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DP5Z2MW32PV3-15I datasheet (1)

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DP5Z2MW32PV3-15I DP5Z2MW32PV3-15I ECAD Model DPAC Technologies 64 Megabit FLASH EEPROM Original PDF

DP5Z2MW32PV3-15I Datasheets Context Search

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1999 - DP5Z2MW32PV3

Abstract: Dense-Pac Microsystems
Text: No file text available


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PDF DP5Z2MW32PV3 DP5Z2MW32PV3 5555H 30A180-12 Dense-Pac Microsystems
Not Available

Abstract: No abstract text available
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PDF DP5Z2MW32PV3 32PV3 120ns 200ns 30A180-12
photo-electric switch

Abstract: No abstract text available
Text: Photoelectrics Diffuse-reflective, Background Suppression Types PA 15I , PB 15I · · · · · · , break switching 36 x 18 x 60 Aluminium PA 15I NPA PA 15I NPA-1 PA 15I PPA PA 15I PPA-1 36 x 18 x 75 ABS PB 15I NPA PB 15I NPA-1 PB 15I PPA PB 15I PPA-1 Specifications , 0.5 m (IEC 60068-2-32) 1 PA 15I , PB 15I Specifications (cont.) Dielectric voltage Housing , ) Power supply Object present Output + LED on, P. 15I . PA Truth Table Wiring Diagrams Make


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Not Available

Abstract: No abstract text available
Text: © 100Ω - 47KΩ 100Ω - 47KΩ 100Ω - 47KΩ 1KΩ - 47KΩ 15Î © - 360kΩ 15Î © - 360kΩ 10Ω - 360kΩ — 15Î © - 360kΩ 15Î © - 360kΩ 10Ω - 360kΩ — 100Ω - 100KΩ 100Ω - 100KΩ 51Ω - 100kΩ — — 100Ω - 300kΩ 100Ω - 300kΩ 51Ω - 300kΩ — — — 100Ω - 100kΩ 100Ω - 100kΩ 15Î © - 1MΩ 15Î © - 1MΩ — 100Ω - 300kΩ 100Ω - 300KΩ 15Î © - 1MΩ 15Î © - 1MΩ — — 10Ω - 360kΩ — — 100Ω - 100kΩ 100Ω - 100kΩ 10Ω - 1MΩ 15Î © - 1MΩ 10Ω - 1MΩ 15Î © - 1MΩ â


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2012 - RN73H

Abstract: No abstract text available
Text: © 10Ω - 120kΩ 100Ω - 47kΩ — — 100Ω - 59kΩ 100Ω - 59kΩ 100Ω - 59kΩ 15Î © - 360kΩ 15Î © - 360kΩ 10Ω - 360kΩ 15Î © - 360kΩ 15Î © - 360kΩ 10Ω - 360kΩ — — 10Ω - 360kΩ — 100Ω - 100kΩ — 100Ω - 100kΩ 100Ω - 100kΩ 100Ω - 100kΩ 15Î © - 1MΩ 15Î © - 1MΩ 10Ω - 1MΩ 15Î © - 1MΩ 15Î © - 1MΩ 10Ω - 1MΩ — — 10Ω - 1MΩ 100Ω - 300kΩ — — 100Ω - 300kΩ 100Ω - 300kΩ 100Ω - 300kΩ 15Î © - 1MΩ 15Î © - 1MΩ 10Ω - 1MΩ 15Î © - 1MΩ 15Î © - 1MΩ 10Ω - 1MÎ


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PDF RN73H RN73H
2007 - Not Available

Abstract: No abstract text available
Text: 15Î ¼H + 4Ω + 15Î ¼H THD+N = 1% (max), f = 1kHz, 22kHz, BW VDD = 3.3V 1.7 W RL = 15Î ¼H + 8Ω + 15Î ¼H THD+N = 1% (max), f = 1kHz, 22kHz, BW VDD = 3.3V 1.2 RL = 15Î ¼H + 4Ω + 15Î ¼H THD+N = 10% (max), f = 1kHz, 22kHz, BW VDD = 2.7V VDD = 3.3V 1.11 1.9 W W RL = 15Î ¼H + 8Ω + 15Î ¼H THD+N = 10% (max), f = 1kHz, 22kHz, BW VDD = 2.7V VDD = 3.3V 0.98 1.55 W W , Total Harmonic Distortion + Noise RL = 15Î ¼H + 8Ω + 15Î ¼H, VDD = 2.7V PO = 500mW, f = 1kHz, RL =


