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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CUZ30V CUZ30V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC
CUZ20V CUZ20V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC
CEZ6V2 CEZ6V2 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC
CUZ6V8 CUZ6V8 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC
CUZ12V CUZ12V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC
MUZ5V6 MUZ5V6 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM

DIODE T25 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - Not Available

Abstract: No abstract text available
Text: ) Intensity (arb.) Typ. Spectrum of 976 nm Laser Diode ( T=25 °C) 961 nm 3 Germany & Other Countries , -98-tt-3W-16-F-f-c-l-D BLD-98-tt-7W-16-F-f-c-l-D BLD-98-tt-10W-16-F-f-c-l-D High Power Laser Diode Modules are , radiation from the laser diode chip into an output fiber with small core diameter by using special micro , . Avoid surge current. ▪▪ Laser diode must be used according to the specifications. ▪▪ Laser diode must work with good cooling. ▪▪ A minimum bend diameter should be 300 times greater than the


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PDF BLD-98-tt-3W-16-F-f-c-l-D BLD-98-tt-7W-16-F-f-c-l-D BLD-98-tt-10W-16-F-f-c-l-D
2008 - DIODE T25 4

Abstract: DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
Text: equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02R is a design which includes ESD rated diode , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , CHARACTERISTICS MIN TYP MAX UNITS PARAMETER SYMBOL CONDITIONS Reverse Stand-Off pin 5 to pin 2, T=25 oC 5 VRWM V Voltage Reverse Leakage VRWM = 5V, T=25 oC, pin 5 to pin 2 5 ILeak μA Current Channel


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PDF AZC299-02R 5/50ns) DIODE T25 4 DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
2009 - ULTVSJJ5VCESGP

Abstract: diode t25 4 A8 DIODE T25 4 diode T25-4
Text: ULTVSJJ5VCESGP is a design which includes surge rated diode arrays to protect high speed data interfaces , unique design of clamping cell which is an equivalent TVS diode in a single package. During transient , voltage  Array of surge rated diodes with internal equivalent TVS diode  Solid-state , SYMBOL CONDITIONS Reverse Stand-Off Pin 8 to pin 7, T=25 oC VRWM Voltage Reverse Leakage VRWM = 5V, T=25 oC, Pin 8 to pin 7 ILeak Current Channel Leakage ICH-Leak VPin 8 = 5V, VPin 7 = 0V, T=25 oC


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PDF 100ns ULTVSJJ5VCESGP diode t25 4 A8 DIODE T25 4 diode T25-4
2008 - Not Available

Abstract: No abstract text available
Text: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , rated diode arrays to protect high speed data interfaces. The AZ1045-02J has been specifically , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , CHARACTERISTICS PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Reverse Stand-Off o Pin 5 to pin 2, T=25 C 5 V VRWM Voltage Reverse Leakage VRWM = 5V, T=25 oC, Pin 5 to pin 2 5 μA ILeak Current


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PDF AZ1045-02J AZ1045-02J arrays300 150mm.
2010 - ULTVSQB5VCESGP

Abstract: No abstract text available
Text: ¬ Array of surge rated diodes with internal equivalent TVS diode  Solid-state silicon-avalanche and , is a design which includes ESD rated diode arrays to protect high speed data interfaces. The , clamping cell which is an equivalent TVS diode in a single package. During transient conditions, the , CONDITIONS Reverse Stand-Off Pin 2 to pin 9, T=25 oC. VRWM Voltage Reverse Leakage VRWM = 5V, T=25 oC, Pin 2 to pin 9. ILeak Current Channel Leakage ICH-Leak VPin 2 = 5V, VPin 9 = 0V, T=25 oC. Current


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PDF 800TYP. 031TYP. 600TYP 023TYP. 400TYP 015TYP. 200MIN. 008MIN ULTVSQB5VCESGP
2008 - Not Available

