The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
AM3354BZCED30 Texas Instruments ARM Cortex-A8 Microprocessor 298-NFBGA
AM3354BZCEA30 Texas Instruments ARM Cortex-A8 Microprocessor 298-NFBGA
FX053013 Texas Instruments Sitara Processor 298-NFBGA 0 to 90
AM3354BZCE30 Texas Instruments ARM Cortex-A8 Microprocessor 298-NFBGA
AM3352BZCE30R Texas Instruments Sitara Processor: ARM Cortex-A8, 1Gb Ethernet, Display 298-NFBGA
AM3356BZCEA60 Texas Instruments Sitara Processor: ARM Cortex-A8, PRU-ICSS 298-NFBGA

Search Stock (5)

  You can filter table by choosing multiple options from dropdownShowing 5 results of 5
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
CG1RA20-15-XA20-CDL298 SMC Corporation of America Allied Electronics & Automation 0 $489.43 $489.43
HIR-C19D/L298-P01/TR Everlight Electronics Co Ltd Future Electronics 0 $6.00 $2.00
HIR-C19D/L298-P01/TR Everlight Electronics Co Ltd Future Electronics 2,000 $1.80 $1.80
HIR-C19D/L298-P01/TR Everlight Electronics Co Ltd New Advantage Corporation 1,200 $3.00 $2.77
PDL-298 Panduit Corp Master Electronics 145,000 $0.09 $0.06

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DL-298 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
abb rqda 040

Abstract:
Text: Enclosure drwg. 7451 298 -HA S »^5 ® — c ï C ŒO = „"E CB-C 0) -4) O > -C -C O^Z 3 « U 4) °> â , ¯ o ° o ^ '-2 c c»- = V 4) O iE o. * RADSS 1 Zone, 12 Lines, 3-phase Circuit Diagram 7451 298 , information. Circuit Diagram 7451 298 -HA, sheet 1: The RADSS relay consists of two, mechanically separate , Enclosure drwg. 7451 298 -HA O « 4> > i û -c "o — e un o)- — - ï^t; 4)-* j) "> u«*- ¡r co no w o c n , Differential Protection RFA August 1980 RF 637 321 Enclosure drwg. 7451 298 -HA The RXMM 1 relays are referred


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PDF 298-HA 37016-AÃ 637016-AB abb rqda 040 Brown Boveri SERIES 212 RADSS 7451 298-HA RADSS 7451 asea time-lag relay RI differential relay ge asea ri 5A relay rqda-040 RADSS
200V470

Abstract:
Text: 1.99 2.28 2.64 2.98 1.99 2.30 2.68 3.04 3.40 3.81 2.38 3.00 3.39 3.83 4.30 4.74 3.10 , 1000 2.22 35×40 S55 1500 2.56 1200 2.42 35×45 S56 1800 2.98


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PDF 20120Hz 120Hz C5101-1-4 200V470 s25 373 5 6800 UF 63 V 80UF C5101
soli capacitors

Abstract:
Text: 232 13×22 269 16×28 317 8×16 156 8×16 215 10×17 268 10×21 298


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PDF 120Hz) soli capacitors SOLI ELECTRONICS INDUSTRY .1J 100v DC 612 22 40
9343A

Abstract:
Text: JL 9343A Rev. C Page 1 of 2 NEL CRYSTAL CLOCK OSCILLATORS Reliability Analysis HA-1420/1520 Method per MIL-HDBK-217F I. I.C. Monolithic Bipolar and MOS Digital SSI/MSI (less than 100 gates) ðQ = 1 Quality factor for hybrid A = 7532 Technology and package Tj = 75 Device worst case junction temperature (°C) X = -A(1/(Tj+273) -(1/ 298 ) ðT = 0.1 ex Temperature acceleration factor Voltage derating stress factor ðV = 1 ðE = 1 Environmental factor for hybrid C1 = .010 Circuit complexity failure


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PDF HA-1420/1520 MIL-HDBK-217F Failures/106 Failures/109 9343A MIL-HDBK-217F MILHDBK-217F Quality factor
2008 - transistor 12p smd

Abstract:
Text: Crystal unit Id(nA) 301 344 298 298 237 301 344 298 298 237 Vstart( V ) Ts(sec) 0.83


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PDF 27-Aug-08 S-35199A-12P /-20x10-6 768kHz 65kohm 1x10-6W transistor 12p smd 12p smd transistor smd 12p
2008 - Not Available

