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DP5Z4MX16PI3-12I datasheet (1)

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DP5Z4MX16PI3-12I DP5Z4MX16PI3-12I ECAD Model DPAC Technologies 64 Megabit FLASH EEPROM Original PDF

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2011 - Not Available

Abstract: No abstract text available
Text: %/8.0Ω 4.7 475 P 20%/20Ω A2*8%/18Ω P 20%/ 12Î © A2*8%/10Ω A 4%/7.5Ω J 20%/15Ω P 20%/ 12Î © A2*8%/7.5Ω A*8%/6.0Ω 685 P 20%/20Ω A2*8%/16Ω J 20%/15Ω P 20%/ 12Î © A2*8%/8.0Ω A*8%/6.0Ω J 20%/7.0Ω P 20%/ 12Î © A2*8%/7.5Ω A*8%/5.0Ω B 6%/3.5Ω A2 8%/8.0Ω A*8%/4.5Ω B 8%/3.0Ω J 20%/ 12Î © P 20%/ 12Î © A2*8%/15Ω J 20%/ 12Î © P 20%/ 12Î © A2*12%/8.0Ω A*8%/5.0Ω B 6%/3.5Ω J 20%/8.0Ω P 20%/ 12Î © A2*8%/10Ω A*8%/4.0Ω B 6%/3.0Ω P 20%/6.0Ω A2 8%/5.0Î


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PDF 50mm/Sec.
2009 - CFPP-12

Abstract: No abstract text available
Text: Compatibility & Load Tri-state HCMOS/TTL (5.0V) (CFPP-12, - 12I ) Maximum Capacitive Load TTL 40.0MHz TTL , variations over the operating temperature range) CFPP-9, -12 CFPP-9I, - 12I 0 to 70°C ­40 to 85 , -12, - 12I CFPP-9, -9I CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I 20.0MHz CFPP-9 I C Please note that the rise and fall times listed are the maximum values we


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PDF 2002/95/EC 150MHz CFPP-12, 100ps 250ps 175ps CFPP-12
fet to92

Abstract: SSM3J16TE SSM3J15TE 2SK2825 2SK2035 2SK1830 transistor ESM ssm3k14t SSM3J16FU SSM3K15FU
Text: Voltag 10 4Ω @V_GS=2.5V 12Î © @V_GS=2.5V TESM Y 3 Small-signal MOS FET ±10 5.2Ω @V_GS=1.5V 15Î , © @V_GS=-2.5V 32Ω @V_GS=-2.5V TESM Y 3 Small-signal MOS FET 10 4Ω @V_GS=2.5V 12Î © @V_GS=2.5V ESM Y 3 Small-signal MOS FET 10 4Ω @V_GS=2.5V 12Î © @V_GS=2.5V ESM Y 3 Built-in R_GS=1MΩ Small-signal MOS FET , Y 3 Small-signal MOS FET 8Ω @V_GS=2.5V 12Î © @V_GS=2.5V SSM Y 3 Small-signal MOS FET 10 4Ω @V_GS=2.5V 12Î © @V_GS=2.5V SSM Y 3 Built-in R_GS=1MΩ Small-signal MOS FET ±10 5.2Ω @V_GS=1.5V 15Î


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PDF SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 2SK2825 2SK2035 fet to92 SSM3J16TE SSM3J15TE transistor ESM ssm3k14t SSM3J16FU SSM3K15FU
Not Available

Abstract: No abstract text available
Text: ¼ˆ20) E12 (9) E12 (10) F12 ( 12ï ¼‰ C5 (40) C6 (20) SVP E7 (20) F8 , ¼‰ SVPC C6 (27,21,15) C6 (22) E7 (22) C6 (40) SVPE B6 ( 12ï , ¼ˆ25) F12 ( 12ï ¼‰ C6 (10) B6 (15) SVPS C6 (22) E7 (22) SVPC B6 ï , Characteristics Reliability SXV E7 (22) F8 (20) C6 (17) SVPG E12 ( 12ï ¼‰ E12 ( 12ï ¼‰ C6 (40) SVP Packing specifications (Radial lead type) F12 ( 12ï ¼‰ SVPB


