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Part Manufacturer Description Datasheet Download Buy Part
LT1336IS#TR Linear Technology LT1336 - Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C
LT1336CS#PBF Linear Technology LT1336 - Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LT1336CS#TRPBF Linear Technology LT1336 - Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LT1158CN#PBF Linear Technology LT1158 - Half Bridge N-Channel Power MOSFET Driver; Package: PDIP; Pins: 16; Temperature Range: 0°C to 70°C
LT1336IS#PBF Linear Technology LT1336 - Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C
LT1158CSW#PBF Linear Technology LT1158 - Half Bridge N-Channel Power MOSFET Driver; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C

DIODE bridge 255 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Eupec bsm 25 gb 120

Abstract: HIGH VOLTAGE THYRISTOR DISC THYRISTOR Thyristor PIN CONFIGURATION EUPEC Thyristor diode 1481 452 diode Transistor D 798 600V 100 A THYRISTOR igbt power module EUPEC FS 20 R 06
Text: phase bridge Chopper config. Dual Diode (for circuit see outline) Max. DC-collector current (A , switch / diode B = Halfbridge D = 3-phase full bridge T = Tripack (3 single switches) P = Power , . power the Home Products Diode News Contact Editorials Job Offers VRRM , . represent the current rating [A] . . . . . . . . . . . V RRM max. 800 V D 255 N D 255 K , ) Pellet: 65 DN 06 (IFAVM = 8470A, 600V) Diode Pellets click on part-no. to select datasheet - click


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3TF44

Abstract: 3TF52 3tf42 3TF4222 3TF46 3TF4422 simoreg 6ra24 3TF4222-0A 3TF4822 3TF5222-0AK6
Text: 123 175 255 510 A1-116-110-503 A1-116-110-504 A1-116-110-505 A1-116-110-506 A1 , (MLFB) 4Q PART NUMBER 4Q TYPE (MLFB) 15 30 60 90 123 175 255 510 850 (60" Panel , requirements. RATING (Amps DC) 15 30 60 90 123 175 255 1Q PART NUMBER A1-116-111-503 A1 , amp 15 to 850 amp 15 to 255 amp 15 to 123 amp 15 to 510 amp 15 amp 30 amp 60 to 123 amp 175 & 255 amp 510 amp 850 amp All All A1-116-101-801 A1-116-100-817 A1-116-100-801 A1


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PDF A1-116-110-503 A1-116-110-504 A1-116-110-505 A1-116-110-506 A1-116-110-508 A1-116-110-509 A1-116-110-511 A1-116-110-513 6RA2413-1FS22 6RA2418-1FS22 3TF44 3TF52 3tf42 3TF4222 3TF46 3TF4422 simoreg 6ra24 3TF4222-0A 3TF4822 3TF5222-0AK6
Not Available

Abstract: No abstract text available
Text: SEMiX 201GD066HDs power semiconductor power electronics igbt bridge rectifier diode thyristor , electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module , (. ) 4 Units 6 6 6 > SEMiX®13s Trench IGBT Modules SEMiX 201GD066HDs Inverse Diode , &(.) .2C .27( '27 82: &28( &25 &'2: . 255 .2:5 &4. :. $ '.6 - &(. ) &7. ( ( (. ( 7 .2'' , SEMIKRON brückengleichrichter leistungselektronik Characteristics Symbol Conditions Inverse Diode ?


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PDF 201GD066HDs
1996 - THYRISTOR MODULE MCC 25

Abstract: 2x450 DIODE bridge 255
Text: Thyristor Modules Thyristor/ Diode Modules MCC 255 ITRMS = 2 x 450 A MCD 255 ITAVM = 2 x 250 A , (per thyristor or diode ) Fig. 6 Three phase rectifier bridge : Power dissipation versus direct , 3600 V~ V~ Weight tP = 30 µs tP = 500 µs t = 1 min t=1s 1 5 4 2 MCD 255 , thyristor/ diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions 52 3 q 1000 50/60 Hz, RMS IISOL 1 mA MCC 255 q TVJ = TVJM; VDR = 2/3


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PDF 255-12io1 255-14io1 255-16io1 255-18io1 THYRISTOR MODULE MCC 25 2x450 DIODE bridge 255
GI 312 diode

