The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

DIODE V10-20 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - IPA50R500CE

Abstract: DIODE V10-20 mosfet equivalent IPA50R280CE LLC resonant smps resonant llc full bridge 400W pwm smps schematic SWITCHING bjt 500v IPA50R280C
Text: .13 Hard Commutation on Conducting Body Diode , . 20 3 500V CoolMOSTM CE Application Note AN 2012-04 V1.0 April 2012 1 Introduction TM , benefits FEATURES Reduced energy stored in output capacitance (Eoss) High body diode ruggedness Reduced , . 2.2.2 BJT (Bipolar Junction Transistor)-Effect If the body diode conducts in forward direction, minority carriers remaining in the base region during diode recovery can cause a BJT action with


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PDF ED-29, IPA50R500CE DIODE V10-20 mosfet equivalent IPA50R280CE LLC resonant smps resonant llc full bridge 400W pwm smps schematic SWITCHING bjt 500v IPA50R280C
SOT23-6

Abstract: SSF3420 marking QG SOT23-6 55A SOT23-6
Text: Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 V ID25 6.3 ID70 4.8 IDM 20 A PD 1.6 W TJ,TSTG -55 To 150 RJA 78 /W Drain , (ON) VGS=4.5V, ID=5.5A 26 33 m VGS=10V, ID=6.3A 20 25 m VDS=10V,ID , Charge Qgd 2 nC Body Diode Reverse Recovery Time Trr 18 nS Body Diode Reverse , DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.3A 0.8 1.2 V


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PDF SSF3420 SSF3420 OT23-6 OT23-6 180mm SOT23-6 marking QG SOT23-6 55A SOT23-6
2012 - diode S3A

Abstract: No abstract text available
Text: Standard Recovery Power Diode Features: •  •  •  •  •  •  For , Specifications: Diode Type Diode Configuration Forward Current If(AV) Forward Voltage VF Max. Reverse Recovery Time trr Max Forward Surge Current Ifsm Max Diode Case Style No. of Pins Diode Polarity , inductive load. For capacitive load, derate current by 20 %. Type Number S3A S3D S3G S3J , www.farnell.com www.newark.com Page <1> 05/11/12 V1.0 Standard Recovery Power Diode Type Number


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PDF DO-214AB element14 diode S3A
voltage divider rule

Abstract: DIODE V10-20 7404E-09 8242E optical sensor resistor fix value basic geometrical formulae Analysis on the ADC optical sensor with an amplifier photometrical
Text: .19 5.1.3 Energetische Berechnungen. 20 5.1.4 Electrical Calculations. 20 , .21 Table of figures FIGURE 1: CALCULATION BASICS FROM LUMINANCE TO DIODE CURRENT , .8 FIGURE 3: CALCULATION BASICS FROM ILLUMINANCE TO DIODE CURRENT .9 FIGURE 4: CALCULATION BASICS FROM LUMINOUS INTENSITY TO DIODE CURRENT


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PDF APP-08-243e voltage divider rule DIODE V10-20 7404E-09 8242E optical sensor resistor fix value basic geometrical formulae Analysis on the ADC optical sensor with an amplifier photometrical
SSFK3208

Abstract: GEMPAK5060
Text: Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 V ID(25 , =10V, ID=11A 6.5 9 m VDS=5V,ID=11A 20 S 1200 PF 300 PF ON CHARACTERISTICS , Charge Qgs 3.2 nC Gate-Drain Charge Qgd 3.8 nC Body Diode Reverse Recovery Time Trr 24 nS Body Diode Reverse Recovery Charge Qrr 27 nC VDS=15V,ID=12A,VGS=10V IF=12A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD


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PDF SSFK3208 SSFK3208 GEMPAK5060 GEMPAK5060
SSFK3204

Abstract: GEMPAK5060
Text: Gate-Source Charge Qgs 8 nC Gate-Drain Charge Qgd 15 nC Body Diode Reverse Recovery Time Trr 20 nS Body Diode Reverse Recovery Charge Qrr 5 nC VDS=15V,ID=15A,VGS=10V IF=15A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD , Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 V ID(25 , (nC) Figure 11 Gate Charge ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode


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PDF SSFK3204 SSFK3204 GEMPAK5060 GEMPAK5060
2001 - transistor smd bc rn