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PDF LM48510 LM48510
1991 - cb4re

Abstract: stopwatch vhdl
Text: Foundation Series 1.5i Tutorials In-Depth Tutorial- Schematic-Based Designs In-Depth , In-Depth Tutorial-Timing Simulation Foundation Series Quick Start Guide 1.5i - 0401762 Printed in U.S.A. Foundation Series Quick Start Guide 1.5i R The Xilinx logo shown above is a registered , Guide 1.5i Foundation Series Quick Start Guide 1.5i Xilinx Development System Preface About , additions to Xilinx's newest product-Foundation 1.5i . The primary focus of this guide is to show the


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PDF XC2064, XC3090, XC4005, XC5210, XC-DS501 cb4re stopwatch vhdl
2013 - Not Available

Abstract: No abstract text available
Text: Emissions-ï€ farbeï€ ï€ Color of Emission Lichtstärke1) Seite 15ï € ï€ ï€ Luminous Intensity1) page 15ï € ï€ IF = 20 mAï€ IV (mcd) Lichtstrom2) Seite 15ï € ï€ ï€ Luminous Flux2) page 15ï € ï€ IF = 20 mAï€ ï†V (mlm) Bestellnummerï€ ï€ ï€ Ordering Code LS T67F-T2V2 , € 10 s, D = 0.1, TA=25°C IFM 100 mA Sperrspannung3) Seite 15ï € Reverse voltage3) page 15ï , mW Wärmewiderstandï€ Thermal resistanceï€ Sperrschicht/Umgebung4) Seite 15ï € Junction


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2004 - Not Available

Abstract: No abstract text available
Text: =2Ω) Gain Bandwidth :550kHz ( 15Î ¼A: 210kHz) Slew Rate :0.5V/μS High Capacitance Load :CL=200pF Low Supply Current :100μA, 15Î ¼A Ultra Small Package :SOT-25 mini mold ■PIN ASSIGNMENT , Current 1 : 15Î ¼A 2 : 100μA ③ Internal Standard Number 0 : Fixed ④ Load , MARK ③ ④ SUPPLY CURRENT 15Î ¼A 100μA ②Based on internal standards (TOP VIEW , trademark of Motorola. 1397 XC221A Series ■ELECTRICAL CHARACTERISTICS XC221A1100 IDD = 15Î


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PDF 550kHz XC221A1200MR XC221A OT-25 550kHz 100ontinued) XC221A
2014 - Not Available

Abstract: No abstract text available
Text: = 4Ω + ≥ 15Î ¼ H THD+N ≤ 10% BW ≤ 30kHz TAMB = 25° C 2.5 0.2 Power Dissipation (W , = 5V F = 1kHz RL = 8Ω + ≥ 15Î ¼ H THD+N ≤ 10% BW ≤ 30kHz TAMB = 25° C 1.5 0.06 0.04 , 0.2 0.4 0.6 0.8 1.0 Output Power (W) Vcc = 3.6V F = 1kHz RL = 4Ω + ≥ 15Î ¼ H THD+N â , Dissipation 20 0 0.0 0.2 Vcc = 3.6V F = 1kHz RL = 8Ω + ≥ 15Î ¼ H THD+N ≤ 10% BW ≤ 30kHz , ) Vcc = 2.7V F = 1kHz RL = 8Ω + ≥ 15Î ¼ H THD+N ≤ 10% BW ≤ 30kHz TAMB = 25° C 0.4 0.020


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PDF TS2007FC TS2007EIJT, TS2007FC TS200n DocID14937
M5M27C102K-15I

Abstract: M5M27C102 M5M27C102K
Text: MITSUBISHI LSIs M5M27C102K-151/ M5M27C102JK- 15I 1048576-BIT(65536-WORD BY 16-BIT) CMOS , programming feature of the M5M27C102K- 15I . J K - 151 allows 2 words of data to be simultaneously programmed , M5M27C102K- 15I /M5M27C102 JK- 15I 1048576-BIT(65536-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY , Floating Floating MITSUBISHI LSIs M5M27C102K- 15I /M5M27C102 JK- 15I 1048576-BIT(65536-WORD BY 16 , ÖE OUTPUT A MITSUBISHI ELECTRIC 2 — 49 MITSUBISHI LSIs M5M27C102K- 15I /M5M27C102