Abstract: bridge RECTIFIER GI IGBT 50 amp 1000 volt vqe 23 MHPM7B16A120B MHPM7A15S120DC3 5SC3 2a1012
Text: ) (This device is replaced by MHPM7A15S120DC3) This module integrates a 3-phase input rectifier bridge , 3-phase output inverter and brake transistor/ diode in a single convenient package. The output inverter utilizes , noted) Rating Symbol Value Unit INPUT RECTIFIER BRIDGE Peak Repetitive Reverse Voltage (Tj = 125 , Continuous Free-Wheeling Diode Current 'Fmax 16 A Peak Repetitive Free-Wheeling Diode Current(2) lF(pk) 32 A IGBT Power Dissipation per die (Tq = 95°C) Pd 75 W Free-Wheeling Diode Power Dissipation per die (Tq


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PDF MHPM7B16A120B/D MHPM7A15S120DC3) D10D313 GI 312 diode bridge RECTIFIER GI IGBT 50 amp 1000 volt vqe 23 MHPM7B16A120B MHPM7A15S120DC3 5SC3 2a1012
20201

Abstract: 7x7x1 7x7x1.4 30-BRIDGE
Text: Silicon Power Rectifier Assemblies Plate Heatsink • Complete bridge with heatsinks -no , 34 20 B B Peak Number of Size of Type of Reverse Type of Diodes Type of Type of Heat Sink Diode , Per leg H—Half Wave C-Center Tap Positive N-Center Tap Negative D-Doubler B-Bridge M-Open Bridge , Negative W-Double WYE V-0pen Bridge _ COLORADO U Microsemi 800 Hoyt Street Broom field, CO. 80020 , . Inches Millimeters Min. Max. Min. Max. 1« Bridge 2x2 K 5.00 5.25 127.0 133.3 10 Bridge 3x3 K


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ZLDQ250A

Abstract: pwm INVERTER welder ZQ25A zldq150a st600c ZQ50A diode m3 ZQ35A 3phase bridge diode mds 60 SKE200A
Text: Conact Local Distributor Soild State Relay&press-fit Diode Bridge Rectifier Semiconductor , 4000m2,building area 2500m2. Major product: Diode , Thyristor, Bridge Rectifier, Power Modules, Solid , version-11 Non-Insulation type modules-12 1-phase & 3-phase bridge diode , 255 136.0 200~1600 12 0.4 -40 ~ +125 BRIDGE RECTIFIER STUD VERSION , RELAY & PRESS-FIT DIODE E-PUK(E2) E8 BRIDGE RECTIFIER A-PUK(E1) POWER MODULES I 2t


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PDF pinwei0225 ZLDQ250A pwm INVERTER welder ZQ25A zldq150a st600c ZQ50A diode m3 ZQ35A 3phase bridge diode mds 60 SKE200A
7x7x1

Abstract: 7x7x1.4
Text: Silicon Power Rectifier Assemblies Plate Heatsirik • Complete bridge with heatsinks -no , 34 20 B B Peak Size of Type of Reverse Type of Heat Sink Diode Voltage Circuit Number of Diodes , Bridge brackets or insulating board with mounting bracket -Stud with no bracket Surge Suppressor , Wave DC Negative W-Double WYE V-Open Bridge mmm LAWRENCE a 6 Lake Street .1 |l üiVffJftif^A^MA , 34 Sc 37 Circuit Size Dim. Inches MRIimeters Min. Max. Win. Max. 1» Bridge 2x2 K 5.0Q 5.25


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2003 - ir igbt 1200V 10A

Abstract: APTGS10X120BTP2 APTGS10X120RTP2
Text: APTGS10X120RTP2 APTGS10X120BTP2 Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power , - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - , Diode rectifier Absolute maximum ratings July, 2003 All ratings @ Tj = 25°C unless otherwise specified APTGS10X120RTP2 APTGS10X120BTP2 IGBT & Diode Brake (only for APTGS10X120BTP2) Absolute , Maximum Power Dissipation DC Forward Current IGBT & Diode Inverter Symbol VCES IC ICM VGE PD


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PDF APTGS10X120RTP2 APTGS10X120BTP2 APTGS10X120RTP2: ir igbt 1200V 10A APTGS10X120BTP2 APTGS10X120RTP2
2006 - Not Available