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Yuasa NP7-12

Abstract: "RE" yuasa REL-B15-12 Yuasa REL-B24-12 Yuasa battery np yuasa FASTON connector JST VHR-2N RE yuasa
Text: .2-12 NP4-12 NP4-12L NP7-12 NP7-12L NP7-12FR NP12-12 NP17- 12I NP17-12IFR NP18-12 NP24- 12I NP24-12IFR NP38- 12I NP38-12IFR NP65- 12I NP65-12IFR 4.8 4.8 4.8 4.8 4.8 4.8 6.3 x x x x x x x , 8.99 13.48 13.48 22.67 22.67 27.5 27.5 NPL24- 12I NPL24-12IFR NPL38- 12I NPL38-12IFR NPL65- 12I NPL65-12IFR NPL78- 12I NPL78-12IFR RE SERIES (10 Year Life) 12 5 7 12 6.3 x 0.8mm Faston


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PDF effL78-12I NPL78-12IFR RE5-12 RE7-12 RE12-12 REL-B15-12 REL-B24-12 REL-B38-12 REL-B65-12 PG/0849 Yuasa NP7-12 "RE" yuasa REL-B15-12 Yuasa REL-B24-12 Yuasa battery np yuasa FASTON connector JST VHR-2N RE yuasa
m5m28f800-12

Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M28FB/T800VP- 12I 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS 3.3V / 5V Block Erase Flash Memory DESCRIPTIO N The Mitsubishi M o b ile F L A S H M5M28FB/T800VP- 12I is 3.3V (read , . The M5M28FB/T800VP- 12I is fabricated by CMOS technology for the peripheral circuits and DINOR (Divided , /Telecommunication 1 Rev. 4.1 '97-06-20 MITSUBISHI LSIs M5M28FB/T800VP- 12I 8,388,608-BIT (524,288 , Flash Memory BLOCK DIAGRAM 2 Rev. 4.1 '97-06-20 M ITSUBISHI LSIs M5M28FB/T800VP- 12I


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PDF M5M28FB/T800VP-12I 608-BIT 288-WORD 16-BIT) M5M28FB/T800VP-12I 608bit 100ms) m5m28f800-12
Not Available

Abstract: No abstract text available
Text: MITSUBISHI LSIs P R E LI M IN A R Y M5M28FB/T800VP- 12I Notice : This is not a final , 3.3V / 5V Block Erase Flash Memory DESCRIPTION The Mitsubishi M obileF L A SH M5M28FB/T800VP- 12I is , communication products. The M5M28FB/T800VP- 12I is fabricated by CMOS technology for the peripheral circuits and , '97-04-01 MITSUBISHI LSIs P R E LI M IN A R Y M5M28FB/T800VP- 12I Notice : This is not a final , LI M IN A R Y M5M28FB/T800VP- 12I Notice : This is not a final specification. Some parametric


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PDF M5M28FB/T800VP-12I 608-BIT 288-WORD 16-BIT) M5M28FB/T800VP-12I 608bit
2009 - Not Available

Abstract: No abstract text available
Text: © 0.68 684 - - - - A 4%/ 12Î © A*6%/10Ω 1.0 105 - - P 10%/25Ω P 10%/25Ω J 10%/30Ω P 20%/25Ω A2*6%/16Ω A 4%/10Ω 35 A 4%/18Ω A 4%/18Ω A 4%/15Ω A*6%/ 12Î , 20%/30Ω P 20%/20Ω A2*8%/ 12Î © A 4%/7.0Ω J 20%/25Ω P 20%/20Ω A2*8%/ 12Î © A*8%/5.5Ω J 20 , - P 20%/20Ω A2*8%/18Ω A 4%/8.0Ω 4.7 475 A2*8%/18Ω P 20%/ 12Î © A2*8%/10Ω A 4%/7.5Ω J 20%/15Ω P 20%/ 12Î © A2*8%/7.5Ω A*8%/6.0Ω 685 P 20%/20Ω A2*8%/16Ω P 20%/ 12Î


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2005 - in4148 smd

Abstract: IN4148
Text: ) (CFPP-12, - 12I ) 1 50pF TTL > 40.0 to 150.0MHz 25pF HCMOS < 66.0MHz 50pF HCMOS , °C (CFPP-9I, - 12I ) Storage Temperature Range 2.4V 1.4V 20%Vs 0.4V ­55 to 125 , CFPP-12, - 12I 1.0 to 40.0MHz ±25ppm, ±50ppm, ±100ppm 5.0V ±0.5% 45mA 4ns 4ns 45 , , ±50ppm, ±100ppm 5.0V ±0.5% 45mA 4ns 4ns 45/55% CFPP-12, - 12I 3.3V ±0.5% 25mA , 40/60% CFPP-12, - 12I 3.3V ±0.5% 25mA 4ns 4ns 40/60% CFPP-9, -9I >100.0 to


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PDF CFPP-12, 250ps 175ps IN4148 in4148 smd IN4148
1997 - M5M28FB800

