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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

DIODE US1J Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - DIODE US1J

Abstract:
Text: . UNIT Cd diode capacitance US1A to US1G US1J THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a , US1J f = 1MHz; Tj = 25 °C. Fig.8 Diode capacitance as a function of reverse voltage; typical , (IEC 134). SYMBOL VRRM US1A US1B US1D US1G US1J VR continuous reverse voltage US1A US1B US1D US1G US1J VRMS root mean square voltage US1A US1B US1D US1G US1J IF(AV) average forward current averaged over any , PARAMETER forward voltage US1A to US1G US1J IR reverse current IF = 1 A; see Fig.4 see Fig.5 VR = VRRMmax


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PDF DO-214AC DIODE US1J Diode marking us1j marking of US1J diode US1J us1jf
2000 - DIODE US1J

Abstract:
Text: ; Tj = 25 °C. Fig.9 10 VR (V) 102 US1J f = 1 MHz; Tj = 25 °C. Fig.8 1 Diode , 400 V US1J - 600 V US1A - 50 V US1B - 100 V US1D - 200 V US1G - 400 V US1J - 600 V US1A - 35 V US1B - 70 V , 420 V - 1 A continuous reverse voltage root mean square voltage US1J IF(AV , .4 - 1.1 V US1J see Fig.5 - 1.4 V reverse current VR = VRRMmax; see Figs 6


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PDF M3D168 DO-214AC 603502/250/01/pp12 DIODE US1J US1G diode
diode SMA marking code 14

Abstract:
Text: US1D - 200 V US1G - 400 V US1J - 600 V Vr continuous reverse voltage US1A - 50 V US1B - 100 V US1D - 200 V US1G - 400 V US1J - 600 V vrmS root mean square voltage US1A - 35 V US1B - 70 V US1D - 140 V US1G - 280 V US1J - 420 V if(AV) average forward current , PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage If = 1 A; USIAto US1G see Fig.4 - 1.1 V US1J , A; measured at Ir = 0.25 A; see Fig. 12 - 50 ns Cd diode capacitance VR = 4 V; f = 1 MHz


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PDF DO-214AC diode SMA marking code 14 DIODE US1J Diode marking us1j diode SMA marking 14 marking of US1J diode US1G diode
2008 - DIODE US1J

Abstract:
Text: ) Part Number Table Description Part Number Diode , Ultra-Fast, 1A, 50V US1A Diode , Ultra-Fast, 1A, 100V US1B Diode , Ultra-Fast, 1A, 200V US1D Diode , Ultra-Fast, 1A, 400V US1G Diode , Ultra-Fast, 1A, 600V US1J Diode , Ultra-Fast, 1A, 800V US1K Diode , Ultra-Fast, 1A , US1B US1D US1G US1J US1K US1M Maximum Recurrent Peak Reverse Voltage VRRM 50 , .1 US1x Series Ratings and Characteristic Curves (US1A, US1B, US1D, US1G, US1J , US1K, US1M) Maximum


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PDF 260oC/10 SMB/DO-214AC MIL-STD-750, DIODE US1J us1j diode diode 400v 0.5a US1G diode US1M 61 ULtra FAST diode
Not Available

Abstract:
Text: US1A, US1B, US1D, US1G, US1J , US1K, US1M www.vishay.com Vishay General Semiconductor Surface , DO-214AC (SMA) Diode variations Case: DO-214AC (SMA)ï€ Molding compound meets UL 94 V , 25 °C unless otherwise noted) PARAMETER SYMBOL US1A US1B US1D US1G US1J US1K , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 US1A, US1B, US1D, US1G, US1J , US1K, US1M www.vishay.com , US1D US1G US1J 1.0 US1K US1M 1.7 V 10 IR UNIT μA 50 Maximum


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PDF J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2014 - Not Available