Abstract: No abstract text available
Text: SKET 330 power semiconductor power electronics igbt bridge rectifier diode thyristor cib , NOS © by SEMIKRON SKET 330 power semiconductor power electronics igbt bridge rectifier diode , :$ 255 22% I =2 J 5#2 I =2 J 5#2 #"22 < #222 $ M 5$ N5* 58 M 5$ N%* $ A :65 :=2 3 #" Units 3 3 3 , 09-02-2004 NOS © by SEMIKRON SKET 330 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter


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E2753A

Abstract: 2KBP02 Single Phase 2.0 A Bridge Rectifier International rectifier 1A rectifier 2kbp 2KBP10 2KBP08 2KBP06 2KBP04 2KBP005
Text: Bulletin E2753A INTERNATIONAL RECTIFI IOR 2KBP SERIES SA single phase rectifier bridge Description A 2A single phase encapsulated bridge rectifier consisting of four single diodes connected as a full bridge . They are intended for general applications in industrial and consumer equipment. Features , Tj = Tj max 23 A2s t = 8 3ms No voltage reaPP1|ed \2\Jx Maximum l2\/t capability for fusing 255 A2/S t = 0.1 to 10ms, no voltage reapplied Vp|y Maximum peak forward voltage per diode 1.0 V 'FM = 1A


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PDF E2753A 2KBP005 2KBP02 2KBP04 2KBP06 2KBP08 2KBP10 E2753A Single Phase 2.0 A Bridge Rectifier International rectifier 1A rectifier 2kbp
2001 - APT5012

Abstract: No abstract text available
Text: intrinsic diode is expected to carry forward current - Half Bridge , Full Bridge , 3-Phase Bridge topologies , ® MOSFET with a faster recovery intrinsic body diode . Faster reverse recovery (250ns) - Eliminates the need for external FRED or Schottky rectifiers Improved ruggedness of intrinsic diode - Commutative dv , 18.5 28.0 22.0 50.0 9.0 11.5 17.5 16.0 21.0 18.5 14.7 25.5 33.0 17.3 31.5 40.0 44.0 65.0 33.0 60.5 74.5


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PDF APT5019HVR APT5026HVR APT4014HVR APT4018HVR O-258 APT20M42HVR APT1001R1AVR APT6032AVR APT6035AVR APT5012
in1004

Abstract: in1004 diode diodes IN4001 IC LM7805 OF BLOCK diagram IC LM7805 IN4001 diode LM7805 TO92 IN4001 5V power supply using LM7805 and bridge rectifier diode IN4001
Text: supply supplies power to the charger and uses a transformer, bridge rectifier, filter capacitors and , are four IN1004 diodes which together form a rectifier bridge , and convert AC voltage to DC voltage , value range is from 0 to 255 , Count No = 256-TMR0 TMR1A[7:0] = TMR1 first count register preload value Valid value range is from 0 to 255 , Count No = 256-TMR1A TMR1B[7:0]= TMR1 second count register preload value Valid value range is from 0 to 255 , Count No = 256-TMR1B 5 0H 50H 0H Using the


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PDF HT13R90 HA0148E 40-bit 32768Hz HT13R90 in1004 in1004 diode diodes IN4001 IC LM7805 OF BLOCK diagram IC LM7805 IN4001 diode LM7805 TO92 IN4001 5V power supply using LM7805 and bridge rectifier diode IN4001
2000 - ZY180L

Abstract: diode b6 k 450 25518I ixys mcc 255
Text: MCC 255 MCD 255 Thyristor Modules Thyristor/ Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 , / diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-4 MCC 255 MCD 255 Symbol Test Conditions Characteristic , 10 Fig. 1 Gate trigger characteristics per thyristor ( diode ); DC current per module per thyristor ( diode ); DC current per module other values see Fig. 8/9 Creeping distance on surface


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PDF 255-12io1 255-14io1 255-16io1 255-18io1 ZY180L diode b6 k 450 25518I ixys mcc 255
2006 - DIODE bridge 255

