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Search Stock (156)

  You can filter table by choosing multiple options from dropdownShowing 66 results of 156
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
1907539 - ZFKDS 4-10 Phoenix Contact Shortec Electronics 16,057 - -
74HC244D/S410118 NXP Semiconductors Rochester Electronics 2,000 $0.24 $0.19
74LVC32AD/S410118 NXP Semiconductors Rochester Electronics 2,500 $0.13 $0.10
ADS4122EVM Texas Instruments Farnell element14 - £305.00 £305.00
ADS4122EVM Texas Instruments element14 Asia-Pacific - $491.29 $491.29
ADS4122IRGZT Texas Instruments Rochester Electronics 1,368 $13.61 $11.06
ADS4122IRGZT Texas Instruments Texas Instruments 931 $13.91 $8.57
ADS4125EVM Texas Instruments Newark element14 1 $127.69 $127.69
ADS4125EVM Texas Instruments Rochester Electronics 2 $317.50 $257.97
ADS4125IRGZT Texas Instruments Texas Instruments 588 $23.42 $15.80
ADS4126IRGZT Texas Instruments Avnet 173 €18.39 €18.09
ADS4128EVM Texas Instruments Texas Instruments 13 $299.00 $299.00
ADS4128IRGZT Texas Instruments Chip1Stop 207 $34.68 $28.61
ADS4142EVM Texas Instruments Newark element14 1 $127.69 $127.69
ADS4142EVM Texas Instruments Texas Instruments 23 $299.00 $299.00
ADS4149IRGZT Texas Instruments Chip1Stop 52 $72.20 $55.80
ADS4149IRGZT Texas Instruments Avnet 62 €53.49 €52.79
CBRLDS410A Essentra Components Allied Electronics & Automation - $0.16 $0.16
CBRLDS415A Essentra Components Allied Electronics & Automation - $0.16 $0.16
CDDS41N Apex Tool Group LLC Allied Electronics & Automation - $3.53 $3.53
CDS4100ACA Sensitec GmbH ComS.I.T. 9 - -
CDS4148-1 Microchip Technology Inc Avnet - $153.59 $105.59
DS-41100 Digitus TME Electronic Components 1 $30.58 $26.60
DS-41110 Digitus TME Electronic Components 1 $36.17 $31.38
DS-41120-1 Digitus TME Electronic Components 1 $27.13 $17.18
DS-41211 Digitus TME Electronic Components 1 $76.86 $67.29
DS4-10P Eaton Bussmann Sager - $8.15 $7.28
DS410-W Miyama Electric Co Ltd Chip1Stop 241 $3.90 $1.92
DS4100H+ Maxim Integrated Products Newark element14 2 $26.84 $18.21
DS4100H+ Maxim Integrated Products element14 Asia-Pacific 87 $41.09 $27.88
DS4100H+ Maxim Integrated Products Farnell element14 87 £20.30 £13.78
DS4104MP000 Thomas & Betts Sager - $2542.52 $2542.52
DS4107MP000 Thomas & Betts Sager - $2542.52 $2542.52
DS4125D+ Maxim Integrated Products Farnell element14 30 £18.08 £13.62
DS4125D+ Maxim Integrated Products Newark element14 30 $23.50 $19.48
DS4125P+ Maxim Integrated Products Avnet - $14.09 $12.69
DS415 Cooper Crouse-Hinds Master Electronics 2 $114.03 $102.33
DS41812 Chip One Exchange 1,440 - -
FDS4141 ON Semiconductor Farnell element14 115 £0.91 £0.44
FDS4141 ON Semiconductor RS Components 4,160 £0.81 £0.72
FDS4141 Fairchild Semiconductor Corporation New Advantage Corporation 2,500 $1.01 $1.01
FDS4141 ON Semiconductor RS Components 200 £0.88 £0.72
FDS4141 ON Semiconductor element14 Asia-Pacific - $0.98 $0.98
FDS4141 ON Semiconductor element14 Asia-Pacific - $1.95 $0.73
FDS4141_F085 Fairchild Semiconductor Corporation Chip One Exchange 12,500 - -
KDS-4.194304 KDS Daishinku Corp Bristol Electronics 400 - -
MD-S4130-70 (LF)(SN) JST Manufacturing Chip One Exchange 5,224 - -
MDF14A-5P-2.5DS(41) Hirose Electric Co Ltd Sager - $0.26 $0.23
MDF14A-5P-2.5DS(41) Hirose Electric Co Ltd Heilind Electronics - - -
MDF14A-5P-2.5DS(41) Hirose Electric Co Ltd Heilind Electronics - Asia - - -
PDS4102-B272/8600V Lattice Semiconductor Corporation Future Electronics - $843.90 $843.90
PDS4102-B272/8600V Lattice Semiconductor Corporation Symmetry Electronics - $768.89 $768.89
PDS4102-J84 Lattice Semiconductor Corporation Symmetry Electronics - $140.00 $140.00
PDS4102-J84 Lattice Semiconductor Corporation Future Electronics - $153.66 $150.32
PDS4102-T100/GX80 Lattice Semiconductor Corporation Future Electronics - $419.51 $419.51
PDS4102-T100/GX80 Lattice Semiconductor Corporation Symmetry Electronics - $382.22 $382.22
PDS4102-T44/2032VE Lattice Semiconductor Corporation Future Electronics - $153.66 $150.32
PDS4102-T44/2032VE Lattice Semiconductor Corporation Symmetry Electronics - $140.00 $140.00
PDS412GLD Pentair Equipment Protection - Hoffman Allied Electronics & Automation - $909.92 $864.43
PDS4150-13 Diodes Incorporated New Advantage Corporation 15,000 $2.80 $2.55
PDS4150-13 Diodes Incorporated Bristol Electronics 125 - -
PDS4150-13 Diodes Incorporated Bristol Electronics 5 - -
PDS4150-13 Diodes Incorporated Rutronik 30,000 $0.83 $0.73
PDS4150Q-13 Diodes Incorporated New Advantage Corporation 520,000 $1.49 $1.35
QDS41Q1 MISCELLANEOUS Bisco Industries 348 - -
VTDS41PC004G-100 Virtium  Chip1Stop 40 $58.67 $54.08