Abstract: SMD transistor y11 g21 SMD Transistor SMD Transistor Y12 SMD transistor BC RN transistor ic equivalent book smd y12 Common collector configuration basic applications of ujt optocoupler H11B
Text: primarily designed. A. B. C. D. E. F. G. H. L. N. P. Q. R. S. T. U. X. Y. Z. Diode : signal, low power Diode : variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode : tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode : magnetic sensitive Transistor: power, high frequency Optocoupler , . thyristor) Transistor: power switching Diode : multiplier, e.g. varactor, step recovery Diode : rectifier


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PDF
Not Available

Abstract: No abstract text available
Text: ) 3.5 A ID(70) 2.8 A IDM 20 A PD 2.0 W TJ,TSTG -55 To 150 RJA , Gate-Drain Charge Qgd 3 nC Body Diode Reverse Recovery Time Trr 27 nS Body Diode , DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.7A 1.2 V , Charge ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode Forward 4 http


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PDF SSF6670 SSF6670 330mm 25unless
TSOP-6

Abstract: SSF3428 DIODE 30V TSOP DIODE 30V TSOP-6
Text: nC Gate-Source Charge Qgs 1.8 nC Gate-Drain Charge Qgd 1.5 nC Body Diode Reverse Recovery Time Trr 20 nS Body Diode Reverse Recovery Charge Qrr 12 nC VDS=15V,ID=6A,VGS=10V IF=1.7A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage , 30 V Gate-Source Voltage VGS ± 20 V ID25 6 A ID70 4.8 A IDM 30 , . Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com v1.0 ID- Drain Current (A


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PDF SSF3428 SSF3428 25unless TSOP-6 DIODE 30V TSOP DIODE 30V TSOP-6
2011 - Not Available

Abstract: No abstract text available
Text: Parameter Description Value Unit VDC maximum DC supply voltage ± 20 V IG , a TVS diode connected between the auxiliary collector and the gate of an IGBT module. When the Collector-Emitter voltage exceeds the diode breakdown voltage the diode current sums up with the current from the , -8/+15V operation, the datasheet value of QGE needs to be reduced by 20 %. Due to the PCB temperature , Eoff [mJ] 19.2 23 DUT3 12.2 20 Compared to the datasheet values, the measured Eoff values are


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PDF AN2012-04 MA3L120E07 SP000979670 F3L2020E07-F-P SP001000644 AN2012-03 1ED020I12-F
SOT23-6

Abstract: SSF3416 9A SOT23
Text: Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 V ID25 9 ID70 7 , Qgd 3.8 nC Body Diode Reverse Recovery Time Trr 13 nS Body Diode Reverse Recovery Charge Qrr 7 nC VDS=15V,ID=9A,VGS=10V IF=9A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=3A 0.7 1.2 V NOTES: 1 , ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com


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PDF SSF3416 SSF3416 OT23-6 OT23-6 180mm SOT23-6 9A SOT23
SSF3604

Abstract: No abstract text available
Text: Gate-Source Voltage VGS ± 20 V ID(25) 18.5 A ID(70) 13 A IDM 74 A PD , 12 nC Body Diode Reverse Recovery Time Trr 30 nS Body Diode Reverse Recovery Charge Qrr 25 nC VDS=15V,ID=18.5A,VGS=10V IF=18.5A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=2.1A 0.75 1.2 V NOTES: 1 , ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com


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PDF SSF3604 SSF3604
bss138 MARKING

Abstract: BSS138
Text: ± 20 V ID 0.22 A IDM 0.88 A PD 0.36 W TJ,TSTG -55 To 150 RJA , BVGSO VDS=0V, IG=±250uA ± 20 Gate Threshold Voltage VGS(th) VDS=VGS,ID=1mA 0.8 , CHARACTERISTICS (Note 4) VDD=30V,VGS=10V, RGEN=6ID=0.22A 9 nS 20 Turn­Off Fall Time tf 6 , =0.22A,VGS=10V 2.4 nC 0.1 0.4 DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3 , Voltage (V) Figure 11 Gate Charge ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode


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PDF BSS138 Rating1000V OT-23 OT-23 180mm 25unless bss138 MARKING BSS138
2012 - Not Available

Abstract: No abstract text available
Text: Standard Diode Features: •  •  •  •  •  •  •  •  For , or inductive load. For capacitive load, derate current by 20 %. Parameters Symbol S4G , www.element14.com www.farnell.com www.newark.com Page <1> 26/03/13 V1.0 Standard Diode Parameters , Page <2> 26/03/13 V1.0 Standard Diode www.element14.com www.farnell.com www.newark.com Page <3> 26/03/13 V1.0 Standard Diode Note: 1. Rise Time = 7ns Maximum Input Impedance =