Abstract:
Text: Circuit characteristics ( at 25°C ) Vdd=1.1V 3.7 0.0 0.01 1041 21 298 0.80 0.49 0.24 Vdd=3.0V 3.7 0.0 0.01 1041 21 298 0.80 0.49 0.09 Vdd=1.1V -124 -138 Vdd=3.0V Remarks -8 2 , CL Fo = fr ×{ C1/ ( 2×( Co + CL ) + 1 } ( Hz ) C0 Crystal unit Id(nA) 298 331 282 279 224 298 331 282 279 224 Vstart( V ) Ts(sec) 0.80 1.02 0.81 0.88 0.69 0.80 1.02


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PDF 27-Aug-08 S-35199A-12P 768kHz /-20x10-6 1x10-6W -430kohm
10-16 capacitor

Abstract:
Text: 15 22 28 35 50 58 77 105 135 184 276 298 436 562 D×L mm 6.3×11 8×11.5 8×11.5


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PDF CD110X 120Hz) 01CRUR 03CRUR 10-16 capacitor CD110X cd110x capacitor
178 08T

Abstract:
Text: 15000 18000 Arms 1.60 1.99 2.28 2.64 2.98 µF 4700 6800 8200 10000 12000 Arms , - - 1800 2.98 1500 2.52 1200 2.39 1000 2.47 390 1.60 330 1.45 , 1200 2.42 - - 390 1.60 - - 1800 2.98 1500 2.56 1200 2.42 1000


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PDF 3000hours 120Hz) 120Hz 2010/2011E 178 08T C5101 S53 MARKING
2008 - 18650 battery

Abstract:
Text: 4.6 5.1 4.5 5.5 5.5 6.6 10.5 48.0 33.7 48.2 59.0 34.2 50.0 33.8 50.0 48.7 29.8


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PDF 56tomized 18650 battery 18650 lithium ion li-ion 18650 battery 18650 varta li-ion 18650 battery 18650* battery 503759 Varta 18650 18650 lithium battery LPP 523450 DL
200V470

Abstract:
Text: 1.99 12000 1500 2.98 2.09 18000 2200 2.32 3300 5600 2.67 8200 2.89 S27 , - - 1800 2.98 1500 2.52 1200 2.39 1000 2.47 390 1.60 330 1.45 , - - 390 1.60 - - 1800 2.98 1500 2.56 1200 2.42 1000 2.47


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PDF 20120Hz 120Hz C5101-1-4 200V470 C5101
2003 - DL-3147-060

Abstract:
Text: : 29.8 ° Min : 28.7° Max: 32.5° n(p) 200 150 100 50 0 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 Qh(°) 26


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PDF DL-3147-060 15000h dl-3147-060 DL3147-060
Not Available

Abstract:
Text: 30×60 35×50 40×40 35×60 40×50 0.15 0.15 0.15 0.15 0.20 2.68 2.69 2.68 2.98 2.92


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PDF 000Hrs 120Hz) Arms/85,
EPIC-1ZS

Abstract:
Text: 165.5 42.4 3000 200 500 95.0 38.1 1500 100 500 96.6 29.8 1000 50 500 96.6 29.8 2000 150 2000 96.6 29.8 3000 150 1000 80.5 19.9


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PDF SN74CBT' SN74CBT CBT6800 CBT6800A 74CBT6800 74CBT6800 74CBT6800A EPIC-1ZS 50C24 50C24.1 SN74CBTD3306 SN74CBT6800A SN74CBT6800 SN74CBT3306 SN74CBT3126 SN74CBT3125 TS-095
.1J 100v

Abstract:
Text: 16 × 27 317 8 × 16 195 8 × 16 254 10 × 17 268 10 × 21 298 13 × 22


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PDF 120Hz, 1000F, 02shall 1000F .1J 100v
Not Available

Abstract:
Text: MAX is the maximum recommended series resistance between the Gate Supply and the FET Gate. 2-98 , 3.0 5.7 6.9 7.5 8.2 8.6 9.2 9.5 9.9 10.2 10.5 10.8 10.8 10.8 10.9 10.8 10.8 10.8 MAG1 (dB) 33.7 29.8


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PDF NEZ4450-15D/15DL NEZ4450-8D/8DL NEZ4450-4D/4DL NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL -15DL
2002 - CE02