Abstract:
Text: US1A, US1B, US1D, US1G, US1J , US1K, US1M www.vishay.com Vishay General Semiconductor Surface , DO-214AC (SMA) Diode variations Case: DO-214AC (SMA)ï€ Molding compound meets UL 94 V , SYMBOL Device marking code US1A US1B US1D US1G US1J US1K US1M UNIT UA UB , , US1G, US1J , US1K, US1M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS , blocking voltage SYMBOL TA = 100 °C US1D US1G US1J 1.0 US1K US1M 1.7 V 10


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PDF J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2015 - Not Available

Abstract:
Text: -214AC (SMA) Diode variations Case: DO-214AC (SMA)ï€ Molding compound meets UL 94 V-0 flammability , US1B US1D US1G US1J US1K US1M UNIT UA UB UD UG UJ UK UM , US1D US1G US1J US1K US1M UNIT 1.0 A VF (1) TA = 25 °C Maximum DC reverse currentï€ at , US1D US1G US1J US1K US1M UNIT RJA (1) 75 RJL (1) Maximum thermal resistance 27 , 25 °C US1J thru US1M 0.01 0.2 0 1 TJ = 150 °C 10 100 0.7 1.2 1.7 2.2


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PDF J-STD-020, DO-214AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2014 - general semiconductor diode marking ug

Abstract:
Text: Package DO-214AC (SMA) Diode variations Single die MECHANICAL DATA Case: DO-214AC (SMA)ï , RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL US1B US1D US1G US1J US1K , TA = 100 °C US1D US1G US1J 1.0 US1K US1M 1.7 V 10 IR UNIT μA , RJA Maximum thermal resistance US1J UNIT °C/W Note PCB mounted on 0.2" x 0.2" (5.0 mm x , TJ = 125 °C 10 TJ = 100 °C 1 US1J thru US1M 0.1 TJ = 25 °C 0.01 0.5 0.7


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PDF J-STD-020, DO-214AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 general semiconductor diode marking ug
2012 - Not Available

Abstract:
Text: ® US1A – US1M 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for , %. Characteristic Symbol Average Rectified Output Current US1G US1J US1K US1M Unit 50 100 , US1A – US1D 0.1 US1J – US1M 0.01 0 IFSM, PEAK FORWARD SURGE CURRENT (A) IF , CAPACITANCE (pF) 50 f = 1MHz 40 30 US1A – US1G 20 US1J – US1M 10 0 0.1


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PDF SMA/DO-214AC, MIL-STD-750,
2006 - DIODE US1J

Abstract:
Text: US1A ­ US1K WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low , otherwise specified Symbol Average Rectified Output Current US1G US1J US1K Unit 50 , 1.0 US1J - US1K 0.1 Tj - 25°C Pulse Width = 300µs 0.01 0 40 Single Half Sine-Wave


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PDF SMA/DO-214AC SMA/DO-214AC, MIL-STD-750, DIODE US1J US1K-T3
2006 - Not Available

Abstract:
Text: US1A – US1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss Ultra-Fast Recovery Time , US1J US1K US1M Unit 50 100 200 400 600 800 1000 V VR(RMS) RMS , US1G 1.0 US1J - US1M 0.1 Tj - 25°C Pulse Width = 300µs 0.01 0 40 Single Half


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PDF SMA/DO-214AC SMA/DO-214AC, MIL-STD-750,
2006 - us1m diode

Abstract:
Text: US1A ­ US1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss Ultra-Fast Recovery Time , Characteristics Characteristic G E @TA=25°C unless otherwise specified Symbol US1D US1G US1J , 0.5 0 25 50 75 100 125 150 10 US1A - US1D US1G 1.0 US1J - US1M 0.1


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PDF SMA/DO-214AC SMA/DO-214AC, MIL-STD-750, us1m diode do-214ac footprint marking of US1J diode US1K-T3
2002 - HC 5287

Abstract:
Text: US1J D7 US1J D6 US1J Monday, May 28, 2001 Document Number SPM C28 104 , Diode , (1N4937) Bootstrap Diode CBS 220µF, 35V Electrolytic Capacitor Bootstrap , Recovery Diode , (1N4937) Bootstrap Diode CBS 220µF, 35V Electrolytic Capacitor Bootstrap