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PDF M5M27C102K-151/ M5M27C102JK-15I 1048576-BIT 65536-WORD 16-BIT) 27C102K-15I, JK-151 K-15I M5M27C102K-15I M5M27C102 M5M27C102K
Not Available

Abstract: No abstract text available
Text: . ( %3%$ (/3%$ :&3%!< ±° 15I ±° 15I ' 3%!< ±° 15I ±° 15I :&3%!2& ±° 15I -±° 15I 5 ' 3%!2& 3%!1$" :!%$3 5 ±° 15I ±° 15I °1H °1H °1 °1H °1H


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2013 - Not Available

Abstract: No abstract text available
Text: =400nH, 2.5 Switching Times s o (2), 1.6 Tj=25 C RG= 15Î © o tf 1.9 Fall Time TBD Tj=125 C VGE , = 15Î © o Eoff(10%) 0.37 TBD Tj=125 C VGE=+/-15V Turn Off Loss o Eoff(full) 0.48 Tj=125 C o , =250A, o Reverse Recovery Current Irr A 330 TBD Tj=125 C Ls=400nH, RG= 15Î © (2) o 330 Tj=150 C o , ) 0.40 Tj=125 C Ls=400nH, RG= 15Î © (2) o Err(full) 0.45 Tj=150 C Notes:(2) RG value is the test , €‘ 【Conditions】 Ls=400nH Vcc=1800V VG=±15V RG= 15Î © Ls=400nH Vcc=1800V VG=±15V RG= 15Î © Eon(full


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PDF IGBT-SP-12023 MBM250H33E3
2014 - NMC0402X5R105K10TRPF

Abstract: NMC1210X5R226K16TRPLPF NMC High CV
Text: 50.0 25 1.35 1.5Î ¼F K 5 66.6 25 1.45 2.2μF K 10 22.7 25 2.2 , ¼F NMC2225X7R155K25TRPLPF NMC2225X7R225K25TRPLPF 10μF 4.7μF 2225 K 2.5 100.0 62.5 2.2 1.5Î , NMC0805X5R105K10TRPLPF 1.0μF K 7.5 100.0 25 1.45 1.5Î ¼F K 5 66.7 25 1.45 2.2Î , NMC0805Y5V155Z10TRPLPF 1.5Î ¼F Z 12.5 66.6 15 1.45 NMC0805Y5V225Z10TRPLPF 2.2μF Z 12.5 , NMC0805Y5V106Z10TRPLPF 10μF Z 30 5.0 15 1.45 NMC0805Y5V155Z16TRPLPF 1.5Î ¼F Z 9 66.6


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2014 - NMC0201X5R225M6

Abstract: NMC0402X5R105K10TRPF NMC1210X5R226K16TRPLPF NMC High CV
Text: NMC0805X7R105K10TRPLPF 1.0μF K 5 50.0 25 1.35 1.45 NMC0805X7R155K10TRPLPF 1.5Î ¼F K 5 , NMC1812X7R475K50TRPLPF 1.0μF 1.0μF K 2.5 100.0 62.5 2.2 1.5Î ¼F K 2.5 66.6 62.5 2.2 , NMC0805X5R155K10TRPLPF ® 4 10 1.5Î ¼F K X5R Continue on next page NIC COMPONENTS CORP. www.niccomp.com , 87.5 1.9 NMC1206X5R156M35TRPLPF 35 NMC1206X5R106K50TRPLPF ® 5 50 15Î ¼F M , 1.5Î ¼F Z 12.5 66.6 15 1.45 NMC0805Y5V225Z10TRPLPF 2.2μF 0805 12.5 45.4