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DS-41 datasheet (42)

Part Manufacturer Description Type PDF
DS41 Others Vintage Transistor Datasheets Scan PDF
DS410 Mil Electronics 3 Watts of Isolated Output Power, Power Supply Scan PDF
DS410 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
DS410 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
DS410 Others Cross Reference Datasheet Scan PDF
DS4100H Maxim Integrated Products 100MHz HCSL Clock Generator Original PDF
DS4100H+ Maxim Integrated Products 100MHz HCSL Clock Oscillator Original PDF
DS4100HW+ Maxim Integrated Products Clock/Timing - Programmable Timers and Oscillators, Integrated Circuits (ICs), IC OSC CLOCK 100MHZ 10LCCC Original PDF
DS4106 Maxim Integrated Products 106.25MHz/212.5MHz/425MHz Clock Oscillators Original PDF
DS4106AN+ Maxim Integrated Products 106.25MHz/212.5MHz/425MHz Clock Oscillators Original PDF
DS4106AN+ Maxim Integrated Products 106.25MHz/212.5MHz/425MHz Clock Oscillators Original PDF
DS4106BN+ Maxim Integrated Products 106.25MHz/212.5MHz/425MHz Clock Oscillators Original PDF
DS4106BN+ Maxim Integrated Products 106.25MHz/212.5MHz/425MHz Clock Oscillators Original PDF
DS411 Mil Electronics 3 Watts of Isolated Output Power, Power Supply Scan PDF
DS412 Mil Electronics 3 Watts of Isolated Output Power, Power Supply Scan PDF
DS4125 Maxim Integrated Products DS4-XO Series Crystal Oscillators Original PDF
DS4125D+ Maxim Integrated Products DS4-XO Series Clock Oscillators Original PDF
DS4125P+ Maxim Integrated Products DS4-XO Series Clock Oscillators Original PDF
DS412SE40 Marconi 230A Iout, 4.0kV Vrrm General Purpose Silicon Rectifier Scan PDF
DS412SE41 Marconi 230A Iout, 4.1kV Vrrm General Purpose Silicon Rectifier Scan PDF