Abstract: No abstract text available
Text: PRELIMINARY MITSUBISHI LSIs M5M28FB/T800VP- 12I Notice : This is not a final specification , Block Erase Flash Memory DESCRIPTION The Mitsubishi MobileFLASH M5M28FB/T800VP- 12I is 3.3V (read , products. The M5M28FB/T800VP- 12I is fabricated by CMOS technology for the peripheral circuits and DINOR , PRELIMINARY MITSUBISHI LSIs M5M28FB/T800VP- 12I Notice : This is not a final specification. Some , # Rev. 4.0 `97-04-01 PRELIMINARY MITSUBISHI LSIs M5M28FB/T800VP- 12I Notice : This is not


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PDF M5M28FB/T800VP-12I 608-BIT 288-WORD 16-BIT) M5M28FB/T800VP-12I 608bit M5M28FB/T800VON M5M28FB800
SS0P28

Abstract: ST62T01CM6-SMD CDIP28 ST62E20CF1 ST62T30BB6 SS0P-28 ST62E65CF1 st62t60cb6 data eprom ic st62t15cb6
Text: noflpo6Han MH^opMauMn - b HaweM OTflene npofla«. Kofl: OnMcaHMe Kopnyc ST62E20CF1 MCU 12I /0 4KUV EPROM , MC 9I/0 2K ROM 64B RAM S016 ST62T03CB6 MCU 9I/0 1K ROM 64B RAM DIP16 ST62T10CB6 MCU 12I /0 2K ROM 64B RAM DIP20 ST62T10CM6-SMD MCU 12I /0 2K ROM 64B RAM S020 ST62T15CB6 MCU 20I/0 2K ROM 64B RAM DIP28 ST62T15CM6-SMD MCU 20I/0 2K ROM 64B RAM S028 ST62T20CB6 MCU 12I /0 4K ROM 64B RAM DIP20 ST62T20CM6-SMD MCU 12I /0


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PDF npe06pa30BaieneM G03flaBaTb ST62T10C DIP20/SO20/SSOP2Ã ST62T20C ST62E20C DIP20/S020 ST62T60C ST62T15C SS0P28 ST62T01CM6-SMD CDIP28 ST62E20CF1 ST62T30BB6 SS0P-28 ST62E65CF1 st62t60cb6 data eprom ic st62t15cb6
Not Available

Abstract: No abstract text available
Text: M ITSUBISHI LSIs M5M28FB/T800VP- 12I 8,388,608-BIT (524,288-WORD BY 1 6-BIT) CMOS 3.3V / 5V Block Erase Flash Memory DESCRIPTION The Mitsubishi M o b ileF L A S H M5M28FB/T800VP- 12I is 3.3V , communication products. The M5M28FB/T800VP- 12I is fabricated by CMOS technology for the peripheral circuits and , '97-06-20 M ITSUBISHI LSIs M5M28FB/T800VP- 12I 8,388,608-BIT (524,288-WORD BY 1 6-BIT) CMOS 3.3V / 5V , /T800VP- 12I 8,388,608-BIT (524,288-WORD BY 1 6-BIT) CMOS 3.3V / 5V Block Erase Flash Memory FUNCTION


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PDF M5M28FB/T800VP-12I 608-BIT 288-WORD M5M28FB/T800VP-12I 100ms) 200nA
2005 - Not Available

Abstract: No abstract text available
Text: Compatibility s Tri-state HCMOS/TTL (5.0V) (CFPP-12, - 12I ) Maximum Capacitive Load for: TTL < 40.0MHz TTL , to 70°C (CFPP-9, -12) ­40 to 85°C (CFPP-9I, - 12I ) 50%Vs 2.4V 1.4V 0.4V 0V t T s Storage , % Model Number CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I Ordering Example Frequency Model Number Operating Temperature Code: I =


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PDF CFPP-12, 100ps 250ps IN4148 175ps
2011 - Not Available

Abstract: No abstract text available
Text: EMFR-OGLAN G) 2 or 4 or 6 or 8 or 12ï ¼‰ ( C EMFR-OGFD- 4 or 8) OGNLAP MM50×2C EMFR-OGNLAP MM50× 2 or 4 or 6 or 8 or 12ï ¼‰ ( C EMFR-OGNLAP MM62.5× 4 or 8) ( C 層型 P.22 P.22 P.22 製品名 製品詳細 OGNLAP-SM- 4 or 6 or 8 or 12ï ¼‰ ( C OGNLAP SM × 4 or 6 or 8 or 12ï


