2008 - FDPF3860T
Abstract: No abstract text available
Text: , RGEN = 6 (Note 4, 5) VDS = 80V, ID = 5.9A VGS = 10V (Note 4, 5) Drain-Source Diode , Description · RDS(on) = 38.2m ( MAX ) @ VGS = 10V, ID = 5.9A This N-Channel MOSFET is produced using , 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 3.4 mJ dv/dt Peak Diode , www.fairchildsemi.com FDPF3860T N-Channel PowerTrench® MOSFET March 2008 Device Marking FDPF3860T Device , 250µA Static Drain to Source On Resistance VGS = 10V, ID = 5.9A gFS Forward Transconductance
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FDPF3860T
O-220F
FDPF3860T
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2008 - S4056
Abstract: fdpf3860t
Text: Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) - , PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDPF3860T Device FDPF3860T , Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 5.9A VDS = 10V, ID = 5.9A 2.5 29.1 21 4.5 38.2 V m S , 5.9A VGS = 10V VDD = 50V, ID = 5.9A VGS = 10V, RGEN = 6 (Note 4) (Note 4) 15 17 24 7 23 7 8 40 45 60 25 35 - ns ns ns ns nC nC nC - Drain-Source Diode Characteristics IS ISM VSD trr
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FDPF3860T
FDPF3860T
S4056
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2008 - Not Available
Abstract: No abstract text available
Text: , ID = 5.9A VGS = 10V (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous , EAR Repetitive Avalanche Energy (Note 1) 3.4 mJ dv/dt Peak Diode Recovery dv/dt , PowerTrench® MOSFET April 2013 Device Marking FDPF3860T Device FDPF3860T Package TO , = 250μA 2.5 - 4.5 V Static Drain to Source On Resistance VGS = 10V, ID = 5.9A - 29.1 38.2 mΩ gFS Forward Transconductance VDS = 10V, ID = 5.9A - 21 -
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FDPF3860T
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2008 - Not Available
Abstract: No abstract text available
Text: Drain to Source Diode Forward Voltage VGS = 0V, ISD = 5.9A - - 1.3 V trr Reverse , General Description ⢠R DS(on) = 38.2m⦠( MAX ) @ VGS = 10V, ID = 5.9A ⢠Fast switching , Avalanche Energy (Note 1) 3.4 mJ dv/dt Peak Diode Recovery dv/dt 15 V/ns - Pulsed , www.fairchildsemi.com FDPF3860T N-Channel PowerTrench® MOSFET March 2008 Device Marking FDPF3860T Device , VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 5.9A gFS
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FDPF3860T
O-220F
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2008 - fdpf3860t
Abstract: No abstract text available
Text: , ID = 5.9A VGS = 10V (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous , EAR Repetitive Avalanche Energy (Note 1) 3.4 mJ dv/dt Peak Diode Recovery dv/dt , PowerTrench® MOSFET July 2013 Device Marking FDPF3860T Device FDPF3860T Package TO-220F Reel , = 250μA 2.5 - 4.5 V Static Drain to Source On Resistance VGS = 10V, ID = 5.9A - 29.1 38.2 mΩ gFS Forward Transconductance VDS = 10V, ID = 5.9A - 21 -
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FDPF3860T
O-220F
fdpf3860t
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2008 - Not Available
Abstract: No abstract text available
Text: ) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A ⢠This N-Channel MOSFET is produced using Fairchild , www.fairchildsemi.com FDP3205 N-Channel PowerTrench® MOSFET May 2008 Device Marking FDP3205 Device , Voltage Static Drain to Source On Resistance 3.5 - 5.5 VGS = 10V, ID = 59A VGS(th) - 6.1 7.5 VGS = 10V, ID = 59A TJ = 175oC - 12 - VDS = 25V, VGS = 0V f = 1MHz - , Threshold to Plateau Qgd Gate to Drain âMillerâ Charge VDS = 44V ID = 59A Ig = 1mA 9.5
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FDP3205
O-220
FDP3205
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2005 - mosfet equivalent fda 59 n 30
Abstract: FDA59N30
Text: Current - - 236 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 59A - , TM FDA59N30 300V N-Channel MOSFET Features Description · 59A , 300V, RDS(on) = 0.056 @VGS , Avalanche Energy (Note 1) 50 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns , 300V N-Channel MOSFET UniFET Device Marking Device Package Reel Size Tape Width , Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 150V, ID = 59A RG = 25