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PDF KDS226 KRC101S 100KF KA5H0280R 474/AC275V PM3A104K U1DL-44A HC 5287 sck 104 thermistor 16T202DA1 pm3a104k RBS 3101 16t202da1e 103 2KV ZNR 471 HA 1156 wp 710 opto coupler
Not Available

Abstract:
Text: and storage temperature range SYMBOLS VRRM VRMS VDC US1A US1B US1D US1G US1J 50 35 50 , ,sec. 100 KD Diode


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PDF DO-214AC) DO-214AC
1998 - US1A-US1M

Abstract:
Text: TT=75°C Symbol Value Unit US1A US1B US1D US1G US1J US1K US1M Repetitive peak , Diode capacitance VR=4V, f=1MHz Thermal resistance junction to terminal on PC board with


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PDF D-74025 24-Jun-98 US1A-US1M us1m vishay US1G diode US1M Lite DIODE US1J us1j diode us1m diode
Not Available

Abstract:
Text: Type US1A US1B US1D US1G US1J US1K US1M Sym bol V rrm = v rwm =VR Value 50 100 200 400 600 800 , V V ^A ^A ns ns _pF_ PF K/W R everse current R everse recovery tim e Diode capacitance Therm al


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PDF D-74025 24-Jun-98
IRF32N50

Abstract:
Text: AC Motor Drive Table of Contents AC INPUT, Diode Bridges , INPUT, Diode Bridges Single Phase Product Name Status Description Features Package , TH / Radial PFC fast diode Product Name Status Description Features Package 15ETX06 UltraFast Diode 600V, 15A, 18 nsec Trr 30EPH06 UltraFast Diode 600V, 30A, 35 nsec Trr TH / Radial TO-247 (2 lead) 8ETX06 UltraFast Diode 600V, 8A, 16 nsec Trr TH


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PDF IRFP32N50K IRFPS40N60K O-247 GB15XP120KT HFA25PB60 IRF32N50 NTC 5R1 smd diode 600v 1a
2014 - Not Available

Abstract:
Text: ) → 2.2 µF where: VDD = 15 V; Bootstrap Diode = US1J ; Qg + QLS = Approximately 50 nC (designed , . 12 Selection of Bootstrap Diode . 12 Selection of Bootstrap , V/1 W Zener diode across the control supply to prevent surge destruction under severe conditions , t3 (2) (4) The added diode blocks the IC leakage current (approximately 500 nA) from the , filtering time (Typical 400 ns). For the short circuit state, the diode drop voltage must be considered


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PDF AN-9077
PAC1000

Abstract:
Text: rectified line input (+) bus to the DC bus capacitor CBUS through diode DPFC. The stored energy in LPFC is , switching The waveforms in figure 12 indicate that the secondary rectifier diode currents move from , M1 IPP60R250CP VDR1 C36 10nF 1K R14 D1 US1J -13 R4 15K R3 820K R2 820K , /500V US1J -13F D7 1 D17 2.7V 1uF 4 3 2 C17 R63 100K R57 100K R56 , D16 D4 US1J -13 R26 100K/1W 2 6 4 5 R59 2.2 M6 SPA03N60C3 3 1 T2


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PDF AN-1169 IRS2548D IRS2548DS IRS2500S AN-1160 PAC1000
CD1490C

Abstract:
Text: IRFR24N15DTRLP BF SPA03N60C3 MMBT2907 US1J -13 MOSFET, 650V, TO220 Transistor, PNP, 60V, SOT23 Diode , DC bus capacitor CBUS through diode DPFC and the stored energy in LPFC is transferred to CBUS. MPFC , 3 ISO-RTN C1 220nF X2 3n3 VBR+ BR1 DF10S L2 2 1 D1 US1J -13 5 6 7 1 , NLCV R25 33R VBR+ VCC_S US1J -13F + R55 100K C16 1nF/1kV R26 100K/1W C18 47uF , TDK NLCV D6 6 VCC_P D4 US1J -13 US1B-13F 2 C20 + 0.1uF/25V C21 47uF/50V R57