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PDF RS-481 element14
2000 - power supply DVD schematic diagram

Abstract: orega flyback transformer wkp 1n m ICE2A265 ED29 diode dvd smps DVD power supply orega orega transformer high voltage SCHEMATIC DIAGRAM SMPS 12v 5A
Text: using the resistors R6 and diode D11. Because of the low current drain of <55 uA, high-value resistors , . Regulation The output voltage is controlled using a type TL431 IC2 reference diode . This device , . The maximum current through the optocoupler diode and the voltage reference is set by the resistors , 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Part C1 C2 C3, C4, C6, C7 C5


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PDF DN-EVALMF2ICE2A265-1 ICE2A265 DN-EVALMF2ICE2A265 power supply DVD schematic diagram orega flyback transformer wkp 1n m ICE2A265 ED29 diode dvd smps DVD power supply orega orega transformer high voltage SCHEMATIC DIAGRAM SMPS 12v 5A
Not Available

Abstract: No abstract text available
Text: 50mm ( 2.0 INCH) 5x7 DOT MATRIX DISPLAY Part Number: TBC20-12EGWA High Efficiency Red Green Features Description 2.0 inch matrix height. The High Efficiency Red source color devices are made , operation. Light Emitting Diode . High contrast and light output. The Green source color devices are made with Gallium Stackable horizontally. Phosphide Green Light Emitting Diode . Easy mounting , [2] Forward Voltage High Efficiency Red Green 2.0 2.2 2.5 2.5 V IF=20mA IR


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PDF TBC20-12EGWA incPR/02/2011 DSAA7449 APR/02/2011
2005 - KAF-5060PBESEEVGC

Abstract: No abstract text available
Text: RELIABLE AND RUGGED. Light Emitting Diode . WATER CLEAR LENS. The Hyper Orange source color devices are made with LOW POWER CONSUMPTION. DH InGaAlP on GaAs substrate Light Emitting Diode . ONE , PACKAGE. SiC Light Emitting Diode . CAN PRODUCE ANY COLOR IN VISIBLE SPECTRUM, Static electricity , 20 38 nm IF=20mA C Capacitance Blue Hyper Orange Green 110 25 45 pF VF=0V;f=1MHz VF Forward Voltage Blue Hyper Orange Green 3.7 2.0 3.5 4.3 2.5 4.5 V


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PDF KAF-5060PBESEEVGC DSAB5759 MAR/13/2005 KAF-5060PBESEEVGC
smd transistor A11b

Abstract: smd diode code 1B2 transistor book transistor ic equivalent book
Text: which the device is primarily designed. A. B. C. D. E. F. G. H. L. N. P. Q. R. S. T. U. X. Y. Z. Diode : signal, low power Diode : variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode : tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode : magnetic sensitive Transistor: power, high frequency Optocoupler , . thyristor) Transistor: power switching Diode : multiplier, e.g. varactor, step recovery Diode : rectifier


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PDF
Not Available

Abstract: No abstract text available
Text: (1.23V typ.). EXTERNAL BOOTSTRAP DIODE Connect a 10nF low ESR ceramic capacitor between the BOOT pin , recommended to add an external bootstrap diode between an external 5V and the BOOT pin for efficiency improvement when input voltage is lower than 5.5V or duty ratio is higher than 65%. The bootstrap diode can be , damage the part. OUTPUT RECTIFIER DIODE The output rectifier diode supplies the current to the inductor when the high side switch is off. To reduce losses due to the diode forward voltage and recovery


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PDF RS6512 400KHz RS6512
Not Available

Abstract: No abstract text available
Text: 50mm ( 2.0 INCH) 5x7 DOT MATRIX DISPLAY Part Number: TBA20-11EGWA High Efficiency Red Green Features Description 2.0 inch matrix height. The High Efficiency Red source color devices are made , operation. Light Emitting Diode . High contrast and light output. The Green source color devices are made with Gallium Stackable horizontally. Phosphide Green Light Emitting Diode . Easy mounting , [2] Forward Voltage High Efficiency Red Green 2.0 2.2 2.5 2.5 V IF=20mA IR


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PDF TBA20-11EGWA incPR/02/2011 DSAA5923 APR/02/2011
2005 - Not Available