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FDA59N30
FDA59N30
mosfet equivalent fda 59 n 30
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2005 - FDA59N25
Abstract: mosfet equivalent fda 59 n 30 mosfet fda 59 n 30
Text: Drain-Source Diode Forward Voltage VGS = 0V, IS = 59A - - 1.4 V trr Reverse Recovery , N-Channel MOSFET Features Description · 59A , 250V, RDS(on) = 0.049 @VGS = 10 V These N-Channel , ) EAR Repetitive Avalanche Energy (Note 1) 39.2 mJ dv/dt Peak Diode Recovery dv/dt , °C/W www.fairchildsemi.com FDA59N25 250V N-Channel MOSFET September 2005 Device Marking , Qgs Gate-Source Charge Qgd VDD = 125V, ID = 59A RG = 25 -(Note 4, 5) VDS = 200V, ID =
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FDA59N25
FDA59N25
mosfet equivalent fda 59 n 30
mosfet fda 59 n 30
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2013 - Mosfet
Abstract: SSF3626
Text: product â Surface Mount Package Marking and Pin Assignment APPLICATIONS âPWM applications âLoad switch âPower management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF3626 SSF3626 SOP , © VGS=10V, ID= 5.9A 25 35 mΩ VDS=10V,ID= 5.9A 5 S 550 g FS 41 PF 100 , Charge Qgd 1.7 nC Body Diode Reverse Recovery Time T rr 20 nS Body Diode Reverse
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SSF3626
SSF3626
330mm
Mosfet
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IRFI630G
Abstract: 59-A
Text: ⢠Low Thermal Resistance Vdss = 200V RDS(on) = 0.40£2 lD = 5.9A Description Third Generation , Peak Diode Recovery dv/dt ® 5.0 V/ns Tj Operating Junction and -55 to+150 Tstg Storage Temperature , Charge â â 43 nC Id= 5.9A Vds=160V Vgs=10V See Fig. 6 and 13 © Qgs Gate-to-Source Charge â â 7.0 Qgd Gate-to-Draln ("Miller") Charge â â 23 td(on) Turn-On Delay Time â 9.4 â ns Vdd=100V Id= 5.9A , Current (Body Diode ) - - 5.9 A MOSFET symbol showing the A I T\ integral reverse GAJ j_Lj/ p-n junction
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IRFI630G
O-220
IRFI630G
59-A
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2008 - Not Available
Abstract: No abstract text available
Text: , ID = 5.9A 7.1 nC 6.3 nC Drain-Source Diode Characteristics VSD Source to Drain , Ì Max rDS(on) = 36m⦠at VGS = 10V, ID = 5.9A Ì 100% UIL tested This N-Channel MOSFET is , , Junction to Ambient 1.8 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD3860 ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 Device FDD3860 , Transconductance 3.8 -11.4 mV/° C VGS = 10V, ID = 5.9A 29 36 VGS = 10V, ID = 5.9A , TJ = 125Â
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FDD3860
-PA52
FDD3860
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2005 - FDA59N30
Abstract: No abstract text available
Text: Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = , FDA59N30 Rev. C0 FDA59N30 N-Channel UniFETTM MOSFET Package Marking and Ordering Information Device Marking FDA59N30 Device FDA59N30 Package TO-3PN TC = 25°C unless otherwise noted Reel Size - , Characteristics VDD = 150V, ID = 59A RG = 25 (Note 4) -(Note 4) VDS = 240V, ID = 59A VGS = 10V - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current
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FDA59N30
FDA59N30
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2005 - fda59n25
Abstract: No abstract text available
Text: Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , Marking and Ordering Information Device Marking FDA59N25 Device FDA59N25 Package TO-3PN Reel , Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 200V, ID = 59A VGS = 10V (Note 4, 5) (Note 4, 5) VDD = 125V, ID = 59A RG = 25 - 70 480 90 170 63 18.5 30 150 970 190 350 82 - ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS
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FDA59N25
FDA59N25
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DIODE S4 59A
Abstract: diode t25 4 G6 diode t25 4 G5