DS-41 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Ericsson HLR

Abstract: RBS ericsson Ericsson MGW ericsson bsc BSC ERICSSON Ericsson tma RBS -ericsson ericsson msc et bsc ericsson msc Ericsson 3G tma
Text: , 2000 3X AAA AC AMPS ANSI ATM BSC BSS CDMA CORBA DS-41 GCP GPRS GSM HA HDML HLR , air interface on an ANSI- 41 core network ( DS-41 ). Most cdmaOne operators plan to implement cdma2000 , are eyeing other technologies, such as 1X with enhanced data, DS-41 , or even local multipoint , paths of evolution and is fully prepared to support them. DS-41 Another migration path for cdmaOne operators is to evolve from cdma2000 1X to DS-41 , or to introduce DS-41 into new IMT-2000 spectrum. As


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PDF
VIC068A user guide

Abstract: VIC068A VIC64 Users vic64 VME64 VIC068 l2465 H-10-H Introduction to the VIC068A cyp vic068a
Text: *[0] and DS*[L] to DS*[H]P>3' 41 MBATO+8 MBAT0+T+36 C2 DSACKi*[0] and DS*[L] to LEDO[H] P. 3.41 MBATO+7 MBAT0+T+33 C3 DSACKi*[0] and DS*[L] to LA(7:0)I2' 3> 41 MBAT0+.5T+9 MBAT0+2T+30 C4 DS*(H) to DS*[L , ' 41 MBAT1+.5T+9 MBAT1+2T+31 C8 DSACKi*[0] and DS*[L] to DSi*[L] t6l MBAT1+3T+12 MBAT1+4T+32 C9 , DSACKi*[0] and DS*[L] to DS*[H] P'3> 41 MBATO+8 MBAT0+T+37 SSfilhbE 001E7öb 4b3 «CYP fjm cypress , *[0] and DS*[L] to LEDI[L] I3> 41 MBATO+13 MBATO+T+52 D7 DSACKi*[0] and DS*[L] to UWDENIN*[L] P. 41


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PDF VIC64 VIC64, 64-bit 16-bit VIC068A VIC64-based VIC068A. VIC64. VIC068A user guide VIC64 Users VME64 VIC068 l2465 H-10-H Introduction to the VIC068A cyp vic068a
2010 - VNL5160

Abstract: VND5E006A vn5e006 VN5E016MH vn5e010 SMD M05 sot Powersso-12 VN5E006ASP VN5E025MJ PowerSSO-24
Text: Operating voltage range VCC (V) VN5160S S0-8 1 4.5 to 36 41 160 5 DS l VN5050J PowerSSO-12 1 4.5 to 36 41 50 18 DS l VN5050AJ PowerSSO-12 1 4.5 to 36 41 50 18 CS VN5025AJ PowerSSO-12 1 4.5 to 36 41 25 40 CS VN5016AJ PowerSSO-12 1 4.5 to 36 41 16 60 CS VN5012AK PowerSSO-24 1 4.5 to 36 41 12 65 CS VN5010AK PowerSSO-24 1 4.5 to 36 41 10 65 CS


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PDF VNL5160N3-E OT-223 VNL5160S5-E VNL5050N3-E VNL5050S5-E BRVIPOWER0110 VNL5160 VND5E006A vn5e006 VN5E016MH vn5e010 SMD M05 sot Powersso-12 VN5E006ASP VN5E025MJ PowerSSO-24
2008 - f41 marking