Abstract: No abstract text available
Text: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , design which includes ESD rated diode arrays to protect high speed data interfaces. The AZ1045-02J has , cell which is an equivalent TVS diode in a single package. During transient conditions, the steering , pin 2, T=25 C 5 V VRWM Voltage Reverse Leakage VRWM = 5V, T=25 oC, Pin 5 to pin 2 5 μA ILeak Current Channel Leakage VPin5 = 5V, VPin2 = 0V, T=25 oC 1 μA ICH-Leak Current Reverse Breakdown


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PDF AZ1045-02J AZ1045-02J
2008 - Not Available

Abstract: No abstract text available
Text: clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves , 1 AZ1115-02S is a high performance design which includes surge rated diode arrays to protect , which is an equivalent TVS diode in a single package. During transient conditions, the steering diodes , Pin 5 to pin 2, T=25 oC 5 V ILeak VRWM = 5V, T=25 oC, Pin 5 to pin 2 5 μA VPin 5 = 5V, VPin 2 = 0V, T=25 oC 1 μA 9 V 1 V ICH_Leak VBV VF Vclamp_io ESD


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PDF AZ1115-02S AZ1115-02S 5/50ns) silicon024 113XY
2007 - Not Available

Abstract: No abstract text available
Text: diodes with internal equivalent TVS diode Small package saves board space Solid-state , and low cost design which includes surge rated diode arrays to protect high speed data interfaces , diode in a single package. During transient conditions, the steering diodes direct the transient to , Clamping Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping , Rdynamic_VDD CIN CCROSS △CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4


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PDF AZC015-02N AZC015-02N 5/50ns) C03XY.
2009 - azc199

Abstract: AZC199-02S
Text: diode Solid-state silicon-avalanche and active circuit triggering technology Green part , rated diode arrays to protect high speed data interfaces. The AZC199-02S has been specifically , diode in a single package. During transient conditions, the steering diodes direct the transient to , IBV = 1mA, T=25 oC, Pin 1/2 to Pin 3 VF IF = 15mA, T=25 oC, Pin 3 to Pin1/2 MAX UNITS 1 7 0.85 μA 10 Vpin1 or pin2 = 5V, VPin3 = 0V, T=25 oC VBV MIN TYP V 1.1 V o


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PDF AZC199-02S 5/50ns) C11XY azc199 AZC199-02S
2008 - c09x

Abstract: AZC015-02N SOT143-4L DIODE T25 4
Text: diodes with internal equivalent TVS diode Small package saves board space Solid-state , and low cost design which includes surge rated diode arrays to protect high speed data interfaces , diode in a single package. During transient conditions, the steering diodes direct the transient to , Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping Voltage , CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 A


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PDF AZC015-02N AZC015-02N 5/50ns) 8/20s) techno09 C03XY. c09x SOT143-4L DIODE T25 4
2008 - Not Available

Abstract: No abstract text available
Text: equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02S is a design which includes ESD rated diode , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , 2, T=25 oC 5 VRWM V Voltage Reverse Leakage VRWM = 5V, T=25 oC, pin 5 to pin 2 5 ILeak μA Current Channel Leakage Vpin5 = 5V, Vpin2 = 0V, T=25 oC 1 ICH-Leak μA Current Reverse Breakdown


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PDF AZC299-02S 5/50ns) C29XY
2007 - tvs diode marking code fo

Abstract: SSEPAA5-02S data transmission through power lines DIODE MARKING CODE LAYOUT G SOT23 Firewire ESD marking code 10 sot23 tvs MARKING CODE LAYOUT SOT23
Text: with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and , performance design which includes surge rated diode arrays to protect high speed data interfaces. The , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , Pin 5 to pin 2, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 5 to pin 2 5 A Channel Leakage Current ICH_Leak VPin 5 = 5V, VPin 2 = 0V, T=25 oC 1 A


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PDF SSEPAA5-02S 5/50ns) 8/20s) tvs diode marking code fo SSEPAA5-02S data transmission through power lines DIODE MARKING CODE LAYOUT G SOT23 Firewire ESD marking code 10 sot23 tvs MARKING CODE LAYOUT SOT23
2007 - HIGH VOLTAGE DIODE 6kv