Text: APTC90TDUM60TPG Triple dual Common Source Super Junction MOSFET Power Module VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application ⢠Welding converters ⢠Switched , D1 NTC1 NTC2 G1 S1/S2 S1 D5 G3 S3/ S4 S3 G5 S5/S6 S5 S2 D2 S4 , 4.2 mJ 1.7 Source - Drain diode ratings and characteristics Reverse Recovery Time Qrr , â Rev 0 Symbol Characteristic Continuous Source current IS (Body diode ) VSD Diode Forward
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APTC90TDUM60TPG
DIODE S4 59A
diode t25 4 G6
diode t25 4 G5
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IRF1630
Abstract: irf1630g IRF163 1RF16 59-A IRFI630G 9652A
Text: Source Current (Body Diode ) © - â 24 Vsd Diode Forward Voltage â â 2.0 V Tj=25°C, !s= 5.9A , using a single clip or by a single screw fixing. Vdss=200V RDS(on) = 0-40Q lD = 5.9A Absolute Maximum , Diode Recovery dv/dt ® 5.0 V/ns Tj Operating Junction and -55 to+150 Tstg Storage Temperature Range , =20V Gate-to-Source Reverse Leakage â â -100 Vqs=-20V Qg Total Gate Charge â â 43 nC Id= 5.9A Vds=160V VGs , 23 td(on) Turn-On Delay Time â 9.4 â ns Vdd=100V Id= 5.9A Rg=12£2 Rd=1 en See Figure 10 © tr
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IRFI630G
RF1630G
IRF1630
irf1630g
IRF163
1RF16
59-A
9652A
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IRFP064N
Abstract: c379 irf3205 Mosfet IRFP064N
Text: Energy © Peak Diode Recovery dv/dt ®® Operating Junction and Storage Temperature Range Soldering , 10V, Ip = 59A © V ds = V qs, Id = 250|jA VDs = 25V, lD = 59A VDS = 55V, VGs = 0V V ds = 44V, VGS = 0V, T j = 1SOX V gs = 20V VGS = -20V lD = 59A VDS = 44V V qs = 10V, see figure 6 and 13 ®® V dd = 28V lD = 59A Rq = 2.5Q Rd = 0.39Q, see figure 10 ®® Between lead, 6mm (0.25in.) from package and center of , 170 680 V ns nC showing the Conditions MOSFET symbol integral reverse p-n junction diode . Tj =
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IRFP064N
O-247
C-378
C-379
IRFP064N
c379
irf3205
Mosfet IRFP064N
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1996 - IRF3205
Abstract: irf3205 DRIVER IRF3205 IR ultra low power mosfet fast switching IRF1010
Text: symbol showing the integral reverse p-n junction diode . TJ = 25°C, IS = 59A , VGS = 0V TJ = 25°C, IF , Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering , 250µA V/°C Reference to 25°C, I D = 1mA 0.008 VGS = 10V, ID = 59A 4.0 V VDS = VGS, ID = 250µA S VDS = 25V, ID = 59A 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 170 ID = 59A 32 nC VDS = 44V 74 VGS = 10V, See Fig. 6 and
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1279C
IRF3205
O-220
IRF3205
irf3205 DRIVER
IRF3205 IR
ultra low power mosfet fast switching
IRF1010
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2009 - S4 59A
Abstract: SP6-P DIODE S4 59A DIODE S4 52a S4 52A APT0406 APT0502 MAX5944 s4 52a diode
Text: APTC90TDUM60TPG Triple dual Common Source Super Junction MOSFET Power Module VDSS = 900V RDSon = 60m max @ Tj = 25°C ID = 59A @ Tc = 25°C Application · Welding converters · Switched Mode , G1 S1/S2 S1 D5 G3 S3/ S4 S3 G5 S5/S6 S5 S2 D2 S4 S6 G2 G4 G6 , 3.8 mJ 1.5 4.2 mJ 1.7 Source - Drain diode ratings and characteristics Reverse , APTC90TDUM60TPG Rev 0 Symbol Characteristic Continuous Source current IS (Body diode ) VSD Diode Forward
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APTC90TDUM60TPG
S4 59A
SP6-P
DIODE S4 59A
DIODE S4 52a
S4 52A
APT0406
APT0502
MAX5944
s4 52a diode
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2008 - FDP3205
Abstract: No abstract text available
Text: Turn-Off Time - 60 130 ns VDD = 28V, ID = 59A VGS = 10V, RGEN = 2.5 Drain-Source Diode Characteristics VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 59A - - 1.3 V trr , 6.1m ( Typ.)@ VGS = 10V, ID = 59A · This N-Channel MOSFET is produced using Fairchild Semiconductor , FDP3205 N-Channel PowerTrench® MOSFET May 2008 Device Marking FDP3205 Device FDP3205 , Drain to Source On Resistance 3.5 - 5.5 VGS = 10V, ID = 59A VGS(th) - 6.1 7.5
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FDP3205
O-220
FDP3205
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2008 - FDD3860
Abstract: 125C51