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2014 - Not Available

Abstract: No abstract text available
Text: Inductance-Current Characteristics (Typ.) 1000 100 47μH 33μH 22μH 15Î ¼H 10μH Inductance (μH) L (μH) 47μH 33μH 22μH 15Î ¼H 10μH 6.8μH 6.8μH 100 10 10 4.7μH 3.3μH 2.2μH 1.5Î ¼H 1.0μH 1 1 1.0μH 0.1 0.1 1.5Î ¼H 2.2μH 3.3μH 4.7Î , Temperature Rise Characteristics (Typ.) 50 45 47μH 40 22μH 15Î ¼H 33μH Temperature (°C) 35 4.7μH 3.3μH 1.5Î ¼H 2.2μH 10μH 6.8μH 30 25 1.0μH 20 15 10 5 0 0 200 400


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PDF 180mm 330mm 1650mA 1620mA 140MHz
2013 - Not Available

Abstract: No abstract text available
Text: Inductance-Current Characteristics (Typ.) 100 100 15Î ¼H 22μH 10μH 15Î ¼H 6.8μH 4.7Î , ¼H 2.2μH 1.5Î ¼H 1.2μH 10 10μH 1 10 1 1.0μH 1.0μH 0.47μH 1.5Î ¼H 0.1 0.1 1 , ) 35 30 15Î ¼H 25 22μH 2.7μH 6.8μH 10μH 1.0μH 3.3μH 4.7μH 1.5Î ¼H 20


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PDF 180mm 330mm LQH5BPBR47NT0p 100kHz
2013 - Not Available

Abstract: No abstract text available
Text: Inductance-Current Characteristics (Typ.) 100 1000 47μH 33μH 22μH 47μH 33μH 22μH 15Î ¼H 10μH 15Î ¼H Inductance (μH) L (μH) 100 6.8μH 4.7μH 3.3μH 2.2μH 1.5Î ¼H 10 10μH 10 6.8μH 4.7μH 3.3μH 2.2μH 1.5Î ¼H 1.0μH 1 1.0μH 1 0.68μH 0.68μH 0.1 1 , Temperature Rise Characteristics (Typ.) 50 15Î ¼H 22μH 45 10μH 6.8μH 2.2μH 4.7μH 40 1.0μH 47μH 3.3μH Temperature (°C) 35 33μH 1.5Î ¼H 30 0.68μH 25 20 15 10


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PDF 180mm LQH3NPNR68NJRp 2700mA 2860mA 1280mA 20ability
2013 - Not Available

Abstract: No abstract text available
Text: ¼H 15Î ¼H 10μH 6.8μH 4.7μH 3.3μH 2.2μH 1.5Î ¼H 1.0μH 100 150μH 100μH Inductance (μH) L (μH) 68μH 47μH 33μH 4.7μH 22μH 250μH 3.3μH 15Î ¼H 2.2μH 1000 10μH 1.5Î ¼H 6.8μH 1.0μH 100 10 10 1 1 0.001 0.01 0.1 1 Frequency (MHz) 10 , ¼H 1.5Î ¼H Temperature (°C) 35 30 25 20 15 10μH 15Î ¼H 22μH 33μH 47μH 68μH 10 5


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PDF 180mm 330mm 1650mA 1525mA 16ability
2006 - Not Available

Abstract: No abstract text available
Text: Typ (3) Limit (4) (5) Units (Limits) RL = 15Î ¼H + 4Ω + 15Î ¼H THD+N = 1% (max), f = 1kHz, 22kHz, BW VDD = 3.3V RL = 15Î ¼H + 8Ω + 15Î ¼H THD+N = 1% (max), f = 1kHz, 22kHz, BW VDD = 3.3V RL = 15Î ¼H + 4Ω + 15Î ¼H THD+N = 10% (max), f = 1kHz, 22kHz, BW VDD = 2.7V VDD = 3.3V Output Noise AV 0.98 1.55 W W PO = 500mW, f = 1kHz, RL = 15Î ¼H + 8Ω + 15Î ¼H, VDD = 2.7V 0.06 % PO = 500mW, f = 1kHz, RL = 15Î ¼H + 8Ω + 15Î ¼H, VDD = 3.3V 0.07 % 67 µVRMS


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PDF LM48510 SNAS275E LM48510
m5m27c102k