Abstract: sot143 TOP marking 16 tvs diode marking code fo Firewire ESD SSEPAA5-02N MARKING 02n SOT143-4L
Text: with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and , performance design which includes surge rated diode arrays to protect high speed data interfaces. The , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , MIN TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 A Channel


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PDF SSEPAA5-02N 5/50ns) 8/20s) HIGH VOLTAGE DIODE 6kv sot143 TOP marking 16 tvs diode marking code fo Firewire ESD SSEPAA5-02N MARKING 02n SOT143-4L
2008 - AZ1045-04SU

Abstract: AZC099-04S
Text: clamping voltage Array of ESD rated diodes with internal equivalent TVS diode Solid-state , version available Green part available AZ1045-04SU is a design which includes ESD rated diode arrays , capacitance steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a , UNITS A V kV kV o C C o C o V MAX UNITS VRWM Pin 5 to pin 2, T=25 oC 5 V ILeak VRWM = 5V, T=25 oC, Pin 5 to pin 2 5 μA VPin5 = 5V, VPin2 = 0V, T=25 oC 1


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PDF AZ1045-04SU 8/20us) AZ1045-04SU AZC099-04S
2008 - AZC099-04S

Abstract: AZ1045-04Q AZC099
Text: diode Simplified layout for HDMI connectors Solid-state silicon-avalanche and active circuit , available AZ1045-04QU is a design which includes surge rated diode arrays to protect high speed data , unique design of clamping cell which is an equivalent TVS diode in a single package. During transient , V MIN MAX UNITS TYP o kV kV o C C o C o V VRWM Pin 3 to pin 8, T=25 C 5 V ILeak VRWM = 5V, T=25 oC, Pin 3 to pin 8 5 μA VPin 3 = 5V, VPin 8 = 0V


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PDF AZ1045-04QU 1045QU AZC099-04S AZ1045-04Q AZC099
2008 - amazing

Abstract: DIODE T25 4 AZC002-02N 1394 6 pin firewire to USB Connection Diagram Diode Equivalent t25 4 6 pin Package 02n 1394 firewire to USB Connection Diagram 1394 firewire 6 pin to USB marking 5a sot143 sot143 usb tvs
Text: diodes with internal equivalent TVS diode Small package saves board space Solid-state , AZC002-02N is a high performance and low cost design which includes surge rated diode arrays to protect , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , MIN TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 2 A Channel


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PDF AZC002-02N AZC002-02N 5/50ns) 8/20s) C04XY C06XY amazing DIODE T25 4 1394 6 pin firewire to USB Connection Diagram Diode Equivalent t25 4 6 pin Package 02n 1394 firewire to USB Connection Diagram 1394 firewire 6 pin to USB marking 5a sot143 sot143 usb tvs
2007 - Not Available

Abstract: No abstract text available
Text: diodes with internal equivalent TVS diode Small package saves board space Solid-state , and low cost design which includes surge rated diode arrays to protect high speed data interfaces , diode in a single package. During transient conditions, the steering diodes direct the transient to , TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 2 μA Channel Leakage


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PDF AZC002-02N AZC002-02N 5/50ns) C04XY C04XY.
2008 - Not Available

Abstract: No abstract text available
Text: voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space , -02S is a high performance design which includes surge rated diode arrays to protect high speed data , diode in a single package. During transient conditions, the steering diodes direct the transient to , Pin 5 to pin 2, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 5 to pin 2 5 μA Channel Leakage Current ICH_Leak VPin 5 = 5V, VPin 2 = 0V, T=25 oC 1


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PDF AZ1015-02S 5/50ns) 101XY.
2008 - AZ1015-02N

Abstract: EQUIVALENT 02n
Text: voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space , -02N is a high performance design which includes surge rated diode arrays to protect high speed data , diode in a single package. During transient conditions, the steering diodes direct the transient to , Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 μA Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1