Abstract: No abstract text available
Text: Value Symbol Conditions IS Unit 4.1 A T C=25 °C Diode pulse current 2) I S,pulse , =10 V, I D= 4.1 A, T j=25 °C - 0.62 0.8 Ω V GS=10 V, I D= 4.1 A, T j=150 °C - , , V GS=10 V, I D= 4.1 A, R G=50 Ω ns Gate Charge Characteristics V DD=400 V, I D= 4.1 A, V , =0 V, I F= 4.1 A, T J=25 °C t rr Reverse recovery charge Q rr Peak reverse recovery , (on)=f(T J); I D= 4.1 A; V GS=10 V I D=f(V GS); V DS=20V parameter: T J 20 2.5 25 °C 2


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PDF IPI90R800C3 PG-TO262 9R800C f41 marking
2008 - 9R800C

Abstract: IPA90R800C3 JESD22 D41 marking
Text: Value Symbol Conditions Symbol Conditions Unit 4.1 T C=25 °C A 15 4 V/ns , , V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D= 4.1 A, T j=25 °C - 0.62 0.8 V GS=10 V, I D= 4.1 A, T j=150 °C - 1.7 - f =1 , =0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 500 V V DD=400 V, V GS=10 V, I D= 4.1 A, R G=50 ns Gate Charge Characteristics V DD=400 V, I D= 4.1 A, V GS=0 to 10 V nC


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PDF IPA90R800C3 PG-TO220 9R800C 9R800C IPA90R800C3 JESD22 D41 marking
2008 - 9R800C

Abstract: IPW90R800C3 JESD22 DD-50 D41 marking
Text: Conditions Symbol Conditions Unit 4.1 T C=25 °C A 15 4 V/ns Values Unit min , - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D= 4.1 A, T j=25 °C - 0.62 0.8 V GS=10 V, I D= 4.1 A, T j=150 °C - 1.7 - f =1 MHz, open drain , =100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 500 V V DD=400 V, V GS=10 V, I D= 4.1 A, R G=50 ns Gate Charge Characteristics V DD=400 V, I D= 4.1 A, V GS=0 to 10 V nC Reverse Diode


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PDF IPW90R800C3 PG-TO247 9R800C 9R800C IPW90R800C3 JESD22 DD-50 D41 marking
2002 - DS10 diode

Abstract: diode DS10 FDS8333C
Text: Q1 4.1 A, 30V. RDS(ON) = 80 m @ V GS = 10 V RDS(ON) = 130 m @ V GS = 4.5 V · Q2 ­3.4 A , ±20 ID Drain Current 4.1 ­3.4 20 ­20 PD ­ Pulsed Power Dissipation for Dual , 250 µA,Ref. To 25°C Q1 ID = ­250 µA,Ref. to 25°C Q2 V GS = 10 V, ID = 4.1 A V GS = 4.5 V, ID = 3.2 A V GS = 10 V, ID = 4.1 A TJ =125°C ­1.8 ­4.2 3.7 67 81 103 105 167 147 ­3 Q1 , Drain­Source On­Resistance Q2 V DS = 5 V ID = 4.1 A 9 V DS = ­5 V ID = ­3.4A 282 Q1


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PDF FDS8333C DS10 diode diode DS10 FDS8333C
2008 - 9R800C

Abstract: No abstract text available
Text: specified Parameter Continuous diode forward current Value Symbol Conditions IS Unit 4.1 A , resistance R DS(on) V GS=10 V, I D= 4.1 A, T j=25 °C - 0.62 0.8 Ω V GS=10 V, I D= 4.1 , =0 V to 500 V V DD=400 V, V GS=10 V, I D= 4.1 A, R G=50 Ω ns Gate Charge Characteristics V DD=400 V, I D= 4.1 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time V GS=0 V, I F= 4.1 A, T J=25 °C t rr Reverse recovery charge Q rr


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PDF IPP90R800C3 PG-TO220 9R800C 9R800C
2008 - 9R800C