Abstract: No abstract text available
Text: 6-800V 7-1000V PACKAGING OF DIODE AND BRIDGE RECTIFIERS TUBE PACK PACKAGE PACKING CODE , DB151LS THRU DB157LS SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 , : 1.0 gram DB-LS .310 (7.9) .290 (7.4) MECHANICAL DATA . 255 (6.5) .245 (6.2) * Epoxy , ) .360 (9.4) .042 (1.1) .038 (1.0) .060 (1.524) .040 (1.016) .346 (8.8) 0.100 ( 2.55 ) .307 , Voltage VRRM 50 Maximum RMS Bridge Input Voltage VRMS Maximum DC Blocking Voltage VDC


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PDF DB151LS DB157LS DIODE bridge 255
1999 - diode b6 k 450

Abstract: No abstract text available
Text: MCC 255 MCD 255 Thyristor Modules Thyristor/ Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 , / diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 1999 IXYS All rights reserved 1-4 MCC 255 MCD 255 Symbol Test Conditions Characteristic , . 1 Gate trigger characteristics per thyristor ( diode ); DC current per module per thyristor ( diode ); DC current per module other values see Fig. 8/9 Creeping distance on surface Creepage


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PDF 255-12io1 255-14io1 255-16io1 255-18io1 diode b6 k 450
free transistor book A.Z

Abstract: 552 transistor motorola BTS 716 G MHPM7A5S120DC3 MHPM7B8A120A Motorola T 552
Text: DEVICE INTEGRATION 3-Phase Input Rectifier Bridge Brake IGBT/ Diode 3-Phase Output IGBT/Dlode Bridge , ) (This device is replaced by MHPM7A5S120DC3) This module integrates a 3-phase input rectifier bridge , 3-phase output inverter and brake transistor/ diode in a single convenient package. The output inverter utilizes , noted) Rating Symbol Value Unit INPUT RECTIFIER BRIDGE Peak Repetitive Reverse Voltage (tj = 125Â , Continuous Free-Wheeling Diode Current 'Fmax 8.0 A Peak Repetitive Free-Wheeling Diode Currenti2) 'F(pk) 16


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PDF MHPM7B8A120A/D MHPM7A5S120DC3) free transistor book A.Z 552 transistor motorola BTS 716 G MHPM7A5S120DC3 MHPM7B8A120A Motorola T 552
2006 - DB103LS

Abstract: No abstract text available
Text: 6-800V 7-1000V PACKAGING OF DIODE AND BRIDGE RECTIFIERS TUBE PACK PACKAGE PACKING CODE , DB101LS THRU DB107LS SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 , : 0.335 gram DB-LS .310 (7.9) .290 (7.4) MECHANICAL DATA . 255 (6.5) .245 (6.2) * Epoxy , ) .360 (9.4) .042 (1.1) .038 (1.0) .060 (1.524) .040 (1.016) .346 (8.8) 0.100 ( 2.55 ) .307 , Voltage VRRM 50 Maximum RMS Bridge Input Voltage VRMS Maximum DC Blocking Voltage VDC


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PDF DB101LS DB107LS DB103LS
2000 - Not Available

Abstract: No abstract text available
Text: MCC 255 MCD 255 Thyristor Modules Thyristor/ Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 , /97-115 Nm/lb.in. 750 g q q Data according to IEC 60747 and refer to a single thyristor/ diode , © 2000 IXYS All rights reserved 1-4 MCC 255 MCD 255 Symbol Test Conditions Characteristic , tgd RthJC 10 Fig. 1 Gate trigger characteristics per thyristor ( diode ); DC current per module per thyristor ( diode ); DC current per module other values see Fig. 8/9 Creeping distance


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PDF 255-12io1 255-14io1 255-16io1 255-18io1
1997 - Not Available

Abstract: No abstract text available
Text: Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C IFSM I2t ( Diode ) tp = 10 , . Units ­ V ­ mA ­ mA ­ V ­ V ­ nF ­ nH ­ ns ­ µs ­ ns ­ µs ­ µs ­ ns ­ mJ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ 120 ­ 255 , intelligent Power PACK 3-phase bridge with brake chopper SKiiP 232 GDL 120 +Driver 410 CTV(E/A)7,13 , Eoff VCC = 600 V / 900 V ­ Inverse Diode 2) - inverter VF = VEC IF = 150 A Tj = 25 (125) °C ­ ­ IF