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PDF AZ1015-02N 5/50ns) 102XY. AZ1015-02N EQUIVALENT 02n
DIODE T25 4 H5

Abstract: diode t25 4 L0 T25 4 h5 DIODE T25 4 DIODE T25 DIODE T25 4 C diode t25 4 A0 V126 SEMITOP weight THYRISTOR tv 930
Text: 1200 SK 70 DH 12 1700 16C0 SK 70 DH 16 Symbol Conditions Values Units 'o T^-80 -C 63 A 'f SM 9 T^-25 "C; 10 ms 370 A T^ - 125 *C;10ms 280 A Pt T^-25 -C; 8.3 . 10 ms 686 A*$ T^- 125 -C; 8,3.10 ms 366 A*» VT T^-25 -C; 76A max 1,9 V VT(TO) V126 "ft 1 V t T^-126 -C 10 mil 'o:- 'rd V126'c , T^-25 -C; d.c. min. 2 V •or T^-25 -C; d.c. min. 100 mA voo T^ - 125 -C; d.c max. 0,26 V 'OD T^ - 125 -C; d.c max. 3 mA RthO-s) Per thyristor 1.2 KAV Per diode 1.7 KW Terrrinals, 10* 260 •c


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PDF
2007 - Not Available

Abstract: No abstract text available
Text: voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space , -02S is a high performance design which includes surge rated diode arrays to protect high speed data , diode in a single package. During transient conditions, the steering diodes direct the transient to , Pin 5 to pin 2, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 5 to pin 2 5 μA Channel Leakage Current ICH_Leak VPin 5 = 5V, VPin 2 = 0V, T=25 oC 1


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PDF AZ1015-02S 5/50ns) 101XY.
2007 - Not Available

Abstract: No abstract text available
Text: diodes with internal equivalent TVS diode Small package saves board space Solid-state , and low cost design which includes surge rated diode arrays to protect high speed data interfaces , diode in a single package. During transient conditions, the steering diodes direct the transient to , TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 2 μA Channel Leakage


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PDF AZC015-02N AZC015-02N 5/50ns) C03XY C03XY.
2008 - Not Available

Abstract: No abstract text available
Text: clamping voltage Array of ESD rated diodes with internal equivalent TVS diode Solid-state , version available AZ1045-04SU is a design which includes ESD rated diode arrays to protect high speed , diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , A V kV kV o C C o C o V MAX UNITS VRWM Pin 5 to pin 2, T=25 oC 5 V ILeak VRWM = 5V, T=25 oC, Pin 5 to pin 2 5 μA VPin5 = 5V, VPin2 = 0V, T=25 oC 1 μA


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PDF AZ1045-04SU 8/20us)
2008 - Not Available

Abstract: No abstract text available
Text: clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves , AZ1013-04S is a high performance design which includes surge rated diode arrays to protect high speed , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , MIN TYP MAX UNITS 3.3 V Reverse Stand-Off Voltage VRWM Pin 5 to pin 2, T=25 oC Reverse Leakage Current ILeak VRWM = 3.3V, T=25 oC, Pin 5 to pin 2 5 μA VPin 5


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PDF AZ1013-04S AZ1013-04S 5/50ns) 106XY
2007 - AZ1045-04Q

Abstract: No abstract text available
Text: diode Simplified layout for HDMI connectors Solid-state silicon-avalanche and active circuit , PCs AZ1045-04Q is a design which includes surge rated diode arrays to protect high speed data , unique design of clamping cell which is an equivalent TVS diode in a single package. During transient , C C o C o V VRWM Pin 8 to pin 3, T=25 C 5 V ILeak VRWM = 5V, T=25 oC, Pin 8 to pin 3 5 μA VPin 8 = 5V, VPin 3 = 0V, T=25 oC 1 μA 9 V 1 V ICH-Leak


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PDF AZ1045-04Q 1045Q AZ1045-04Q
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