Abstract: IPI90R800C3 JESD22
Text: /dt 4) dv /dt Parameter Value Symbol Conditions Symbol Conditions Unit 4.1 T C , ) V GS=10 V, I D= 4.1 A, T j=25 °C - 0.62 0.8 V GS=10 V, I D= 4.1 A, T j=150 °C - , , V GS=10 V, I D= 4.1 A, R G=50 ns Gate Charge Characteristics V DD=400 V, I D= 4.1 A, V GS , F= 4.1 A, T J=25 °C t rr Reverse recovery charge Q rr Peak reverse recovery current V , ] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T J); I D= 4.1 A


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PDF IPI90R800C3 PG-TO262 9R800C 9R800C IPI90R800C3 JESD22
2008 - 9R800C

Abstract: No abstract text available
Text: Symbol Conditions Values Unit 4.1 A T C=25 °C min. typ. max. - - 3.8 , resistance R DS(on) V GS=10 V, I D= 4.1 A, T j=25 °C - 0.62 0.8 Ω V GS=10 V, I D= 4.1 , =0 V to 500 V V DD=400 V, V GS=10 V, I D= 4.1 A, R G=50 Ω ns Gate Charge Characteristics V DD=400 V, I D= 4.1 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time V GS=0 V, I F= 4.1 A, T J=25 °C t rr Reverse recovery charge Q rr


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PDF IPA90R800C3 PG-TO220 9R800C 9R800C
2008 - 9R800C

Abstract: IPP90R800C3 JESD22
Text: Conditions Symbol Conditions Unit 4.1 T C=25 °C A 15 4 V/ns Values Unit min , - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D= 4.1 A, T j=25 °C - 0.62 0.8 V GS=10 V, I D= 4.1 A, T j=150 °C - 1.7 - f =1 MHz, open drain , =100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 500 V V DD=400 V, V GS=10 V, I D= 4.1 A, R G=50 ns Gate Charge Characteristics V DD=400 V, I D= 4.1 A, V GS=0 to 10 V nC Reverse Diode


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PDF IPP90R800C3 PG-TO220 9R800C 9R800C IPP90R800C3 JESD22
1996 - VIC068A

Abstract: SAT83 e5ld 10t29 6T36 1T33 vic068a AC 5T-32 sbat vic068a-ac
Text: ½T+8 2½T+36 1½T+7 2½T+37 1½T+6 2½T+ 41 4, 8 1½T+7 2½T+36 1½T+6 2½T+37 1½T+5 2½T+ 41 4, 8 1½T+7 2½T+36 1½T+6 2½T+37 1½T+5 2½T+ 41 4, 8 1½T+7 2½T+36 1½T+6 2½T+37 1½T+5 2½T+ 41 4, 8 4½T+10 5½T+46 4½T+9 5½T+47 4½T+9 5½T+57 12 3 , +32 39 T+18 5 3 2 2 2 2 2 5 7 3 41 26 13 22 22 28 28 T+35 43 T+20 LOCAL BUS , ½T+29 2T+4 SAT+½T +53 3½T+33 41 38 8 4 43 42 8 4 47 55 4 5 38 4 42


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PDF VIC068A SAT83 e5ld 10t29 6T36 1T33 vic068a AC 5T-32 sbat vic068a-ac
Not Available

Abstract: No abstract text available
Text: 4.1 MB582A & MB583A , Limited Page 1 o f 48 November 1996 Version 4.1 FML/NPD/XCVRS/DS/1321 C 0 MB582A/583A 155 , 4.1 FML/NPD/XCVRS/DS/1321 MB582A/583A 155-Mbps ATM Transceiver D C 0 FUIITSIJ " , . 41 D.6 E When REFCLK = 51.84 MHz is used , .47 Copyright © 1996 Fujitsu M icroelectronics Lim ited Page 3 o f 48 November 1996 Version 4.1 FM L/NPD


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PDF MB582A MB583A 155-Mbps PD/XCVRS/DS/1321 MB582A MB583A DS/1321
1996 - D782