Abstract: m5m27c102 M5M27C102JK-15I M5M27C102jk ao21 M5M27C102K15I
Text: MITSUBISHI LSIs M5M27C102K- 15I / M5M27C102JK- 15I 1048576-BIT(65536-WORD BY 16-BIT) CMOS ERASABLE , 47 MITSUBISHI LSIs M5M27C102K- 15I /M5M27C102JK- 15I 1048576-BÍT(65536-WORD BY 16-BIT) CMOS , M5M27C102K- 15I /M5M27C102JK- 15I 1048576-BIT(65536-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY , ñ BB > 2 - 49 MITSUBISHI LSìS M5M27C102K- 15I /M5M27C102 JK- 15I 1048576 , M5M27C102K- 15I /M5M27C102 JK- 15I 1048576-BIT(65536-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY


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PDF M5M27C102K-15I/ M5M27C102JK-15I 1048576-BIT 65536-WORD 16-BIT) 27C102K-151, JK-151 m5m27c102k m5m27c102 M5M27C102JK-15I M5M27C102jk ao21 M5M27C102K15I
2009 - Not Available

Abstract: No abstract text available
Text: ˆ©å¾—帯域幅 : 550kHz ( 15Î ¼A 品: 210kHz) ●各種バッテリー駆動機器 スルーレート : 0.5V/μsec é«˜å®¹é‡è² è· : CL=200pF 対応 低消費電流 : 100μA 品、 15Î ¼A å , ©³ç´°å†…容 1 1 チャネル 1 15Î ¼A 2 100μA ③ 社内基準に基づく 0 , „ƒ XC221A シリーズ ■電気的特性 XC221A1100 é … 目 IDD = 15Î ¼A Ta = 25℃ 記å , シリーズ ■特性例 ●XC221A1100 < 消費電流 15Î ¼A 品 > ゲイン Phase margin (ã


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PDF XC221A JTR1201-002 550kHz 200pF OT-25
2009 - JTR0704-002

Abstract: No abstract text available
Text: であるため電源電圧に注 意して下さい。 SD1 : MA2Q737 (ショットキータイプ、松下) L1 : 15Î ¼H (D412F , ³¨ 意して下さい。 SD1 : MA2Q737 (ショットキータイプ、松下) L1 : 15Î ¼H (CDRH5D28 ,スミã , であるため電源電圧に注 意して下さい。 SD2 : MA2Q737 (ショットキータイプ、松下) L2 : 15Î , 15Î ¼H (CDRH5D28, スミダ) : XC9504B093A 10μH (CDRH5D28, スミダ) : XC9504B095A SD1, SD2 : CRS02 , £½) 使用部品 L1 : 22μH (CDRH5D28, スミダ) : XC9504B092A 15Î ¼H (CDRH5D28, スミダ) : XC9504B093A 10Î


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PDF XC9504 JTR0704-002b JTR0704-002
2014 - lqh32pn101

Abstract: No abstract text available
Text: Continued from the preceding page. c Inductance-Frequency Characteristics (Typ.) 1000 10 1.5Î ¼H 1.0μH 1 120μH 100μH 68μH 47μH 33μH 22μH 15Î ¼H 10μH 6.8μH 4.7μH 3.3μH 2.2μH 1.5Î ¼H 1.0μH 0.47μH 100 Inductance (μH) L (μH) 1000 120μH 100μH 68μH 47μH 33μH 22μH 15Î ¼H 10μH 6.8μH 4.7μH 3.3μH 2.2μH 100 c Inductance-Current , .) 100 90 0.47μH 80 Temperature (°C) 70 60 15Î ¼H 3.3μH 10μH 4.7μH 50 33Î


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PDF LQH32PN 180mm 330mm LQH32PNR47NN0p 3400mA 2550mA lqh32pn101
2013 - Not Available

Abstract: No abstract text available
Text: ) L (μH) 15Î ¼H 10μH 6.8μH 4.7μH 3.3μH 2.2μH 10 22μH 15Î ¼H 10μH 6.8μH 4.7μH 3.3μH 2.2μH 1.5Î ¼H 1.0μH 10 1 1 1.5Î ¼H 0.1 0.1 1.0μH 0.1 1 10 Frequency , Characteristics (Typ.) 100 90 80 15Î ¼H 22μH Temperature (°C) 70 33μH 60 1.0μH 47μH 1.5Î ¼H 4.7μH 3.3μH 50 6.8μH 40 2.2μH 10μH 30 20 10 0 0 500 1000


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PDF LQH44PN 180mm 330mm LQH44PN1R0NJ0p 100kHz 2000mA 1530mA 130Mability
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