Text: Max rDS(on) = 36m at VGS = 10V, ID = 5.9A 100% UIL tested This N-Channel MOSFET is rugged gate , RJA Thermal Resistance, Junction to Ambient 1.8 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD3860 ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 , Transconductance 3.8 -11.4 mV/°C VGS = 10V, ID = 5.9A 29 36 VGS = 10V, ID = 5.9A , TJ = 125°C 51 64 VDS = 10V, ID = 5.9A 20 m S Dynamic Characteristics Ciss Input Capacitance
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FDD3860
-PA52
FDD3860
125C51
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Not Available
Abstract: No abstract text available
Text: Low Therm al Resistance bS E D VDSS = 200V ^D S (o n ) = 0 - 4 0 Q lD = 5.9A Description , © Peak Diode Recovery dv/dt ® Operating Junction and Storage Temperature Range Soldering Temperature , © s Vds=200V, Vqs=0V Vds=160V, Vqs=0V, Tj=125°C VG =20V s Vgs=-20V Id= 5.9A Vds=160V Vgs=10V See Fig. 6 and 13 © Vqd=100V Id= 5.9A Rg=12£2 Rd=16£2 See Figure 10© Between lead, P 6 mm , Parameter Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) © Diode Forward
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465545E
DD151E4
IRFI630G
O-220
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IRF3205 equivalent
Abstract: IRF3205 IRF3205 TO-220 irf3205 mosfet irf3205 data Mosfet IRF3205 diode IN 34A
Text: Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering , S VDS = 25V, ID = 59A 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 170 ID = 59A 32 nC VDS = 44V 74 VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 59A ns RG = 2.5 RD = 0.39, See Fig. 10 Between lead, 6mm (0.25in.) nH , Parameter Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward
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IRFI3205PbF
O-220
IRF3205
IRF3205 equivalent
IRF3205 TO-220
irf3205 mosfet
irf3205 data
Mosfet IRF3205
diode IN 34A
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2005 - FDA59N25
Abstract: n-channel 250V power mosfet
Text: Drain-Source Diode Forward Voltage VGS = 0V, IS = 59A - - 1.4 V trr Reverse Recovery , N-Channel MOSFET Features Description · 59A , 250V, RDS(on) = 0.049 @VGS = 10 V These N-Channel , EAR Repetitive Avalanche Energy (Note 1) 39.2 mJ dv/dt Peak Diode Recovery dv/dt , °C/W www.fairchildsemi.com FDA59N25 250V N-Channel MOSFET September 2005 Device Marking , Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125V, ID = 59A RG = 25 -(Note 4, 5
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FDA59N25
FDA59N25
n-channel 250V power mosfet
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IRF3205
Abstract: irf3205 mosfets
Text: integral reverse Î 390 - - S p-n junction diode . - - V 1.3 T j = 25°C, ls = 59A , VGS = 0V ® T j = 25 , © Repetitive Avalanche Energy © Peak Diode Recovery dv/dt ® Operating Junction and Storage Temperature Range , = 10V, lD = 59A ® V ds = V g s , I d = 250pA Vos = 25V, lD = 59A Vos = 55V, VGS = 0V V ds * 44V, VGa = 0V, T j = 150°C VGS = 20V Vqs = -20V lD = 59A VDS = 44V Vqs = 10V, see figure 6 and 13 ® VDD = 28V l0 = 59A R g = 2.5S.2 R d = 0.39£1, see figure 10 © Between lead, 6mm (0.25in.) from package and
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1279D
IRF3205
O-220
IRF3205
irf3205 mosfets
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1997 - IRF3205 equivalent
Abstract: IRF3205 application datasheet for IRF3205 IRF3205 ups IRF3205 irf3205 DRIVER irf3205 mosfet transistor marking F53 AN-994 IRF3205L
Text: 390 S p-n junction diode . 1.3 V TJ = 25°C, IS = 59A , VGS = 0V 110 170 ns , Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating , , ID = 59A 4.0 V VDS = VGS, ID = 250µA S V DS = 25V, I D = 59A 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 150°C 100 V GS = 20V nA -100 VGS = -20V 170 I D = 59A 32 nC VDS = 44V 74 VGS = 10V, See Fig. 6 and 13 VDD = 28V I D = 59A ns R G = 2.5
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1304B
IRF3205S/L
IRF32305S)
IRF3205L)
IRF3205 equivalent
IRF3205 application
datasheet for IRF3205
IRF3205 ups
IRF3205
irf3205 DRIVER
irf3205 mosfet transistor
marking F53
AN-994
IRF3205L
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