Abstract: MB86683
Text: Product Datasheet November 1996 Version 4.1 MB582A & MB583A 155-Mbps SDH/SONET ATM Transceiver , Microelectronics Limited Page 1 of 48 November 1996 Version 4.1 FML/NPD/XCVRS/DS/1321 MB582A/583A 155 , ) .36 Copyright © 1996 Fujitsu Microelectronics Limited Page 2 of 48 November 1996 Version 4.1 , loopback is used . 41 Optical , 4.1 FML/NPD/XCVRS/DS/1321 MB582A/583A 155-Mbps ATM Transceiver 1 1.1 1.1.1 Pin no. 24, 23 20


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PDF MB582A MB583A 155-Mbps FML/NPD/XCVRS/DS/1321 MB582A MB583A FML/NPD/XCVRS/DS/1321-4 D782 MB86683
2002 - DIODE A34

Abstract: No abstract text available
Text: performance. • Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V RDS(ON) = 130 mΩ @ V GS = 4.5 V , €“30 V V GSS Gate-Source Voltage ±16 ±20 ID Drain Current 4.1 –3.4 20 â , 10 V, ID = 4.1 A V GS = 4.5 V, ID = 3.2 A V GS = 10 V, ID = 4.1 A TJ =125°C –1.8 –4.2 3.7 , = 4.1 A 9 V DS = –5 V ID = –3.4A 282 Q1 V DS=10 V, V GS = 0 V, f=1.0MHz 49 , , I DS= 1 A V GS = 4.5 V, RGEN = 6 Ω 4.5 4.5 6 13 19 11 1.5 2 4.7 4.1 0.9 0.8 0.6


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PDF FDS8333C DIODE A34
2008 - 9R800C

Abstract: IPW90R800C3 JESD22
Text: 4.1 T C=25 °C A 15 4 V/ns Values Unit min. typ. max. - - 1.2 , (on) V GS=10 V, I D= 4.1 A, T j=25 °C - 0.62 0.8 V GS=10 V, I D= 4.1 A, T j=150 °C , =0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 500 V V DD=400 V, V GS=10 V, I D= 4.1 A, R G=50 ns Gate Charge Characteristics V DD=400 V, I D= 4.1 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time V GS=0 V, I F= 4.1 A, T J=25 °C


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PDF IPW90R800C3 PG-TO247 9R800C 009-134-A O-247 PG-TO247-3 9R800C IPW90R800C3 JESD22
1998 - C15 5T

Abstract: 2T D19 10t29 2t transistor c10 5t VIC068A 6T36 vme 1128
Text: B12 PAS*[0] & MWB*[0] to ABEN*[L] 4, 8 1½T+8 2½T+36 1½T+7 2½T+37 1½T+6 2½T+ 41 B13 PAS*[0] & MWB*[0] to A[7:1] 4, 8 1½T+7 2½T+36 1½T+6 2½T+37 1½T+5 2½T+ 41 B14 PAS*[0] & MWB*[0] to LWORD*[H/L] 4, 8 1½T+7 2½T+36 1½T+6 2½T+37 1½T+5 2½T+ 41 B15 PAS*[0] & MWB*[0] to WRITE*[H/L] 4, 8 1½T+7 2½T+36 1½T+6 2½T+37 1½T+5 2½T+ 41 , ] 4 6 30 5 31 5 41 B28 DS*[1] to ISOBE*[H] 4 4 23 3 24 3 26


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PDF VIC068A C15 5T 2T D19 10t29 2t transistor c10 5t 6T36 vme 1128
DIODE S4 41

Abstract: diode zd 22
Text: Code BUZ 101SL-4 55 V 4.1 A 0.075 £1 P-DSO-28 C67078-S. . Maximum Ratings Parameter Symbol Values Unit Continuous drain current one channel active Ta = 25 °C b 4.1 A Pulsed drain current one channel active Ta = 25 °C ^Dpuls 16.4 Avalanche energy, single pulse /D = 4.1 A, VQD = 25 V, Rgs = 25Q L= 10.7 mH, 7] = 25 °C eas 90 mJ Reverse diode dv/dt ls = 4.1 A, VDS = 40 V, d/F/df = 200 A/|js , on-resistance Vgs = 5V, Id = 4.1 A fîDS(on) _ 0.06 0.075 Q, SIEMENS Preliminary data BUZ 101SL-4 Electrical