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R1RW0416DSB-2PI

Abstract: R1RW0416DGE-2PR HM62W16255HCTT-10 HM62W16255HCLTT-12 HM62W16255HCLTT-10 HM62W16255HCLJP-12 HM62W16255HCLJP-10 HM62W16255HCJPI-12 GS8160Z36BT-200I HM62W16255HCJP-10
Text: -50 GS8342S36E-200 HM62W16255HCJPI-12 GS74116AJ- 12I HM66AEB36105BP-60 GS8342S36E , -333 HM62W16255HCTTI-10 GS74116ATP-10I HM66AEB9404BP-33 GS8342R09E-300 HM62W16255HCTTI-12 GS74116ATP- 12I , -167 HM62W8511HCJPI-12 GS74108AJ- 12I HM66AQB18202BP-30 GS8342Q18E-333 HM62W8511HCLJP-10 GS74108AJ , -2PR GS74104AJ-12 R1RW0408DGE-2LR GS74108AJ-12 R1RW0408DGE-2PI GS74108AJ- 12I R1RW0408DGE , -2PR GS74116ATP- 12I R1RW0416DSB-2LR GS74116AJ-12 R1RW0416DSB-2PI GS74116AJ- 12I R1RW0416DSB


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PDF HM62W16255HCJP-10 GS74116AJ-10 HM66AEB36105BP-33 GS8342S36E-300 HM62W16255HCJP-12 GS74116AJ-12 HM66AEB36105BP-40 GS8342S36E-250 HM62W16255HCJPI-10 GS74116AJ-10I R1RW0416DSB-2PI R1RW0416DGE-2PR HM62W16255HCTT-10 HM62W16255HCLTT-12 HM62W16255HCLTT-10 HM62W16255HCLJP-12 HM62W16255HCLJP-10 HM62W16255HCJPI-12 GS8160Z36BT-200I HM62W16255HCJP-10
Not Available

Abstract: No abstract text available
Text: Analog Power AM50N03- 12I N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs , temperature 1 November, 2003 - Rev. A PRELIMINARY Publication Order Number: DS-AM50N03- 12I _A Analog Power AM50N03- 12I o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter , PRELIMINARY Publication Order Number: DS-AM50N03- 12I _A Analog Power AM50N03- 12I Package Information 3 November, 2003 - Rev. A PRELIMINARY Publication Order Number: DS-AM50N03- 12I


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PDF AM50N03-12I O-252 DS-AM50N03-12I
CDM62256-10

Abstract: No abstract text available
Text: range of 0s to +70° C. The CDM62256-10I and CDM62256- 12I have an operating temperature range of -40° to , . - - 100 ns 50 ns 70 mA 100//A 0° to +70°C CDM62256-10I 100 ns 50 ns 70 mA 200//A CDM62256- 12I , -10I, CDM62256- 12I ) For maximum reliability, operating conditions should be selected so that operation Is always , to +85° C (CDM62256-10I, CDM62256- 12I ); Voo = 5 V ± 10%, except as noted. DC Electrical , Memories(RAMs) CDM62256 AC ELECTRICAL CHARACTERISTICS at T a = 0° (o +70°C (CDM62256-10); CDM62256- 12I


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PDF CDM62256 A14----A 768-Word 28-pin CDM62256-10 CDMS2258-10I CDM62256-12I -40336R
CDM62256

Abstract: CDM62256-10 RCA-CDM62256
Text: CDM62256-10I and CDM62256- 12I have an operating tem perature range o f -40° to +85° C. The CDM62256 is , - 1 0 0 //A 0° to +70°C 100 ns 50 ns 70 mA CDM62256-10I 100 ns 50 ns 70 mA 2 0 0 //A CDM62256- 12I , -10I, CDM62256- 12I ) For maximum reliability, operating conditions should be selected to that operation Is always , -10I, ' CDM62256- 12I ); V od = 5 V ± 10%, except a t noted. DC Electrical CharacterUtlcs LIMITS , - - CDM62256- 12I MIN. -1 - - UNITS TYP/ - MAX. 1 3.0 100 70 TYP.* - MAX. 1


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PDF CDM62256 -----A40 768-Word 28-pin CDM62256-10I CDM622S6-12I CDM62256-10 92CS-40336R1 CDM62256 CDM62256-10 RCA-CDM62256
Not Available

Abstract: No abstract text available
Text: DEM2810C/DEM 2812C/DEM2815C/DEM2818C Inductance Range: 1.0~ 12ï ­H (DEM2810C), 0.47~ 12ï ­H (DEM2812C), 0.47~15H (DEM2815C), 0.47~ 12ï ­H (DEM2818C) 3.0 Max. DEM2810C DEM2812C DEM2815C DEM2818C TOKO


