D1 - Schottky Barrier Diode (2A, 60V) 3216 RB060M- 60TR


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PDF ADT6750 ADT6750 40VDC 12VAC 24VAC.
2006 - hy27us08561A

Abstract: hy27us08561 HY27 HY27US 48pin-USOP1 hynix hy27 HY27USXX561A 16Mx16Bit
Text: #) After 60+tr (R/B#) 0.1 2) Change 256Mb Package Type. - WSOP package is changed to USOP package , 80+tr(R/B#)(4) 60+tr (R/B#)(4) 0.3 1) Correct USOP figure. Nov. 07. 2005 Preliminary , High to Ready (in case of interception by CE at read) 45 60+tr (R/B#) ns (4) 100 5/10/500


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PDF HY27US HY27SS 256Mbit 32Mx8bit 16Mx16bit) 256Mb hy27us08561A hy27us08561 HY27 48pin-USOP1 hynix hy27 HY27USXX561A 16Mx16Bit
2012 - Not Available

Abstract: No abstract text available
Text: =5.0V, Coil Power=2.7V to 20V, LED 8serial, LED current =25mA, coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM , , Ta=25deg coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 100.00 BD60A00NUX Vcoil vs efficiency VIN=5V Ta=25℃ LED 8 灯(26V) coil 1094AS-10M(TOKO) SBD RB060M- 60TR (ROHM) LED current 25mA PWM


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PDF BD60A00NUX BD60A60NUX BD60A00NUX BD60A60NUX
2005 - HY27US08281A

Abstract: hynix nand 4G hy27us08281 HY27US16281A TSOP 44 nand Flash 8MX16BIT flash hynix nand HY27US hynix nand flash 128mb flash 8m*16bit
Text: After 0.3 tCRY(1.8V) 60+tr (R/B#) 60+tr (R/B#) 10 3) Add Read ID Table 4) Edit , # High to Ready (in case of interception by CE# at read) tCRY 60+tr (R/B#)(4) ns CE# High Hold


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PDF HY27US 128Mbit 16Mx8bit 8Mx16bit) HY27US08281A hynix nand 4G hy27us08281 HY27US16281A TSOP 44 nand Flash 8MX16BIT flash hynix nand hynix nand flash 128mb flash 8m*16bit
2012 - 107ma tdk

Abstract: GRM31CB31H225 mcr03pzpz RB060M-60 VLF302512
Text: 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 95 90 eff1 eff2 efficiency (%) 85 80 eff 1 = , =25deg coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 100.00 BD60A00NUX Vcoil vs efficiency VIN=5VTa=25 LED 8 (26V) coil 1094AS-10M(TOKO) SBD RB060M- 60TR (ROHM) LED current 25mA PWM frequency 20kHz 10.00


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PDF BD60A00NUX BD60A60NUX 600kHz 107ma tdk GRM31CB31H225 mcr03pzpz RB060M-60 VLF302512
2005 - HY27US08561A

Abstract: hy27us08561 hynix nand spare area HY27 HY27US hynix NAND 256Mbit HY27USXX561A hynix hy27
Text: +tr(R/B#) After 60+tr (R/B#) 0.1 2) Change 256Mb Package Type. - WSOP package is changed to , #)(4) After 0.3 tRP 15 80+tr(R/B#)(4) 60+tr (R/B#)(4) 1) Correct USOP figure , 60+tr (R/B#) ns (4) 100 5/10/500(2) 100 ns 5/10/500(2) 100 ns us ns Table


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PDF HY27US HY27SS 256Mbit 32Mx8bit 16Mx16bit) 256Mb HY27US08561A hy27us08561 hynix nand spare area HY27 hynix NAND 256Mbit HY27USXX561A hynix hy27
2011 - VIM-878-DP

Abstract: SML-LX0805SUGC-TR 14-segment display map Vp33 MAXQ2010 RST SM 0805 1K FT232 ftdi
Text: No file text available


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PDF MAXQ2010 MAXQ2010. MAXQ2010 VIM-878-DP SML-LX0805SUGC-TR 14-segment display map Vp33 RST SM 0805 1K FT232 ftdi
2009 - VIM-878-DP

Abstract: fb0805 PDV-P8013 ft232 h EVQ-Q5A05K maxim 16-bit mixed-signal microcontroller with lcd interface DB9 omron 14-segment display map YAGEO sm capacitor 22pF FT232RL
Text: No file text available


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PDF MAXQ2010 MAXQ2010. MAXQ2010 VIM-878-DP fb0805 PDV-P8013 ft232 h EVQ-Q5A05K maxim 16-bit mixed-signal microcontroller with lcd interface DB9 omron 14-segment display map YAGEO sm capacitor 22pF FT232RL
2009 - VIM-878-DP

Abstract: GRM2195C2A220JZ01D fb0805 NCP21WB473J03RA PDV-P8013 6P6C HC49US pec02saan FT232RL EVQ-Q5A05K
Text: No file text available


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PDF MAXQ2010 MAXQ2010. MAXQ2010 VIM-878-DP GRM2195C2A220JZ01D fb0805 NCP21WB473J03RA PDV-P8013 6P6C HC49US pec02saan FT232RL EVQ-Q5A05K
HY27US08121A

Abstract: HY27 HY27US hynix nand spare area
Text: tCRY(3.3V) tCRY(1.8V) tOH Before 50+tr(R/B#) 50+tr(R/B#) 15 After 60+tr (R/B , Ready (in case of interception by CE at read) 45 ns 100 (4) 100 ns (4) 60+tr (R/B


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PDF HY27US HY27SS 512Mbit 64Mx8bit 32Mx16bit) HY27US08121A HY27 hynix nand spare area
2005 - HY27US08121

Abstract: No abstract text available
Text: tCRY(3.3V) tCRY(1.8V) tOH Before 50+tr(R/B#) 50+tr(R/B#) 15 After 60+tr (R/B , ) tCRY 80+tr(R/B#)(4) 60+tr (R/B#)(4) ns CE# High Hold Time (at the last serial read)(3


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PDF HY27US HY27SS 512Mbit 64Mx8bit 32Mx16bit) HY27US08121
2004 - toshiba nand tc58

Abstract: TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND Toshiba NAND TOSHIBA part numbering samsung tc58 WSOP48 TOSHIBA Memory
Text: ns tEHBH tCRY Chip Enable High to Ready 60+tr 1000+tr ns ST Toshiba tBLBH1


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PDF AN1839 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits toshiba nand tc58 TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND Toshiba NAND TOSHIBA part numbering samsung tc58 WSOP48 TOSHIBA Memory
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