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1998 - fet diode date sheet

Abstract: PS7841-A15 PS7841-A15-F3 data transistor darlington for High Power Audio
Text: diode bridge , MOS FET, photocoupler, Darlington transistor and LED. This device is suitable for analog , . FEATURES · For optical DAA circuit · OCMOS FET · Photocoupler (AC input response) · Diode bridge · Darlington transistor · Small and thin package (16-pin SOP: 255 mil, Pin pitch = 1.27 mm, Height = 2.1 mm , *1 Collector to Emitter Voltage Diode Bridge Forward Current IF 140 mA (Pin No , DIODE BRIDGE (Pin No. 10, 11, 12, 15) Parameter Symbol Conditions TYP. MAX. Unit 0.9


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PDF PS7841-A15 16-PIN PS7841-A15 PS7841-A15-F3, fet diode date sheet PS7841-A15-F3 data transistor darlington for High Power Audio
2009 - Not Available

Abstract: No abstract text available
Text: SKET 330 THYRISTOR BRIDGE ,SCR, BRIDGE -.,/ :22 5#22 5$22 5822 5:22 %522 %#22 -./ -&./ 622 5%22 5=22 5"22 5622 %222 %%22 0./, 1 "22 3 )4 + * 03- 1 ##2 3 ) 5627 1 86 9'* ,;! ##2<26! ,;! , < %222 # %22 4 2%$ 4 52 22: 22:$ 255 22% I =2 J 5#2 I =2 J 5#2 #"22 < #222 $ M 5$ N5* 58 M 5$ N%* $ , 4 SKET 1 16-02-2009 MAY © by SEMIKRON RECTIFIER, DIODE ,THYRISTOR,MODULE Fig. 1L , MAY © by SEMIKRON SKET 330 THYRISTOR BRIDGE ,SCR, BRIDGE Fig. 9 Gate trigger characteristics


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DIODE m2.5a

Abstract: M2.5A FWLC400 FW600
Text: Bridge & Diode Rectifiers Semiconductors Uniform Size Low Cost Low Leakage Low Forward Voltage Drop High Current Capability M a llo r Y Bridge Rectifiers Ideal for printed circuit board Surge , : -55°C to +125°C Storage Tem p. Range: -55°C to +150°C Diode Rectifier Case: Molded plastic Epoxy: UL , grams Bridge Rectifiers R e c l i f ed C u r r e n t (a) H a l f - W a v e R esistive Load 60H ? 1o , .25 (6.4) I .693 Max. I r (17.6) 1 (1 .8 )- .200 H s.d ; 255 (6-5) .767 Max. (195


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PDF 30fiA 1284/Indianapolis 46206-1284/P 273-0090/Fax: DIODE m2.5a M2.5A FWLC400 FW600
LT 0216 diode

Abstract: 20/LT 0216 diode diode bridge LT 405
Text: DIXYS MCC 255 MCD 255 Thyristor Modules Thyristor/ Diode Modules ^TRMS ^TAVM V RRM V , . 750 g D a ta according to D IN /IE C 7 4 7 and refer to a single thyristor/ diode unless otherw ise , ïtite îi V~ 3600 T VJ (di/dt)cr 6 7 1 A2s A2s - T" v JM V R= 0 MCC 255 A , 255-16io1 MCC 255-18io1 MbflbEEb 0 DD3SE7 754 1 5 4 2 MCD 255 Features International , 50 V/|is; V D= 2/3 VD M R Qs lis thyristor ( diode ); DC current module thyristor ( diode ); DC


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PDF 255-12io1 255-14io1 255-16io1 255-18io1 4bflb22h GD03230 LT 0216 diode 20/LT 0216 diode diode bridge LT 405
ATTL7551AP

Abstract: ATTL7582AAE
Text: diode bridge / SCR clamping circuit, current-limiting circuitry and a thermal shutdown mechanism to , Description The ATTL7582gxx version provides only an integrated diode bridge along with current limiting and , device. 4-28 Protection Integrated SLIC Protection Diode Bridge /SCR In the ATTL7582Axx version , break switches, a diode bridge /SCR clamping circuit, and a thermal shutdown mechanism. In the , of current-limited break switches, a diode bridge , and a thermal shutdown mechanism. AT&T


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PDF ATTL7582 ATTL7542 ATTL7551AP ATTL7582AAE
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