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PDF 101SL-4 VPS05123 101SL-4 P-DSO-28 C67078-S. DIODE S4 41 diode zd 22
NE900175

Abstract: No abstract text available
Text: - 41 -43 -47 -53 NE900100 TYPICAL SMALL SIGNAL SCATTERING PARAMETERS S-MAGN AND ANGLES: VDS = 8 V , 62 58 55 51 48 44 41 36 S22 ANG 63 55 51 48 47 48 49 52 55 60 65 70 74 78 80 82 82 MAG 4.54 , .07 .07 .07 .07 .07 .07 .07 .08 .08 .09 .10 .12 .13 MAG .47 .46 .44 .43 . 41 .40 .39 .39 .40 . 41 .43 .46 .47 .49 .49 .46 . 41 ANG -26 -33 -38 -43 -47 -53 -58 -64 -70 -76 -81 -86 -90 -94 -98 -102


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PDF NE9000 NE9001 NE9002 NE9000, E900100, E900200, E900000, E900200 NE900175
WELLER LR 20 TIP

Abstract: WELLER EC 2001 weller WECP-80 weller soldering ecp weller wecp 20 weller soldering tip TCP weller wecp 50 DS801 WELLER "5 10 201 99" WELLER 5 24 110 99
Text: /16 5 Flux-set 5 Insertion tool DIP-IC 14/16 5 Extraction tool PUL-IC 14/205 41 13 47 47 , 41 000 74 5 41 002 71 5 41 003 72 - 1,2 mm 2,0 mm 3,2 mm 5 41 006 99 5 41 007 99 5 41 008 99 5 41 007 73 - Round tip, blust 2,4 mm 3,2 mm 5,0 mm 5 41 009 99 5 41 010 99 5 41 011 99 - ET-F ET-BB ET-CC Round tip, sloped 1,2 mm 2,4 mm 3,2 mm 5 41 012 99 5 41 055 99 5 41 013 99 - ET-O ET-S Longform, conical 0,8 mm 0,4 mm 5 41 014 99 5 41


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PDF
1997 - 5T50

Abstract: VIC068A 25B22
Text: B12 PAS*[0] & MWB*[0] to ABEN*[L] 4, 8 1½T+8 2½T+36 1½T+7 2½T+37 1½T+6 2½T+ 41 B13 PAS*[0] & MWB*[0] to A[7:1] 4, 8 1½T+7 2½T+36 1½T+6 2½T+37 1½T+5 2½T+ 41 B14 PAS*[0] & MWB*[0] to LWORD*[H/L] 4, 8 1½T+7 2½T+36 1½T+6 2½T+37 1½T+5 2½T+ 41 B15 PAS*[0] & MWB*[0] to WRITE*[H/L] 4, 8 1½T+7 2½T+36 1½T+6 2½T+37 1½T+5 2½T+ 41 , *[H] 4 6 30 5 31 5 41 B28 DS*[1] to ISOBE*[H] 4 4 23 3 24 3


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PDF VIC068A 5T50 25B22
GT123

Abstract: AP105-GT17-2022S GT17V-6DS-HU GT17VA-6DS-HU 24-28S GT17-8DS-R
Text: PIN NO.1 4.1 PIN NO.4 PIN NO.4 PIN NO.6 8.7 7.8 19.4 2- R3 15.9 , GT17VA- 6DP -DS 767- 0025 -7 PBT 5 PIN NO.4 6.6±0.05 4.1 ±0.05 , .3 8.7 4.1 GT17V- 6DS -HU GT 12 1.2 GT 2 3 PIN NO.6 6.1 15.7 - GT , 12 - GT 19N 1.2 13.1 0.9 1.2 3 4.1 PIN NO , 13.1 0.9 PIN NO.1 PIN NO.4 PIN NO.1 PIN NO.4 4.1 20.8 8.5