Abstract:
Text: 10 × 17 10 × 21 13 × 22 13 × 27 268 344 436 664 10 × 21 13 × 22 13 × 27 16 × 27 298


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PDF 120Hz, 1000F, 02shall 1000F CE02
CE02

Abstract:
Text: 10 × 17 10 × 21 13 × 22 13 × 27 268 344 436 664 10 × 21 13 × 22 13 × 27 16 × 28 298


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PDF 120Hz, 1000F, 02shall 1000F CE02
2002 - tea 5010

Abstract:
Text: 13 215 6.3 × 13 231 8 × 13 298 8 × 16 319 10 × 17 401 10 × 21 459


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PDF 120Hz, CV1000 tea 5010
1999 - Not Available

Abstract:
Text: Amps 298 625 IN Total Power Dissipation @ TC = 25°C 74.5 ±40 IM TJ,TSTG A , Characteristic PR Symbol MAX 298 Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) Q


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PDF APT50M50PVR
MP02X

Abstract:
Text: 30 30 50 30 30 50 50 190 190 334 352 175 175 312 277 595 134 134 355 490 298 298 524 553 275


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PDF sx103 MP02X190-* MP03X190-* MP03X330-* MP03X360-* MP03-W3A 10Thd 1500g MP04-W3A MP02X
BZP630-C12

Abstract:
Text: przewodzenia Moc strat; tamb = 298 K (25°C) Temperatura zlqcza Zakres temperatury skladowania Ifm Ptot h , ; tamb = 298 K (25°C) typ. maks. 1 1,2 V Napiçcie przewodzenia przy If = 100 mA Uy dia


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PDF BZP630-C, BZP630-D BZP630-C BZP630-D Uz-10Â BZPS30-D BZP630-C BZP630-C12 BZP630-C8V2 C9VI BZP630C7V5 BZP630-D8V2 BZP630-C20 BZP630-C10 BZP630C15 bzp630-c6v8 BZP630-C16
4.3uH inductor power

Abstract:
Text: 3.60 2.98 3.61 4.50 5.52 20MHz BW In 0.012 1.20 0.98 0.79 0.65 Vout 0.899 0.906 0.897 0.897 0.896 50mVpp Iout 0 3 3 3 3 0.760 0.761 0.757 0.749 3.60 2.98 3.30


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PDF MAX8546 680uF FDV0630 20MHz 50mVpp LMK212BJ225MG 680uF 10MV680AX 4.3uH inductor power FDS8926A FDV0630 FDV0630-4R3 JMK325BJ226MM LMK212BJ225MG MAX8546 MAX8546EUB
marking code s46

Abstract:
Text: 2.40 6800 0.085 2.28 3900 0.085 2.25 22×45 S26 18000 0.046 2.98 , 2.56 1200 0.207 2.42 35×45 S56 1800 0.138 2.98 1800 0.138 2.67 1500


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PDF 2000hours 120Hz) 120Hz 2010/2011E marking code s46 marking S45 marking s47 C5101 code marking s47 marking code s34 marking s34 S45 marking S53 MARKING
1999 - IL-74

Abstract:
Text: Case for 10 Sec. IAR Amps 298 5.0 Operating and Storage Junction Temperature Range TL , width limited by maximum junction UNIT 880 EL Characteristic PR Symbol MAX 298


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PDF APT50M50PVR IL-74
7 segment decoder TTL

Abstract:
Text: Voltage TTL NTE2016, NTE2017, 18-Lead DIP, See Diag. 298 NTE2018, NTE2019, NTE2020 8-Channel Darlington , for 5V TTL/CMOS for 6V to 15V CMOS/PMOS for High Voltage TTL NTE2021, 18-Lead DIP, See Diag. 298 , Output g B Output a Q Output b Q Output c B Output d J Output e NTE2030 18-Lead DIP, See Diag. 298 8


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PDF NTE2011, NTE2012, 16-Lead NTE2013, NTE2014, NTE2015 NTE2011 NTE2012: NTE2013: NTE2014: 7 segment decoder TTL NTE2014 7 segment common anode decoder 7 Segment Display GL NTE2019 quad 7 segment led display common anode 7-segment display driver 8-channel darlington array NTE2013 bcd to 7 segment display for common cathode
Supplyframe Tracking Pixel