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PDF DEM2810C/DEM 2812C/DEM2815C/DEM2818C DEM2810C) DEM2812C) DEM2815C) DEM2818C) DEM2810C DEM2812C DEM2815C DEM2818C
BS6290

Abstract: NPL24-12I Yuasa battery yuasa np yuasa C20-C24 24 VRLA
Text: Data Sheet NPL SERIES - NPL24- 12I NPL Valve Regulated Lead-acid Batteries (VRLA) The NPL range is an enhanced NP design resulting in a longer service life (7 - 10yrs). All other attributes and , Capacity (Ah) NPL24-12 NPL24- 12I 20hr to 1.75vpc 20°C 24 10hr to 1.75vpc 20°C 22.3 , 50°C (fully charged condition) www.yuasa-battery.co.uk NPL Data Sheet NPL SERIES - NPL24- 12I , Cat. No. NPL24- 12I February 07 E&O.E. www.yuasa-battery.co.uk Distributed by Yuasa


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PDF NPL24-12I 10yrs) BS6290 275vpc NPL24-12I Yuasa battery yuasa np yuasa C20-C24 24 VRLA
2012 - Not Available

Abstract: No abstract text available
Text: †26 (φ7∼φ 12ï ¼‰ 1 2 φ25 φ14.2 4 3 φ26.4 電源用 4 芯:CM03-P4S , ©ç”¨ã‚±ãƒ¼ãƒ–ル外径) 7 8-16UN-2B φ26 42 (φ7∼φ 12ï ¼‰ 51 φ25 φ14.2 信号用 5 , ¼‰ ・ピンコンタクト(オス)は添付されています。 7 8-16UN-2A (φ7∼φ 12ï ¼‰ (適用ケーブル外径) ï , ¼” (φ7∼φ 12ï ¼‰ 1 2 φ14.3 電源用 4 芯:CM03-J4P φ26.4 φ25 (78) 24


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PDF 13/16-20UNEF-2A -16UN-2B CM03-PR5S-S-CF
2007 - Not Available

Abstract: No abstract text available
Text: 1.2Î ¼ï¼‚ Gold Min. Other type 3 15μ" Gold Min. 50μ" Nickel Overall All type , ¼ï¼‚ Nickel Overall All type A Selective 1.2Î ¼ï¼‚ Gold Flash 50μ" Nickel Contact Area , Selective 5μ" Gold 50μ" Nickel Contact Area CCF I Selective 15μ" Gold 1.2Î , 1.2Î ¼ï¼‚ Gold Flash Plated over 50μ" Nickel Contact Area All type K Selective 5Î


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M5M28FB800

Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M28FB800VP- 12I ÿome 8388608-BIT(524288-WORD BY 16-BIT) CMOS 3.3V/5V BACK , MITSUBISHI ELECTRIC 2-37 MITSUBISHI LSIs M5M28FB800VP- 12I * « ^ s n '' o* ^,1 ? ae* S , l# ^ M5M28FB800VP- 12I s ^ s,pe;:-' . spe!;,'oa'rm,-J'ar.ne 8388608-BIT(524288-WORD BY 16 , 2 39 MITSUBISHI LS Is o R E U N "HPiBY M5M28FB800VP- 12I 8388608-BIT(524288-WORD BY 16 , ELECTRIC MITSUBISHI LSIs M5M28FB800VP- 12I 8388608-BIT(524288-WORD BY 16-BIT) CMOS 3.3V/5V BACK


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PDF M5M28FB800VP-12I 8388608-BIT 524288-WORD 16-BIT) M5M28FB800
Not Available

Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines (LB series M type / LE series M type) LEM2520T1R2J Features Item Summary 1.2Î ¼H(±5%), 230mA, 1008 Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1008/2520 L 2.5mm ±0.2 Inductance 1.2Î ¼H(±5%) W 2mm  , ) Rated Current 230mA DC Resistance (max) 1.2Î © Temperature Range -40℃ to 85â


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PDF LEM2520T1R2J 230mA, 2000pcs 96MHz 230mA 180MHz 30min
2011 - Not Available

Abstract: No abstract text available
Text: 1 3−4  15−φ0.8(Min)P= 12Ï † 4 5 3 2 1 C1 C2 1 2 1 2 1 1 3 4 1-12 1−12 13−φ0.8(Min)P= 12Ï † 2−6  14−φ0.8(Min)P= 12Ï , 基準マーク側 基準マーク側 4−3  16−φ0.8(Min)P= 12Ï † 2 ス ッ イ チ裏面ã


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PDF DC20V AC500Vã 6-32UNCã
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