Abstract: No abstract text available
Text: Output saturation voltage VCE(sus) VCE(SAT) Clamp diode leakage current IR VR = 45V - < 1.0 50 μA Clamp diode forward voltage VF IF = 750mA - 1.6 2.0 V IBB(ON , Limits Unit VBB 45 +1.0 +750 7.0 -0.3 ~ +7.0 1.5 - 20 ~ +85 -55 ~ +150 V A mA V V , 8 21 I 01 I 12 9 20 I 11 19 PHASE 1 PWM 2 PWM 1 θ1 PHASE 10 , REF A SOURCE DISABLE RC 20 RS 17 RC CC RT CT TRUTH TABLE PHASE OUTA


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PDF AM2170 AM2170 750mA. 500mA) HSOP28
2008 - igbt gate driver circuit schematic hcpl-3120

Abstract: AN2007-04 AP99007 A 3120 opto inverter IGBT driver hcpl3120 FP40R12KT3 FP40R12KT3 INFINEON IGBT inverter calculation inverter igbt circuit diagrams in bridge hcpl3120 DRIVER
Text: diode D2 is conducting output current. So negative DC link voltage is applied to the output, which is , tr tf 400 200 0 0 20 40 60 80 100 120 Rg [ohm] Figure 4 , 200 0 0 20 40 60 80 100 120 Rg [ohm] Figure 5 Switching times vs. Rg , 40 20 0 10 20 30 40 50 60 70 80 IC [A] Figure 6 The turn on delay , question an additional diode is connected to simulate the reduced Vth voltage. The diode has a voltage


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PDF AN2007-04 AP99007 com/dgdl/an-200601 db3a304412b407950112b408e8c9000 db3a304412b407950112b40ed1711291 igbt gate driver circuit schematic hcpl-3120 AN2007-04 AP99007 A 3120 opto inverter IGBT driver hcpl3120 FP40R12KT3 FP40R12KT3 INFINEON IGBT inverter calculation inverter igbt circuit diagrams in bridge hcpl3120 DRIVER
SOP-8

Abstract: SSF2627
Text: ) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS , IGSS VGS=±10V,VDS=0V ±100 nA ©Silikron Semiconductor CO.,LTD. 1 - 20 http , DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A -0.8 -1 V , Diode Forward 4 http://www.silikron.com v1.0 -ID- Drain Current (A) SSF2627 Vds


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PDF SSF2627 SSF2627 330rameters) SOP-8
ice3b0565g

Abstract: ERNI rel 37 ANIP9931E erni rel 07 zener diode sod80 erni rel 14 Phycom IC 78045 78045 CiPoS IKCS12F60AA
Text: , Farnell 20 1 D8 500mW, 43V Zener Diode SOD80 (Mini-Melf) PHILIPS, BZV55-C43 , . 20 References , Infineon Technologies K ­ DuoPack (IGBT and diode ) C ­ with control (SOI) S ­ SIL 12 ­ 12A INOM @ TC = , driver low side 1/U phase 19 /LIN2 input gate driver low side 2/V phase 20 /LIN3 input , description of parameters.) /HIN1,2,3 and /LIN1,2,3 (high side and low side control pins, input, Pin15~ 20


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PDF AN-EVAL-IKCS12F60AA-1 IKCS12F60AA IKCS12F60AA EVAL-IKCS12F60AA ice3b0565g ERNI rel 37 ANIP9931E erni rel 07 zener diode sod80 erni rel 14 Phycom IC 78045 78045 CiPoS IKCS12F60AA
2003 - AMM56219

Abstract: max plus v1.0 L6219DS 24 pwm dc motor drive Amtek Semiconductors SENSE23 RS Components stepper motor driver
Text: Symbol Limits Unit VBB 45 +1.0 +750 7.0 -0.3 ~ +7.0 1.5 55 - 20 ~ +85 -55 ~ +150 V , 21 OUT 1B OUT 2B 5 20 I 01 GROUND 6 19 GROUND GROUND 7 18 GROUND , Circuitry Channel 1 terminal numbers shown VBB 24 OUT B 21 1 OUT A 15 23 20 k ÷ 10 40 k I0 COMP IN 22 10 k 17 ONE SHOT SOURCE DISABLE RC 20 I1 SENSE + V , ) Clamp diode leakage current IR VR = 45V - < 1.0 50 A Clamp diode forward voltage


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PDF AMM56219 AMM56219 750mA. 500mA) max plus v1.0 L6219DS 24 pwm dc motor drive Amtek Semiconductors SENSE23 RS Components stepper motor driver
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