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PDF AN-1169 IRS2548D IRS2548DS IRS2500S AN-1160 CD1490C CD1491C lm358 555 pwm
ZNR 471

Abstract:
Text: C28 104 D5 C17 220u US1J D7 C16 220u US1J D6 C15 220u US1J Wednesday, June 06 , Diode , (1N4937) Bootstrap Diode CBS 220µF, 35V Electrolytic Capacitor Bootstrap , Recovery Diode , (1N4937) Bootstrap Diode CBS 220µF, 35V Electrolytic Capacitor Bootstrap , , 600V Fast Recovery Diode , (1N4937) Bootstrap Diode (Phase U) D2 1A, 600V Fast Recovery Diode , (1N4937) Bootstrap Diode (Phase V) D3 1A, 600V Fast Recovery Diode , (1N4937


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PDF KDS226 100KF KRC101S 2N2222 KA5H0280R 474/AC275V PM3A104K ZNR 471 103 2KV pm3a104k detailed vfd circuit diagram for motor three phase DA1 7805 710 opto coupler 16T202DA1 100uf 16v electrolytic capacitor KA78L05BP TLP521
2007 - Not Available

Abstract:
Text: Automotive Quasi-Resonant Flyback Control IC Functional Block Diagram D2 US1J C4 22 F VBAT 7 to 40V , C9 100 nF Filament 8V 200 mA D3 US1J Optional EMI Filter LS2 L1 C1 C2 D4 , as the filament supply, it is recommended that a Schottky diode be used. For the higher voltage , voltage, VRRM, and the maximum average current that the diode is subjected to. The VRRM rating should , — NS1 + VOUT NP . (14) The maximum average current through the diode is simply the maximum


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PDF A4401
2007 - Not Available

Abstract:
Text: Quasi-Resonant Flyback Control IC Functional Block Diagram D2 US1J LS1 C4 22 F D3 US1J C6 22 F D4 STPS160U LP , diode is simply the maximum load current. The diode should be rated to handle this current with some margin. In addition, the diode should be able to handle the power dissipation. The majority of the power , forward voltage drop, Vf , can be found from the diode characteristics at maximum load. C1 Input , diode be used. For the higher voltage rails, ultrafast rectifier diodes are recommended. For each output


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PDF A4401
2007 - Self-Oscillating Flyback mosfet

Abstract:
Text: Quasi-Resonant Flyback Control IC Functional Block Diagram D2 US1J LS1 C4 22 F D3 US1J C6 22 F D4 STPS160U LP , diode is simply the maximum load current. The diode should be rated to handle this current with some margin. In addition, the diode should be able to handle the power dissipation. The majority of the power , forward voltage drop, Vf , can be found from the diode characteristics at maximum load. C1 Input , diode be used. For the higher voltage rails, ultrafast rectifier diodes are recommended. For each output


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PDF A4401 Self-Oscillating Flyback mosfet snubber circuit for mosfet LLC
2007 - Self-Oscillating Flyback mosfet

Abstract:
Text: IC Functional Block Diagram D2 US1J LS1 VBAT 7 to 40V Optional EMI Filter C4 22 F , Filament 8V 200 mA D3 US1J LS2 L1 C5 100 nF C2 D4 STPS160U LP LS3 C3 100 nF , the filament supply, it is recommended that a Schottky diode be used. For the higher voltage rails , , and the maximum average current that the diode is subjected to. The VRRM rating should exceed at , NP . (14) The maximum average current through the diode is simply the maximum load current


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PDF A4401 Self-Oscillating Flyback mosfet A4401 STPS160U Self-Oscillating Flyback Self Oscillating Flyback Converters JESD51-5 IPC7351 Flyback Self-Oscillating AEC-Q100-002 three phase vfd circuit diagram
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