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PDF GT17-2022SCF GT17-2428SCF GT17-30SCF GT17V- 200spm 000/H 240spm AC100V CM-105 GT123 AP105-GT17-2022S GT17V-6DS-HU GT17VA-6DS-HU 24-28S GT17-8DS-R
PC06E

Abstract: PC00C-XX-XXX PCSE style MS3471 PT00CE-20-41PW MS3476 tool PC02C-XX-XXX MS3476 back shell PT/MS Amphenol MS3474
Text: procedure, part number PT00CE-20-41PW (SR) is shown as follows: PT 00 1 2 CE ­ 20 ­ 41 3 4 , Arrangement "20 ­ 41 " designates insert arrangement. Refer to pages 56-61 for insert availability. 6 , 41 Amphenol ® PC, PC-SE*, PC-CE* solder and crimp type Amphenol® PC Series threaded coupling , ordering procedure, part number PC00A-20-41PW (SR) is shown as follows: PC 00 A ­ 20 ­ 41 P W , 24 available. 5. Insert Arrangement "20 ­ 41 " designates insert arrangement. Refer to pages 56-61


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PDF MIL-C-26482, PT00CE-20-41PW PC06E PC00C-XX-XXX PCSE style MS3471 PT00CE-20-41PW MS3476 tool PC02C-XX-XXX MS3476 back shell PT/MS Amphenol MS3474
9137

Abstract: surface mount IRFZ44N IRFK3D450 IRLI640G IRFBg30 equivalent IRFK4H054 IRFP260 hexfet power mosfets international rectifier irf 3250 IRC540 equivalent
Text: 90 1.4 91239 IRF7311 20 0.026 5.9 4.1 0.026 1.4 91435 IRF7313 30 , ) IRF7421D1 30 0.035 4.1 3.3 50 2.5 0.50V @ 1.0A 91411 IRF7422D2 -20 0.09 , 0.024 41 29 1.8 83 91303 IRFZ44NS 60 0.028 50 36 1 150 91315 , IRLZ44NS 55 0.022 41 29 1.8 83 91347 IRLZ44S 60 0.028 50 36 1 150 , 4.1 2.6 2 125 90613 IRFBF20 900 8 1.7 1.1 2.3 54 90607 IRFBF30


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PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRFK3DC50 IRFK3F150 O-240AA IRFK3F250 IRFK3F350 9137 surface mount IRFZ44N IRFK3D450 IRLI640G IRFBg30 equivalent IRFK4H054 IRFP260 hexfet power mosfets international rectifier irf 3250 IRC540 equivalent
2012 - apple ipad 2 circuit schematic

Abstract: iphone sync usb cable BLUECORE hid module bluetooth schematic apple iphone solder bluecore 6 schematic iphone circuit diagram CSR BLUECORE dun iphone Bluetooth power Bluetooth IC with spi
Text: RN - 41 -DS RN- 41 /RN- 41 -N Class 1 Bluetooth Module Features · · · · · · · · Fully qualified , chip antenna (RN- 41 ) or without antenna (RN- 41 -N) Certifications: FCC, ICS, CE Environmentally friendly , The RN- 41 module is a small form factor, low power, class 1 Bluetooth radio that is ideal for , developing Bluetooth-specific hardware and software. The RN- 41 supports multiple interface protocols, is , high-performance, on-chip antenna and support for Bluetooth EDR, the RN- 41 delivers up to a 3-Mbps data rate for


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PDF RN-41/RN-41-N apple ipad 2 circuit schematic iphone sync usb cable BLUECORE hid module bluetooth schematic apple iphone solder bluecore 6 schematic iphone circuit diagram CSR BLUECORE dun iphone Bluetooth power Bluetooth IC with spi
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